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Insights into the Surface Electronic Structure and Catalytic Activity of InO x /Au(111) Inverse Catalysts for CO 2 Hydrogenation to Methanol
In this article, the direct conversion of carbon dioxide (CO 2 ) into methanol (CH 3 OH) via low-temperature hydrogenation is crucial for recycling anthropogenic CO 2 emissions and producing fuels or high value chemicals. Nevertheless, it continues to be a great challenge due to the trade-off between selectivity and catalytic activity. For CO 2 hydrogenation, In 2 O 3 catalysts are known for their high CH 3 OH selectivity. Subsequent studies explored depositing metals on In 2 O 3 to enhance CO 2 conversion. Despite extensive research on metal (M) supported In 2 O 3 catalysts, the role of In-M alloys and M/In 2 O 3 interfaces in CO 2 activation and CH 3 OH selectivity remains unclear. In this work, we have examined the behavior of In/Au(111) alloys and InO x /Au(111) inverse systems during CO 2 hydrogenation using synchrotron-based ambient-pressure X-ray photoelectron spectroscopy (AP-XPS) and catalytic tests in a batch reactor. Indium forms alloys with Au(111) after deposition. The In-Au(111) alloys display high reactivity towards CO 2 and can dissociate the molecule at room temperature to generate InO x nanostructures. At very low coverages of In (≤ 0.05 ML), the InO x nanostructures are not stable under CO 2 hydrogenation conditions and the active In-Au(111) alloys produces mainly CO and little methanol. An increase in indium coverage to 0.3 ML led to stable InOx nanostructures under CO 2 hydrogenation conditions. These InO x /Au(111) catalysts displayed a high selectivity (~ 80 %) towards CH 3 OH production and an activity for CO 2 conversion that was at least 10 times larger than that of plain In 2 O 3 or Cu(111) and Cu/ZnO(000$\overline{1)}$ benchmark catalysts. The results of AP-XPS show that InO x /Au(111) produces methanol via methoxy intermediates. Inverse oxide/metal catalysts containing InOx open up a possibility for improving CO 2 → CH 3 OH conversion in processes associated with the control of environmental pollution and the production of high value chemicals.
Lateral Integration of SnS and GeSe van der Waals Semiconductors: Interface Formation, Electronic Structure, and Nanoscale Optoelectronics
The emergence of atomically thin crystals has allowed extending materials integration to lateral heterostructures where different 2D materials are covalently connected in the plane. The concept of lateral heterostructures can be generalized to thicker layered crystals, provided that a suitably faceted seed crystal presents edges to which a compatible second van der Waals material can be attached layer by layer. Here, we examine the possibility of integrating multilayer crystals of the group IV monochalcogenides SnS and GeSe, which have the same crystal structure, small lattice mismatch, and similar bandgaps. In a two-step growth process, lateral epitaxy of GeSe on the sidewalls of multilayer SnS flakes (obtained by vapor transport of a SnS 2 precursor on graphite) yields heterostructures of laterally stitched crystalline GeSe and SnS without any detectable vertical overgrowth of the SnS seeds and with sharp lateral interfaces. Combined cathodoluminescence spectroscopy and ab initio calculations show the effects of small band offsets on carrier transport and radiative recombination near the interface. Further, the results demonstrate the possibility of forming atomically connected lateral interfaces across many van der Waals layers, which is promising for manipulating optoelectronics, photonics, and for managing charge- and thermal transport.
A Dicopper Nitrenoid by Oxidation of a Cu'Cu' Core: Synthesis, Electronic Structure, and Reactivity
A dicopper nitrenoid complex was prepared by formal oxidative addition of the nitrenoid fragment to a dicopper(I) center by reaction with the iminoiodinane PhINTs (Ts = tosylate). This nitrenoid complex, (DPFN)Cu 2 (μ-NTs)[NTf 2 ] 2 (DPFN = 2,7-bis(fluorodi(2-pyridyl)methyl)-1,8-naphthyridine), is a powerful H atom abstractor that reacts with a range of strong C–H bonds to form a mixed-valence Cu(I)/Cu(II) μ-NHTs amido complex in the first example of a clean H atom transfer to a dicopper nitrenoid core. In line with this reactivity, DFT calculations reveal that the nitrenoid is best described as an iminyl (NR radical anion) complex. The nitrenoid was trapped by the addition of water to form a mixed-donor hydroxo/amido dicopper(II) complex, which was independently obtained by reaction of a Cu 2 (μ-OH) 2 complex with an amine through a protonolysis pathway. Furthermore, this mixed-donor complex is an analogue for the proposed intermediate in copper-catalyzed Chan–Evans–Lam coupling, which proceeds via C–X (X = N or O) bond formation. Treatment of the dicopper(II) mixed donor complex with MgPh 2 (THF) 2 resulted in generation of a mixture that includes both phenol and a previously reported dicopper(I) bridging phenyl complex, illustrating that both reduction of dicopper(II) to dicopper(I) and concomitant C–X bond formation are feasible.
Electronic Structures and Reactivity Profiles of Aryl Nitrenoid-Bridged Dicopper Complexes
Abstract not provided
Linking electronic structure calculations to generalized stacking fault energies in multicomponent alloys
Abstract The generalized stacking fault energy is a key ingredient to mesoscale models of dislocations. Here we develop an approach to quantify the dependence of generalized stacking fault energies on the degree of chemical disorder in multicomponent alloys. We introduce the notion of a “configurationally-resolved planar fault” (CRPF) energy and extend the cluster expansion method from alloy theory to express the CRPF as a function of chemical occupation variables of sites surrounding the fault. We apply the approach to explore the composition and temperature dependence of the unstable stacking fault energy (USF) in binary Mo–Nb alloys. First-principles calculations are used to parameterize a formation energy and CRPF cluster expansion. Monte Carlo simulations show that the distribution of USF energies is significantly affected by chemical composition and temperature. The formalism is broadly applicable to arbitrary crystal structures and alloy chemistries and will enable the development of rigorous models for deformation mechanisms in high-entropy alloys.
Achieving high tensile strength and ductility in refractory alloys by tuning electronic structure
The energy efficiency of heat engines (gas and steam turbines) for electricity production and propulsion is determined by the Carnot cycle and scales with operating temperature. Commercial nickel- and cobalt-based superalloys melt near 1,500 °C and rapidly lose mechanical strength beyond 1,000 °C. Refractory metals melt well above 2,000 °C but have inherent manufacturability challenges that are barriers to adoption, such as high ductile-to-brittle transition temperatures. Using density functional theory-guided design, we demonstrate tailored local lattice distortions that promote phase-stable, non-equiatomic refractory concentrated solid solutions with both high ductility and strength. Here, we exemplify this for single-phase, body-centred cubic Nb 4 Ta 4 V 3 Ti that exhibits castability, excellent room-temperature tensile yield strength (∼1 GPa) and ductility (approaching 20% uniform strain), and exceptional high-temperature tensile strength (500 MPa at 1,000 °C). These findings illustrate a path for designing materials that hold great potential for advancing next-generation technologies such as Generation IV fission reactors, first-generation fusion-plasma reactors, and more efficient gas turbines for electricity generation and propulsion.
Thermodynamics and electronic structure of adsorbed and intercalated plumbene in graphene/hexagonal SiC heterostructures
Abstract Graphene-covered hexagonal SiC substrates have been frequently discussed to be appropriate starting points for epitaxial overlayers of Xenes, such as plumbene, or even their deposition as intercalates between graphene and SiC. Here, we investigate, within density functional theory, the plumbene deposition for various layer orderings and substrate terminations. By means of total energy studies we demonstrate the favorization of the intercalation versus the epitaxy for both C-terminated and Si-terminated 4H-SiC substrates. These results are explained in terms of chemical bonding and by means of layer-resolved projected band structures. Our results are compared with available experimental findings.
Giant exchange splitting in the electronic structure of A-type 2D antiferromagnet CrSBr
Not Available
Generalizing deep learning electronic structure calculation to the plane-wave basis
Not provided.
Interfacial electronic structure of Cl6SubPc non-fullerene acceptors in organic photovoltaics using soft X-ray spectroscopies
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Synthesis and Electronic Structure of Anionic 1,1'-diphosphametallocenes of Chromium and Iron
In this work, we report two anionic diphosphametallocenates, [K(2.2.2-crypt)][M(PC 4 Me 4 ) 2 ] (M = Cr, 2-Cr ; Fe, 2-Fe ). Both are low-spin ( S = ½) by EPR spectroscopy and SQUID magnetometry. This contrasts the high-spin ( S = ) ferrocenate, [K(2.2.2-crypt)][Fe(C 5 H 2 -1,2,4- t Bu) 2 ] ( 4-Fe ). Quantum chemical calculations suggest this is due to significant differences in ligand field splitting of the d-orbitals which also explain structural features in the 2-M complexes.
The electronic structure of carbones revealed: insights from valence bond theory
Valence bond theory reveals the nature of the OC–C bond in carbon suboxide and related allene compounds.
Determining the coordination environment and electronic structure of polymer-encapsulated cobalt phthalocyanine under electrocatalytic CO 2 reduction conditions using in situ X-Ray absorption spectroscopy
In situ X-ray absorbance spectroscopy measurements show that encapsulating cobalt phthalocyanine within coordinating polymers leads to axial ligation of Co and results in enhanced rates for electrocatalytic CO 2 reduction.
Cerium( iv ) complexes with guanidinate ligands: intense colors and anomalous electronic structures
A series of cerium( iv ) mixed-ligand guanidinate-amide complexes, {[(Me 3 Si) 2 NC(N i Pr) 2 ] x Ce IV [N(SiMe 3 ) 2 ] 3− x }+ ( x = 0−3), was prepared by chemical oxidation and studied spectroscopically and computationally, revealing trends in 4f/5d orbital occupancies.
The electronic structure of FeV-cofactor in vanadium-dependent nitrogenase
Active site FeV-cofactor of the V-nitrogenase and the EPR spectrum of the reduced cofactor showing 51 V-hyperfine coupling.