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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 613 records · Page 34
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Growth, evaluation and modeling of silicon-on-ceramic solar cells

The silicon-on-ceramic (SOC) process uses inexpensive ceramic substrates to provide supported growth of silicon from the melt. The conditions for unidirectional solidification, the grain structure and other properties are quite similar to those of EFG silicon ribbon. Solar cells with interdigital electrodes have demonstrated AMl conversion efficiencies (active area) of 7.8% without AR coatings and 10.1% efficiencies with an AR coating of SiO. Mathematical modeling of the series resistance of cells shows the feasibility of making electrical contact to the base layer of the cell through slots in the substrate. However, series resistance in the base layer sets an upper limit on slot spacing for efficient cell performance.

Zook, J. D.↗
NASA NTRS1978

The effects of copper and titanium on silicon solar cells

Copper-doped N/P silicon solar cells fabricated from the Czochralski grown single-crystal wafers were found to have good electrical characteristics, but the titanium-doped N/P silicon solar cells has considerably lower conversion efficiency. However, in the copper/titanium-doped solar cells, copper seems to mitigate the unfavorable effects of titanium. To explain this behavior, microstructural tests were performed on silicon wafers and solar cells doped with copper, titanium and copper/titanium. Dark forward and reverse I-V measurements were performed on the solar cells to correlate the microstructural defects with the p-n junction properties. It was found that copper precipitates were formed in the copper-doped and copper/titanium-doped wafers and cells. There was a significant voltage drop in the dark reverse I-V measurements of the titanium solar cells. Also, there were some electronically active defects in the depletion region of some titanium-doped cells. Reasons that lead to the above results are given in detail.

Salama, A. M.↗
NASA NTRS1978

Evaluations of candidate encapsulation designs and materials for low-cost silicon photovoltaic arrays

Three encapsulation designs for silicon photovoltaic arrays based on cells with silk-screened Ag metallization have been evaluated: transparent polymeric coatings over cells laminated between two films or sheets of polymeric materials; cells adhesively bonded to a glass cover with a polymer pottant and a glass or other substrate component. Silicone and acrylic coatings were assessed, together with acrylic sheet, 0.635 mm fiberglass-reinforced polyester sheet, 0.102 mm polycarbonate/acrylic dual-layer film, 0.127 mm fluorocarbon film, soda-lime glass, borosilicate glass, low-iron glass, and several adhesives. The encapsulation materials were characterized by light transmittance measurements, determination of moisture barrier properties and bond strengths, and by the performance of cells before and after encapsulation. Silicon and acrylic coatings provided inadequate protection. Acrylic and fluorocarbon films displayed good weatherability and acceptable optical transmittance. Borosilicate, low-iron and soda-lime-float glasses were found to be acceptable candidate encapsulants for most environments.

Gaines, G. B.↗
NASA NTRS1978

Epitaxial solar cells on low-cost silicon substrates

This work is directed toward a low-cost approach to the fabrication of silicon solar cells and combines the advantages and flexibility of the epitaxial technique with the use of potentially low-cost silicon substrates. Epitaxial graded base n/p/p+ solar cell structures were grown and evaluated on various forms of polycrystalline and metallurgical grade silicon as well as single crystal substrates. X-ray topographic techniques have shown improvements in the crystallographic quality of the layer grown on polycrystalline material.

Robinson, P. H.↗
NASA NTRS1979

The importance of surface recombination and energy-bandgap narrowing in p-n-junction silicon solar cells

Experimental data demonstrating the sensitivity of open-circuit voltage to front-surface conditions are presented for a variety of p-n-junction silicon solar cells. Analytical models accounting for the data are defined and supported by additional experiments. The models and the data imply that a) surface recombination significantly limits the open-circuit voltage (and the short-circuit current) of typical silicon cells, and b) energy-bandgap narrowing is important in the manifestation of these limitations. The models suggest modifications in both the structural design and the fabrication processing of the cells that would result in substantial improvements in cell performance. The benefits of one such modification - the addition of a thin thermal silicon-dioxide layer on the front surface - are indicated experimentally.

Fossum, J. G.↗
NASA NTRS1981

New pressure-sensitive silicone adhesive

Adhesive for high or low temperatures does not stretch severely under load. It is produced by combining intermediate-molecular-weight pressure sensitive adhesive which does not cure with silicone resin that cures with catalyst to rubbery tack-free state. Blend of silicone tackifier and cured rubbery silicone requires no solvents in either atmospheric or vacuum environments. Ratio of ingredients varies for different degrees of tack, creep resistance, and tensile strength.

Leiffer, J. L.↗
NASA NTRS1981

Back contacts for silicon-on-ceramic solar cells

Grooved substrate exposes back surface of photovoltaic cells, allowing dopant diffusion into surface and electrical contact. When substrate is coated successively with carbon and molten silicon, polycrystalline-silicon bridges form over grooves, but leave channels open. Best adhesion results when substrate grooves run perpendicular to direction of liquid-silicon layer and are closely spaced.

Schuller, T. L.↗
NASA NTRS1979

Silicon materials outlook study for 1980-1985 calendar years

The polycrystalline silicon industry was studied in relation to future market needs. Analysis of the data obtained indicates that there is a high probability of polycrystalline silicon shortage by the end of 1982 and a strong seller's market after 1981 which will foster price competition for available silicon.

Costogue, E.↗
NASA NTRS1979

Automated Array Assembly Task In-depth Study of Silicon Wafer Surface Texturizing

Several aspects of silicon wafer surface texturizing were studied. A low cost cleaning method that utilizes recycled Freon in an ultrasonic vapor degreaser to remove organic and inorganic contaminants from the surface of silicon wafers as received from silicon suppliers was investigated. The use of clean dry air and high throughout wafer batch drying techniques was shown to lower the cost of wafer drying. A two stage texturizing process was examined for suitability in large scale production. Also, an in-depth gettering study with the two stage texturizing process was performed for the enhancement of solar cell efficiency, minimization of current versus voltage curve dispersion, and improvement in process reproducibility. The 10% efficiency improvement goal was exceeded for the near term implementation of flat plate photovoltaic cost reduction.

Jones, G. T.↗
NASA NTRS1979

Silicone modified resins for graphite fiber laminates

The development of silicon modified resins for graphite fiber laminates which will prevent the dispersal of graphite fibers when the composites are burned is discussed. Eighty-five silicone modified resins were synthesized and evaluated including unsaturated polyesters, thermosetting methacrylates, epoxies, polyimides, and phenolics. Neat resins were judged in terms of Si content, homogeneity, hardness, Char formation, and thermal stability. Char formation was estimated by thermogravimetry to 1,000 C in air and in N2. Thermal stability was evaluated by isothermal weight loss measurements for 200 hrs in air at three temperatures. Four silicone modified epoxies were selected for evaluation in unidirectional filament wound graphite laminates. Neat samples of these resins had 1,000 C char residues of 25 to 50%. The highest flexural values measured for the laminates were a strength of 140 kpsi and a modulus of 10 Mpsi. The highest interlaminar shear strength was 5.3 kpsi.

Frost, L. W.↗
NASA NTRS1980

Method of mitigating titanium impurities effects in p-type silicon material for solar cells

Microstructural evaluation tests performed on Cu-doped, Ti-doped and Cu/Ti doped p-type silicon single crystal wafers, before and after the solar cell fabrication, and evaluation of both dark forward and reverse I-V characteristic records for the solar cells produced from the corresponding silicon wafers, show that Cu mitigates the unfavorable effects of Ti, and thus provides for higher conversion efficiency, thereby providing an economical way to reduce the deleterious effects of titanium, one of the impurities present in metallurgical grade silicon material.

Salama, A. M.↗
NASA NTRS1979

Silicon compounds in the Jupiter atmosphere

The formation of colored silicon compounds under nonequilibrium conditions is discussed with reference to the composition of the Jupiter atmosphere. It is shown that many of these reactions produce strongly colored intermediates that are relatively stable and similar in appearance to those observed on Jupiter. It is suggested that the silicon compounds could substantially contribute to the colors observed on Jupiter. The colored intermediates may be the result of relatively rapid amorphous silicon monoxide formation in vertical atmospheric currents in the region near the red spot and in the red spot itself.

Howland, G.↗
NASA NTRS1980

Microdistribution of oxygen in silicon

The microdistribution of oxygen in Czochralskii-grown, p-type silicon crystals was determined by using the SEM in the EBIC mode in conjunction with spreading resistance measurements. When the conductivity remained p-type, bands of contrast were observed in the EBIC image which corresponded to maxima in resistivity. When at the oxygen concentration maxima the oxygen donor concentration exceeded the p-type dopant concentration, an inversion of the conductivity occurred. It resulted in the formation of p-n junctions in a striated configuration and the local inversion of the EBIC image contrast. By heat-treating silicon at 1000 C prior to the activation of oxygen donors, some silicon-oxygen micro-precipitates were observed in the EBIC image within the striated oxygen concentration maxima.

Murgai, A.↗
NASA NTRS1979

Potential for improved silicon ribbon growth through thermal environment control

The Ribbon-to-Ribbon (RTR) process for growth of silicon ribbon is described. This process involves the fabrication of a microcrystalline ribbon of silicon and subsequent grain size enhancement through a laser recrystallization process. The microribbon is obtained from a Thermal Expansion Shear Separation (TESS) process which allows a CVD layer of silicon to be separated from a temporary molybdenum substrate. Efforts to achieve increased solar cell efficiencies and higher area production rates have been problematical. Furnaces, which are necessary for thermal stress control, have been shown to contribute contamination to substrates resulting in degraded efficiencies. Recent results with a new furnace design indicate efficiencies in excess of 9% will be routine. Limitations to area throughput arise due to fundamental linear velocity limitations and width limitations necessary to prevent the occurrence of thermal buckling. Calculations are reported which show the influence of thermal profile on buckling tendencies, and a proposed electron beam technique is considered which promises high throughput with minimal buckling.

Gurtler, R. W.↗
NASA NTRS1982

Gravity-Feed Growth of Silicon Ribbon

In inverted Stepanov apparatus, silicon is melted in vee-shaped crucible that has long narrow slot at bottom of vee. Molten silicon flows from slot at a rate controlled by fluid pressure. As it emerges, it cools and solidifies to form a continuous ribbon. To eliminate surface-tension effects, crucible walls are made of a material that liquid silicon does not wet.

Cullen, G. W.↗
NASA NTRS1982

Crucible Grows Wide Silicon Ribbon

Inexpensive manufacture of solar cells may require quality silicon ribbon crystals. One way to produce them is by growing wide dendritic webs, which can be very long and have high structural perfection. Dendrites grow from supercooled melt, so width of ribbon depends on how wide a region of supercooled molten silicon can be maintained in crucible. Elongated geometry of suscepter/crucible/lid assembly allows molten silicon to supercool over a wider region -- a necessary condition for the growth of wide dendritic crystal ribbon.

Seidensticker, R.↗
NASA NTRS1980

Phase 2 of the array automated assembly task for the low cost silicon solar array project

Studies were conducted on several fundamental aspects of electroless nickel/solder metallization for silicon solar cells. A process, which precedes the electroless nickel plating with several steps of palladium plating and heat treatment, was compared directly with single step electroless nickel plating. Work was directed toward answering specific questions concerning the effect of silicon surface oxide on nickel plating, effects of thermal stresses on the metallization, sintering of nickel plated on silicon, and effects of exposure to the plating solution on solar cell characteristics. The process was found to be extremely lengthy and cumbersome, and was also found to produce a product virtually identical to that produced by single step electroless nickel plating, as shown by adhesion tests and electrical characteristics of cells under illumination.

Petersen, R. C.↗
NASA NTRS1980

Development of a high efficiency thin silicon solar cell

Significant improvements in open-circuit voltage and conversion efficiency, even on relatively high bulk resistivity silicon, were achieved by using a screen-printed aluminum paste back surface field. A 4 sq cm 50 micron m thick cell was fabricated from textured 10 omega-cm silicon which had an open-circuit voltage of 595 mV and AMO conversion efficiency at 25 C of 14.3%. The best 4 sq cm 50 micron thick cell (2 omega-cm silicon) produced had an open-circuit voltage of 607 mV and an AMO conversion efficiency of 15%. Processing modifications are described which resulted in better front contact integrity and reduced breakage. These modifications were utilized in the thin cell pilot line to fabricate 4 sq cm cells with an average AMO conversion efficiency at 25 C of better than 12.5% and with lot yields as great as 51% of starts; a production rate of 10,000 cells per month was demonstrated. A pilot line was operated which produced large area (25 cm) ultra-thin cells with an average AMO conversion efficiency at 25 deg of better than 11.5% and a lot yield as high as 17%.

Storti, G.↗