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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 613 records · Page 34
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Thin film interference optics for imaging the O II 834-A airglow

Normal incidence thin film interference mirrors and filters have been designed to image the O II 834-A airglow. It is shown that MgF2 is a useful spacer material for this wavelength region. The mirrors consist of thin layers of MgF2 in combination with other materials that are chosen to reflect efficiently in a narrow band centered at 834 A. Peak reflectance of 60 percent can be obtained with a passband 200 A wide. Al/MgF2/Si and Al/MgF2/SiC interference coatings have been designed to reflect 834 A and to absorb the intense H I 1216 A airglow. An In/MgF2/In interference filter is designed to transmit 834 A and attenuate 1216 A radiation. Interference photocathode coatings for rejecting 1216 A radiation are also discussed.

Seely, John F.↗
NASA NTRS1979

Transparent electrically conducting thin films for spacecraft temperature control applications

Thin transparent films of In2O3 or In2O3 + SnO2 prepared by evaporation or sputtering have been tested for use as surface layers for spacecraft temperature control coatings. The films are intended to prevent nonuniform electric charge buildup on the spacecraft exterior. Film thicknesses of 300 to 500 A were found to be optimal in terms of durability and minimum impact on the solar absorptance and the thermal emissivity of the underlayers. As a verification of their suitability for long-duration space missions, the films were subjected to simulated solar UV plus proton irradiation in a vacuum.

Hass, G.↗
NASA NTRS1972

Lower critical field measurements in NbN bulk and thin films.

Low-field magnetization measurements were made at 4.2 K on thin-film and bulk NbN samples by using a vibrating-sample Foner magnetometer with a 50-kG superconducting solenoid. Values of the lower and upper critical fields are calculated, using magnetization curves as the basis. The significance of the Pauli spin paramagnetism and spin-orbit scattering in these materials is discussed.

Mathur, M. P.↗
NASA NTRS1973

An improved thin-film gauge for shock-tube thermal studies.

An improved type of thin-film heat gauge has been developed and used to measure heat-transfer rates from a shock-heated plasma to the end wall of a shock tube. The gauge is a resistance thermometer consisting of a triple-layered sensor coated by a moderately thick film of SiO2. It was used to measure heat transfer from nonionized argon at temperatures of up to 16000 K. A marked increase in heat transfer at the onset of ionization near the wall indicates that the gauge can be used to obtain the contribution of free electrons to the thermal transport.

Willeke, K.↗
NASA NTRS1975

Ternary compound thin film solar cells

A group of ternary compound semiconductor (I-III-VI2) thin films for future applications in photovoltaic devices is proposed. The consideration of these materials (CuInSe2, CuInTe2 and especially CuInS2) for long range device development is emphasized. Much of the activity to date has been concerned with the growth and properties of CuInX2 films. X-ray and electron diffraction analyses, Hall mobility and coefficient, resistivity and carrier concentration variations with substrate and film temperature as well as grain size data have been determined. Both p- and n-type films of CuInS2 and CuInSe2 have been produced. Single and double source deposition techniques have been utilized. Some data have been recorded for annealed films.

Kazmerski, L. L.↗
NASA NTRS1975

Development of a thin film solid state gaseous HCl sensor

The selection of materials to develop a thin film HCl sensor is discussed. Data were primarily concerned with chemical and physical properties of the film and with electrical properties which exhibit and enhance electrical response when HCl is absorbed on the film surface. Techniques investigated for enhancing electrical response include changing conditions for growing films, adding impurities to the film, changing ambient light intensity, and altering the ambient temperature of the sensing element.

Source record↗
NASA NTRS1976

Physical properties of thin-film field emission cathodes with molybdenum cones

Field emission cathodes fabricated using thin-film techniques and electron beam microlithography are described, together with effects obtained by varying the fabrication parameters. The emission originates from the tip of molybdenum cones that are about 1.5 micron tall with a tip radius around 500 A. Such cathodes have been produced in closely packed arrays containing 100 and 5000 cones as well as singly. Maximum currents in the range 50-150 microamp per cone can be drawn. Life tests with the 100-cone arrays drawing 2 mA total emission (or 3 A per sq cm) have proceeded in excess of 7000 hr with about a 10% drop in emission current. Studies are presented of the emission characteristics and current fluctuation phenomena. It is tentatively concluded that the emission arises from only one or a few atomic sites on the cone tips.

Spindt, C. A.↗
NASA NTRS1985

A computer simulation of thin film nucleation and growth: The Volmer-Weber case

The computer simulation of thin film nucleation and growth, which was previously performed for the case of single monolayer, was modified to include multilayer growth via the Volmer-Weber mechanism. The simulation results show that: (1) the kinetics of multilayer film growth is nearly identical to that of monolayer growth; (2) when no reevaporation takes place, the cluster density resulting from multilayer growth is higher at high coverage than that resulting from monolayer growth; (3) when reevaporation does take place, the cluster density resulting from multilayer growth is nearly identical to that resulting from monolayer growth. This is not due, however, to similarity in microstructure.

Salik, J.↗
NASA NTRS1992

Magnetic flux relaxation in YBa2Cu3O(7-x) thin film: Thermal or athermal

The magnetic flux relaxation behavior of YBa2Cu3O(7-x) thin film on LaAlO3 for H parallel c was studied in the range of 4.2-40 k and 0.2-1.0 T. Both the normalized flux relaxation rate (S) and the net flux pinning energy (U) increase continuously from 1.3 x 10 exp -2 to 3.0 x 10 exp -2 and from 70-240 meV respectively, as the temperature (T) increases from 10 to 40 K. This behavior is consistent with the thermally activated flux motion model. At low temperatures, however, S is found to decrease much more slowly as compared with kT, in contradiction to the thermal activation model. This behavior is discussed in terms of the athermal quantum tunneling of flux lines. The magnetic field dependence of U, however, is not completely understood.

Vitta, Satish↗
NASA NTRS1991

Magnetic flux relaxation in YBa2Cu3)(7-x) thin film: Thermal or athermal

The magnetic flux relaxation behavior of YBa2Cu3O(7-x) thin film on LaAlO3 for H is parallel to c was studied in the range 4.2 - 40 K and 0.2 - 1.0 T. Both the normalized flux relaxation rate S and the net flux pinning energy U increase continuously from 1.3 x 10(exp -2) to 3.0 x 10(exp -2) and from 70 to 240 meV respectively, as the temperature T increases from 10 to 40 K. This behavior is consistent with the thermally activated flux motion model. At low temperatures, however, S is found to decrease much more slowly as compared with kT, in contradiction to the thermal activation model. This behavior is discussed in terms of the athermal quantum tunneling of flux lines. The magnetic field dependence of U, however, is not completely understood.

Vitta, Satish↗