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At least 613 records · Page 34
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

The pumping mechanism for the neon-nitrogen nuclear excited laser

In order to determine the physical processes for pumping this laser, a detailed study of the afterglow system has been performed. The pumping mechanism has been found to be collisional-radiative electron-ion recombination. Microwave quenching of both the laser and spontaneous afterglow light have shown conclusively that a recombination process directly produces a nitrogen atom in either the upper laser level or, more likely, in a higher lying energy level which rapidly de-excites to the upper laser level.

Cooper, G. W.↗
NASA NTRS1978

The L-alpha/H-alpha intensity ratio in PKS 0237-23

The ratio I(L-alpha)/I(H-alpha) has been measured to be 1.7 plus or minus 0.6 in the quasar PKS 0237-23. The measured ratio is similar to that measured in 3C 273 by Davidsen et al. and to that inferred by Baldwin from a study of a large number of quasars; it is a factor of 5 to 14 smaller than expected from recombination theory. If the L-alpha radiation is resonantly scattered and there are modest amounts of dust within the ionized region, the measured ratio may be interpreted in terms of recombination theory, with L-alpha being depleted by absorption by the dust.

Hyland, A. R.↗
NASA NTRS1978

A technique for mass spectrometer measurements of atomic and molecular oxygen in the lower thermosphere

A neutral mass spectrometer with a quasi-open ion source was flown on each of the Atmosphere Explorer (AE) C, D, and E satellites. The three instruments provided an opportunity to study the effects of different source insert materials on the source surface chemistry. It was found that, after a period of conditioning in space, the recombination coefficient of atomic oxygen on gold appears to be substantially lower than it is on Nichrome V. The lower recombination coefficient on gold allows the spectrometer to directly measure a significant fraction of the incident atomic oxygen, making it possible to distinguish between ambient O and O2. Equations are developed to calculate the atomic and molecular oxygen densities. Preliminary measurements of molecular oxygen densities obtained by this technique agree well with measurements taken in the fly-through mode of operation.

Kayser, D. C.↗
NASA NTRS1978

Midlatitude oxygen ultraviolet nightglow

A rocket-borne spectrometer measured the weak UV nightglow from 1240 to 1670 A in the altitude range 180-345 km above White Sands, New Mexico. Detection of nightglow emissions at the atomic oxygen lines (1304 and 1356 A) confirmed the existence of a weak midlatitude oxygen nightglow similar to the tropical airglow. Radiative recombination appeared to be the principal cause of the peak observed intensities of the atomic oxygen line emissions, though a maximum 25% contribution from mutual neutralization of O(+) and O(-) could also be contemplated. Partial radiative recombination coefficients are derived from the data.

Brune, W. H.↗
NASA NTRS1978

Shortcomings in our understanding of the lower ionosphere as revealed by an analysis of radiowave absorption measurements

The present knowledge of ion production and loss processes in the D- and lower E-regions is evaluated with reference to a series of equatorial ground-based radiowave absorption measurements. An equatorial noontime reference electron density profile, corresponding to a nonflaring sun at solar cycle maximum, is derived on the basis of multifrequency absorption and virtual height measurements and data from a rocket-borne investigation. It is found that the Meira (1971) nitric oxide profile does not agree with the Gnanalingan (1974) empirical expression relating absorption to solar flux. Meira's densities below 90 km must be reduced by a factor of about 5 in order to correspond. A wide disparity is observed between the effective recombination coefficient and the average dissociative recombination coefficient for the known ion composition in the lower ionosphere. A study of diurnal variations of radiowave absorption and virtual height shows a great disagreement between calculated and measured values.

Gnanalingam, S.↗
NASA NTRS1979

Effect of dopants on annealing performance of silicon solar cells

The optimum annealing parameters of time and temperature for producing cell output recovery were established. Devices made from gallium doped and boron doped silicon were investigated. The cells ranged in resistivity from 0.1 to 20 ohm-cm and in thickness from 50 to 250 micrometers. The observations can be explained in a qualitative manner by postulating a pair of competing mechanisms to account for the low temperature reverse annealing seen in most boron and gallium doped silicon solar cells. Still another mechanism dominates at higher temperatures (350 C and greater) to complete this model. One of the mechanisms, defined as B, allows migrators to couple with radiation induced recombination sites thus increasing or enhancing their capture cross sections. This would tend to reduce minority carrier diffusion length. The new recombination complex is postulated to be thermally stable up to temperatures of approximately 350 C.

Scott-Monck, J. A.↗
NASA NTRS1978

Temperature and ionization balance dependence of O VII line ratios

The forbidden-plus-intersystem to resonance line ratio (G) for the heliumlike ion O VII is calculated, taking into account cascades, blended satellite lines, and radiative plus dielectric recombination. It is noted that G is of particular use for investigating radiative-transfer effects and nonequilibrium ionization in the solar corona and that the calculations are applicable to a low-density optically thin Maxwellian plasma. The temperature dependence of G is considered for the case of a steady-state equilibrium plasma, and the effect of departures from ionization equilibrium on G is examined. It is found that G is quite insensitive to temperature over the range from 600,000 to 6 million K for a steady-state plasma, but that recombinations may be suppressed or dominant, depending on the relative abundance of O VIII, for a plasma in which the state of ionization is not in equilibrium with the electron temperature. This latter effect is shown to be capable of causing large variations in G that are dependent on electron temperature.

Acton, L. W.↗
NASA NTRS1978

Metastable oxygen emission bands

Recombination of ground-state oxygen atoms populates six different bound electronic states of molecular oxygen. Of the six optical transitions expected between the three upper states at 4 to 4.5 electron volts and the two lowest states, five have been observed in the afterglow of a conventional helium-oxygen microwave discharge in both (O-16)2 and (O-18)2, three of them for the first time in gas-phase spectra. Generation of these emissions from oxygen atoms in a system free of molecular oxygen establishes that atom recombination is the production mechanism.

Slanger, T. G.↗
NASA NTRS1979

Optimum bandgap of several III-V heterojunction solar cells

Results of computer analysis of AlAs/Ga(1-x)As n-on-p heterojunction solar cells are presented with particular consideration given to interface recombination effects. It is found that, for an AlAs window layer, GaAs appears to be the optimum semiconductor for the active layer. Furthermore, even if the interface recombination is neglected, GaAs comes so close to being the optimum III-V active layer material that the additional effort required to incorporate a few percent of InAs into the active layer appears to be much greater than any expected efficiency increase.

Sutherland, J. E.↗
NASA NTRS1979

Ortho and parahydrogen in interstellar material

The ortho/para molecular hydrogen ratio in the interstellar medium is considered. It is shown that the ortho/para ratio will be 3:1 in practically all chemical reactions, even at relatively low temperatures. Two examples of exothermic processes that will result in the formation of a 3:1 ortho:para ratio, corresponding to a high-temperature equilibrium, are examined: H2 formation via three-body or surface recombination and catalytic recombination involving electrons and H(-) ions. Gas-phase scrambling ion reactions are also discussed, and it is suggested that virtually all the H2 equilibrated via scrambling reactions involving H(+) and H3(+) ions should exist as parahydrogen in the J ? 0 quantum state. Arguments are given that deuterium cannot interfere with the long scrambling chain that results in parahydrogen formation.

Reeves, R. R.↗
NASA NTRS1978

The Apollo 16 drive tube 60009/60010. II - Petrology and major element partitioning among the regolith components

The paper summarizes petrographic and electron microprobe data from 22 polished thin sections that represent the total length of double drive tube 60009/60010 and discusses a new application of the method of modal recombination to estimate bulk chemistry. The modal recombination approach can be used to reliably calculate the chemistry of the greater than 0.02-mm size fraction and, more significantly, to derive the total major element partitioning among the regolith components.

Vaniman, D. T.↗
NASA NTRS1978

Design considerations for silicon HLE solar cells

The high-low (H-L) junction in the emitter region that defines the high-low-junction emitter (HLE) solar cell suppresses the dark emitter recombination current J sub E so that the base recombination current dominates in determining the open-circuit voltage. For silicon cells this enables the achievement of considerably larger values of open-circuit voltage than those achievable in conventional structures. This paper describes experiments that demonstrate the achievement of J sub E suppression (to less than 5 x 10 to the -14th A/sq cm) and large open-circuit voltage (640 mV) in HLE test cells of two distinct types. In the first type (the diffused HLE structure) impurity diffusion forms the H-L junction in the emitter; in the second type (the oxide-charge-induced HLE structure) the H-L junction is formed in emitter material of relatively low doping concentration by an oxide-charge-induced electron accumulation layer.

Lindholm, F. A.↗
NASA NTRS1978

Photon degradation effects in terrestrial solar cells

A certain type of photon degradation effect has been observed experimentally in n(+)/p solar cells. It is found that this effect is caused by a recombination center, the formation of which requires the simultaneous presence of a lattice defect and a silver atom or complex of atoms. The center is electrically active in its equilibrium state; the energy level of the inactive center is located in the band gap, 0.37 eV below the conduction band. Conversion to an active recombination center can be brought about either by raising the minority carrier quasi-Fermi level to coincide with the position of the latent center level in the band gap or by the direct excitation of electrons from the valence band to the latent center level. Photon degradation can be prevented either by preventing the introduction of silver through the use of a clean diffusion system and clean initial material or by eliminating lattice damage through sufficient surface material removal prior to diffusion while at the same time restricting diffusion temperatures to 875 C or below.

Weizer, V. G.↗
NASA NTRS1979

Associative ionization of N/2D/ and O

Recent laboratory measurements have shown that N(2P) atoms, and thus probably hot N(2D) atoms, will recombine with atomic oxygen via an associative ionization process at the gas kinetic rate. In the present paper the likelihood of the associative ionization of N(2D) and O playing a significant role in the normal ionosphere is investigated in the light of several recent studies. It is concluded that the associative ionization process is not an important factor and that a more probable cause for disagreements in the various determinations of the recombination coefficient, is the difference in excited states of the ions in the various experiments.

Torr, M. R.↗
NASA NTRS1979

Simplified model of a volumetric direct nuclear pumped He-3-Ar laser

A physical model for the volumetric nuclear pumped He-3-Ar laser is described and the source terms arising from the He-3(n, p)H-3 reaction as well as the rate equations are given. Steady state solutions are derived for the densities of the species vs the fraction of argon. The dominant pumping mechanism is found to be collisional radiative recombination of the argon atomic ions and subsequent cascading into the upper laser level. The reactions following recombination are described and an expression is derived for the difference in densities of the argon 3d and 4p levels. Comparison with experiments shows good agreement.

Harries, W. L.↗
NASA NTRS1979

Studies of silicon p-n junction solar cells

To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

Neugroschel, A.↗
NASA NTRS1980

Study of the effects of impurities on the properties of silicon materials and performance of silicon solar cell

Zinc is a major residue impurity in the preparation of solar grade silicon material by the zinc vapor reduction of silicon tetrachloride. It was found that in order to get a 17 percent AMl cell efficiency, the concentration of the zinc recombination centers in the base region of silicon solar cells must be less than 4 x 10 to the 11th power Zn/cu cm in the p-base n+/p/p+ cell and 7 x 10 to the 11th power Zn/cu cm in the n-base p+/n/n+ cell for a base dopant impurity concentration of 5 x 10 to the 14th power atoms/cu cm. If the base dopant impurity concentration is increased by a factor of 10 to 5 x 10 to the 15th power atoms/cu cm, then the maximum allowable zinc concentration is increased by a factor of about two for a 17 percent AMl efficiency. The thermal equilibrium electron and hole recombination and generation rates at the double acceptor zinc cancers were obtained from previous high field measurements as well as new measurements at zero field. The rates were used in the exact d.c. circuit model to compute the projections.

Sah, C. T.↗
NASA NTRS1980

Tailored emitter, low-resistivity, ion-implanted silicon solar cells

Open-circuit voltages as high as 0.645 V (AM0, 25 C) have been obtained by a new process developed for low-resistivity silicon. The process utilizes high-dose phosphorus implantation followed by furnace annealing and simultaneous oxide growth. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient antireflection (AR) coating. Boron-doped, float-zone silicon with resistivities from 0.1 to 1.0 (omega)(cm) has been processed according to this sequence; results show that the highest open-circuit voltage is obtained with 0.1(omega)(cm) starting material. The effects of Auger recombination and bandgap narrowing caused by high doping concentrations in the n(+)junction region have been investigated by implanting phosphorus over a wide range of dose levels. The effects of emitter-phosphorus concentrations tailored to optimize electric fields in the emitter have also been investigated.

Minnucci, J. A.↗