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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 613 records · Page 34
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Colossal Nernst power factor in topological semimetal NbSb 2

Today solid-state cooling technologies below liquid nitrogen boiling temperature (77 K), crucial to quantum information technology and probing quantum state of matter, are greatly limited due to the lack of good thermoelectric and/or thermomagnetic materials. Here, we report the discovery of colossal Nernst power factor of 3800 × 10 -4 W m -1 K -2 under 5 T at 25 K and high Nernst figure-of-merit of 71 × 10 -4 K -1 under 5 T at 20 K in topological semimetal NbSb 2 single crystals. The observed high thermomagnetic performance is attributed to large Nernst thermopower and longitudinal electrical conductivity, and relatively low transverse thermal conductivity. The large and unsaturated Nernst thermopower is the result of the combination of highly desirable electronic structures of NbSb 2 having compensated high mobility electrons and holes near Fermi level and strong phonon-drag effect. This discovery opens an avenue for exploring material option for the solid-state heat pumping below liquid nitrogen temperature.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Universal behavior of the bosonic metallic ground state in a two-dimensional superconductor

Anomalous metallic behavior, marked by a saturating finite resistivity much lower than the Drude estimate, has been observed in a wide range of two-dimensional superconductors. Utilizing the electrostatically gated LaAlO 3 /SrTiO 3 interface as a versatile platform for superconductor-metal quantum phase transitions, we probe variations in the gate, magnetic field, and temperature to construct a phase diagram crossing from superconductor, anomalous metal, vortex liquid, to the Drude metal state, combining longitudinal and Hall resistivity measurements. We find that the anomalous metal phases induced by gating and magnetic field, although differing in symmetry, are connected in the phase diagram and exhibit similar magnetic field response approaching zero temperature. Namely, within a finite regime of the anomalous metal state, the longitudinal resistivity linearly depends on the field while the Hall resistivity diminishes, indicating an emergent particle-hole symmetry. The universal behavior highlights the uniqueness of the quantum bosonic metallic state, distinct from bosonic insulators and vortex liquids.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Doubling down on borophene electronics

The discovery of graphene, an atomic-thick carbon layer that can be exfoliated off a bulk graphite, has demonstrated various surprising properties and inspired a fervent quest for other new quasi-two-dimensional materials. Many analogues have been discovered, including borophene, silicene, germanene, stanene, phosphorene, arsenene, antimonene and bismuthine — one-atom-thick sheets of boron, silicon, germanium, tin, phosphorus, arsenic, antimony and bismuth, respectively. Borophene is a prototype for a synthetic two-dimensional (2D) material that does not have bulk layered counterparts. Furthermore, the growth of borophene often requires interfacial coupling with the metal substrate to stabilize its 2D form. Despite realizing rich polymorphs, the synthesized borophene is currently limited to only single atomic layers. Now, writing in Nature Materials, Xiaolong Liu and colleagues report the synthesis of double-layer (DL) borophene, which offers another degree of freedom to tune borophene structures and physical properties for electronic applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Enhanced ferroelectricity in ultrathin films grown directly on silicon

Ultrathin ferroelectric materials could potentially enable low-power logic and nonvolatile memories. As ferroelectric materials are made thinner, however, the ferroelectricity is usually suppressed. Size effects in ferroelectrics have been thoroughly investigated in perovskite oxides—the archetypal ferroelectric system. Perovskites, however, have so far proved unsuitable for thickness scaling and integration with modern semiconductor processes. In this paper we report ferroelectricity in ultrathin doped hafnium oxide (HfO 2 ), a fluorite-structure oxide grown by atomic layer deposition on silicon. We demonstrate the persistence of inversion symmetry breaking and spontaneous, switchable polarization down to a thickness of one nanometre. Our results indicate not only the absence of a ferroelectric critical thickness but also enhanced polar distortions as film thickness is reduced, unlike in perovskite ferroelectrics. This approach to enhancing ferroelectricity in ultrathin layers could provide a route towards polarization-driven memories and ferroelectric-based advanced transistors. This work shifts the search for the fundamental limits of ferroelectricity to simpler transition-metal oxide systems—that is, from perovskite-derived complex oxides to fluorite-structure binary oxides—in which ‘reverse’ size effects counterintuitively stabilize polar symmetry in the ultrathin regime.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Energy conversion and transport in molecular-scale junctions

Molecular-scale junctions (MSJs) have been considered the ideal testbed for probing physical and chemical processes at the molecular scale. Due to nanometric confinement, charge and energy transport in MSJs are governed by quantum mechanically dictated energy profiles, which can be tuned chemically or physically with atomic precision, offering rich possibilities beyond conventional semiconductor devices. While charge transport in MSJs has been extensively studied over the past two decades, understanding energy conversion and transport in MSJs has only become experimentally attainable in recent years. As demonstrated recently, by tuning the quantum interplay between the electrodes, the molecular core, and the contact interfaces, energy processes can be manipulated to achieve desired functionalities, opening new avenues for molecular electronics, energy harvesting, and sensing applications. This Review provides a comprehensive overview and critical analysis of various forms of energy conversion and transport processes in MSJs and their associated applications. We elaborate on energy-related processes mediated by the interaction between the core molecular structure in MSJs and different external stimuli, such as light, heat, electric field, magnetic field, force, and other environmental cues. Key topics covered include photovoltaics, electroluminescence, thermoelectricity, heat conduction, catalysis, spin-mediated phenomena, and vibrational effects. Furthermore, the review concludes with a discussion of existing challenges and future opportunities, aiming to facilitate in-depth future investigation of promising experimental platforms, molecular design principles, control strategies, and new application scenarios.

Charge transport↗
DOE OSTI2025

Low energy backgrounds and excess noise in a two-channel low-threshold calorimeter

Here, we describe observations of low energy excess (LEE) events, background events observed in all light dark matter direct detection calorimeters, and noise in a transition edge sensor based two-channel silicon athermal phonon detector with 375 meV baseline energy resolution. We measure two distinct LEE populations: “shared” multichannel events with a pulse shape consistent with substrate athermal phonon events and sub-eV events that couple nearly exclusively to a single channel with a significantly faster pulse shape. These “singles” are consistent with events occurring within the aluminum athermal phonon collection fins. Similarly, our measured detector noise is higher than the theoretical expectation. Measured noise can be split into an uncorrelated component, consistent with shot noise from small energy depositions within the athermal phonon sensor itself, and a correlated component, consistent with shot noise from energy depositions within the silicon substrate's phonon system.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Broadband optical modulation and control at millikelvin temperatures

A universal experimental challenge in studying radiation effects on cryogenic devices is precisely and accurately characterizing the position-dependent device response near the energy detection threshold. Here, we have developed a compact cryogenic optical beam steering system that can be used to generate O (μs) pulses of small numbers of photons over the energy range of 1.3–3.4 eV at room temperature, and deliver those photons via fiber optic to any specified location on the surface of a detector operating at cryogenic temperatures. This new system will allow for robust calibration of any photon-sensitive detector, including superconducting devices. The system can be used efficiently to explore the physics of target materials, quantify the position sensitivity of different sensor designs, measure phonon transport, and study the effects of quasiparticle poisoning on detector operation. We describe the design of this pulsed calibration method and present first results obtained with a second-generation system operated at room temperature and sub-Kelvin temperatures.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2024

Magnetic structure and magnetoelectric coupling in the antiferromagnet Co 5⁢ (Te⁢O 3 ) 4 ⁢Cl 2

The van der Waals (vdW) layered multiferroics, which host simultaneous ferroelectric and magnetic orders, have attracted attention not only for their potentials to be utilized in nanoelectric devices and spintronics, but also offer alternative opportunities for emergent physical phenomena. To date, the vdW layered multiferroic materials are still very rare. In this work, we have investigated the magnetic structure and magnetoelectric (ME) effects in Co 5 ⁢(Te⁢O 3 ) 4 ⁢Cl 2 , a promising multiferroic compound with antiferromagnetic (AFM) Néel point T N ~18 K. The neutron-powder diffraction reveals the noncoplanar AFM state with preferred Néel vector along the c axis, while a spin reorientation occurring between 8 and 15 K is identified, which results from the distinct temperature dependence of the nonequivalent Co site's moment in Co 5 ⁢(Te⁢O 3 ) 4 ⁢Cl 2 . Moreover, it is found that Co 5 ⁢(Te⁢O 3 ) 4 ⁢Cl 2 is one of the best vdW multiferroics studied so far in terms of the multiferroic performance. The measured linear ME coefficient exhibits the emergent oscillation dependence of the angle between magnetic field and electric field, and the maximal value is as big as 45 ps/m. Finally, it is suggested that Co 5 ⁢(Te⁢O 3 ) 4 ⁢Cl 2 is an appreciated platform for exploring the emergent multiferroicity in vdW layered compounds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Diagnosis of information scrambling from Hamiltonian evolution under decoherence

We apply a quantum teleportation protocol based on the Hayden-Preskill thought experiment to quantify how scrambling a given quantum evolution is. It has an advantage over the direct measurement of out-of time ordered correlators when used to diagnose the information scrambling in the presence of decoherence effects stemming from a noisy quantum device. We demonstrate the protocol by applying it to two physical systems: Ising spin chain and SU(2) lattice Yang-Mills theory. To this end, we numerically simulate the time evolution of the two theories in the Hamiltonian formalism. The lattice Yang-Mills theory is implemented with a suitable truncation of Hilbert space on the basis of the Kogut-Susskind formalism. On a two-leg ladder geometry and with the lowest nontrivial spin representations, it can be mapped to a spin chain, which we call Yang-Mills-Ising model and is also directly applicable to future digital quantum simulations. Here, we find that the Yang-Mills-Ising model shows the signal of information scrambling at late times.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Development of Quantum Interconnects (QuICs) for Next-Generation Information Technologies

Just as “classical” information technology rests on a foundation built of interconnected information-processing systems, quantum information technology (QIT) must do the same. A critical component of such systems is the “interconnect,” a device or process that allows transfer of information between disparate physical media, for example, semiconductor electronics, individual atoms, light pulses in optical fiber, or microwave fields. While interconnects have been well engineered for decades in the realm of classical information technology, quantum interconnects (QuICs) present special challenges, as they must allow the transfer of fragile quantum states between different physical parts or degrees of freedom of the system. The diversity of QIT platforms (superconducting, atomic, solid-state color center, optical, etc.) that will form a “quantum internet” poses additional challenges. As quantum systems scale to larger size, the quantum interconnect bottleneck is imminent, and is emerging as a grand challenge for QIT. For these reasons, it is the position of the community represented by participants of the NSF workshop on “Quantum Interconnects” that accelerating QuIC research is crucial for sustained development of a national quantum science and technology program. Given the diversity of QIT platforms, materials used, applications, and infrastructure required, a convergent research program including partnership between academia, industry, and national laboratories is required.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

( Invited ) Ruggedness of SiC and GaN Power Transistors in Switching Based Tests

Currently, a spectrum of reliability tests are being performed by both device manufacturers and end users. Many of these qualification tests are operated within the device safe-operating-area (SOA), however, the devices often undergo dynamic events in many converter applications that can exceed the SOA boundaries. This paper presents our recent work on quantifying the out-of-SOA robustness of GaN power high-electron-mobility transistors (HEMTs) and SiC power MOSFETs by switching based tests. The unclamped inductive switching stresses are applied to p-gate GaN HEMTs to evaluate their surge-energy and overvoltage robustness. The continuous, hard-switching, turn-off stresses are applied to SiC MOSFETs to evaluate their overvoltage switching robustness. As a result, both experiments demonstrate the robustness of SiC and GaN devices under out-of-SOA switching events, and the physics of degradation and failure are understood.

42 ENGINEERING↗
DOE OSTI2026

Magnonic spontaneous oscillation induced by parametric pumping

Spontaneous dynamic systems have attracted significant attention for their rich underlying physics such as phase-locking and synchronization. In this work, we report a new mechanism of generating magnetic spontaneous oscillation via parametric pumping. By applying a pump tone to excite propagating spin waves in a yttrium iron garnet delay line, four-wave mixing converts the pump mode into two phase-autonomous propagating magnon modes, i.e. a spontaneous mode with nearly twice the wavenumber of the pump mode and an idler mode with nearly zero wavenumber. This allows us to reliably generate ultrasharp spin wave dynamics with broad frequency tunability from the pump and magnetic field. We show that the spontaneous mode can be phase-locked to a probe tone, similar to an auto-oscillator. Furthermore, the spontaneous dynamics can be used to implement a high-gain magnonic parametric amplifier with a gain up to 40 dB. Our results open a new avenue for studying nonlinear magnonics and synchronization physics in propagating magnon geometry and for developing new magnonic devices.

Li, Yi↗
DOE OSTI2020

Determining the ballistic threshold velocity for a composite structure using multiple failure models

A composite structure, such as a laminated composite panel, for example, comprises one or more layers or “plies” embedded in a matrix material or otherwise fixed together in an arrangement, commonly referred to as a “stack up.” Each material in the structure has a corresponding material failure model (MFM) defining the physical characteristics of that material. A ballistic threshold velocity computing device obtains the MFMs for each material in the composite structure, generates a predicted ballistic velocity threshold velocity for each MFM, and then generates a parametric model to compute a composite ballistic velocity threshold velocity for the composite structure.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Companion Assisted Software Based Remote Attestation in SCADA Networks

Critical infrastructure such as power generation and water distribution systems have become a priority target in cyber warfare because of their recent computerization and introduction to the internet. As a result, Supervisory Control and Data Acquisition (SCADA) system security has become a hot topic in academic and industrial research. Among these topics, Remote Attestation is a security method intended to detect the presence of fileless malware in remote devices as they continue to operate. This allows for the detection of malware in the absence of long-term storage artifacts before symptoms of compromise begin to appear. In general, a trusted device (the verifier) makes a request for evidence of innocence from the untrusted device (the prover). In software-based schemes, the verifier can then measure the delay between its request and the prover’s response. If this delay is greater than the known computational time of the evidence gathering algorithm performed by the prover, then evidence may have been forged. Multi-hop networks often introduce too much network jitter to allow accurate measurement of prover response time, which limits the effectiveness of software based Remote Attestation in a real-world setting. In this work, we introduce a companion device that the verifier can trust to perform a subset of attestation, thereby removing any network jitter. This device is a Field Programmable Gate Array (FPGA) that is physically connected to the prover. We provide a communication protocol between the verifier, prover, and companion. To evaluate our scheme, we simulate it in a common SCADA network environment under normal and heavy traffic loads. Our simulations are performed in the discrete event network simulator NS-3, and we perform statistical analysis over our results to show that our scheme allows for tight timing constraints to be placed on the prover such that the verifier can more easily determine the validity of the evidence that it receives.

Johnson, William A.↗
DOE OSTI2022

Transforming Energy Through Computational Excellence: Bringing Low Mach Number Reactive Flow Simulations at the Exascale

PeleLMeX's unique capabilities are allowing for reactive flow modeling at unprecedented scales and a reasonable time and cost. The code is currently being extended to tackle more practical, design-oriented simulations by implementing Large Eddy Simulation and data-driven chemical models, providing a fast but accurate tool for engineers considering the emergence of GPU-accelerated platforms. These extensions are critical for enabling the physical insight required to design the next generation of combustion devices as a key component of a renewable energy future.

MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Laser-driven, ion-scale magnetospheres in laboratory plasmas. II. Particle-in-cell simulations

Ion-scale magnetospheres have been observed around comets, weakly magnetized asteroids, and localized regions on the Moon and provide a unique environment to study kinetic-scale plasma physics, in particular in the collision-less regime. In this work, we present the results of particle-in-cell simulations that replicate recent experiments on the large plasma device at the University of California, Los Angeles. Using high-repetition rate lasers, ion-scale magnetospheres were created to drive a plasma flow into a dipolar magnetic field embedded in a uniform background magnetic field. The simulations are employed to evolve idealized 2D configurations of the experiments, study highly resolved, volumetric datasets, and determine the magnetospheric structure, magnetopause location, and kinetic-scale structures of the plasma current distribution. We show the formation of a magnetic cavity and a magnetic compression in the magnetospheric region, and two main current structures in the dayside of the magnetic obstacle: the diamagnetic current, supported by the driver plasma flow, and the current associated with the magnetopause, supported by both the background and driver plasmas with some time-dependence. From multiple parameter scans, we show a reflection of the magnetic compression, bounded by the length of the driver plasma, and a higher separation of the main current structures for lower dipolar magnetic moments.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Self-assembled vertically aligned nanocomposite systems integrated on silicon substrate: Progress and future perspectives

Silicon (Si) integration is a critical step for implementing functional oxides into Si-based electronic devices, considering the advantages of low-cost and scalability of Si substrates. In the past decade, self-assembled vertically aligned nanocomposites (VANs) have attracted enormous research interest owing to their unique multifunctionalities and highly tunable physical properties as well as their one-step self-assembly process. Most of the VAN thin films have been reported to grow epitaxially on single crystalline oxide substrates, however, with limited systems reported on Si substrates due to the very large lattice mismatch between oxides and Si lattices. In this review, the current progress for self-assembled VAN systems integrated on a Si substrate is summarized. Buffer layered enabled VAN growth has been proven to be an effective approach for improving the epitaxial quality of oxide-oxide and oxide-metal VAN systems, while direct growth is preferred in nitride-metal VAN systems. Furthermore, the material versatility enables the Si-integrated VAN thin films to exhibit distinct physical properties such as ferromagnetism, ferroelectricity, magnetoresistance, as well as unique optical properties. The review also summarizes the various parameters for tuning the growth morphologies and corresponding properties for the VAN systems, including phase molar ratio, deposition frequency, buffer layers, background pressure, etc. Finally, future perspectives are discussed including new VAN system exploration, physical properties tuning, as well as design and fabrication of Si-based nanoelectronics and nanophotonic devices applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Room temperature depinning of the charge-density waves in quasi-two-dimensional 1T-TaS 2 devices

Here we report on the depinning of nearly commensurate charge-density waves in 1T-TaS 2 thin films at room temperature. A combination of the differential current–voltage measurements with the low-frequency noise spectroscopy provides unambiguous means for detecting the depinning threshold field in quasi-2D materials. The depinning process in 1T-TaS 2 is not accompanied by an observable abrupt increase in electric current—in striking contrast to depinning in the conventional charge-density-wave materials with quasi-1D crystal structure. We explained it by the fact that the current density from the charge-density waves in the 1T-TaS 2 devices is orders of magnitude smaller than the current density of the free carriers available in the discommensuration network surrounding the commensurate charge-density wave islands. The depinning fields in 1T-TaS 2 thin-film devices are several orders of magnitude larger than those in quasi-1D van der Waals materials. Obtained results are important for the proposed applications of the charge-density wave devices in electronics.

2D materials↗