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At least 613 records · Page 34

Validating first-principles phonon lifetimes via inelastic neutron scattering

Phonon lifetimes are a key component of quasiparticle theories of transport; yet first-principles lifetimes are rarely directly compared with inelastic neutron scattering (INS) results. Existing comparisons show discrepancies even at temperatures where perturbation theory is expected to be reliable. In this paper, we demonstrate that the reciprocal space voxel (q voxel), which is the finite region in reciprocal space required in INS data analysis, must be explicitly accounted for within theory in order to draw a meaningful comparison. Here, we demonstrate accurate predictions of peak widths of the scattering function when accounting for the q voxel in CaF 2 and ThO 2 . Passing this test implies high fidelity of the phonon interactions and the approximations used to compute the Green's function, serving as a critical benchmark of theory and indicating that other material properties should be accurately predicted, which we demonstrate for thermal conductivity.

36 MATERIALS SCIENCE↗

Lifetime of double occupancies in the Fermi-Hubbard model

We investigate the decay of artificially created double occupancies in a repulsive Fermi-Hubbard system in the strongly interacting limit using diagrammatic many-body theory and experiments with ultracold fermions in optical lattices. The lifetime of the doublons is found to scale exponentially with the ratio of the on-site repulsion to the bandwidth. We show that the dominant decay process in presence of background holes is the excitation of a large number of particle-hole pairs to absorb the energy of the doublon. We also show that the strongly interacting nature of the background state is crucial in obtaining the correct estimate of the doublon lifetime in these systems. The theoretical estimates and the experimental data are in agreement.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Lifetime measurements in the transitional nucleus {sup 138}Gd

Lifetime measurements have been made in the ground-state band of the transitional nucleus {sup 138}Gd from coincidence recoil-distance Doppler-shift data. {sup 138}Gd nuclei were produced using the {sup 106}Cd ({sup 36}Ar, 2p2n) reaction with a beam energy of 190 MeV. Reduced transition probabilities have been extracted from the lifetime data collected with the Koeln plunger placed at the target position of the JUROGAM-II array. The B(E2) values have been compared with predictions from X(5) critical-point calculations, which describe the phase transition between vibrational and axially symmetric nuclear shapes, as well as with IBM-1 calculations at the critical point. While the excitation energies in {sup 138}Gd are consistent with X(5) predictions, the large uncertainties associated with the measured B(E2) values cannot preclude vibrational and rotational contributions to the low-lying structure of {sup 138}Gd. Although experimental knowledge for the low-lying {gamma} and {beta}-vibrational bands in {sup 138}Gd is limited, potential-energy surface calculations suggest an increase in {gamma} softness in the ground-state band. In order to more fully account for the effects of {gamma} softness, the X(5) and IBM-1 calculations need to be extended to include the {gamma} degree of freedom for {sup 138}Gd.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Precision lifetime measurements of the first 2{sup +} and 4{sup +} states in {sup 56}Cr at the N=32 subshell closure

Excited states in {sup 56}Cr have been populated after {sup 48}Ca({sup 11}B,p2n) reactions at a beam energy of 32 MeV. The Cologne plunger device surrounded by a {gamma}-detector array of one EUROBALL cluster detector and five Ge detectors was employed to determine lifetimes with the recoil distance Doppler shift method. {gamma}{gamma}-coincidence data were analyzed using the differential decay curve method and precise lifetimes for the first 2{sup +} and 4{sup +} state of {tau}=5.49(14) ps and {tau}=3.15(11) ps, respectively, were extracted. The corresponding B(E2; 2{sup +}{yields}0{sup +})=11.33(31) W.u. quantifies with a high accuracy the puzzling discrepancy between experimental B(E2) values in N=32 isotones and theoretical results from large-scale shell model calculations employing modern effective nucleon-nucleon interactions.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Measurements of H Λ 3 and H Λ 4 Lifetimes and Yields in Au + Au Collisions in the High Baryon Density Region

We report precision measurements of hypernuclei $^3_ΛH$ and $^4_ΛH$ lifetimes obtained from Au + Au collisions at $\sqrt{sNN}$ = 3.0 GeV and 7.2 GeV collected by the STAR experiment at the Relativistic Heavy Ion Collider, and the first measurement of $^3_ΛH$ and $^4_ΛH$ midrapidity yields in Au + Au collisions at $\sqrt{sNN}$ = 3.0 GeV. $^3_ΛH$ and $^4_ΛH$, being the two simplest bound states composed of hyperons and nucleons, are cornerstones in the field of hypernuclear physics. Their lifetimes are measured to be 221 ± 15 (stat) ± 19 (syst) ps for $^3_ΛH$ and 218 ± 6 (stat) ± 13 (syst) ps for $^4_ΛH$. The p T -integrated yields of $^3_ΛH$ and $^4_ΛH$ are presented in different centrality and rapidity intervals. It is observed that the shape of the rapidity distribution of $4_ΛH$ is different for 0%–10% and 10%–50% centrality collisions. Thermal model calculations, using the canonical ensemble for strangeness, describes the $^3_ΛH$ yield well, while underestimating the $^4_ΛH$ yield. Transport models, combining baryonic mean-field and coalescence (jam) or utilizing dynamical cluster formation via baryonic interactions (phqmd) for light nuclei and hypernuclei production, approximately describe the measured $^3_ΛH$ and $^4_ΛH$ yields. Our measurements provide means to precisely assess our understanding of the fundamental baryonic interactions with strange quarks, which can impact our understanding of more complicated systems involving hyperons, such as the interior of neutron stars or exotic hypernuclei.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Rainflow Algorithm-Based Lifetime Estimation of Power Semiconductors in Utility Applications

Rainflow algorithms are one of the popular counting methods used in fatigue and failure analysis in conjunction with semiconductor lifetime estimation models. However, the rain-flow algorithm used in power semiconductor reliability does not consider the time-dependent mean temperature calculation. The equivalent temperature calculation proposed by Nagode et al. is applied to semiconductor lifetime estimation in this paper. A month-long arc furnace load profile is used as a test profile to estimate temperatures in insulated-gate bipolar transistors (IGBTs) in a STATCOM for reactive compensation of load. In conclusion, the degradation in the life of the IGBT power device is predicted based on time-dependent temperature calculation.

36 MATERIALS SCIENCE↗

The Lifetime Estimate for ACSR Single-Stage Splice Connector Operating at Higher Temperatures

This paper is the continuation of Part I effort to develop a protocol of integrating analytical and experimental approaches to evaluate the integrity of a full tension single-stage splice connector (SSC) assembly during service at high operating temperature.1The Part II efforts are mainly focused on the thermal mechanical testing, thermal-cycling simulation and its impact on the effective lifetime of the SSC system. The investigation indicates that thermal cycling temperature and frequency, conductor cable tension loading, and the compressive residual stress field within a SSC system have significant impact on the SSC integrity and the associated effective lifetime.

43 PARTICLE ACCELERATORS↗

Light-sheet autofluorescence lifetime imaging with a single-photon avalanche diode array

Significance: Fluorescence lifetime imaging microscopy (FLIM) of the metabolic co-enzyme nicotinamide adenine dinucleotide (phosphate) [NAD(P)H] is a popular method to monitor single-cell metabolism within unperturbed, living 3D systems. However, FLIM of NAD(P)H has not been performed in a light-sheet geometry, which is advantageous for rapid imaging of cells within live 3D samples. Aim: We aim to design, validate, and demonstrate a proof-of-concept light-sheet system for NAD(P)H FLIM. Approach: A single-photon avalanche diode camera was integrated into a light sheet microscope to achieve optical sectioning and limit out-of-focus contributions for NAD(P)H FLIM of single cells. Results: An NAD(P)H light-sheet FLIM system was built and validated with fluores cence lifetime standards and with time-course imaging of metabolic perturbations in pancreas cancer cells with 10 s integration times. NAD(P)H light-sheet FLIM in vivo was demonstrated with live neutrophil imaging in a larval zebrafish tail wound also with 10 s integration times. Finally, the theoretical and practical imaging speeds for NAD(P)H FLIM were compared across laser scanning and light-sheet geometries, indicating a 30× to 6× acquisition speed advantage for the light sheet compared to the laser scanning geometry. Conclusions: FLIM of NAD(P)H is feasible in a light-sheet geometry and is attrac tive for 3D live cell imaging applications, such as monitoring immune cell metabolism and migration within an organism.

47 OTHER INSTRUMENTATION↗

Neutron lifetime measurement on setups with gravitational trap

Currently, the best accuracy of neutron lifetime measurements has been attained in the experiment with a gravitational trap for ultracold neutrons (UCNs), performed at the Petersburg Nuclear Physics Institute (PNPI); the measured lifetime was 878.5 ± 0.8 s. A new setup with a big gravitational trap has been designed to continue the methods and approaches used in the previous experiment. It is planned to reduce the measurement error to 0.2 s, i.e., improve the existing accuracy by a factor of 4. The spectrometer was designed at PNPI and installed on the PF2/MAM beam at the Institute Laue–Langevin. Test experiments have been performed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Measurement of surface recombination velocity and bulk lifetime in Si wafers by the kinetics of excess thermal emission

A contactless nondestructive technique for measuring recombination parameters (surface recombination velocity and bulk and effective lifetime of free carriers) in Si wafers is proposed. The technique is based on the analysis of the relaxation kinetics of excess thermal emission of a wafer beyond the Si intrinsic absorption edge ({lambda} > 3 {mu}m) after excitation by a short laser pulse with a photon energy higher than the Si band gap. Experimental results for wafers 300 {mu}m and 2 mm thick, excited by laser radiation with wavelengths of 0.96 and 1.06 {mu}m at above-room temperatures are presented. The surface and bulk components of the effective lifetime are separated by extrapolating the final portion of the kinetics of excess thermal emission relaxation to the intersection with the y coordinate axis.

36 MATERIALS SCIENCE↗

Experimental evaluation of the carrier lifetime in GaAs grown at low temperature

The relaxation dynamics of nonequilibrium charge carriers in gallium arsenide epitaxial films grown by molecular-beam epitaxy at low temperatures has been studied. The growth conditions of the epitaxial layer provided an excess arsenic content of 1.2% in the layer. In a material of this kind, the carrier lifetime is <1 ps. To examine carrier relaxation in the femtosecond range, an original scheme for measuring the refractive index dynamics was developed on the basis of the pump-probe technique. The lifetime of nonequilibrium charge carriers was evaluated to be (200 {+-} 35) fs.

36 MATERIALS SCIENCE↗

Temperature dependence of the carrier lifetime in Cd{sub x}Hg{sub 1−x}Te narrow-gap solid solutions with consideration for Auger processes

The temperature dependence of the carrier lifetime in Cd{sub x}Hg{sub 1−x}Te narrow-gap solid solutions in the temperature range 5 K < T < 300 K is analyzed within the scope of a microscopic model. Main attention is given to an analysis of the Auger recombination mechanism governing the carrier lifetime at high temperatures. The Auger-recombination rates are calculated with consideration for specific features of the band structure of the narrow-gap semiconductor in microscopic theory. It is shown that strict account of the non-parabolicity of the electronic structure in terms of Kane’s model leads to a substantially different temperature dependence of the Auger-recombination rates, compared with the approach in which nonparabolicity is disregarded.

36 MATERIALS SCIENCE↗

Anomalously long lifetime of holes in silicon with nanoclusters of manganese atoms

It is shown that it is possible to considerably increase the lifetime of holes (τ ≈ 10{sup 3} s) in silicon with multicharged nanoclusters of manganese atoms. It is established that the long lifetime of holes (τ ≈ 10{sup 0}–10{sup 3} s) is practically retained right up to T = 250 K. Such materials can be used in the development of more effective photoelements and photodetectors of infrared (IR) radiation.

36 MATERIALS SCIENCE↗

Analytic 1D pn junction diode photocurrent solutions following ionizing radiation and including time-dependent changes in the carrier lifetime.

Circuit simulation tools (e.g., SPICE) have become invaluable in the development and design of electronic circuits in radiation environments. These codes are often employed to study the effect of many thousands of devices under transient current conditions. Device-scale simulation tools (e.g., MEDICI) are commonly used in the design of individual semiconductor components, but require computing resources that make their incorporation into a circuit code impossible for large-scale circuits. Analytic solutions to the ambipolar diffusion equation, an approximation to the carrier transport equations, may be used to characterize the transient currents at nodes within a circuit simulator. We present new transient 1D excess carrier density and photocurrent density solutions to the ambipolar diffusion equation for low-level radiation pulses that take into account a finite device geometry, ohmic fields outside the depleted region, and an arbitrary change in the carrier lifetime due to neutron irradiation or other effects. The solutions are specifically evaluated for the case of an abrupt change in the carrier lifetime during or after, a step, square, or piecewise linear radiation pulse. Noting slow convergence of the raw Fourier series for certain parameter sets, we use closed-form formulas for some of the infinite sums to produce 'partial closed-form' solutions for the above three cases. These 'partial closed-form' solutions converge with only a few tens of terms, which enables efficient large-scale circuit simulations.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Predictive Battery Lifetime Modeling at NREL [Slides]

Battery lifetime models are used to extrapolate data from accelerated aging tests to simulate degradation in real-world applications such as electric vehicles and battery energy storage systems. Methods developed at NREL utilize both expert domain-knowledge and machine-learning to identify models, using statistical methods such as cross-validation and bootstrap resampling to interrogate model performance and quantify uncertainty. These models can be utilized in systems level simulations to predict battery performance or technoeconomic models to estimate the lifetime cost of battery systems.

25 ENERGY STORAGE↗

PV Lifetime Project (2021 NREL Annual Report)

DOE's PV Lifetime project was initiated in 2016 with the goal of accurately characterizing the early-life evolution of photovoltaic (PV) field performance. Different PV cell and module technologies result in different initial performance loss rates due to effects like light-induced degradation (LID) and light & elevated temperature-induced degradation (LeTID). To accurately characterize the initial field performance loss requires the use of high-accuracy indoor IV curve measurements at standard test conditions. Therefore, PV modules involved in this study are removed from the field once or twice per year and brought indoors for measurement. Current samples deployed and monitored in this way include Jinko Solar (2016), Trina Solar (2016), Hanwha Q-Cells (2017), Panasonic (2018), LG (2018), Canadian Solar (2018), Mission Solar (2019). More recently, modules from Sunpreme (2019), and LONGi (2020) have been deployed but not yet analyzed. Overall annual performance loss rates are as follows: our first modules to be deployed (Jinko and Trina) have annual median performance loss rate between -0.4%/yr and -0.9%/yr, mainly concentrated in the first year. The QCells mono-PERC and multi-PERC modules have an annual degradation rate of -0.76%/yr and -0.69%/yr respectively, also concentrated in the first year of operation. Panasonic and LG modules displayed negligible performance loss in the past two years, at 0.1%/yr and -0.0%/yr respectively. They also were the only modules with initial IV curve measurements consistently above the nameplate rating. Possibly relatedly, these are also the only two N-type silicon module types analyzed so far. Canadian Solar multi-PERC modules demonstrated a -1.3%/yr degradation rate which actually accelerated in the past year, so this will be a module type to monitor in future years. Mission Solar modules exhibited strong recoverable performance loss, consistent with LeTID susceptibility. (The same is true for the Jinko JKM260 module type). Annual performance loss actually showed improvement in time at +0.3%/yr after 2 years in the field, although the module initially was measured at 3% below nameplate rating. These modules could therefore be experiencing a form of post-LeTID recovery. Initial measurements have been conducted on the next two module types - Sunpreme n-HIT and LONGi bifacial mono-PERC. We will report on initial year-1 performance change for these modules in the next PV Lifetime annual report. For the remaining modules, an additional year of field exposure will provide greater certainty in annual degradation rates, particularly for those with degradation concentrated in the initial year of field deployment.

14 SOLAR ENERGY↗

Towards 50 Year Lifetime PV Modules: Double Glass vs. Glass/Backsheet

This award aims to increase the lifetime of c-Si modules by lowering the power degradation rate to the goal of 0.2 %/year, while also increasing the harvested irradiance per module using bifacial cells to achieve the 2030 SunShot goal of $0.03/kWh. Increasing the durability and lifetime of modules requires improved module packaging material choices and module architectures to exploit new cell improvements. Bifacial PERC cells (with backside aluminum fingers) are becoming a primary PV technology due to their decreased rear surface recombination and increased light absorption compared to traditional monofacial Al-BSF cells. Bifacial modules with double glass architectures have been deployed to capture the rear-side irradiance thereby increasing the light captured. The choice of a double glass (DG) or glass/backsheet (GB) module leads to two very different chemical (e.g., O 2 , H 2 O) and mechanical environments (e.g., mechanical stress levels) inside the PV module that impact the cell’s operational conditions. The recipient will fabricate 4-cell DG and GB minimodules with various module architectures or constructions (mono- & bifacial cells, transparent & white encapsulants), and conduct stepwise accelerated exposures and characterization.

14 SOLAR ENERGY↗