Photonics meets excitonics: natural and artificial molecular aggregates
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In this study, we demonstrate intrinsic, linearly polarized lasing from single GaN nanowires using cross-sectional shape control. A two-step top-down fabrication approach was employed to create straight nanowires with controllable rectangular cross-sections. A clear lasing threshold of 444kW/cm 2 and a narrow spectral line width of 0.16 nm were observed under optical pumping at room temperature, indicating the onset of lasing. The polarization was along the short dimension (y-direction) of the nanowire due to the higher transverse confinement factors for y-polarized transverse modes resulting from the rectangular nanowire cross-section. The results show that cross-sectioned shape control can enable inherent control over the polarization of nanowire lasers without additional environment requirements, such as placement onto lossy substrates.
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The origin of holes in Mg-doped In x Ga 1-x N films is investigated using electron paramagnetic resonance (EPR) spectroscopy. Unlike in Mg-doped GaN, the number of Mg-related acceptors in films with x between 0.021 and 0.112 decreases as the hole density increases. The EPR results indicate that the previously suggested models involving isolated acceptors or band formation cannot adequately explain hole production in InGaN. Rather, additional features such as In-induced passivating centers must be introduced.
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