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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 613 records · Page 34
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Laterally configured resistive switching device based on transition-metal nano-gap electrode on Gd oxide

We have developed a fabrication process for a laterally configured resistive switching device based on a Gd oxide. A nano-gap electrode connected by a Gd oxide with the ideal interfaces has been created by adapting the electro-migration method in a metal/GdO{sub x} bilayer system. Bipolar set and reset operations have been clearly observed in the Pt/GdO{sub x} system similarly in the vertical device based on GdO{sub x}. Interestingly, we were able to observe a clear bipolar switching also in a ferromagnetic CoFeB nano-gap electrode with better stability compared to the Pt/GdO{sub x} device. The superior performance of the CoFeB/GdO{sub x} device implies the importance of the spin on the resistive switching.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Electrical spin injection and detection of spin precession in room temperature bulk GaN lateral spin valves

We report the measurement of diffusive electronic spin transport characteristics in an epitaxial wurtzite GaN lateral spin valve at room temperature. Hanle spin precession and non-local spin accumulation measurements have been performed with the spin valves fabricated with FeCo/MgO spin contacts. Electron spin relaxation length and spin-flip lifetime of 176 nm and 37 ps, respectively, are derived from analysis of results obtained from four-terminal Hanle spin precession measurements at 300 K. The role of dislocations and defects in bulk GaN has also been examined in the context of electronic spin relaxation dynamics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Temperature dependence of magneto-transport properties in Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5})/Cu lateral spin valves

The non-local spin signals of Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5})/Cu lateral spin valves with sub-micron size dimensions were measured with varying temperatures. The non-local spin signal reaches 54 mΩ at 4 K, while it degrades down to 13 mΩ at room temperature. Analysis based on the one-dimensional spin diffusion model clarifies the dominant source for degrading of the spin signal is suppression of the spin diffusion length in Cu, not the spin polarization, indicating Co{sub 2}Fe(Ga{sub 0.5}Ge{sub 0.5}) keeps half-metallic nature even at room temperature. The temperature dependence of non-local spin signal was found to exhibit a downturn at 36 K. The presence of magnetic impurities, detrimental effect of which becomes more pronounced for diffusive transport in long Cu wires, is suggested to cause the observed downturn in non-local spin signals.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Lateral gas phase diffusion length of boron atoms over Si/B surfaces during CVD of pure boron layers

The lateral gas phase diffusion length of boron atoms, L{sub B}, along silicon and boron surfaces during chemical vapor deposition (CVD) using diborane (B{sub 2}H{sub 6}) is reported. The value of L{sub B} is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the boron deposition temperature range from 700 °C down to 400 °C. For this temperature range the local loading effect of the boron deposition is investigated on the micro scale. A L{sub B} = 2.2 mm was determined for boron deposition at 700 °C, while a L{sub B} of less than 1 mm was observed at temperatures lower than 500 °C.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Structural and optical characterization of NaGdF{sub 4}: Ho{sup 3+}/Yb{sup 3+} UC nano-particles for lateral finger mark detections

Ho{sup 3+}/Yb{sup 3+} co-doped NaGdF{sub 4} up-conversion (UC) nano-particles were synthesized by thermal decomposition method. X-ray diffraction and FE-SEM image analysis were done to confirm the structure, morphology and determination of particle size. The UC emission spectra for as prepared as well as 100°C, 200°C, 300°C, 400°C, 800°C, 1000°C and 1200°C heated for 3h samples were recorded and there emission intensities were compared at a constant pump power of excitations 98.1 W/cm{sup 2}. The effect of emission intensity on decay time was also studied through focused and unfocused excitations. The synthesized material was successfully utilized in lateral finger mark detections on the glass substrate through powder dusting method.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Intensity-dependent nonlinearity of the lateral photoconductivity in InGaAs/GaAs dot-chain structures

Photoelectric properties of laterally correlated multilayer InGaAs/GaAs quantum dots (QDs) heterostructures are studied. The response of the photocurrent to increasing excitation intensity is found to be nonlinear and varying with excitation energy. The structures are photosensitive in a wide range of photon energies above 0.6 eV. The spectral dependence of the photoconductivity (PC) is caused by strong interaction between the bulk GaAs and the lower energy states of the wetting layer, the QDs, as well as the defect states in the GaAs band gap. In particular, a mechanism for the participation of deep electron trap levels in the photocurrent is clarified. These structures also demonstrate a high sensitivity of up to 10 A/W at low excitation intensities. However, at higher excitation intensities, the sensitivity reduces exhibiting a strong spectral dependence at the same time. The observed sublinear PC dependence on excitation power results from a direct electron-hole recombination both in the QDs and in GaAs host. The solution of rate equations included the contributions of QD ground and exited states, bulk GaAs states and the states of defects within the GaAs bandgap describes well the experimental data.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Three-dimensional concentration of light in deeply sub-wavelength, laterally tapered gap-plasmon nanocavities

Gap-plasmons (GP) in metal-insulator-metal (MIM) structures have shown exceptional performance in guiding and concentrating light within deep subwavelength layers. Reported designs to date exploit tapered thicknesses of the insulating layer in order to confine and focus the GP mode. Here, we propose a mechanism for the three dimensional concentration of light in planar MIM structures which exploits exclusively the lateral tapering of the front metallic layer while keeping a constant thickness of the insulating layer. We demonstrate that an array of tapered planar GP nanocavities can efficiently concentrate light in all three dimensions. A semi-analytical, one-dimensional model provides understanding of the underlying physics and approximately predicts the behavior of the structure. Three-dimensional simulations are then used to precisely calculate the optical behavior. Cavities with effective volumes as small as 10{sup −5} λ{sup 3} are achieved in an ultrathin MIM configuration. Our design is inherently capable of efficiently coupling with free-space radiation. In addition, being composed of two electrically continuous layers separated by an ultrathin dielectric spacer, it could find interesting applications in the area of active metamaterials or plasmonic photocatalysis where both electrical access and light concentration are required.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Lateral excitonic switching in vertically stacked quantum dots

We show that the application of a vertical electric field to the Coulomb interacting system in stacked quantum dots leads to a 90° in-plane switching of charge probability distribution in contrast to a single dot, where no such switching exists. Results are obtained using path integral quantum Monte Carlo with realistic dot geometry, alloy composition, and piezo-electric potential profiles. The origin of the switching lies in the strain interactions between the stacked dots hence the need for more than one layer of dots. The lateral polarization and electric field dependence of the radiative lifetimes of the excitonic switch are also discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Two dimensional WS{sub 2} lateral heterojunctions by strain modulation

“Strain engineering” has been widely used to tailor the physical properties of layered materials, like graphene, black phosphorus, and transition-metal dichalcogenides. Here, we exploit thermal strain engineering to construct two dimensional (2D) WS{sub 2} in-plane heterojunctions. Kelvin probe force microscopy is used to investigate the surface potentials and work functions of few-layer WS{sub 2} flakes, which are grown on SiO{sub 2}/Si substrates by chemical vapor deposition, followed by a fast cooling process. In the interior regions of strained WS{sub 2} flakes, work functions are found to be much larger than that of the unstrained regions. The difference in work functions, together with the variation of band gaps, endows the formation of heterojunctions in the boundaries between inner and outer domains of WS{sub 2} flakes. This result reveals that the existence of strain offers a unique opportunity to modulate the electronic properties of 2D materials and construct 2D lateral heterojunctions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Fabrication and structural properties of AlN submicron periodic lateral polar structures and waveguides for UV-C applications

Periodically poled AlN thin films with submicron domain widths were fabricated for nonlinear applications in the UV-VIS region. A procedure utilizing metalorganic chemical vapor deposition growth of AlN in combination with laser interference lithography was developed for making a nanoscale lateral polarity structure (LPS) with domain size down to 600 nm. The Al-polar and N-polar domains were identified by wet etching the periodic LPS in a potassium hydroxide solution and subsequent scanning electron microscopy (SEM) characterization. Fully coalesced and well-defined vertical interfaces between the adjacent domains were established by cross-sectional SEM. AlN LPSs were mechanically polished and surface roughness with a root mean square value of ∼10 nm over a 90 μm × 90 μm area was achieved. 3.8 μm wide and 650 nm thick AlN LPS waveguides were fabricated. The achieved domain sizes, surface roughness, and waveguides are suitable for second harmonic generation in the UVC spectrum.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Superluminescent light emitting diodes on naturally survived InGaN/GaN lateral nanowires

We demonstrate a method for nanowire formation by natural selection during wet anisotropic chemical etching in boiling phosphoric acid. Nanowires of sub-10 nm lateral dimensions and lengths of 700 nm or more are naturally formed during the wet etching due to the convergence of the nearby crystallographic hexagonal etch pits. These nanowires are site controlled when formed in augmentation with dry etching. Temperature and power dependent photoluminescence characterizations confirm excitonic transitions up to room temperature. The exciton confinement is enhanced by using two-dimensional confinement whereby enforcing greater overlap of the electron-hole wave-functions. The surviving nanowires have less defects and a small temperature variation of the output electroluminescent light. We have observed superluminescent behaviour of the light emitting diodes formed on these nanowires. There is no observable efficiency roll off for current densities up to 400 A/cm{sup 2}.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Robust optical properties of sandwiched lateral composition modulation GaInP structure grown by molecular beam epitaxy

Double-hetero structure lateral composition modulated (LCM) GaInP and sandwiched LCM GaInP having the same active layer thickness were grown and their optical properties were compared. Sandwiched LCM GaInP showed robust optical properties due to periodic potential nature of the LCM structure, and the periodicity was undistorted even for thickness far beyond the critical layer thickness. A thick LCM GaInP structure with undistorted potential that could preserve the properties of native LCM structure was possible by stacking thin LCM GaInP structures interspaced with strain compensating GaInP layers. Furthermore, the sandwiched structure could be beneficial in realizing the LCM structure embedded high efficiency solar cells.

14 SOLAR ENERGY↗
DOE OSTI2019

Lateral charge carrier transport properties of B-10 enriched hexagonal BN thick epilayers

Neutron detectors based on B-10 enriched hexagonal boron nitride (h- 10 BN or h-BN) epilayers have demonstrated the highest thermal neutron detection efficiency among solid-state neutron detectors at about 58%. However, many fundamental transport parameters of h-BN, including the room temperature carrier mobility, minority carrier lifetime, and surface recombination velocity, which are essential to the performance of detectors, are still unknown. Here, we report here the carrier drift mobilities ( μ ) and lifetimes (τ) of both electrons and holes in h- 10 BN epilayers measured by using a time-of-flight (TOF) technique. Lateral photoconductive type detectors fabricated from a 65 μm thick freestanding h- 10 BN epilayer were utilized to carry out the TOF measurements, which revealed μ e ~34 cm 2 /V s for electrons and μ h ~36 cm 2 /V s for holes and carrier lifetimes on the order of tens of microseconds. By combining the values of μ measured from TOF with S /μ (the ratio of the surface recombination velocity to mobility) deduced directly from the bias voltage dependence of photocurrent, S for both electrons ( S e ~1.4 × 10 4 cm/s) and holes ( S h ~2.7 × 10 3 cm/s) in h- 10 BN has been extracted. The determination of these important fundamental parameters (μ, τ, and S ) not only provides a better understanding of the carrier dynamics and electrical transport properties of h-BN but is also valuable for further advancing the development of h-BN materials and devices.

15 GEOTHERMAL ENERGY↗
DOE OSTI2021

A perspective on the electro-thermal co-design of ultra-wide bandgap lateral devices

Fundamental research and development of ultra-wide bandgap (UWBG) semiconductor devices are under way to realize next-generation power conversion and wireless communication systems. Devices based on aluminum gallium nitride (AlxGa1-xN, x is the Al composition), ..beta..-phase gallium oxide (..beta..-Ga2O3), and diamond give promise to the development of power switching devices and radio frequency power amplifiers with higher performance and efficiency than commercial wide bandgap semiconductor devices based on gallium nitride (GaN) and silicon carbide (SiC). However, one of the most critical challenges for the successful deployment of UWBG device technologies is to overcome adverse thermal effects that impact the device performance and reliability. Overheating of UWBG devices originates from the projected high power density operation and poor intrinsic thermal properties of AlxGa1-xN and ..beta..-Ga2O3. This Perspective delineates the need and process for the "electro-thermal co-design" of laterally configured UWBG electronic devices and provides a comprehensive review of current state-of-the-art thermal characterization methods, device thermal modeling practices, and both device- and package-level thermal management solutions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Morphology of shocked lateral outflows in colliding hydrodynamic flows

Supersonic interacting flows occurring in phenomena, such as protostellar jets, give rise to strong shocks and have been demonstrated in several laboratory experiments. To study such colliding flows, we use the AstroBEAR AMR code to conduct hydrodynamic simulations in three dimensions. Here, we introduce variations in the flow parameters of density, velocity, and cross-sectional radius of the colliding flows in order to study the propagation and conical shape of the bow shock formed by collisions between two, not necessarily symmetric, hypersonic flows. We find that the motion of the interaction region is driven by imbalances in ram pressure between the two flows, while the conical structure of the bow shock is a result of shocked lateral outflows being deflected from the horizontal when the flows are of differing cross sections.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Field-dependent carrier transport in implanted isolation region of GaN lateral power devices

Among GaN lateral power devices, with proper E-field management, the breakdown occurs in the device isolation region rather than the active region. In this paper, we investigate field-dependent carrier transport in the isolation structures. Isolation test structures with variations in buffer doping, un-intentionally doped (UID) GaN thickness, and implantation conditions were fabricated. Electrical characterization was performed over a wide range of voltage and temperature. With varying UID GaN thickness and buffer doping, the leakage current and breakdown characteristics remain the same for a specific implantation condition, indicating that the leakage conduction and breakdown are governed by the implanted GaN region. Analysis of the temperature-dependent I–V reveals that carrier transport in the implanted GaN can be well explained by hopping conduction, involving three distinctive regions of operation depending on the E-field. At low E-field, carrier transport is ohmic, consistent with variable range hopping, driven by thermal activation. At medium E-field, a field enhanced thermally activated hopping is observed, following σ ∼ σ(T)exp(E). At high E-field, activation-less hopping is visible, following σ ∼ exp(−1/E), which occurs above a critical E-field limited by localization length.

Sadek, Mansura (ORCID:0000000322588338)↗
DOE OSTI2025

Record performance in intrinsic, impurity-free lateral diamond photoconductive semiconductor switches

Photoconductive semiconductor switches (PCSSs) are fabricated on type IIa diamond substrates with varying boron and nitrogen impurity levels (<10 14 –10 16 cm –3 ). The photoresponse of lateral PCSS is reported over the incident laser wavelength range (212–240 nm), energy per pulse (5–65 μJ), and DC bias (–1.2 to +1.2 kV). The PCSS device with the lowest boron and nitrogen impurity concentration achieves the highest normalized responsivity of 9.1 × 10 –8 A-cm/W-V, peak photocurrent of 8.0 A, and on/off ratio of 2.3 × 10 11 at a DC bias of +1.2 kV with the potential for even higher currents at increased DC bias. All PCSS display fast rise times (<3 ns), limited by the laser's rise time. However, photoresponse measurements reveal that higher impurity levels reduce the photocurrent and decrease the on/off ratio. Furthermore, these results highlight the performance advantages of using low background concentration type IIa diamond substrates for PCSS fabrication and present a promising route toward advanced high-power, high-speed diamond-based switches.

42 ENGINEERING↗
DOE OSTI2025

Impact of threading dislocations on the V-defect assisted lateral carrier injection and recombination in InGaN quantum well LEDs

The nonuniform hole distribution between InGaN quantum wells (QWs) of light emitting diodes (LEDs) has a negative impact on LED efficiency. The uniformity can be increased by using lateral hole injection through sidewalls of V-defects, which form at threading dislocations. However, the inherent coupling between the V-defects and dislocations might affect efficiency of the hole injection and nonradiative recombination. In this work, we have tested the possible impact of the dislocations on the injection and recombination by means of scanning near-field electroluminescence and photoluminescence spectroscopy on single green-emitting InGaN QW LEDs containing large (∼0.5 μm) V-defects. The measurements have not provided any evidence of a lower hole injection efficiency or enhanced nonradiative recombination at the dislocations located at the V-defect facets or their apexes. This shows that large V-defects are excellent volumetric injectors for long wavelength InGaN LEDs. Furthermore, it was established that V-defects are preferential hole injectors even in single quantum well devices. Compared to vertical injection, the V-defect injection allows lowering the operating voltage, which should contribute to an enhanced wall plug efficiency.

42 ENGINEERING↗