Red-shift arising from light passage in a magnetic field Semiannual report
Photon-photon scattering model for red shift of light passing through magnetic field
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Photon-photon scattering model for red shift of light passing through magnetic field
Preliminary study of alternate shift registers for eight-pole commutator
Heterodyne phase shifter with inductive delay line pickup providing stepless phase shift
Red shift of magnetic zenith hydrogen line profiles and role of injection pitch-angle distribution of auroral protons
Correlation between position and red shift of quasars indicating anisotropic universe or galactic origin of quasars
Quasi-stellar object red shift correlation with radio magnitude
Variational bound method applied to calculation of lower bounds on S-wave phase shifts for scattering of electrons by hydrogen atoms
Line-narrowing effect induced by laser radiation applied to measurements of isotope shifts for two optical transitions in neon
Energy level shifts due to atom confinement by conducting walls
Electric field enhanced Raman scattering and linear frequency shift of strontium titanate soft mode in random domain orientation and reorientation
Phase shift method for obtaining radiative lifetimes by electron collisions current
We propose an approach for keeping the light shift in laser cooled frequency standards down to the 10(sup -17) level without the use of mechanical shutters.
The shift coefficients were found to have a weak J dependence in which the magnitude of the coefficients increases in proportion to J for a given vibrational band.
This study reports experimental self-broadened line widths and pressure-induced frequency-shifts of water vapor in the spectral region between 590 cm(sup -1) and 24000 cm(sup -1).
The partial intermixing of the well and barrier materials offers unique opportunities to shift locally the bandgap of quantum well structures (QW).
Novel “Second-Shift” capabilities—leveraging Uncrewed Aerial Systems and Optionally Piloted Vehicles—are identified that could extend wildfire aerial logistics support into night or low-visibility conditions. Expert elicitations with subject-matter experts informed the development of these conceptual capabilities and identified key challenges in wildfire logistics operations. Furthermore, the potential of these capabilities could extend beyond aerial logistics support, encompassing aerial suppression, observation, and emergency extraction support for wildland firefighting. An approach to development, implementation and validation of the novel capabilities is described.
Novel “Second-Shift” capabilities—leveraging Uncrewed Aerial Systems and Optionally Piloted Vehicles—are identified that could extend wildfire aerial logistics support into night or low-visibility conditions. Expert elicitations with subject-matter experts informed the development of these conceptual capabilities and identified key challenges in wildfire logistics operations. Furthermore, the potential of these capabilities could extend beyond aerial logistics support, encompassing aerial suppression, observation, and emergency extraction support for wildland firefighting. An approach to development, implementation and validation of the novel capabilities is described.
Top-contact bottom-gate pentacene OFETs are fabricated with single layer dielectrics comprised of either polystyrene (PS), poly(4-methylstyrene) (P4MS), or poly(4-tert-butylstyrene) (P4TBS). The polystyrenes are blended with varying concentrations of two different small molecules, dibenzotetrathiafulvalene (DBTTF) and 2,8-difluoro-5,11-bis(triethylsilylethynyl)anthradithiophene (diF-TES-ADT), to form small, separated crystallites contained throughout the polymer dielectric layer. The OFET characteristics of these devices are investigated and their threshold voltage shifts are measured after –70 V static charging for 5 min. Two-terminal measurements are conducted using multiple different gate biases in the range of –50 to +50 V to investigate memristor behavior in the devices. OFETs containing DBTTF exhibited ΔVth increases as large as 330% relative to control OFETs containing no DBTTF, while OFETs containing at least 7.5 wt.% DBTTF exhibited memristor activity, with currents ranging from 20 nA to 44 µA depending on the applied bias. Furthermore, this work demonstrates that including small, separated crystallites in polymer dielectrics enhances their charge storage ability and can be promising for creating nonbinary memory devices for data processing. Additionally, the observed memristor activity indicates the OFETs in this work can be used in development of neuromorphic systems that aim to mimic the synaptic behavior of the human nervous system.