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At least 613 records · Page 34

Origins of anisotropic transport in the electrically switchable antiferromagnet Fe 1/3 NbS 2

Recent experiments on the antiferromagnetic intercalated transition metal dichalcogenide Fe 1/3 NbS 2 have demonstrated reversible resistivity switching by application of orthogonal current pulses below its magnetic ordering temperature, making Fe 1/3 NbS 2 promising for spintronics applications. Here, we perform density functional theory calculations with Hubbard U corrections of the magnetic order, electronic structure, and transport properties of crystalline Fe 1/3 NbS 2 , clarifying the origin of the different resistance states. The two experimentally proposed antiferromagnetic ground states, corresponding to in-plane stripe and zigzag ordering, are computed to be nearly degenerate. In-plane cross sections of the calculated Fermi surfaces are anisotropic for both magnetic orderings, with the degree of anisotropy sensitive to the Hubbard U value. The in-plane resistance, computed within the Kubo linear response formalism using a constant relaxation time approximation, is also anisotropic, supporting a hypothesis that the current-induced resistance changes are due to a repopulating of antiferromagnetic domains. Our calculations indicate that the transport anisotropy of Fe 1/3 NbS 2 in the zigzag phase is reduced relative to stripe, consistent with the relative magnitudes of resistivity changes in experiment. Finally, our calculations reveal the likely directionality of the current-domain response, specifically, which domains are energetically stabilized for a given current direction.

36 MATERIALS SCIENCE↗

Pulse compression photoconductive semiconductor switches

A photoconductive switch that uses materials that support negative differential mobility, whose operation leverages the pulse compression of a charge could to generate the “on” time of the pulse in combination with the speed of light to generate the “off” time of the pulse, is described. In one example, a method of operating a photoconductive switch, which includes two electrodes and a light absorbing material positioned therebetween, includes selecting a value for one or more parameters comprising a voltage for generation of an electric field, a spot size of a laser pulse, a temporal pulse width of the laser pulse, or an intensity of the laser pulse, wherein the selected value(s) for the one or more parameters enable the switch to operate in a region where the light absorbing material exhibits negative differential mobility, and illuminating the light absorbing material with the laser pulse to generate a charge cloud within the light absorbing material.

Voss, Lars F.↗

Near‐Room‐Temperature Magnetoelectric Coupling via Spin Crossover in an Iron(II) Complex

Abstract Magnetoelectric coupling is achieved near room temperature in a spin crossover Fe II molecule‐based compound, [Fe(1bpp) 2 ](BF 4 ) 2 . Large atomic displacements resulting from Jahn–Teller distortions induce a change in the molecule dipole moment when switching between high‐spin and low‐spin states leading to a step‐wise change in the electric polarization and dielectric constant. For temperatures in the region of bistability, the changes in magnetic and electrical properties are induced with a remarkably low magnetic field of 3 T. This result represents a successful expansion of magnetoelectric spin crossovers towards ambient conditions. Moreover, the observed 0.3–0.4 mC m −2 changes in the H ‐induced electric polarization suggest that the high strength of the coupling obtained via this route is accessible not just at cryogenic temperatures but also near room temperature, a feature that is especially appealing in the light of practical applications.

Owczarek, Magdalena↗

Near‐Room‐Temperature Magnetoelectric Coupling via Spin Crossover in an Iron(II) Complex

Abstract Magnetoelectric coupling is achieved near room temperature in a spin crossover Fe II molecule‐based compound, [Fe(1bpp) 2 ](BF 4 ) 2 . Large atomic displacements resulting from Jahn–Teller distortions induce a change in the molecule dipole moment when switching between high‐spin and low‐spin states leading to a step‐wise change in the electric polarization and dielectric constant. For temperatures in the region of bistability, the changes in magnetic and electrical properties are induced with a remarkably low magnetic field of 3 T. This result represents a successful expansion of magnetoelectric spin crossovers towards ambient conditions. Moreover, the observed 0.3–0.4 mC m −2 changes in the H ‐induced electric polarization suggest that the high strength of the coupling obtained via this route is accessible not just at cryogenic temperatures but also near room temperature, a feature that is especially appealing in the light of practical applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Experimental demonstration of externally driven millimeter-wave particle accelerator structure

We report the experimental demonstration of a mm-wave electron accelerating structure powered by a high-power rf source. We demonstrate reliable coupling of an unprecedented rf power—up to 575kW into the mm-wave accelerator structure using a quasi-optical setup. This standing wave accelerating structure consists of a single-cell copper cavity and a Gaussian to TM 01 mode converter. The accelerator structure is powered by 110 GHz, 10-ns long rf pulses. These pulses are chopped from 3 microsecond pulses from a gyrotron oscillator using a laser-driven silicon switch. We show an unprecedented high gradient up to 230MV/m that corresponds to a peak surface electric field of more than 520 MV/m. We have achieved these results after conditioning the cavity with more than 100,000 pulses. We also report preliminary measurements of rf breakdown rates, which are important for understanding rf breakdown physics in the millimeter-wave regime. Furthermore, these results open up many frontiers for applications not only limited to the next generation particle accelerators but also x-ray generation, probing material dynamics, and nonlinear light-matter interactions at mm-wave frequency.

43 PARTICLE ACCELERATORS↗

Transmission Electron Microscopy Study on the Effect of Thermal and Electrical Stimuli on Ge2Te3 Based Memristor Devices

Memristor devices fabricated using the chalcogenide Ge 2 Te 3 phase change thin films in a metal-insulator-metal structure are characterized using thermal and electrical stimuli in this study. Once the thermal and electrical stimuli are applied, cross-sectional transmission electron microscopy (TEM) and X-ray energy-dispersive spectroscopy (XEDS) analyses are performed to determine structural and compositional changes in the devices. Electrical measurements on these devices showed a need for increasing compliance current between cycles to initiate switching from low resistance state (LRS) to high resistance state (HRS). The measured resistance in HRS also exhibited a steady decrease with increase in the compliance current. High resolution TEM studies on devices in HRS showed the presence of residual crystalline phase at the top-electrode/dielectric interface, which may explain the observed dependence on compliance current. XEDS study revealed diffusion related processes at dielectric-electrode interface characterized, by the separation of Ge 2 Te 3 into Ge- and Te- enriched interfacial layers. This was also accompanied by spikes in O level at these regions. Furthermore, in-situ heating experiments on as-grown thin films revealed a deleterious effect of Ti adhesive layer, wherein the in-diffusion of Ti leads to further degradation of the dielectric layer. This experimental physics-based study shows that the large HRS/LRS ratio below the current compliance limit of 1 mA and the ability to control the HRS and LRS by varying the compliance current are attractive for memristor and neuromorphic computing applications.

Shallcross, Austin↗

Low-EMI solid-state relay

Solid state relay electromagnetic interference (EMI) generated when switching ac power to load. Relay could find uses in circuits that are particularly susceptible to electrical noise or contain sensitive components.

Muska, W. D.↗

Description of real-time Ada software implementation of a power system monitor for the Space Station Freedom PMAD DC testbed

The authors describe the Ada language software developed to perform the electrical power system monitoring functions for the NASA Lewis Research Center's Power Management and Distribution (PMAD) DC testbed. The results of the effort to implement this monitor are presented. The PMAD DC testbed is a reduced-scale prototype of the electric power system to be used in Space Station Freedom. The power is controlled by smart switches known as power control components (or switchgear). The power control components are currently coordinated by five Compaq 386/20e computers connected through an 802.4 local area network. The power system monitor algorithm comprises several functions, including periodic data acquisition, data smoothing, system performance analysis, and status reporting. Data are collected from the switchgear sensors every 100 ms, then passed through a 2-Hz digital filter. System performance analysis includes power interruption and overcurrent detection. The system monitor required a hardware timer interrupt to activate the data acquisition function. The execution time of the code was optimized by using an assembly language routine. The routine allows direct vectoring of the processor to Ada language procedures that perform periodic control activities.

Ludwig, Kimberly↗

The Electromagnetic Compatibility (EMC) Design Challenge for Scientific Spacecraft Powered by a Stirling Power Converter

A 55 We free-piston Stirling Technology Demonstration Convertor (TDC) has been tested as part of an evaluation to determine its feasibility as a means for significantly reducing the amount of radioactive material required compared to Radioisotope Thermoelectric Generators (RTGs) to support long-term space science missions. Measurements were made to quantify the low frequency magnetic and electric fields radiated from the Stirling's 80 Hertz (Hz) linear alternator and control electronics in order to determine the magnitude of reduction that will be required to protect sensitive field sensors aboard some science missions. One identified "Solar Probe" mission requires a 100 dB reduction in the low frequency magnetic field over typical military standard design limits, to protect its plasma wave sensor. This paper discusses the electromagnetic interference (EMI) control options relative to the physical design impacts for this power system, composed of 3 basic electrical elements. They are (1) the Stirling Power Convertor with its linear alternator, (2) the power switching and control electronics to convert the 90 V, 80 Hz alternator output to DC for the use of the spacecraft, and (3) the interconnecting wiring including any instrumentation to monitor and control items 1 and 2.

Sargent, Noel B.↗

Silicon Carbide Solar Cells Investigated

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

Bailey, Sheila G.↗

Thin film memory matrix using amorphous and high resistive layers

Memory cells in a matrix are provided by a thin film of amorphous semiconductor material overlayed by a thin film of resistive material. An array of parallel conductors on one side perpendicular to an array of parallel conductors on the other side enable the amorphous semiconductor material to be switched in addressed areas to be switched from a high resistance state to a low resistance state with a predetermined level of electrical energy applied through selected conductors, and thereafter to be read out with a lower level of electrical energy. Each cell may be fabricated in the channel of an MIS field-effect transistor with a separate common gate over each section to enable the memory matrix to be selectively blanked in sections during storing or reading out of data. This allows for time sharing of addressing circuitry for storing and reading out data in a synaptic network, which may be under control of a microprocessor.

Thakoor, Anilkumar P.↗

Geophysical Characterization and Monitoring of the 200 Area Treated Effluent Disposal Facility to Support Permit Renewal; TEDF Geophysical Monitoring

The Treated Effluent Disposal Facility (TEDF), located in the 200 East Area of the Hanford Site, is a site where non-hazardous and non-radioactive liquid wastes are disposed into two state-permitted infiltration basins. In 2016, the Washington State Department of Ecology denied a permit renewal request for TEDF due to the inability to adequately assess the impact of TEDF discharge water on the underlying groundwater quality. TEDF overlies the relatively impermeable Ringold Lower Mud (RLM) unit, whose upper contact lies in the vadose zone approximately 30 m below ground surface and approximately 10 m above the water table boundary. The RLM is assumed to isolate TEDF discharge water from the natural groundwater aquifer, which is monitored using wellbores screened below the RLM. Therefore, samples collected from monitoring wells near TEDF are not considered representative of TEDF discharge water. Rather, TEDF discharge water is assumed to mound on top of the RLM to form a perched aquifer. To support permitting of the TEDF, a new monitoring well is required that can be used to sample water from the presumed perched water aquifer above the RLM. Ideally, the screened section of the well would be located at the peak of the perched water mound(s), which presumably occurs at the point of maximum vertical flux from TEDF to the RLM, or equivalently where the dominant infiltration flow paths reach the RLM. This report describes how time-lapse 3D electrical resistivity tomography (ERT) was used in conjunction with nominal TEDF discharge operations to image the dominant flow paths from each pond to the RLM. Results are summarized in Figure ES.1. Figure ES.1A shows a satellite image of the TEDF overlain by an array of surface ERT electrodes. The solid and dashed black circles denote the zones of maximum vertical flux at the RLM within the south and north ponds, respectively, and presumably the regions where perched water peaks during discharge. Figure ES.1B shows time-lapse difference imaging results approximately 15 days after switching discharge from the south pond to the north pond. Blue iso-surfaces beneath the north pond denote regions of increasing bulk electrical conductivity caused by increasing saturation due to infiltrating water. Red iso-surfaces beneath the south pond denote regions that were previously saturated during the south pond discharge and are now de-saturating, causing a decrease in bulk electrical conductivity. In both cases, the zones of maximum change mark the dominant flow paths to the RLM. Figure ES.1C shows time-lapse imaging results approximately 15 days after switching discharge from the north pond to the south pond. In this case, blue iso-surfaces mark the dominant flow paths to the RLM from the south pond. The red iso-surfaces mark the dominant flow paths that existed during discharge to the north pond. The regions of maximum change in bulk conductivity (due to saturation or desaturation) that mark the primary flow paths are equivalent in both cases and denoted by the dashed solid and black circles. If a perched water zone forms on the RLM, it is likely to mound within or near the dashed circle during discharge to the north pond, and in the solid circle during discharge to the south pond. In other words, if perched water mounding occurs, the circles mark the optimum locations suggested by the ERT imaging for monitoring boreholes to be placed, enabling samples to be collected that are representative of TEDF discharge impacts on groundwater quality.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

SiC-Based 5-kV Universal Modular Soft-Switching Solid-State Transformer (M-S4T) for Medium-Voltage DC Microgrids and Distribution Grids

Medium-voltage DC (MVDC) grids are attractive for electric aircraft and ship power systems, battery energy storage system (BESS), fast charging electric vehicle (EV), etc. Such EV or BESS applications need isolated bidirectional MVDC to LVDC or LVAC converters. However, the existing Si-based solutions cannot fulfill the requirements of a high-efficiency and robust converter for MVDC grids. This paper presents a 5 kV SiC-based universal modular solid-state transformer (SST). This universal current-source SST can interface either a LVAC or LVDC grid with a MVDC grid in single-stage power conversion, while the conventional dual active bridge (DAB) converter needs an additional inverter. The proposed SST module using 3.3 kV SiC MOSFETs and diodes is bidirectional and can serve as a building block in series or parallel for higher-voltage higher-power systems. The topology of each module is based on the soft-switching solid-state transformer (S4T) with reduced conduction loss, which features reduced EMI through controlled dv/dt, and high efficiency with full-range ZVS for main devices and ZCS for auxiliary devices. Operation principle of the modular S4T (M-S4T), capacitor voltage balancing control between the cascaded modules, design of components including a medium-voltage (MV) medium-frequency transformer (MFT) to realize a 50 kVA 5 kV DC to 600 V DC or 480 V AC M-S4T are presented. Importantly, the MV MFT prototype achieves very low leakage inductance (0.13%) and 15 kV insulation with coaxial cables and nanocrystalline cores. Here, the proposed universal modular SST is compared against the DAB solution and verified with DC-DC and DC-AC simulation and 4 kV experimental results. Significantly, the MV experimental results of a modular DC transformer with each module at MVDC are rarely covered in the literature and reported for the first time.

14 SOLAR ENERGY↗

Current‐Driven Switching of Néel Vector of an Antiferromagnetic Insulator Thin Film

Manipulation of antiferromagnetic (AFM) materials as active elements provides a crucial combination of electrical, thermal, and magnetic properties for spintronics. This study shows how the spin current generated in heavy metal is induced by spin‐orbit torque into an adjacent AFM insulator. The bulk unpinned spins of the AFM layer drive a spin current that is transmitted to the top ferromagnet. This mechanism allows the electrical control of the exchange bias, coercive field, and blocking temperature of the system. Further support is provided by a model calculation that quantitatively describes the effect of the spin current injection into the AFM.

antiferromagnetism↗

Air-bridge and Vertical CNT Switches for High Performance Switching Applications

Carbon nanotubes are attractive for switching applications since electrostatically-actuated CNT switches have low actuation voltages and power requirements, while allowing GHz switching speeds that stem from the inherently high elastic modulus and low mass of the CNT.Our first NEM structure, the air-bridge switch, consists of suspended single-walled nanotubes (SWNTs) that lie above a sputtered Nb base electrode, where contact to the CNTs is made using evaporated Au/Ti. Electrical measurements of these air-bridge devices show well-defined ON and OFF states as a dc bias of a few volts is applied between the CNT and the Nb-base electrode. The CNT air-bridge switches were measured to have switching times down to a few nanoseconds. Our second NEM structure, the vertical CNT switch, consists of nanotubes grown perpendicular to the substrate. Vertical multi-walled nanotubes (MWNTs) are grown directly on a heavily doped Si substrate, from 200 - 300 nm wide, approximately 1 micrometer deep nano-pockets, with Nb metal electrodes to result in the formation of a vertical single-pole-double-throw switch architecture.

nanoelectromechanical systems (NEMS) devices↗

Electrically controlled emission from singlet and triplet exciton species in atomically thin light-emitting diodes

We report electrically tunable spin singlet and triplet exciton emission from atomically aligned transition metal dichalcogenide (TMD) heterostructures. Furthermore, the observation of these states in both 0° and 60° heterostructures provides the stacking orientation degree of freedom for polarization switching in interlayer excitons. We confirm the spin configurations of the light-emitting excitons employing magnetic fields to measure effective exciton g factors. The interlayer tunneling current across the TMD heterostructure enables the electrical generation of singlet and triplet exciton emission in this atomically thin p-n junction. We demonstrate tunability between the singlet and triplet exciton photoluminescence via electrostatic gates and excitation power. By tuning the gates and interlayer bias voltage, the electroluminescence of the singlet and triplet can be switched with ratios of 10:1. Atomically thin TMD heterostructure light-emitting diodes thus enable a route for optoelectronic devices that can configure spin and valley quantum states independently.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗