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At least 613 records · Page 34

Effects of silicon on the oxidation, hot-corrosion, and mechanical behavior of two cast nickel-base superalloys

Cast specimens of nickel-base superalloys 713C and Mar-M200 with nominal additions of 0, 0.5, and 1 wt% Si were evaluated for oxidation and corrosion resistance, tensile and stress-rupture properties, microstructure, and phase relations. Results are compared with those of an earlier study of the effects of Si in B-1900. Si had similar effects on all three superalloys. It improves oxidation resistance but the improvement in 713C and Mar-M200 was considerably less than in B-1900. Hot-corrosion resistance is also improved somewhat. Si is, however, detrimental to mechanical properties, in particular, rupture strength and tensile ductility. Si has two obvious microstructural effects. It increases the amount of gamma-prime precipitated in eutectic nodules and promotes a Mo(Ni,Si)2 Laves phase in the alloys containing Mo. These microstructural effects do not appear responsible for the degradation of mechanical properties, however.

Miner, R. V., Jr.↗

Solar C III line intensity ratios observed from Skylab

Solar observations of C III line intensity ratios are analyzed which were obtained by the Naval Research Laboratory extreme-ultraviolet slit spectrograph on Skylab from quiet and active regions, coronal holes, prominences, and a flare. Electron densities are determined by comparing the observed intensity ratios to their theoretical variation as a function of electron density and temperature. Both isothermal line ratios that are evaluated at a characteristic emitting temperature and ratios that are integrated through the temperature and density structure of a model solar atmosphere are calculated. The density-sensitive ratios R(Si IV 1402/C III 1908) and R(Si III 1892/C III 1908) are also used to derive additional values of electron density. It is found that the ratios R(C III 1247/C III 1908), R(Si IV 1402/C III 1908), and R(Si III 1892/C III 1908) give consistent values of electron density for each feature. The C III 1908-A, Si III 1892-A, and Si IV 1402-A lines have recently been observed from the IUE satellite in spectra of late-type stars, and can serve as practical density diagnostics that are independent of assumptions about the stellar surface gravity.

Cook, J. W.↗

High-resolution observations of the isotopic composition of carbon and silicon in the galactic cosmic rays

High resolution satellite observations of the galactic cosmic rays (approximately 100-300 MeV/amu) have yielded determinations of near-earth isotopic compositions, which are presented: (C-13)/(C-12) = 0.070 + or - 0.006; (Si-29)/(Si-28) = 0.109(+0.024, -0.014); and (Si-30)/(Si-28) = 0.084(+0.020, -0.014). Using a standard propagation model, source values greater than solar are derived for each of these ratios. The (C-13) excess may be the result of cross section uncertainties, but the (Si-29) and (Si-30) appear to reflect real differences between the galactic cosmic-ray source and the solar system.

Wiedenbeck, M. E.↗

Nitridation of silicon

Silicon powders with three levels of impurities, principally Fe, were sintered in He or H2. Non-densifying mechanisms of material transport were dominant in all cases. High purity Si showed coarsening in He while particle growth was suppressed in H2. Lower purity powder coarsened in both He and H2. The same three Si powders and Si /111/ single crystal wafers were nitrided in both N2 and N2/H2 atmospheres. Hydrogen increased the degree of nitridation of all three powders and the alpha/beta ratio of the lower purity powder. Some Si3N4 whiskers and open channels through the surface nitride layer were observed in the presence of Fe, correlating with the nitridation-enhancing effects of Fe. Thermodynamic calculations showed that when SiO2 is present on the Si, addition of H2 to the nitriding atmosphere decreases the amount of SiO2 and increases the partial pressure of Si-containing vapor species, that is, Si and SiO. Large amounts of NH3 and SiH4 were also predicted to form.

Shaw, N. J.↗

Stellar winds and mass-loss rates from Be stars

An analysis for the effects of stellar winds concerning Copernicus scans of Si III and Si IV resonance lines in the spectra of 22 early B stars, of which 19 have Be characteristics, yields line asymmetries in all but one of the stars to which theoretical profiles were fitted. The resulting wind parameters were used to calculate mass-loss rates. Most of the silicon in the winds of the cooler stars is in the form of Si III and Si IV, leading to a mass loss rate value ranging from 10 to the -11th to 3 x 10 to the -9th solar masses/year. Equatorial gravity darkening is seen in the relative velocity widths of ultraviolet and visible photospheric lines. The measured photospheric Si III and Si IV resonance-line equivalent widths do not agree with those predicted by current stellar atmosphere calculations. Be star mass loss rates are probably insufficient to affect either their own evolution or that of the galaxy, since their winds do not significantly contribute to the enrichment of the interstellar medium.

Snow, T. P., Jr.↗

Thermodynamics of silicon nitridation - Effect of hydrogen

Equilibrium compositions for the nitridization of Si were calculated to detect the effectiveness of H2 in removal of the oxide film and in increasing the concentration of SiO and reducing the proportions of O2. Gibbs free energy for the formation of SiN2O was computed above 1685 K, and at lower temperatures. The thermodynamic properties of SiN2O2 were then considered from 1000-3000 K, taking into account the known thermodynamic data for 39 molecular combinations of the Si, Ni, and O. The gases formed were assumed ideal mixtures with pure phase condensed species. The mole fractions were obtained for a system of SiO2 with each Si particle covered with a thin layer of SiO2 before nitridation, and a system in which the nitriding atmosphere had access to the Si. The presence of H2 was determined to enhance the removal of NiO2 in the first system, decrease the partial pressure of O2, increase the partial pressures of SiO, Si, H2O, NH3, and SiH4, while its effects were negligible in the Si system.

Shaw, N. J.↗

Current understanding of point defects and diffusion processes in silicon

The effects of oxidation of Si which established that vacancies (V) and Si self interstitials (I) coexist in Si at high temperatures under thermal equilibrium and oxidizing conditions are discussed. Some essential points associated with Au diffusion in Si are then discussed. Analysis of Au diffusion results allowed a determination of the I component and an estimate of the V component of the Si self diffusion coefficient. A discussion of theories on high concentration P diffusion into Si is then presented. Although presently there still is no theory that is completely satisfactory, significant progresses are recently made in treating some essential aspects of this subject.

Tan, T. Y.↗

Accelerated stress testing of amorphous silicon solar cells

A technique for performing accelerated stress tests of large-area thin a-Si solar cells is presented. A computer-controlled short-interval test system employing low-cost ac-powered ELH illumination and a simulated a-Si reference cell (seven individually bandpass-filtered zero-biased crystalline PIN photodiodes) calibrated to the response of an a-Si control cell is described and illustrated with flow diagrams, drawings, and graphs. Preliminary results indicate that while most tests of a program developed for c-Si cells are applicable to a-Si cells, spurious degradation may appear in a-Si cells tested at temperatures above 130 C.

Stoddard, W. G.↗

Hot-spot durability testing of amorphous cells and modules

This paper discusses the results of a study to determine the hot-spot susceptibility of amorphous-silicon (a-Si) cells and modules, and to provide guidelines for reducing that susceptibility. Amorphous-Si cells are shown to have hot-spot susceptibility levels similar to crystalline-silicon (C-Si) cells. This premise leads to the fact that the same general guidelines must apply to protecting a-Si cells from hot-spot stressing that apply to C-Si cells. Recommendations are made on ways of reducing a-Si module hot-spot susceptibility including the traditional method of using bypass diodes and a new method unique to thin-film cells, limiting the string current by limiting cell area.

Gonzalez, Charles↗

Surface contamination on LDEF exposed materials

X-ray photoelectron spectroscopy (XPS) has been used to study the surface composition and chemistry of Long Duration Exposure Facility (LDEF) exposed materials including silvered Teflon (Ag/FEP), Kapton, S13GLO paint, quartz crystal monitors (QCM's), carbon fiber/organic matrix composites, and carbon fiber/Al Alloy composites. In each set of samples, silicones were the major contributors to the molecular film accumulated on the LDEF exposed surfaces. All surfaces analyzed have been contaminated with Si, O, and C; most have low levels (less than 1 atom percent) of N, S, and F. Occasionally observed contaminants included Cl, Na, K, P, and various metals. Orange/brown discoloration observed near vent slots in some Ag/FEP blankets were higher in carbon, sulfur, and nitrogen relative to other contamination types. The source of contamination has not been identified, but amine/amide functionalities were detected. It is probable that this same source of contamination account for the low levels of sulfur and nitrogen observed on most LDEF exposed surfaces. XPS, which probes 50 to 100 A in depth, detected the major sample components underneath the contaminant film in every analysis. This probably indicates that the contaminant overlayer is patchy, with significant areas covered by less that 100 A of molecular film. Energy dispersive x-ray spectroscopy (EDS) of LDEF exposed surfaces during secondary electron microscopy (SEM) of the samples confirmed contamination of the surfaces with Si and O. In general, particulates were not observed to develop from the contaminant overlayer on the exposed LDEF material surfaces. However, many SiO2 submicron particles were seen on a masked edge of an Ag/FEP blanket. In some cases such as the carbon fiber/organic matrix composites, interpretation of the contamination data was hindered by the lack of good laboratory controls. Examination of laboratory controls for the carbon fiber/Al alloy composites showed that preflight contamination was the most significant factor for all the contaminants generally detected at less than 1 atom percent, or detected only occasionally (i.e., all but Si, O, and C). Flight control surfaces, including sample backsides not exposed to space radiation or atomic oxygen flux, have accumulated some contamination on flight (compared to laboratory controls), but experimentally, the LDEF exposed surface contamination levels are generally higher for the contaminants Si and O. For most materials analyzed, Si contamination levels were higher on the leading edge surfaces than on the trailing edge surfaces. This was true even for the composite samples where considerable atomic oxygen erosion of the leading edge surfaces was observed by SEM. It is probable that the return flux associated with atmospheric backscatter resulted in enhanced deposition of silicones and other contaminants on the leading edge flight surfaces relative to the trailing edge. Although the Si concentration data suggested greater on-flight deposition of contaminants on the leading edge surfaces, the XPS analyses did not conclusively show different relative total thicknesses of flight deposited contamination for leading and trailing edge surfaces. It is possible that atomic oxygen reactions on the leading edge resulted in greater volatilization of the carbon component of the deposited silicones, effectively 'thinning' the leading edge deposited overlayer. Unlike other materials, exposed polymers such as Kapton and FEP-type Teflon had very low contamination on the leading edge surfaces. SEM evidence showed that undercutting of the contaminant overlayer and damaged polymer layers occurred during atomic oxygen erosion, which would enhance loss of material from the exposed surface.

Hemminger, Carol S.↗

Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

George, T.↗

Gas kinematics and ionization along the extended sight line to HD 116852

We present Goddard High-Resolution Spectrograph intermediate observations of the interstellar medium toward HD 116852, a low halo star at a distance of 4.8 kpc (z = -1.3 kpc) in the direction l = 304. deg 9, b = 16.deg 1. The small science aperture observations have signal-to-noise ratios ranging from 30 to 90 and resolutions of 11 to 18 km/s (FWHM). We confirm the optical MK classification of this star through an analysis of its ultraviolet photosperic and stellar wind profiles. We detect interstellar lines of Al III, Si IV, C IV, and N V together with lines of C I, C I*, C I**, Si II, Ge II, P II, and Ni II. We convert the Mg II, P II, S II, Al III, Si IV, C IV, and N V profiles into measure of apparent column density as a function of LSR velocity. Gas scale height, velocity dispersion, and differential Galactic rotation effects govern the profile shapes. A simple computer model of the expected sight line column density profiles for the low and high ion species indicates that the gas velocity dispersions and scale heights increase as the ionization level of the gas increases. We find scale heigts H greater than or = 1 kpc for the high ions, which are comparable to the z-distance of the star, whereas we find H approximatley = 0.6 to 0.7 kpc for A1 III and H approximatley 0.1 kpc for P II and Ge II. An enhancement in the Al II profile near -15 km/s accounts for approximately 25% of the A1 III column along the sight line and probably arises within gas located approximately 500 pc below the Sagittarius-Carina spiral arm link. Portions of the broad underlying A1 III distribution are associated with the higher ionization lines, perhaps in conductive interfaces. The presence of N V and the column density ratios of Si IV, C IV, and N V favor the interpretation that much of the high ion absorption is produced by collisional ionization in gas with T = 1-3 x 10(exp 5) K. An enhancement near -35 km/s in both the Si IV and C IV profiles may be due to an outflow from the Norma spiral arm at a z-distance of about -1 kpc. The smooth decrease of the N(C IV)/N(Si IV) ratio at negative velocities may be due to an ISM ionization structure for hot gas that changes distance from the Galactic plane or to a two phase gas distribution in which the relative contribution from each phase changes with distance from the Galactic plane.

Sembach, Kenneth R.↗

A new titanium-bearing calcium aluminosilicate phase. 2: Crystallography and crystal chemistry of grains formed in slowly cooled melts with bulk compositions of calcium-aluminium-rich inclusions

The crystallography and crystal chemistry of a new calcium- titanium-aluminosilicate mineral (UNK) observed in synthetic analogs to calcium-aluminum-rich inclusions (CAIs) from carbonaceous chondrites was studied by electron diffraction techniques. The unit cell is primitive hexagonal or trigonal, with a = 0.790 +/- 0.02 nm and c = 0.492 +/- 0.002 nm, similar to the lattice parameters of melilite and consistent with cell dimensions for crystals in a mixer furnace slag described by Barber and Agrell (1994). The phase frequently displays an epitactic relationship in which melilite acts as the host, with (0001)(sub UNK) parallel (001)(sub mel) and zone axis group 1 0 -1 0(sub UNK) parallel zone axis group 1 0 0(sub mel). If one of the two space groups determined by Barber and Agrell (1994) for their sample of UNK is applicable (P3m1 or P31m), then the structure is probably characterized by puckered sheets of octahedra and tetrahedra perpendicular to the c-axis with successive sheets coordinated by planar arrays of Ca. In this likely structure, each unit cell contains three Ca sites located in mirror planes, one octahedrally coordinated cation located along a three-fold axis and five tetrahedrally coordinated cations, three in mirrors and two along triads. The octahedron contains Ti but, because there are 1.3-1.9 cations of Ti/formula unit, some of the Ti must also be in tetrahedral coordination, an unusual but not unprecedented situation for a silicate. Tetrahedral sites in mirror planes would contain mostly Si, with lesser amounts of Al while those along the triads correspondingly contain mostly Al with subordinate Ti. The structural formula, therefore, can be expressed as Ca(sub 3)(sup VIII)(Ti,Al)(sup VI)(Al,Ti,Si)(sub 2)(sup IV)(Si,Al)(sub 3)(sup IV)O14 with Si + Ti = 4. Compositions of meteoritic and synthetic Ti-bearing samples of the phase can be described in terms of a binary solid solution between the end-members Ca3TiAl2Si3O14 and Ca3Ti(AlTi)(AlSi2)O14. A Ti-free analog with a formula of Ca3Al2Si4O14 synthesized by Paque et al. (1994) is thought to be related structurally but with the octahedral site being occupied by Al, that is, Ca(sub 3)(sup VIII)Al(sup VI)(Al,Si)(sub 2)(sup IV)(Si)(sub 3)(sup IV)O14.

Barber, David J.↗

The transition regions of Capella

We have used the Goddard High Resolution Spectrometer (GHRS) to observe the spectoscopic binary system Capella (G8 III + G1 III). Exposures with the G140L, G140M, G160M, G200M, and echelle gratings provide emission line profiles with unprecedented signal-to-noise and spectral resolving power (lambda/Delta-lambda) up to 92,000. Multi-Gaussin fits to the line profiles show that the hotter star contributes 60%-70% of the total flux in the chromospheric O I and Mg II resonance lines, but about 90% of the flux in the Si III, Si IV, and C IV lines formed in the transition region at T less than or = 10(exp 5) K. We find clear evidence that the emission lines from the hotter star are systemtically redshifted relative to the photosphere with Doppler shifts of 5 +/- 1 km/s for the +9 +/- 3 km/s in the chromospheric Mg II and O I lines, respectively, increasing to +24 +/- 5 km/s for the transition region Si IV 1393.8A line. The multi-Gaussian fits to permitted transition region lines of SI III, Si IV, C IV, and N V indicate the presence of three components: moderately broad lines formed in the transition region of the hotter star (component H), narrow lines formed in the transition region of the cooler star (component C), and very broad lines that we think are formed in microflares on the hotter star (component B). The He II 1640.4 A feature has an broad profile, which indicates that it is formed by collisional excitation primarily from the hotter star, and a weak narrow component that we interpret as due to radiative recombination on the cooler star. We observed spin-forbidden emission lines of C III), O III), Si III), O IV), O V), and S IV) that are sensitive to electron density. Fainter members of the O IV) multiplet and all of the S IV) lines have never before been seen in any star than the Sun. We determine electron densities in the transition regions of the Capella stars using lines ratios of O IV) lines and emission measure analysis. The emission measures are self-consistent only when the fluxes from each emitting component are considered separately. In particular, the transition region abundance distributions appear to be different on the two stars, and the spin-forbidden lines were not detected in the B component. The emission measures for component H (the G1 star) are consistent with a constant electron pressure (or hydrostatic equilibrium) transition region with P(sub e) = 10(exp 15 + 0.1)/cu cm K and possibly solar 'coronal' abundances.

Linsky, Jeffrey L.↗

Manifestations of Dynamic Strain Aging in Soft-Oriented NiAl Single Crystals

The tensile and compressive properties of six NiAl-base single-crystal alloys have been investigated at temperatures between 77 and 1200 K. The normalized critical resolved shear stresses (CRSS/E) and work-hardening rates (Theta/E) for these alloys generally decreased with increasing temperature. However, anomalous peaks or plateaus for these properties were observed in conventional purity (CPNiAl), Si-doped (NiAl-Si), C-doped low Si (UF-NiAl1), and Mo-doped (NiAl-Mo) alloys at intermediate temperatures (600 to 1000 K). This anomalous behavior was not observed in high-purity, low interstitial material (HP-NiAl). Low or negative strain-rate sensitivities (SRS) also were observed in all six alloys in this intermediate temperature range. Coincident with the occurrence of negative strain-rate sensitivities was the observation of serrated stress-strain curves in the CPNiAl and NiAl-Si alloys. These phenomena have been attributed to dynamic strain aging (DSA). Chemical analysis of the alloys used in this study suggests that the main specie responsible for strain aging in NiAl is C but indicate that residual Si impurities can enhance the strain aging effects. The corresponding dislocation microstructures at low temperatures (300 to 600 K) were composed of well-defined cells. At intermediate temperatures (600 to 900 K), either poorly defined cells or coarse bands of localized slip, reminiscent of the vein structures observed in low-cycle fatigue specimens deformed in the DSA regime, were observed in conventional purity, Si-doped, and in Mo-doped alloys. In contrast, a well-defined cell structure persisted in the low interstitial, high-purity alloy. At elevated temperatures (greater than or equal to 1000 K), more uniformly distributed dislocations and sub-boundaries were observed in all alloys. These observations are consistent with the occurrence of DSA in NiAl single-crystal alloys at intermediate temperatures.

Weaver, M. L.↗

Summary of Quantitative Interpretation of Image Far Ultraviolet Auroral Data

Direct imaging of the magnetosphere by instruments on the IMAGE spacecraft is supplemented by simultaneous observations of the global aurora in three far ultraviolet (FUV) wavelength bands. The purpose of the multi-wavelength imaging is to study the global auroral particle and energy input from thc magnetosphere into the atmosphere. This paper describes provides the method for quantitative interpretation of FUV measurements. The Wide-Band Imaging Camera (WIC) provides broad band ultraviolet images of the aurora with maximum spatial and temporal resolution by imaging the nitrogen lines and bands between 140 and 180 nm wavelength. The Spectrographic Imager (SI), a dual wavelength monochromatic instrument, images both Doppler-shifted Lyman alpha emissions produced by precipitating protons, in the SI-12 channel and OI 135.6 nm emissions in the SI-13 channel. From the SI-12 Doppler shifted Lyman alpha images it is possible to obtain the precipitating proton flux provided assumptions are made regarding the mean energy of the protons. Knowledge of the proton (flux and energy) component allows the calculation of the contribution produced by protons in the WIC and SI-13 instruments. Comparison of the corrected WIC and SI-13 signals provides a measure of the electron mean energy, which can then be used to determine the electron energy fluxun-. To accomplish this reliable modeling emission modeling and instrument calibrations are required. In-flight calibration using early-type stars was used to validate the pre-flight laboratory calibrations and determine long-term trends in sensitivity. In general, very reasonable agreement is found between in-situ measurements and remote quantitative determinations.

Frey, H. U.↗

XRD, TEM, IR, Raman and NMR Spectroscopy of In Situ Crystallization of Lithium Disilicate Glass

The structure of a Li2O-2SiO2 (LS2) glass was investigated as a function of pressure and temperature up to 6 GPa and 750 C respectively, using XRD, TEM, IR, Raman and NMR spectroscopy. Glass densified at 6 GPa has an average Si-O-Si bond angle approx.7deg lower than that found in glass processed at 4.5 GPa. At 4.5 GPa, lithium disilicate crystallizes from the glass, while at 6 GPa a new high pressure form of lithium metasilicate crystallizes. The new phase, while having lithium metasilicate crystal symmetry, contains at least 4 different Si sites. NMR results for 6 GPa sample indicate the presence of Q4 species with (Q(sup 4))Si-O-Si(Q(sup 4)) bond angles of approx.157deg. This is the first reported occurrence of Q(sup 4) species with such large bond angles in alumina free alkali silicate glass. No five- or six- coordinated Si are found.

Fuss, T.↗

Radiometric and Radiation Response of Visible FPAs

The readout integrated circuit (ROIC) used in these devices was originally developed for use in space based infrared systems operating at deep cryogenic temperatures and was selected because of its proven tolerance to total ionizing radiation? The detectors are a 128 x 128 array of 60 pm x 60 pm pixel elements that have been anti-reflection (AR) coated to improve the response at very short wavelengths. These visible focal plane arrays were operated at -40 C (233 K). Two focal planes were characterized using cobalt-60 radiation to produce ionizing total dose damage in the VFPAs. Both operational and performance data were obtained as functions of total dose. The first device tested showed no appreciable change in responsivity or noise up to 300 krad(Si). However, at the next dose level of 600 krad(Si), the readout was non-operational due to failure in the digital circuitry. The second device was characterized to a total dose of 750 krad(Si) with no observed change in responsivity. An increase dark current was observed in both devices, and in the second device, the dark current caused an increase in noise at low irradiance at 400 krad(Si) and above. The increase in dark current was somewhat un-expected for visible PIN detectors. The median dark current increased more than two orders of magnitude at 300 krad(Si) for the first device and a factor of 350 at 750 krad(Si) for pixels near the edge for the second device. The dark current was found to be a strong function of detector bias, with pixels near the edge of the array showing a greater increase in dark current with bias than those near the center. Since the optical response was not a function of bias, it is hypothesized that the dark current is a surface effect and that the variation in dark current with location is due to a variation in pixel bias, caused by a voltage drop across the pixel common lead. As the total dose increased, the dark current and the voltage drop increased

Hubbs, John↗