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At least 613 records · Page 34
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Modification of terahertz emission spectrum using microfabricated spintronic emitters

Terahertz (THz) radiation with sub-millimeter wavelength falls in the gap between optical and radio frequencies. Conventional THz emitters do not intertwine with spin degrees of freedom. However, it was recently shown that broadband THz radiation can be efficiently created also by exploiting spin-based effects on ultrafast time scales. Here, we demonstrate the generation and control of THz radiation from microstructured spintronic THz emitters based on the inverse spin-Hall effect. Using time-domain THz spectroscopy, we compare the THz spectra of different stripe patterns made of Fe/Pt bilayers with a spectrum obtained from an extended Fe/Pt bilayer film. It is found that the THz spectrum can be altered by a proper choice of the microstructure dimensions. The experimentally observed spectra are interpreted in terms of a simplified multi-slit interference model, which captures the main experimental features. Our results pave the way for an efficient control of THz light emitted from magnetic heterostructures. This is a crucial step forward for the design and realization of directional THz sources.

Wu, Weipeng↗
DOE OSTI2020

Evidence of Ba-substitution induced spin-canting in the magnetic Weyl semimetal EuCd 2 As 2

Recently EuCd 2 As 2 was predicted to be a magnetic Weyl semimetal with a lone pair of Weyl nodes generated by A-type antiferromagnetism and protected by a rotational symmetry. However, it was soon discovered that the actual magnetic structure broke the rotational symmetry and internal pressure was later suggested as a route to stabilize the desired magnetic state. In this work we test this prediction by synthesizing a series of Eu 1-x BaxCd 2 As 2 single crystals and studying their structural, magnetic, and transport properties via both experimental techniques and first-principles calculations. We find that small concentrations of Ba (~3%–10%) lead to a small out-of-plane canting of the Eu moment. However, for higher concentrations this effect is suppressed and a nearly in-plane model is recovered. Studying the transport properties we find that all compositions show evidence of an anomalous Hall effect dominated by the intrinsic mechanism as well as large negative magnetoresistances in the longitudinal channel. A nonmonotonic evolution of the transport properties is seen across the series which correlates to the proposed canting suggesting canting may enhance the topological effects. Careful density functional theory calculations using an all-electron approach revise prior predictions finding a purely ferromagnetic ground state with in-plane moments for both the EuCd 2 As 2 and Eu 0.5 Ba 0.5 Cd 2 As 2 compounds, corroborating our experimental findings. This work suggests that Ba substitution can tune the magnetic properties in unexpected ways which correlate to changes in measures of topological properties, encouraging future work to locate the ideal Ba concentration for Eu moment canting.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1973

Magnetic-field measurements for the Lewis Research Center cyclotron

The magnetic field of the Lewis Center cyclotron was mapped by using a Hall-effect magnetic-field transducer. Main-field Fourier coefficients were determined on a polar mesh of 40 radii for each of seven levels of main-field coil current. Incremental fields for eight sets of trim coils and two sets of harmonic coils were also determined at four of these main-field levels. A stored-program, digital computer was used to perform the measurements. The process was entirely automatic; all data-taking and data-reduction activities were specified by the computer programs. A new method for temperature compensation of a Hall element was used. This method required no temperature control of the element. Measurements of the Hall voltage and Hall-element resistance were sufficient to correct for temperature effects.

Fessler, T. E.↗
DOE OSTI2020

Manipulation of the van der Waals Magnet Cr 2 Ge 2 Te 6 by Spin–Orbit Torques

In this work, we report measurements of current-induced thermoelectric and spin-orbit torque effects within devices in which multilayers of the semiconducting 2-dimensional van der Waals magnet Cr 2 Ge 2 Te 6 (CGT) are integrated with Pt and Ta metal overlayers. We show that the magnetic orientation of the CGT can be detected accurately either electrically (using an anomalous Hall effect) or optically (using magnetic circular dichroism) with good consistency. The samples exhibit large thermoelectric effects, but nevertheless the spin-orbit torque can be measured quantitatively using the angle-dependent second harmonic Hall technique. For CGT/Pt we measure the spin-orbit torque efficiency to be similar to conventional metallic-ferromagnet/Pt devices with the same Pt resistivity. The interfacial transparency for spin currents is therefore similar in both classes of devices. Our results demonstrate the promise of incorporating semiconducting 2D magnets within spin-orbitronic and magneto-thermal devices.

2D magnets↗
DOE OSTI2020

Néel-type skyrmion in WTe 2 /Fe 3 GeTe 2 van der Waals heterostructure

The promise of high-density and low-energy-consumption devices motivates the search for layered structures that stabilize chiral spin textures such as topologically protected skyrmions. At the same time, recently discovered long-range intrinsic magnetic orders in the two-dimensional van der Waals materials provide a new platform for the discovery of novel physics and effects. Here we demonstrate the Dzyaloshinskii–Moriya interaction and Néel-type skyrmions are induced at the WTe 2 /Fe 3 GeTe 2 interface. Transport measurements show the topological Hall effect in this heterostructure for temperatures below 100 K. Furthermore, Lorentz transmission electron microscopy is used to directly image Néel-type skyrmion lattice and the stripe-like magnetic domain structures as well. The interfacial coupling induced Dzyaloshinskii–Moriya interaction is estimated to have a large energy of 1.0 mJ m –2 . This work paves a path towards the skyrmionic devices based on van der Waals layered heterostructures.

42 ENGINEERING↗
DOE OSTI2022

Challenges to magnetic doping of thin films of the Dirac semimetal Cd 3 As 2

Magnetic doping of topological quantum materials provides an attractive route for studying the effects of time-reversal symmetry breaking. Thus motivated, we explore the introduction of the transition metal Mn into thin films of the Dirac semimetal Cd 3 A s2 during growth by molecular beam epitaxy. Scanning transmission electron microscopy measurements show the formation of a Mn-rich phase at the top surface of Mn-doped Cd 3 A s2 thin films grown using both uniform doping and delta doping. This suggests that Mn acts as a surfactant during epitaxial growth of Cd 3 A s2 , resulting in phase separation. Magnetometry measurements of such samples indicate a ferromagnetic phase with out-of-plane magnetic anisotropy. Electrical magneto-transport measurements of these films as a function of temperature, magnetic field, and chemical potential reveal a lower carrier density and higher electron mobility compared with pristine Cd 3 A s2 films grown under similar conditions. This suggests that the surfactant effect might also serve to remove impurities from the bulk of the film. Further, we observe robust quantum transport (Shubnikov-de Haas oscillations and an incipient integer quantum Hall effect) in very thin (7 nm) Cd 3 A s2 films despite being in direct contact with a structurally disordered surface ferromagnetic overlayer.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Strain Effects on Rashba Spin–Orbit Coupling of 2D Hole Gases in GeSn/Ge Heterostructures

A demonstration of 2D hole gases in GeSn/Ge heterostructures with a mobility as high as 20 000 cm 2 V –1 s –1 is given. Both the Shubnikov–de Haas oscillations and integer quantum Hall effect are observed, indicating high sample quality. The Rashba spin-orbit coupling (SOC) is investigated via magneto-transport. Further, a transition from weak localization to weak anti-localization is observed, which shows the tunability of the SOC strength by gating. The magneto-transport data are fitted to the Hikami–Larkin–Nagaoka formula. The phase-coherence and spin-relaxation times, as well as spin-splitting energy and Rashba coefficient of the k-cubic term, are extracted. Furthermore, the analysis reveals that the effects of strain and confinement potential at a high fraction of Sn suppress the Rashba SOC caused by the GeSn/Ge heterostructures.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Singular Hall Response from a Correlated Ferromagnetic Flat Nodal‐Line Semimetal

Abstract Topological quantum phases are largely understood in weakly correlated systems, which have identified various quantum phenomena, such as the spin Hall effect, protected transport of helical fermions, and topological superconductivity. Robust ferromagnetic order in correlated topological materials particularly attracts attention, as it can provide a versatile platform for novel quantum devices. Here, a singular Hall response arising from a unique band structure of flat topological nodal lines in combination with electron correlation in a van der Waals ferromagnetic semimetal, Fe 3 GaTe 2 , with a high Curie temperature ofT c = 347 K is reported. High anomalous Hall conductivity violating the conventional scaling, resistivity upturn at low temperature, and a large Sommerfeld coefficient are observed in Fe 3 GaTe 2 , which implies heavy fermion features in this ferromagnetic topological material. The scanning tunneling microscopy, circular dichroism in angle‐resolved photoemission spectroscopy, and theoretical calculations support the original electronic features of the material. Thus, low‐dimensional Fe 3 GaTe 2 with electronic correlation, topology, and room‐temperature ferromagnetic order appears to be a promising candidate for robust quantum devices.

Chemistry↗
DOE OSTI2020

α Irradiation Response on the Electronic Transport Properties of p -B 12 P 2

B 12 P 2 , a wide bandgap semiconductor, has been previously reported to self-heal from high-energy electron bombardment as determined from transmission electron microscopy. However, the effect of irradiation on the electronic transport properties of B 12 P 2 has not been studied. We report electrical transport measurements on B 12 P 2 after α irradiation. The temperature-dependent Hall effect was measured on p-type B 12 P 2 after successive α irradiation from 210 Po over a fluence range of 1 × 10 11 –1 × 10 13 α/cm 2 to test for self-healing of B 12 P 2 to α bombardment. Prior to irradiation, B 12 P 2 displayed electrical transport characteristics of both hopping and impurity/defect band conduction due to background impurities and growth-induced defects. Fluences of 5 × 10 12 α/cm 2 or greater caused a decrease in the hole mobility and an increase in defect band conduction, suggesting defect accumulation in B 12 P 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2024

Study of graphene p-n junctions formed by the electrostatic modification of the SiO2 substrate

Abstract We study the transport properties of mm-scale CVD graphene p-n junctions, which are formed in a single gated graphene field effect transistor configuration. Here, an electrical-stressing-voltage technique served to modify the electrostatic potential in the SiO 2 /Si substrate and create the p-n junction. We examine the transport characteristics about the Dirac points that are localized in the perturbed and unperturbed regions in the graphene channel and note the quantitative differences in the Hall effect between the perturbed and unperturbed regions. The results also show that the longitudinal resistance is highly sensitive to the external magnetic field when the Hall bar device operates as a p-n junction.

Science & Technology - Other Topics↗
NASA NTRS2003

Phenomenological Model of Current Sheet Canting in Pulsed Electromagnetic Accelerators

The phenomenon of current sheet canting in pulsed electromagnetic accelerators is the departure of the plasma sheet (that carries the current) from a plane that is perpendicular to the electrodes to one that is skewed, or tipped. Review of pulsed electromagnetic accelerator literature reveals that current sheet canting is a ubiquitous phenomenon - occurring in all of the standard accelerator geometries. Developing an understanding of current sheet canting is important because it can detract from the propellant sweeping capabilities of current sheets and, hence, negatively impact the overall efficiency of pulsed electromagnetic accelerators. In the present study, it is postulated that depletion of plasma near the anode, which results from axial density gradient induced diamagnetic drift, occurs during the early stages of the discharge, creating a density gradient normal to the anode, with a characteristic length on the order of the ion skin depth. Rapid penetration of the magnetic field through this region ensues, due to the Hall effect, leading to a canted current front ahead of the initial current conduction channel. In this model, once the current sheet reaches appreciable speeds, entrainment of stationary propellant replenishes plasma in the anode region, inhibiting further Hall-convective transport of the magnetic field; however, the previously established tilted current sheet remains at a fairly constant canting angle for the remainder of the discharge cycle, exerting a transverse J x B force which drives plasma toward the cathode and accumulates it there. This proposed sequence of events has been incorporated into a phenomenological model. The model predicts that canting can be reduced by using low atomic mass propellants with high propellant loading number density; the model results are shown to give qualitative agreement with experimentally measured canting angle mass dependence trends.

Markusic, Thomas↗
DOE OSTI2026

Pressure-Induced Metal-like Transport and Magnetoresistance in a Au 2+ –Au 3+ Halide Perovskite

The Cs 4 Au II Au III 2 Cl 12 perovskite (1), featuring AuCl 4 trimers separated by vacancies, enables the first high-pressure study of Au 2+/3+ mixed-valence. Our computational analysis of the gold frontier orbitals suggests that the Au 2+ →Au 3+ intervalence charge transfer (IVCT) occurs across the vacancies. Computational structures indicate that these vacancies rapidly shrink with pressure and the Au 2+ and Au 3+ coordination spheres become very similar at the phase transition to nearly cubic symmetry at ca. 15 GPa─enabling facile IVCT. Although the activation energy of conductivity of 0.73(4) meV and far-infrared absorption indicate a small but nonzero bandgap, ambient thermal energy drives the IVCT, affording metallic properties: prominent infrared reflectivity and transport values of 10 2 S·cm –1 . This prompted us to perform the first high-pressure studies of magnetoresistance (MR) and Hall effect in halide perovskites. At 16 GPa, the MR increases by 9.3% at 2 K and 9 T; this value is maintained up to 27 GPa, when a local distortion drives electronic localization. By globally fitting the MR and Hall resistance to a two-carrier model we quantify how the carrier densities and mobilities evolve with pressure. Thus, metal-like transport and MR in 1 is driven by a pressure-induced transition from localized to partially delocalized mixed-valence.

Deschene, Christina R. [Stanford University, CA (U↗
DOE OSTI2021

Enhanced anomalous Nernst effect in disordered Dirac and Weyl materials

Here, we analyze the thermoelectric response of Dirac and Weyl semimetals using the semiclassical approach, focusing on the extrinsic contributions due to skew-scattering and side jump. Our results apply to the linear response Nernst effect in ferromagnetic Dirac materials such as Fe 3 Sn 2 and Weyl semimetals like Co 3 Sn 2 S 2 . In the case of Fe 3 Sn 2 we obtain a very good agreement with known experimental anomalous Hall effect measurements, and based on that we predict a large Nernst effect in this material.We also extend the investigation to second-order response, focusing on monolayer graphene on hBN with trigonal warping as an example. Our analysis indicates that the extrinsic contributions can be a significant component of anomalous Nernst response and may be used to explain an enhanced thermoelectric response.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Dissipative magnetohydrodynamics for nonresistive relativistic plasmas: An implicit second-order flux-conservative formulation with stiff relaxation

Based on a 14-moment closure for nonresistive (general-) relativistic viscous plasmas, here we describe a new numerical scheme that is able to handle all first-order dissipative effects (heat conduction, bulk and shear viscosities), as well the anisotropies induced by the presence of magnetic fields. The latter is parametrized in terms of a thermal gyrofrequency or, equivalently, a thermal Larmor radius and allows to correctly capture the thermal Hall effect. By solving an extended Israel-Stewart-like system for the dissipative quantities that enforces algebraic constraints via stiff-relaxation, we are able to cast all first-order dissipative terms in flux-divergence form. This allows us to apply traditional high-resolution shock capturing methods to the equations, making the system suitable for the numerical study of highly turbulent flows. We present several numerical tests to assess the robustness of our numerical scheme in flat spacetime. The 14-moment closure can seamlessly interpolate between the highly collisional limit found in neutron star mergers, and the highly anisotropic limit of relativistic Braginskii magnetohydrodynamics appropriate for weakly collisional plasmas in black-hole accretion problems. We believe that this new formulation and numerical scheme will be useful for a broad class of relativistic magnetized flows.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Nature of the Correlated Insulator States in Twisted Bilayer Graphene

We use self-consistent Hartree-Fock calculations performed in the full $\pi$-band Hilbert space to assess the nature of the recently discovered correlated insulator states in magic-angle twisted bilayer graphene (TBG). In this work, we find that gaps between the flat conduction and valence bands open at neutrality over a wide range of twist angles, sometimes without breaking the system’s valley projected $\mathcal{C}_2\mathcal{T}$ symmetry. Broken spin-valley flavor symmetries then enable gapped states to form not only at neutrality, but also at total moiré band filling $\textit{n}$ = ± $\textit{p}/4$ with integer $\textit{p}$ = 1, 2, 3, when the twist angle is close to the magic value at which the flat bands are most narrow. Because the magic-angle flat band quasiparticles are isolated from remote band quasiparticles only for effective dielectric constants larger than ~20, the gapped states do not necessarily break $\mathcal{C}_2\mathcal{T}$ symmetry and as a consequence the insulating states at $\textit{n}$ = ± 1/ 4 and $\textit{n}$ = ± 3/4 need not exhibit a quantized anomalous Hall effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Scaling, rotation, and channeling behavior of helical and skyrmion spin textures in thin films of Te-doped Cu 2 OSeO 3

Topologically nontrivial spin textures such as vortices, skyrmions, and monopoles are promising candidates as information carriers for future quantum information science. Their controlled manipulation including creation and annihilation remains an important challenge toward practical applications and further exploration of their emergent phenomena. Here, we report controlled evolution of the helical and skyrmion phases in thin films of multiferroic Te-doped Cu 2 OSeO 3 as a function of material thickness, dopant, temperature, and magnetic field using in situ Lorentz phase microscopy. We report two previously unknown phenomena in chiral spin textures in multiferroic Cu 2 OSeO 3 : anisotropic scaling and channeling with a fixed-Q state. The skyrmion channeling effectively suppresses the recently reported second skyrmion phase formation at low temperature. Our study provides a viable way toward controlled manipulation of skyrmion lattices, envisaging chirality-controlled skyrmion flow circuits and enabling precise measurement of emergent electromagnetic induction and topological Hall effects in skyrmion lattices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1993

Fast Overcurrent Tripping Circuit

Fast overcurrent tripping circuit designed for incorporation into power metal oxide/semiconductor field-effect transistor (MOSFET) switching circuit. Serves as fast electronic circuit breaker by sensing voltage across MOSFET's during conduction and switching MOSFET's off within 1 microsecond after voltage exceeds reference value corresponding to tripping current. Acts more quickly than Hall-effect current sensor and, in comparison with shunt current-measuring circuits, smaller and consumes less power. Also ignores initial transient overcurrents during first 5 microseconds of switching cycle.

Sullender, Craig C.↗