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At least 613 records · Page 34

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DOE OSTI2023

Structure and Electronic Properties of Mesopores in Si PV Devices with PLEO Contacts

All current state-of-the-art silicon photovoltaic (PV) devices employ some flavor of passivating contact structure to minimize detrimental recombination while providing good conductivity. These properties are most often provided by a dielectric layer (SiNx, Al2O3, or SiOx) that is in contact with the crystalline silicon (c-Si) substrate. The effectiveness of these layers is heavily dependent on the nanoscale structure of both the dielectric layers and the crystalline silicon interface. As an example, the tunneling probability for charge carriers across thin SiOx layers, a process that is critical to maintain high conductivity, is extremely sensitive to the SiOx thickness. SiOx with a thickness below 2 nm readily allows charge carrier tunneling, whereas it is impeded for greater thicknesses. In the latter case it has been shown that modifications to the thermal processing schedule can induce disruptions, or pinholes, in thick SiOx layers that allow transport of charge carriers while maintaining excellent passivation. However, this requires higher temperatures processes that may inhibit widespread adoption by industry. Recently, another option has been presented that may circumvent the necessity for high temperature processing, namely metal assisted chemical etching (MACE). MACE relies on deposition of Ag nanoparticles onto the SiOx layers with subsequent electroless etching to form mesopores in the SiOx layers that are analogous to the pinholes created with high temperature processing. The size and density can be controlled based on the Ag nanoparticle deposition conditions. The resulting contact structure is known as polysilicon on locally etched oxide (PLEO) contacts. The nanoscale structure of the mesopores in PLEO contacts define the device level observables such as recombination current (Jo) and junction resistance. In this work we present atomic resolution transmission electron microscopy (TEM) analysis of mesopores in PLEO contacts formed with a different processing conditions to connect provide insight into how the nanoscale structure of the SiOx layer influences PV device properties. Additionally, we have previously used electron beam induced current (EBIC) to probe local transport properties in Si PV devices with a SiOx layer containing pinholes due to high temperature processing. Using EBIC we were able to directly show the enhance charge carrier transport through the pinholes. Here we also employ EBIC to study non-uniformities in charge carrier recombination and transport associated with mesopores in PLEO contacts and compare these results with our previous work on devices with pinholes in the SiOx formed through high temperature processes. The products of this work provide critical information that is required to both further optimize performance of Si PV devices with PLEO contact and to drive future adoption of this technology by industry.

ENGINEERING,SOLAR ENERGY↗

DOE OSTI2023

Robotic surgical devices, systems and related methods

Various medical devices and related systems, including robotic and/or in vivo medical devices, and various robotic surgical devices for in vivo medical procedures. Included herein, for example, is a robotic surgical system having a support beam positionable through an incision, and a robotic device having a device body, first and second rotating shoulder components coupled to the device body, and first and second robotic arms coupled to the first and second shoulder components, respectively.

Farritor, Shane↗

DOE OSTI2015

The Roles and Developments needed for Diagnostics in the ITER Fusion Device

Harnessing the power from Fusion on earth is an important and challenging task. Excellent work has been carried out in this area over the years with several demonstrations of the ability to produce power. Now, a new large device is being constructed in the south of France. This is called ITER. ITER is a large-scale scientific experiment that aims to demonstrate a possibility to produce commercial energy from fusion. This project is now well underway with the many teams working on the construction and completing various aspects of the design. This device will carry up to 15 MA of plasma current and produce about 500 MW of power, 400 MW approximately in high energy neutrons. The typical temperatures of the electrons inside this device are in the region of a few hundred million Kelvin. It is maintained using a magnetic field. This device is pushing several boundaries from those currently existing. As a result of this, several technologies need to be developed or extended. This is especially true for the systems or diagnostics that measure the performance and provide the control signals for this device. A diagnostic set will be installed on the ITER machine to provide the measurements necessary to control, evaluate and optimize plasma performance in ITER and to further the understanding of plasma physics. These include amongst others, measurements of the plasma shape, temperature, density, impurity concentration, and particle and energy confinement times. The system will comprise about 45 individual measuring systems drawn from the full range of modern plasma diagnostic techniques, including magnetics, lasers, X-rays, neutron cameras, impurity monitors, particle spectrometers, radiation bolometers, pressure and gas analysis, and optical fibres. These devices will have to be made to work in the new and challenging environment inside the vacuum vessel. These systems will have to cope with a range of phenomena that extend the current knowledge in the Fusion field. One amongst them is the parasitic effect of the neutrons on the while all the performing with great accuracy and precision. The levels of neutral particle flux, neutron flux and neutron fluence will be respectively about 5, 10 and 10,000 times higher than the harshest experienced in today's machines. The pulse length of the fusion reaction-or the amount of time the reaction is sustained-will be about 100 times longer. (authors)

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2023

Organic electroluminescent materials and devices

A compound of Formula X wherein ring A is absent, or present and selected from a 5-membered or 6-membered, carbocyclic or heterocyclic ring, which is optionally substituted; ring B is absent, or present and selected from a 5-membered or 6-membered, carbocyclic or heterocyclic ring, which is optionally substituted; and at least one of ring A or ring B is present, and the hash line represents ring A fused to ring N—W 1 —W 3 and ring B fused to ring N—W 4 —W 6 ; W 1 , W 2 , W 3 , W 4 , W 5 , and W 6 are independently selected from CR 1 or N; Z is selected from CR Z or N; and Y is selected from a group consisting of C(R 2 ) 2 , B(R 2 ) 2 , Al(R 2 ) 2 , Si(R 2 ) 2 , and Ge(R 2 ) 2 . An optoelectronic device selected from the group consisting of a photovoltaic device, a photodetector device, a photosensitive device, and an OLED, the optoelectronic device including an organic layer that comprises a compound of Formula X. A consumer product that includes the optoelectronic device.

Thompson, Mark E.↗

DOE OSTI2023

Solid-phase sampling device and methods for point-source sampling of polar organic analytes

Sampling devices for sampling an aqueous source (e.g., field testing of ground water) for multiple different analytes are described. Devices include a solid phase extraction component for retention of a wide variety of targeted analytes. Devices include analyte derivatization capability for improved extraction of targeted analytes. Thus, a single device can be utilized to examine a sample source for a wide variety of analytes. Devices also include an isotope dilution capability that can prevent error introduction to the sample analysis and can correct for sample loss and degradation from the point of sampling until analysis as well as correction for incomplete or poor derivatization reactions. The devices can be field-deployable and rechargeable.

Boggess, Andrew J.↗

DOE OSTI2023

Organic electroluminescent materials and devices

A compound of Formula X wherein ring A is absent, or present and selected from a 5-membered or 6-membered, carbocyclic or heterocyclic ring, which is optionally substituted; ring B is absent, or present and selected from a 5-membered or 6-membered, carbocyclic or heterocyclic ring, which is optionally substituted; and at least one of ring A or ring B is present, and the hash line represents ring A fused to ring N—W 1 —W 2 and ring B fused to ring N—W 3 —W 4 ; W 1 , W 2 , W 3 , W 4 , W 5 , and W 6 are independently selected from CR 1 or N; Z is selected from CR Z or N; and Y is selected from a group consisting of C(R 2 ) 2 , B(R 2 ) 2 , Al(R 2 ) 2 , Si(R 2 ) 2 , and Ge(R 2 ) 2 . An optoelectronic device selected from the group consisting of a photovoltaic device, a photodetector device, a photosensitive device, and an OLED, the optoelectronic device including an organic layer that comprises a compound of Formula X. A consumer product that includes the optoelectronic device.

Thompson, Mark E.↗

DOE OSTI2016

Analysis of Reverse Flow Restriction Device to Prevent Dryout Fuel Damage during BWR Instability

Boiling Water Reactors (BWRs) are subjected to instabilities due to thermal hydraulics feedback or coupled Neutronics-thermal hydraulics feedback. Feedback is affected by many reactor parameters that could destabilize the core such as distribution of pressure drop across the core, axial power shape, subcooling level at the core inlet, radial power peaking factor, reactivity coefficients, and others. There are three common modes of instability in BWRs: single channel instability, core-wide instability, and regional instability. Each instability mode could damage the fuel if the power oscillations are left without an intervention like reactor scram. However, the instability problem becomes more dangerous if the automatic reactor scram is lost, like in Anticipated Transient without Scram (ATWS) accidents. A reverse flow restriction device (RFRD) would mitigate this problem. Core simulation using TRACE/PARCS code has been used to examine the potential effect of restricting the flow in the downward direction on mitigation of the power and flow oscillations to increase the safety of BWRs. The presented results demonstrate the ability of the device on limiting flow oscillation amplitude in the one bundle where it is used, on an adjacent bundle without it and reducing the power peak when the flow is low and power is high during BWR power oscillations. This exercise demonstrates the potential of previously described hardware device on preventing clad temperature excursion to keep the fuel safe from dryout damage and provide encouraging results ahead of the planned more detailed investigation where the device is to be used in more bundles up to full core. In the future work it is planned to examine the effect of device installed in a fraction of the bundles on the flow rate in other bundles. Also, the effect on the characteristics of dryout and rewetting and the resulting temperature excursions with and without the device will be given special attention. (authors)

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗

DOE OSTI2024

InP- and GaAs-Based 0.6 eV GaInAs Devices for Thermophotovoltaics and Laser Power Conversion

Emerging applications such as thermal energy grid storage, waste heat recovery and portable power generation require efficient thermophotovoltaic (TPV) converters tuned to temperatures near 1000 Degrees Celsius or below. Metamorphic GaInAs with larger lattice constants than InP present a promising option for these needs. The ability to grow these devices on GaAs substrates instead of more expensive InP would enhance the scalability of these devices. In this talk, we present inverted metamorphic Ga0.3In0.7As photovoltaic converters with sub-0.60 eV bandgaps grown on InP and GaAs substrates. These devices are realized using InAsP or GaInP/InAsP compositionally graded buffers which exhibit threading dislocation densities of 1.3 +/- 0.6 x 106 cm-2 and 8.9 +/- 1.7 x 106 cm-2 on InP and GaAs, respectively. Despite this difference in defect density, the devices generate similar open-circuit voltages of 0.386 V and 0.383 V, respectively, under irradiance producing a short-circuit current density of -10 A/cm2, with bandgap-voltage offsets of 0.20 and 0.21 V. We estimate their thermophotovoltaic efficiency using these measurements coupled with broadband reflectance measurments. The InP-based cell is estimated to yield 1.09 W/cm2 at 1100 Degrees Celsius vs. 0.92 W/cm2 for the GaAs-based cell, with TPV efficiencies of 16.8 vs. 9.2%. Both devices are limited by sub-bandgap absorption, which we assess largely occurs in the graded buffers. We estimate that the 1100 Degrees Celsius thermophotovoltaic efficiencies would increase to 24.0% and 20.7% in structures with the graded buffer removed, if previously demonstrated reflectance is achieved. These devices also have application as laser power converters in the 2.0-2.3 um atmospheric window. We estimate efficiencies of 36.8% and 32.5% under 2.0 um monochromatic irradiance of 1.86 W/cm2 and 2.81 W/cm2, respectively.

ENGINEERING,MATERIALS SCIENCE,SOLAR ENERGY↗

DOE OSTI2024

Wide bandgap optical switch circuit breaker for controlling propagation of current therethrough a wide bandgap optical device

A high-voltage switch is adapted for use as a medium-voltage direct current circuit breaker, which provides a low-cost, small-footprint device to mitigate system faults. In one example, a method for operating a wideband optical device includes illuminating the wide bandgap optical device with a light within a first range of wavelengths and a first average intensity, allowing a current to propagate therethrough without substantial absorption of the current, illuminating the wide bandgap optical device with light within the first range of wavelengths and a second average intensity that is lower than the first average intensity to allow a sustained current flow though the wide bandgap optical device, and illuminating the wide bandgap optical device with light within a second range of wavelengths to stop or substantially restrict propagation of the current through the wide gap material.

Voss, Lars F.↗

DOE OSTI2026

Portable and Cost-Effective Device for Reliable Detection of Counterfeit and Non-compliant Refrigerants in Diverse Applications

Counterfeit refrigerants pose significant challenges to safety, system reliability, and operational effectiveness due to their harmful contaminants or incompatible chemical compositions. Utilizing these noncompliant products can lead to reduced efficiency, equipment failures, and expensive repairs. Additionally, heightened demand for alternative refrigerants during the industry's transition has created supply gaps, enabling counterfeit products to proliferate. Accurate detection and analysis tools are therefore essential to verify refrigerant authenticity and ensure system integrity in diverse applications. This paper presents the development of a portable device designed for reliable identification and detailed analysis of refrigerant composition. By integrating precision gas sampling, controlled pressure regulation, and automated sensor technology, the device not only detects deviations from standard refrigerant properties but also provides a comprehensive composition breakdown. Pre-calibrated sensors measure the refrigerant gas to identify specific concentrations and contaminants, with an intuitive LED-based indicator system ensuring quick interpretation of results. The user-friendly interface enables operators to select refrigerant types for targeted testing, further enhancing accuracy and usability for field technicians. Comprehensive testing was conducted on mildly flammable A2L refrigerants, showcasing the device’s robustness and adaptability in analyzing composition and detecting discrepancies. The device demonstrated consistent accuracy across a range of refrigerant samples, affirming its reliability in diverse operational environments. Its design minimizes contamination risks during sampling and provides detailed composition results within 90 seconds, ensuring efficient and precise analysis. With a projected price point under $150, the proposed solution delivers affordability alongside its lightweight portability and straightforward operation. Unlike complex and costly alternatives, such as gas chromatography systems, this device provides an accessible option for technicians, customs personnel, and industry operators in need of quick and effective refrigerant verification. Compatible with both current formulations and emerging refrigerant technologies, the device addresses critical counterfeit detection needs across a range of applications. By delivering accurate composition analysis and counterfeit identification, this innovation enhances system performance, safety, and operational reliability in crucial industries.

Cheekatamarla, Praveen [ORNL] (ORCID:0000000248827↗

DOE OSTI2015

Optically controlled multiple switching operations of DNA biopolymer devices

We present optically tunable operations of deoxyribonucleic acid (DNA) biopolymer devices, where a single high-resistance state, write-once read-many-times memory state, write-read-erase memory state, and single low-resistance state can be achieved by controlling UV irradiation time. The device is a simple sandwich structure with a spin-coated DNA biopolymer layer sandwiched by two electrodes. Upon irradiation, the electrical properties of the device are adjusted owing to a phototriggered synthesis of silver nanoparticles in DNA biopolymer, giving rise to multiple switching scenarios. This technique, distinct from the strategy of doping of pre-formed nanoparticles, enables a post-film fabrication process for achieving optically controlled memory device operations, which provides a more versatile platform to fabricate organic memory and optoelectronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2018

A Datasheet Driven Unified Si/SiC Compact IGBT Model for N-Channel and P-Channel Devices

This paper presents a unified physics-based insulated-gate bipolar transistor (IGBT) compact model for circuit simulation that predicts the performance of both Si and SiC, n- and p-channel devices. The model can predict the detailed switching waveforms of these technologies based on its charge-based formulation. Further, this compact IGBT model is presented alongside a unique datasheet-driven parameter extraction process. The parameter extraction process enables users to quickly extract model parameters from data typically published without the need of taking physical measurements. The model has been validated with both Si and SiC devices for static and dynamic characteristics. The SiC IGBTs used for validation are a 12.5-kV n-channel device and a 13-kV p-channel device, while the Si IGBT chosen was IXDH30N120 from IXYS Corp. (Milpitas, CA, USA). This is the only IGBT model that predicts the performance of both n- and p-channel, Si and SiC devices, providing more freedom for the development of complex power electronics circuit designs. The convergence of the model has been verified by implementing a complex circuit consisting of both a dc-dc converter and a dc-ac inverter. The results presented here show that the unified model can be used to describe the behavior of a wide range of Si and SiC IGBT circuits. This paper is accompanied by a Verilog-A source code and a power point file demonstrating the model parameter extraction sequence.

42 ENGINEERING↗

DOE OSTI2015

Scalable Heuristics for Planning, Placement and Sizing of Flexible AC Transmission System Devices

Aiming to relieve transmission grid congestion and improve or extend feasibility domain of the operations, we build optimization heuristics, generalizing standard AC Optimal Power Flow (OPF), for placement and sizing of Flexible Alternating Current Transmission System (FACTS) devices of the Series Compensation (SC) and Static VAR Compensation (SVC) type. One use of these devices is in resolving the case when the AC OPF solution does not exist because of congestion. Another application is developing a long-term investment strategy for placement and sizing of the SC and SVC devices to reduce operational cost and improve power system operation. SC and SVC devices are represented by modification of the transmission line inductances and reactive power nodal corrections respectively. We find one placement and sizing of FACTs devices for multiple scenarios and optimal settings for each scenario simultaneously. Our solution of the nonlinear and nonconvex generalized AC-OPF consists of building a convergent sequence of convex optimizations containing only linear constraints and shows good computational scaling to larger systems. The approach is illustrated on single- and multi-scenario examples of the Matpower case-30 model.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2019

Tunable Spin Characteristic Properties in Spin Valve Devices Based on Hybrid Organic–Inorganic Perovskites

The hybrid organic–inorganic perovskites (HOIPs) form a new class of semiconductors which show promising optoelectronic device applications. Remarkably, the optoelectronic properties of HOIP are tunable by changing the chemical components of their building blocks. Recently, the HOIP spintronic properties and their applications in spintronic devices have attracted substantial interest. Here the impact of the chemical component diversity in HOIPs on their spintronic properties is studied. Additionally, spin valve devices based on HOIPs with different organic cations and halogen atoms are fabricated. The spin diffusion length is obtained in the various HOIPs by measuring the giant magnetoresistance (GMR) response in spin valve devices with different perovskite interlayer thicknesses. In addition spin lifetime is also measured from the Hanle response. It is found that the spintronic properties of HOIPs are mainly determined by the halogen atoms, rather than the organic cations. The study provides a clear avenue for engineering spintronic devices based on HOIPs.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Energy use of residential safety, security, and health devices

Miscellaneous electrical loads (MELs) are responsible for a significant fraction of energy consumption in buildings. This paper addresses one category of MELs: Safety, Security, and Health Devices (SSHDs). Common SSHDs include: electrical life safety equipment, smoke alarms, radon mitigation fans, and home oxygen concentrators. The installation or use of these devices is dictated by building codes, health providers, insurance companies, and other entities—none of which would ordinarily consider energy efficiency a priority. For this project, the most important residential devices were explored in terms of their governing regulations, functions, technologies, and energy use. The power consumption of 41 life safety SSHDs were measured. Individual power consumption of life safety devices is very small but many are typically required in every home. Devices performing the same functions have wide ranges in power use. Opportunities for reducing SSHD energy use were investigated, the results are summarized, and recommendations are made for further actions that could be taken to reduce SSHD energy use. Finally, SSHDs identified in this paper are responsible for at least one percent of current U.S. residential electricity consumption, but that number will climb steadily as existing buildings are upgraded and new types of SSHDs appear.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

DOE OSTI2022

An implantable biomechanical energy harvester for animal monitoring devices

Insufficient service life and the resulting need for battery replacements have been a great challenge for implantable electronic devices. This is particularly true for animal tracking applications, because recapturing animals is often unlikely once they are released to the wild. To tackle this problem, we developed a biomechanical energy harvester that uses a Macro Fiber Composite™ (MFC) piezoelectric beam to harvest the mechanical energy from animals’ body bending movements as the power source for implantable and wearable devices. Prototypes of an underwater acoustic transmitter using this technology were subdermally implanted into juvenile white sturgeon and their energy harvesting performance was evaluated through the device’s transmissions. Additionally, the fish successfully recovered from the implantation surgery and freely swam inside a tank. The transmitter prototypes in the fish continually transmitted signals for a period up to 5 weeks. A benchtop test setup was also created to emulate the fish’s body bending, estimate the device’s energy harvesting performance in the live fish, and perform accelerated fatigue testing of the energy harvester by applying test parameters learned from a video study of the fish’s body movement and behavior characteristics. The gradual depolarization of the piezoelectric ceramic material in the MFC under cyclic mechanical loading was the main limiting factor for the life span of the energy harvester. Pathways for improvement are proposed to achieve long-term efficacy of powering implantable and wearable electronic devices.

42 ENGINEERING↗

DOE OSTI2024

Durability enhancement of all-solid-state electrochromic devices by adjusting the charge density ratio between electrochromic and counter electrode layers

Here, owing to an increase in global warming, smart-window devices based on charge-balanced electrochromic devices (ECDs), which exhibit high potential to increase the thermal efficiency of buildings, have gained prominence. However, studies on the fabrication and cycling stability of charge-balanced ECDs are scarce. In this study, WO 3 and NiO x films were deposited on indium-tin-oxide (ITO)-coated glass substrates by reactive direct-current magnetron sputtering, and the deposition time was varied to control the thickness and charge density of the thin films. Subsequently, the NiO x /ITO/glass and WO 3 /ITO/glass substrates were laminated with a Li-based polymeric electrolyte to fabricate all-solid-state ECDs comprising electrochromic (EC) and counter-electrode (CE) layers in charge-density ratios of 12.6, 6.4, 2.3, and 1.1. Changes in the electrochromic properties, device-layer microstructure, crystal structure, and elemental composition of the as-constructed ECDs before and after degradation were investigated to understand the influence of the charge-density ratio of the EC and CE layers on the long-term durability of ECDs. Increasing the charge-density ratio decreased the cycling stability of the device owing to changes in the microstructure and crystal structure of the NiO x layer in the microstructural deep-trap sites. Among all the ECDs, those comprising EC and CE layers with similar charge densities showed the most stable optical modulation and highest long-term durability. Finally, based on the aforementioned results, a degradation mechanism for charge-imbalanced all-solid-state ECDs was proposed. This study is expected to open new frontiers in designing optimal-performance electrochemical devices with a wide variety of potential applications.

14 SOLAR ENERGY↗

DOE OSTI2020

Spin Transport in Ferromagnet-InSb Nanowire Quantum Devices

Signatures of Majorana zero modes (MZMs), which are the building blocks for fault-tolerant topological quantum computing, have been observed in semiconductor nanowires (NW) with strong spin-orbital-interaction (SOI), such as InSb and InAs NWs with proximity-induced superconductivity. Realizing topological superconductivity and MZMs in this most widely-studied platform also requires eliminating spin degeneracy, which is realized by applying a magnetic field to induce a helical gap. Yet, the applied field can adversely impact the induced superconducting state in the NWs and also places geometric restrictions on the device, which can affect scaling of future MZM-based quantum registers. These challenges could be circumvented by integrating magnetic elements with the NWs. With this motivation, in this work we report the first experimental investigation of spin transport across InSb NWs, which are enabled by devices with ferromagnetic (FM) contacts. We determine signatures of spin polarization and spin-dependent transport in the quasi-one-dimensional ballistic regime. Moreover, we show that electrostatic gating tunes the observed magnetic signal and also reveals a transport regime where the device acts as a spin filter. These results open an avenue towards developing MZM devices in which spin degeneracy is lifted locally, without the need of an applied magnetic field. They further provide a path for realizing spin-based devices that leverage spin-orbital states in quantum wires.

1D ballistic spin transport↗