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At least 613 records · Page 34
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Effect of reabsorbed recombination radiation on the saturation current of direct gap p-n junctions

The application of the radiative transfer theory for semiconductors to p-n homojunctions subject to low level injection conditions is discussed. By virtue of the interaction of the radiation field with free carriers across the depletion layer, the saturation current density in Shockley's expression for the diode current is reduced at high doping levels. The reduction, due to self-induced photon generation, is noticeable for n-type material owing to the small electron effective mass in direct band-gap III-V compounds. The effect is insignificant in p-type material. At an equilibrium electron concentration of 2 x 10 to the 18th/cu cm in GaAs, a reduction of the saturation current density by 15 percent is predicted. It is concluded that realistic GaAs p-n junctions possess a finite thickness.

Von Roos, O.↗
NASA NTRS1984

Fabrication of p(+)-n junction GaAs solar cells by a novel method

A novel method for making p(+)-n diffused junction GaAs solar cells, with the formation of a diffusion source, an anti-reflective coating, and a protective cover glass in a single chemical-vapor deposition operation is discussed. Consideration is given to device fabrication and to solar-cell characteristics. The advantages of the technique are that the number of process steps is kept to an absolute minimum, the fabrication procedure is low-cost, and the GaAs surface is protected during the entire operation.

Ghandhi, S. K.↗
NASA NTRS1984

Equivalent electron fluence for space qualification of shallow junction heteroface GaAs solar cells

It is desirable to perform qualification tests prior to deployment of solar cells in space power applications. Such test procedures are complicated by the complex mixture of differing radiation components in space which are difficult to simulate in ground test facilities. Although it has been shown that an equivalent electron fluence ratio cannot be uniquely defined for monoenergetic proton exposure of GaAs shallow junction cells, an equivalent electron fluence test can be defined for common spectral components of protons found in space. Equivalent electron fluence levels for the geosynchronous environment are presented.

Wilson, J. W.↗
NASA NTRS1986

Solar-Cell-Junction Processing System

System under development reduces equipment costs. Processing system will produce solar-cell junctions on 4 in. (10.2 cm) round silicon wafers at rate of 10 to seventh power per year. System includes non-mass-analyzed ion implanter, microcomputer-controlled, pulsed-electron-beam annealer, and wafertransport system with vacuum interlock. These features eliminate large, expensive magnet and plates, circuitry, and power source otherwise needed for scanning.

Bunker, S. N.↗
NASA NTRS1985

A closed cycle cascade Joule Thomson refrigerator for cooling Josephson junction magnetometers

A closed cycle cascade Joule Thomson refrigerator designed to cool Josephson Junction magnetometers to liquid helium temperature is being developed. The refrigerator incorporates 4 stages of cooling using the working fluids CF4 and He. The high pressure gases are provided by a small compressor designed for this purpose. The upper stages have been operated and performance will be described.

Tward, E.↗
NASA NTRS1986

A superconducting tunnel junction receiver for millimeter-wave astronomy

The development and construction of an ultralow noise heterodyne receiver for millimeter wave astronomy is described along with its use for 115.3 GHz Co line observations. The receiver uses a Superconductor-Insulator-Superconductor (SIS) quasiparticle tunnel junction mixer to convert the millimeter wave signal to a microwave intermediate frequency. Experiments aimed at quantitative verification of J. R. Tucker's quantum mixer theory are studied, to see whether it could be used as the basis for the design of a practical receiver. The experimental results were in excellent agreement with the theory, assuming the three frequency approximation. Infinite available gain and negative output resistance were observed for the first time, nonclassical effects which are not seen in conventional diode mixers. Using Tucker's theory, an SIS receiver was then designed and constructed. At 115 GHz, the single sideband receiver noise temperature is 83K, the lowest ever reported in this frequency range. A CO survey toward Cygnus-X region, using this SIS receiver on the Columbia-GISS 4 ft. telescope, is also described.

Pan, S. K.↗
NASA NTRS1986

Theoretical values of various parameters in the Gummel-Poon model of a bipolar junction transistor

Various parameters in the Gummel-Poon model of a bipolar junction transistor are expressed in terms of the basic structure of a transistor. A consistent theoretical approach is used which facilitates an understanding of the foundations and limitations of the derived formulas. The results enable one to predict how changes in the geometry and composition of a transistor would affect performance.

Benumof, R.↗
NASA NTRS1986

Tectonics and evolution of the Juan Fernandez microplate at the Pacific-Nazca-Antarctic triple junction

Magnetic and bathymetric profiles derived from the R/V Endeavor survey and focal mechanism studies for earthquakes on two of the Juan Fernandez microplate boundaries are analyzed. It is observed that the Nazca-Juan Fernandez pole is in the northern end of the microplate since the magnetic lineation along the East Ridge of the microplate fans to the south. The calculation of the relative motion of the Juan Fernandez-Pacific-Nazca-Antarctic four-plate system using the algorithm of Minster et al. (1974) is described. The development of tectonic and evolutionary models of the region is examined. The tectonic model reveals that the northern boundary of the Juan Fernandez microplate is a zone of compression and that the West Ridge and southwestern boundary are spreading obliquely; the evolutionary model relates the formation of the Juan Fernandez microplate to differential spreading rates at the triple junction.

Anderson-Fontana, S.↗
NASA NTRS1986

Room temperature deposition of superconducting NbN for superconductor-insulator-superconductor junctions

The deposition of stoichiometric B1-crystal-structure (111) NbN films on glass or sapphire substrates by reactive dc magnetron sputtering is reported. High-purity Ar-N2 mixtures are used in the apparatus described by Thakoor et al. (1985), and typical deposition parameters are given as background pressure about 10 ntorr, voltage -325 V, current 1 A, deposition rate 1.35 nm/s, film thickness 500 nm, P(Ar) 5-17 mtorr, initial P(N2) 2-6 mtorr, and room temperature. The N2 consumption-injection characteristics are studied and found to control NbN formation using well-conditioned Nb targets. Films with transition temperatures 15-16 K are obtained at P(Ar) = 12.9 + or - 0.2 mtorr and P(N2) = 3.7 + or - 0.1 mtorr. SIS junctions of area about 0.001 sq cm fabricated using the NbN films are shown to have I-V characteristics with nonlinearity parameter about 110 and NbN superconducting-gap parameter Delta = about 2.8 meV.

Thakoor, S.↗
NASA NTRS1987

Comparative performance of diffused junction indium phosphide solar cells

A comparison is made between indium phosphide solar cells whose p-n junctions were processed by open tube capped diffusion, and closed tube uncapped diffusion, of sulfur into Czochralski grown p-type substrates. Air mass zero, total area, efficiencies ranged from 10 to 14.2 percent, the latter value attributed to cells processed by capped diffusion. The radiation resistance of these latter cells was slightly better, under 1 MeV electron irradiation. However, rather than being process dependent, the difference in radiation resistance could be attributed to the effects of increased base dopant concentration. In agreement with previous results, both cells exhibited radiation resistance superior to that of gallium arsenide. The lowest temperature dependency of maximum power was exhibited by the cells prepared by open tube capped diffusion. Contrary to previous results, no correlation was found between open circuit voltage and the temperature dependency of Pmax. It was concluded that additional process optimization was necessary before concluding that one process was better than another.

Weinberg, I.↗
NASA NTRS1987

A V-grooved AlGaAs/GaAs passivated PN junction

A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration. An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A wet chemical etching process was used to produce a V-pattern with a 7.0 micron periodicity. Reflectivity measurements substantiate the expected decrease in solar reflectance. Scanning electron microscopy techniques were used to confirm the presence of the AlGaAs layer and verify the existence of a pn junction.

Bailey, Sheila G.↗
NASA NTRS1986

Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

Leon, R. P.↗
NASA NTRS1987

Endwall heat transfer in the junction region of a circular cylinder normal to a flat plate at 30 and 60 degrees from stagnation point of the cylinder

The objective of this experimental study was to investigate the influence of horseshoe vortex on the heat transfer on a flat plate near the base of a protruding cylinder. The partial shock reflection technique was used to produce the flow Mach number of 0.14 which simulated the mean inlet flow Mach number for the first stage vanes of the turbine after combustor. Fast response thin-film platinum heat gages were used to measure the heat transfer flux for radial distances of 0.75, 0.875, 1.0, 1.125 cylinder diameter. For a low Reynolds number of 20,000, r/D = 0.75, and angular location from the stagnation point = 60 deg, the maximum increase in the heat transfer rate with the cylinder was observed to be approximately 460 percent greater than without the cylinder. On the other hand, the increase in the heat flux for a high Reynolds number of 300,000 was approximately 70 percent greater. For the heat gages located along 30 deg and 60 deg angular locations from the stagnation point, the strong effect of the horseshoe vortex was observed in the junction region. The increase in the heat transfer rate depended on the type of boundary layer and on the boundary layer thickness ahead of the cylinder.

Nagamatsu, H. T.↗
NASA NTRS1988

Solar energy conversion through the interaction of plasmons with tunnel junctions. Part A: Solar cell analysis. Part B: Photoconductor analysis

A solar cell utilizing guided optical waves and tunnel junctions was analyzed to determine its feasibility. From this analysis, it appears that the limits imposed upon conventional multiple cell systems also limit this solar cell. Due to this limitation, it appears that the relative simplicity of the conventional multiple cell systems over the solar cell make the conventional multiple cell systems the more promising candidate for improvement. It was discovered that some superlattice structures studied could be incorporated into an infrared photodetector. This photoconductor appears to be promising as a high speed, sensitive (high D sup star sub BLIP) detector in the wavelength range from 15 to over 100 micrometers.

Welsh, P. E.↗
NASA NTRS1987

Behavior of ion-implanted junction diodes in 3C SiC

p-n junction diodes have been formed by ion implantation of B or Al in 3C SiC and annealing at 1365 C. The current-voltage characteristics of the Al-implanted structures show little rectification. The B-implanted diodes show rectification, with ideality factors of 2.2 and higher, breakdown voltages between 5 and 10 V, and a series resistance of the order of 20 kohm. The current-voltage characteristics were measured between room temperature and 270 C. The extracted ideality factors increase with temperature.

Avila, R. E.↗
NASA NTRS1987

Comparative radiation resistance, temperature dependence and performance of diffused junction indium phosphide solar cells

Indium phosphide solar cells whose p-n junctions were processed by the open tube capped diffusion and by the closed tube uncapped diffusion of sulfur into Czochralski-grown p-type substrates are compared. Differences found in radiation resistance were attributed to the effects of increased base dopant concentration. Both sets of cells showed superior radiation resistance to that of gallium arsenide cells, in agreement with previous results. No correlation was, however, found between the open-circuit voltage and the temperature dependence of the maximum power.

Weinberg, I.↗
NASA NTRS1987

A V-grooved AlGaAs/GaAs passivated pn junction

A passivated, V-grooved GaAs solar cell offers important advantages in terms of improved optical coupling, higher short-circuit current, and increased tolerance to particle radiation when compared to the planar cell configuration. An AlGaAs epilayer has been deposited on a p-type GaAs epilayer grown on an n-type V-grooved GaAs surface using MOCVD. A wet chemical etching process was used to produce a V-pattern with a 7.0-micron periodicity. Reflectivity measurements substantiate the expected decrease in solar reflectance. Scanning electron microscopy techniques were used to confirm the presence of the AlGaAs layer and verify the existence of a pn junction.

Bailey, S. G.↗
NASA NTRS1989

Channelized coplanar waveguide: Discontinuities, junctions, and propagation characteristics

A new variant of CPW which has been termed channelized CPW, CCPW, is presented. Measured and computed propagation characteristics are presented. Lumped equivalent circuit element values for a CCPW open circuit and right angle bend have been obtained. CCPW power divider junctions and a coax-to-CCPW in-phase, radial power divider are also presented.

Simons, Rainee N.↗