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At least 613 records · Page 34
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Indium phosphide shallow homojunction solar cells made by metalorganic chemical vapor deposition

The fabrication of highly efficient indium phosphide solar cells by metalorganic chemical vapor deposition is reported. Since InP can be annealed at temperatures at low as approximately 100 C and the annealing occurs under solar illumination itself, this accomplishment is relevant to space power systems. A total area air mass zero efficiency of 17.9 percent and an air mass 1.5 efficiency of 20.4 percent are reported. Electrical characterization identifying loss mechanisms is made, and a shallow homojunction design is discussed along with possible improvements.

Spitzer, M. B.↗
NASA NTRS1988

Development program for 1.93-micron lasers

For the first time lasers operating at 1.93 microns were demonstrated. The lasers were fabricated by Vapor Phase Epitaxial (VPE) growth techniques currently used for the fabrication of high power lasers at 1.3 microns. The structure of these laser diodes consisted of compositionally graded, sulfur-doped InAsP, grown on an InP substrate; a constant-composition n+InAs(0.27)P(0.73) layer, which is the first cladding layer; an In(0.66)Ga(0.34)As layer, which is the active region, and a second InAs(0.27)P(0.73) layer. The devices were oxide-stripe DH lasers (gain-guided only). The best devices had 80 K lasing thresholds in the range of from 80 to 150 mA, and T sub o (below 220 K) in the range of 60 to 90 K. The highest observed temperature of oscillation was 15.5 C. The highest observed power output at 80 K was in the range of 3 to 5 mW. The calculated delta I/delta T was 4.4 A/K. As a part of the materials development, PIN homojunction detectors having the band edge near 1.93 were also fabricated. The best devices (100 micron diameter, mesa structure) exhibited room temperature dark currents in the range of from 20 to 50 nA and had QE at 1.93 microns in the range of 35 to 40 percent. In addition to the device results, the InGaAs-InAsP materials system was extensively investigated and low defect density layers can now be grown allowing for significant device performance improvement.

Longeway, P.↗
NASA NTRS1987

Remote gate capacitance-voltage studies for noninvasive surface characterization

A measurement technique has been developed which allows noncontact capacitance-voltage measurements to be made using a gate electrode located remote from the semiconductor surface under study. With gate electrodes about 0.5 mm in diameter and gate to semiconductor separations of about 1500 A, it was possible to generate data entirely comparable to that obtained with integrated MIS structures but with the advantage that there was access directly to the free-semiconductor surface. This technique was applied to bulk single-crystal Si and InP samples.

Chang, R. R.↗
NASA NTRS1988

Plasma deposition of amorphous hydrogenated carbon films on III-V semiconductors

Amorphous hydrogenated carbon films were grown on GaAs, InP and fused silica substrates using plasmas generated from hydrocarbon gases. Methane and n-butane sources were utilized. The effects of flow rate and power density on film growth were investigated. Carbon was the major constituent in the films. The degree of asymmetry at the carbon-semiconductor interface was approximately independent of the power density. Different H-C bonding configurations were detected by the technique of secondary-ion mass spectrometry. Band gaps up to 3 eV were obtained from optical absorption studies. Breakdown strengths as high as 600 MV/m were measured.

Pouch, John J.↗
NASA NTRS1987

Diffusion length measurement in bulk and epitaxially grown III-V semiconductors using charge collection microscopy

Diffusion lengths and surface recombination velocities were measured in GaAs diodes and InP finished solar cells. The basic technique used was charge collection microscopy, also known as electron beam induced current (EBIC). The normalized currents and distances from the pn junction were read directly from the calibrated curves obtained while using the line-scan mode in an SEM. These values were then equated to integral and infinite series expressions resulting from the solution of the diffusion equation with both extended-generation and point-generation functions. This expands previous work by examining both thin and thick samples. The surface recombination velocity was either treated as an unknown in a system of two equations or measured directly using low e(-) beam accelerating voltages. These techniques give accurate results by accounting for the effects of surface recombination and the finite size of the generation volume.

Leon, R. P.↗
NASA NTRS1988

Extremely low nonalloyed and alloyed contact resistance using an InAs cap layer on InGaAs by molecular-beam epitaxy

Extremely low alloyed and nonalloyed ohmic contact resistances have been formed on n-type InAs/In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As structures grown on InP(Fe) by molecular-beam epitaxy. To insure the accuracy of the small contact resistances measured, an extended transmission line model was used to extrapolate contact resistances from test patterns with multiple gap spacings varying from 1 to 20 microns. For a 150-A-thick InAs layer doped to 2 x 10 to the 18th/cu cm and a 0.1-micron-thick InGaAs layer doped to 1 x 10 to the 18th/cu cm, a specific contact resistance of 2.6 x 10 to the -8th ohm-asterisk sq cm was measured for the nonalloyed contact, while a resistance less than 1.7 x 10 to the -8th ohm-asterisk sq cm is reported for the alloyed contact. Conventional Au-Ge/Ni/Au was used for the ohmic metal contact and alloying was performed at 500 C for 50 s in flowing H2. Using a thermionic field emission model, the barrier height at the InAs/InGaAs interface was calculated to be 20 meV.

Peng, C. K.↗
NASA NTRS1988

Direct-current magnetron fabrication of indium tin oxide/InP solar cells

Efficient solar cells of indium tin oxide (ITO)/InP have been fabricated using dc magnetron deposition of the ITO into single-crystal InP substrates. Efficiencies of over 16.5 percent have been achieved, the highest ever recorded for devices of this construction. The results of studies of the annealing behavior of the cells and observations of interfacial changes using Raman spectroscopy and secondary ion mass spectroscopy, together with measurements of light and dark current/voltage and quantum efficiency characteristics, are used to model the behavior of the cells and explain their lack of sensitivity to fabrication conditions.

Coutts, T. J.↗
NASA NTRS1989

Optical Processing With Photorefractive Semiconductors

Experimental phase-conjugate four-wave-mixing apparatus used to demonstrate capabilities of GaAs (and potentially of other photorefractive semiconductors like InP and CdTe) for optical processing of information. With modifications, performs any of three basic image-processing functions: transfer to different light beam, enhancement of edges, and autocorrelation. Includes crystal of GaAs of 5 by 9 by 9 mm with cubic crystalline axes. Advantages include high speed and compatibilty with other semiconductor devices.

Cheng, Li-Jen↗
NASA NTRS1989

The NASA Space Solar Cell Advanced Research Program

Two major requirements for space solar cells are high efficiency and survivability in the naturally occurring charged particle space radiation environment. Performance limits for silicon space cells are well understood. Advanced cells using GaAs and InP are under development to provide significantly improved capability for the future.

Flood, Dennis J.↗
NASA NTRS1989

Space Photovoltaic Research and Technology, 1988. High Efficiency, Space Environment, and Array Technology

The 9th Space Photovoltaic Research and Technology conference was held at the NASA Lewis Research Center from April 19 to 21, 1988. The papers and workshop summaries report remarkable progress on a wide variety of approaches in space photovoltaics, for both near and far term applications. Among the former is the recently developed high efficiency GaAs/Ge cell, which formed the focus of a workshop discussion on heteroepitaxial cells. Still aimed at the long term, but with a significant payoff in a new mission capability, are InP cells, with their potentially dramatic improvement in radiation resistance. Approaches to near term, array specific powers exceeding 130 W/kg are also reported, and advanced concentrator panel technology with the potential to achieve over 250 W/sq m is beginning to take shape.

Source record↗
NASA NTRS1989

On-orbit results of the LIPS 3/InP homojunction solar cell experiment

The flight performance of NASA Lewis Research Center's indium phosphide homojunction solar cell module on the LIPS 3 satellite is presented. A module of four n+p cells was fabricated and has been on-orbit on the LIPS 3 spacecraft since 1987. The experimental objective is the measurement of InP cell performance in the natural radiation environment of the 1100 kilometer altitude, 60 deg inclination, circular orbit. Flight data from the first year is near expected values, with no degradation in short-circuit current. The temperature dependence of current-voltage parameters is included along with the laboratory radiation tolerance studies necessary for normalization and analysis of the data. Details of the cell structure and flight module design are also discussed.

Brinker, David J.↗
NASA NTRS1989

NASA advanced space photovoltaic technology-status, potential and future mission applications

The NASA program in space photovoltaic research and development encompasses a wide range of emerging options for future space power systems, and includes both cell and array technology development. The long range goals are to develop technology capable of achieving 300 W/kg for planar arrays, and 300 W/sq m for concentrator arrays. InP and GaAs planar and concentrator cell technologies are under investigation for their potential high efficiency and good radiation resistance. The Advanced Photovoltaic Solar Array (APSA) program is a near term effort aimed at demonstrating 130 W/kg beginning of life specific power using thin (62 micrometer) silicon cells. It is intended to be technology transparent to future high efficiency cells and provides the baseline for development of the 300 W/kg array.

Flood, Dennis J.↗
NASA NTRS1988

Properties of multiple quantum wells and their use in high-speed detectors and modulators

Quantum well systems lattice matched to GaAs and InP have emerged as important materials for use in long wavelength optoelectronic devices. Intrinsic problems associated with the growth of these quantum wells by molecular beam epitaxy are discussed and the luminescence properties of state-of-art quantum wells, using novel growth techniques are described. Finally, the properties of detectors, modulators and integrated devices made with these heterojunction materials are described and discussed.

Bhattacharya, Pallab↗
NASA NTRS1989

NASA advanced space photovoltaic technology: Status, potential and future mission applications

The long term goals of the NASA program in space photovoltaic research are presented. The long range goals are to develop technology capable of achieving 300 W/kg for planar arrays and 300 W per sq m for concentrator arrays. InP and GaAs planar and concentrator cell research projects are described. The near term program of developing the Advanced Photovoltaic Solar Array (APSA) intended to produce 130 W/kg using thin (62 micron) silicon cells, is described. Ways in which this program will provide a baseline for development of 300 W/kg arrays are described.

Flood, Dennis J.↗
NASA NTRS1989

On-orbit results of the LIPS 3/InP homojunction solar cell experiment

The flight performance of the NASA indium phosphide homojunction cell module on the LIPS 3 satellite is presented. The experimental objectivewas to measure the InP cell performance in the natural radiation environment in a circular 1100 km altitude orbit inclined 60 degrees. Flight data for the first year is close to expected values. No degradation in the short-circuit current is seen. Details of cell structure and flight module design are discussed.

Brinker, David J.↗
NASA NTRS1990

Recent results from advanced research on space solar cells at NASA

The NASA program in space photovoltaic research and development encompasses a wide range of emerging options for future space power systems, and includes both cell and array technology development. The long range goals are to develop technology capable of achieving 300 W/kg for planar arrays, and 300 W/sq m for concentrator arrays. InP and GaAs planar and concentrator cell technologies are under investigation for their potential high efficiency and good radiation resistance. The Advanced Photovoltaic Solar Array (APSA) program is a near term effort aimed at demonstrating 130 W/kg beginning of life specific power using thin (62 pm) silicon cells. It is intended to be technology transparent to future high efficiency cells and provides the baseline for development of the 300 W/kg array.

Flood, Dennis J.↗
NASA NTRS1990

Development of a unique laboratory standard indium gallium arsenide detector for the 500 to 1700 micron spectral region, phase 2

In the course of this work, 5 mm diameter InGaAs pin detectors were produced which met or exceeded all of the goals of the program. The best results achieved were: shunt resistance of over 300 K ohms; rise time of less than 300 ns; contact resistance of less than 20 ohms; quantum efficiency of over 50 percent in the 0.5 to 1.7 micron range; and devices were maintained and operated at 125 C without deterioration for over 100 hours. In order to achieve the goals of this program, several major technological advances were realized, among them: successful design, construction and operation of a hydride VPE reactor capable of growing epitaxial layers on 2 inch diameter InP substrates with a capacity of over 8 wafers per day; wafer processing was upgraded to handle 2 inch wafers; a double layer Si3N4/SiO2 antireflection coating which enhances response over the 0.5 to 1.7 micron range was developed; a method for anisotropic, precisely controlled CH4/H2 plasma etching for enhancement of response at short wavelengths was developed; and electronic and optical testing methods were developed to allow full characterization of detectors with size and spectral response characteristics. On the basis of the work and results achieved in this program, it is concluded that large size, high shunt resistance, high quantum efficiency InGaAs pin detectors are not only feasible but also manufacturable on industrial scale. This device spans a significant portion of visible and near infrared spectral range and it will allow a single detector to be used for the 0.5 to 1.7 micron spectral region, rather than the presently used silicon (for 0.5 to 1.1 microns) and germanium (0.8 to 1.7 microns).

Ban, Vladimir S.↗
NASA NTRS1988

Properties of undoped and manganese-doped InGaAsP grown by liquid phase electroepitaxy

Undoped and manganese-doped InGaAsP epilayers lattice matched to InP substrate have been grown by the liquid phase electroepitaxy technique. The dependence of growth velocity on current density for both undoped and doped layers has been studied. Layers of good surface morphology with hole concentrations in the range from 8 x 10 to the 16th to 4 x 10 to the 18th/cu cm have been achieved. The activation energy of the manganese acceptor level was estimated to vary from 57 to 32 meV with increasing hole concentration. The temperature dependence of carrier mobility data was analyzed in terms of different scattering mechanisms and the values of acceptor and donor densities determined were compared with those obtained from the temperature variation of Hall concentration data. Dependences of photoluminescence peak energy and intensity on the temperature and incident excitation levels have been investigated.

Iyer, Shanthi N.↗