An adaptive threshold gate using a tunnel diode memory.
Five input adaptive threshold logic gate using tunnel diode analog memory
Bargainer, J. D., Jr.↗
SEARCH · Engineering Papers
Results for “out of memory”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Memory behavior of an MNS capacitor.
Metal-/Si nitride/-Si/MNS/ capacitor memory behavior due to high voltage pulses, discussing charge transfer, stored charge location and tunneling conduction
Oconnell, M.↗
Limited memory optimal filtering.
Limited memory optimal filter theory, output and standard filter divergence due to errors
Jazwinski, A. H.↗
On the stability of certain motions of incompressible materials with memory.
Stability of motions of incompressible materials with memory and relation to thermodynamic principles
Coleman, B. D.↗
Design and develop a high density memory system Final report
High density memory planes based on closed flux structure using copper conductor sandwiched between Permalloy layers
Lienhard, H.↗
Investigation of coincident radio-frequency drive for nondestructive readout in thin-film memories Final report
Coincident radio frequency drive for nondestructive readout in thin film memories
Nicol, W. S.↗
Design and development of a multi-layer memory system Final report, 28 Jan. 1966 - 27 Jan. 1967
Design and development of multilayer memory system
Carithers, M. D.↗
An investigation of the basic properties of irradiated polyethylene memory materials
Properties of irradiated polyethylene memory materials
Greer, D.↗
Read-only Memories Final Report
Integrated, metal oxide semiconductor memories with nonvolatile and electrically programmable characteristics
Cricchi, J. R.↗
MOS field-effect transistor drivers for laminated-ferrite memories.
MOSFET drivers for low current memory fabricated in 64 unit monolithic strips, discussing driver performance data
Boesenberg, W. A.↗
Threshold switching delayed response in ferrite memory cores.
Delayed response in threshold switching from reset state in ferrite memory cores consisting of magnesium compounds
Barker, R. C.↗
Reliable information storage in memories designed from unreliable components.
Reliable information storage in memories designed from unreliable components
Taylor, M. G.↗
Limited memory optimal filtering.
Limited memory optimal filter theory, output and standard filter divergence due to errors
Jazwinski, A. H.↗
Charge storage model for variable threshold FET memory element.
FET memory element charge storage two layer model for thin film dielectrics noting charge/discharge times
Lewis, E. T.↗
Origin of threshold-response delay in ferrite memory cores.
Time logarithmic switching to explain anomalous delay in threshold response of MgMnZn ferrite memory cores
Barker, R. C.↗
An integrated nonvolatile read-write memory with addressing.
Integrated nonvolatile read-write memory with addressing using variable threshold field effect transistor including cell operation, channel shielding and circuit
Koig, M. B.↗
Investigations of the unique memory properties of 55-Nitinol alloy.
Mechanical properties associated with 55-Nitinol memory effect, presenting stress-strain and electrical resistivity as function of temperature
Bowker, D. E.↗
Memory reduction through higher level language hardware.
Computer memory reduction through Fortran higher level language, discussing tradeoff between costs saved and additional logic hardware
Gellman, L.↗