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At least 613 records · Page 34

A Real-Time ANPC Inverter Digital Twin with Integrated Design-For-Trust

The demand for renewable energy has increased over the last few years, and so has the demand for greater expectations within the energy market. This increasing trend has been accompanied by more significant usage of internet-connected devices (IoT), leading to critical electrical infrastructure being connected to the internet. Implementing internet connectivity with such devices and systems provides benefits such as improving the system's performance, facilitating irregularity and anomaly mitigation, and providing additional situational awareness for enhanced decision-making. However, enhancing the connected system with IoT introduces a drawback – a greater vulnerability to cyber-attacks. Cyber-attacks targeting critical infrastructure in the electrical sector have occurred in the United States and Ukraine. These cyber-attacks highlight and expose vulnerabilities that a system inherits when connecting to the internet. These attacks left thousands of customers without electricity for hours until operators could regain control of the electric utility grid. Therefore, to address the vulnerabilities of an internet-connected power electronic device, this work focused on the hardware layer of the system. Implementing a cyber-control system inside the hardware layer can significantly reduce the possibility of an attacker patching malicious controller firmware into a photovoltaic grid-connected inverter, thus mitigating the likelihood that the inverter becomes inactive a cyber-attack scenario. With this mitigation technique, if a cyberattack is successful and an attacker gains control of the network, a cyber-defense technique is in place to mitigate the impact of the cyber-attack. This additional protection layer was developed based on an innovative concept known as Digital Twin (DT). A DT, in this case, replicates an Active-Neutral Point Clamped (ANPC) inverter and was designed using a hardware language known as VHDL (Very High-Speed Integrated Circuit Hardware Description Language) and applied to Field-Programmable-GateArray (FPGA). The DT is embedded within the FPGA and contained in a controller board, the UCB (Unified Controller Board), developed by the University of Arkansas electrical engineering team. This UCB also contains two Digital Signal Processors (DSPs) responsible for generating associated signals to control an authentic physical inverter. These DSP signals are received and processed by the FPGA that implements the DT of an ANPC; in other words, it simulates in realtime the expected output of an actual ANPC inverter using the signals from the DSP. When a new firmware is ready to be patched, the DT provides output signals simulating behavior that a real ANPC inverter would generate with the new firmware. The new firmware is tested to check if it meets all the operational requirements established using a Design-For-Trust technique (DFTr). If the new firmware fails in at least one of the DFT tests, it is considered malicious and must be rejected. This work is divided into sections, such as Background, which explains the pieces that were used and the strategy behind this work; Process and Procedure, which explains the methodology that was adopted to prove the reliability and effectiveness of this work; Results and Discussion, where the simulations and results are described and explained; followed by Conclusion and Future work section, which concludes this work and adds possible future projects to continue this work further.

do Amaral Custodio, Paulo Vitor↗

A parametric SPICE model for the simulation of spark gap switches

The use of SPICE-based software for the simulation of pulsed power systems—even large complex systems—has become commonplace in the pulsed power community. This is in contrast to earlier work in the field that relied on specially developed simulation codes such as Sandia’s Screamer or the Navy Research Lab’s Bertha, which natively incorporated models for common pulsed power components such as spark gap switches. Unlike these programs, SPICE programs provide a simple and familiar user interface and wide availability. However, SPICE programs do not include realistic models for key pulsed power circuit devices—including the spark gap switch. While simple switch models do exist in SPICE programs, these can only crudely approximate the behavior of a spark gap. This effort focuses on developing an SPICE circuit model for a gas-filled spark gap switch that is physically realistic while being simple enough to permit simulations to run in reasonable times on typical personal computers. Detailed information is provided for implementation in two common versions of SPICE: LTspice and Orcad PSPICE. Adaptation to other SPICE programs is possible with minimal modification. The model is intended as a design tool that uses physical parameters as inputs to connect it directly to the development of useable pulsed power systems. Data collected from the operation of a high-pressure pulsed-charged switch and a complete 12-stage Marx generator have been used to demonstrate the implementation and accuracy of the model over a wide range of parameters.

Pouncey, J. Cameron (ORCID:0000000153500816)↗

The Effect of a Reduction in the Catalyst Loading on a Mini Passive Direct Methanol Fuel Cell

Mini passive direct methanol fuel cells (mpDMFCs) appear to be a promising alternative for powering portable devices, since they use a liquid fuel, have a fast refuelling time, have a high efficiency and have a low environmental impact. However, some issues need to be solved before their commercialization, such as methanol crossover, short lifetime and high costs. The present work studies the effect of reducing the anode and cathode catalyst loading on the performance of a mpDMFC towards a reduction in the system costs and the characterization of the system losses. The undesirable losses that affect the fuel cell performance were identified and quantified using the electrochemical impedance spectroscopy (EIS) technique. Accordingly, a novel equivalent electric circuit (EEC) was proposed, accurately reproducing the mini pDMFC. In this work, a maximum power density of 7.07 mW cm−2 was obtained, with a methanol concentration of 5 M, using 2 mg cm−2 Pt-RuB and 4 mg cm−2 PtB. The mpDMFC allowed the cell to work with high methanol concentrations and reduced anode catalyst loadings.

Moreira, C. S.↗

Investigation of Various Transformer Topologies for HF Isolation Applications

High-frequency (HF) transformers are an essential part of many power electronic devices. The performance and behavior of HF transformers can greatly affect the efficiency and performance of all systems, particularly, from a parasitic parameter point of view. In this article, HF transformers' parasitic parameters, such as leakage inductances and parasitic capacitances, are analyzed using a novel analytical method, finite element method (FEM), and experimental measurements of different structures and winding arrangements. Also, the magnetic field, electric field, electric displacement field, and electric potential distribution within the transformers are simulated and analyzed. Four different HF transformers with E and U cores with different windings are designed and analyzed. Investigation outcomes help to classify structures according to the trade-off between leakage inductances and series parasitic capacitances. This information can later be used for the optimal selection and design of transformers as a function of their operating frequency for any power rating and voltage level. Moreover, 3-D FEM and experimental results validate the proposed methodology to be used for designing HF transformers in high-voltage/power applications.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Radio Frequency Properties of a 3D Printed Klystron Circuit

The manufacturing of active RF devices like klystrons is dominated by expensive and time-consuming cycles of machining and brazing. In this article, we characterize the RF properties of X-band klystron cavities and an integrated circuit manufactured with a novel additive manufacturing process. Parts are 3D printed in 316 L stainless steel with direct metal laser sintering, electroplated in copper, and brazed in one simple braze cycle. Stand-alone test cavities and integrated circuit cavities were measured throughout the manufacturing process. The un-tuned cavity frequency varies by less than 5% of the intended frequency, and Q factors reach above 1200. A tuning study was performed, and unoptimized tuning pins achieved a tuning range of 138 MHz without compromising Q. Klystron system performance was simulated with as-built cavity parameters and realistic tuning. Together, these results show promise that this process can be used to cheaply and quickly manufacture a new generation of highly integrated high power vacuum devices.

3D printing↗

Emergent and robust ferromagnetic-insulating state in highly strained ferroelastic LaCoO 3 thin films

Transition metal oxides are promising candidates for the next generation of spintronic devices due to their fascinating properties that can be effectively engineered by strain, defects, and microstructure. An excellent example can be found in ferroelastic LaCoO 3 with paramagnetism in bulk. In contrast, unexpected ferromagnetism is observed in tensile-strained LaCoO 3 films, however, its origin remains controversial. Here we simultaneously reveal the formation of ordered oxygen vacancies and previously unreported long-range suppression of CoO 6 octahedral rotations throughout LaCoO 3 films. Supported by density functional theory calculations, we find that the strong modification of Co 3d-O 2p hybridization associated with the increase of both Co-O-Co bond angle and Co-O bond length weakens the crystal-field splitting and facilitates an ordered high-spin state of Co ions, inducing an emergent ferromagnetic-insulating state. Our work provides unique insights into underlying mechanisms driving the ferromagnetic-insulating state in tensile-strained ferroelastic LaCoO 3 films while suggesting potential applications toward low-power spintronic devices.

36 MATERIALS SCIENCE↗

Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis

Resistance switching in metal–insulator–metal structures has been extensively studied in recent years for use as synaptic elements for neuromorphic computing and as nonvolatile memory elements. However, high switching power requirements, device variabilities, and considerable trade-offs between low operating voltages, high on/off ratios, and low leakage have limited their utility. Here, we have addressed these issues by demonstrating the use of ultraporous dielectrics as a pathway for high-performance resistive memory devices. Using a modified atomic layer deposition based technique known as sequential infiltration synthesis, which was developed originally for improving polymer properties such as enhanced etch resistance of electron-beam resists and for the creation of films for filtration and oleophilic applications, we are able to create ~15 nm thick ultraporous (pore size ~5 nm) oxide dielectrics with up to 73% porosity as the medium for filament formation. We show, using the Ag/Al 2 O 3 system, that the ultraporous films result in ultrahigh on/off ratio (>10 9 ) at ultralow switching voltages (~±600 mV) that are 10× smaller than those for the bulk case. In addition, the devices demonstrate fast switching, pulsed endurance up to 1 million cycles. and high temperature (125 °C) retention up to 10 4 s, making this approach highly promising for large-scale neuromorphic and memory applications. Additionally, this synthesis methodology provides a compatible, inexpensive route that is scalable and compatible with existing semiconductor nanofabrication methods and materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Revolutionary Aeropropulsion Concept for Sustainable Aviation: Turboelectric Distributed Propulsion

In response to growing aviation demands and concerns about the environment and energy usage, a team at NASA proposed and examined a revolutionary aeropropulsion concept, a turboelectric distributed propulsion system, which employs multiple electric motor-driven propulsors that are distributed on a large transport vehicle. The power to drive these electric propulsors is generated by separately located gas-turbine-driven electric generators on the airframe. This arrangement enables the use of many small-distributed propulsors, allowing a very high effective bypass ratio, while retaining the superior efficiency of large core engines, which are physically separated but connected to the propulsors through electric power lines. Because of the physical separation of propulsors from power generating devices, a new class of vehicles with unprecedented performance employing such revolutionary propulsion system is possible in vehicle design. One such vehicle currently being investigated by NASA is called the "N3-X" that uses a hybrid-wing-body for an airframe and superconducting generators, motors, and transmission lines for its propulsion system. On the N3-X these new degrees of design freedom are used (1) to place two large turboshaft engines driving generators in freestream conditions to minimize total pressure losses and (2) to embed a broad continuous array of 14 motor-driven fans on the upper surface of the aircraft near the trailing edge of the hybrid-wing-body airframe to maximize propulsive efficiency by ingesting thick airframe boundary layer flow. Through a system analysis in engine cycle and weight estimation, it was determined that the N3-X would be able to achieve a reduction of 70% or 72% (depending on the cooling system) in energy usage relative to the reference aircraft, a Boeing 777-200LR. Since the high-power electric system is used in its propulsion system, a study of the electric power distribution system was performed to identify critical dynamic and safety issues. This paper presents some of the features and issues associated with the turboelectric distributed propulsion system and summarizes the recent study results, including the high electric power distribution, in the analysis of the N3-X vehicle.

Kim, Hyun Dae↗

A Simple Control to Reduce the Voltage Stress of Non-Conducting Switches in Three-Level ANPC Converter

With the development of wide band-gap (WBG) technology, the switching speed of power semiconductor devices is increased, which makes circuits more sensitive to parasitics. For three-level active neutral point clamped (3L-ANPC) converters, the over-voltage of non-conducting switches can be an issue. This paper analyzes the multiple commutation loops in 3L-ANPC converter and summarizes the impact factors of the over-voltage for the non-conducting switch. It is found that the nonlinearity of the output capacitance of the device can significantly influence the over-voltage. A simple control without introducing any additional hardware circuit is proposed to attenuate the impact of the nonlinearity. With the proposed control, the peak over-voltage of the non-conducting switch can be reduced significantly. Multi-pulse test is conducted for a 3L- ANPC converter built with silicon carbide (SiC) MOSFETs. The testing results show that the peak over-voltage decreases from 892 V to 624 V with the proposed control. More detailed analysis and experimental results will be provided in the final paper.

SiC MOSFET↗

Probing and controlling oxygen impurity diffusion in h -BN semi-bulk crystals

Combining its unique features of ultrawide bandgap (UWBG) and two-dimensional nature, h-BN has been explored for emerging applications such as deep ultraviolet optoelectronic devices and single photon emitters. One of the unusual applications of h-BN is for solid-state neutron detectors by utilizing the property of high thermal neutron capture cross section of B-10 as well as its UWBG properties. Although a record high detection efficiency of 59% has been attained by h-BN detectors, the understanding/minimization of defects and impurities is still needed to further advance the h-BN material and detector technologies. We report metal organic chemical vapor deposition growth and oxygen (O) impurity diffusion in thick h-BN. The diffusion coefficient (D) of O impurities has been measured via the evolution of an oxygen related emission with the etching depth, providing a value of D of ∼ 2 × 10−13 cm2/s at 1450 °C and supporting the interpretation that oxygen in h-BN is a substitutional donor. A multiple-buffer-layer approach was employed to mitigate to a certain degree the issue of oxygen diffusion from sapphire substrate during growth. It was demonstrated that the performance of h-BN neutron detectors fabricated from the wafer incorporating multiple buffer layers was significantly improved, as manifested by the enhanced thermal neutron detection efficiency. The advancement of the crystal growth technology of h-BN semi-bulk crystals creates applications in optoelectronic and power electronic devices utilizing the UWBG semiconductor properties of h-BN, while high efficiency h-BN neutron detectors have the potential to supplant the traditional He-3 gas detectors in various application areas by offering the obvious advantages of UWBG semiconductor technologies.

Physics↗

A Review of Distributed Electric Propulsion Concepts for Air Vehicle Technology

The emergence of distributed electric propulsion (DEP) concepts for aircraft systems has enabled new capabilities in the overall efficiency, capabilities, and robustness of future air vehicles. Distributed electric propulsion systems feature the novel approach of utilizing electrically-driven propulsors which are only connected electrically to energy sources or power-generating devices. As a result, propulsors can be placed, sized, and operated with greater flexibility to leverage the synergistic benefits of aero-propulsive coupling and provide improved performance over more traditional designs. A number of conventional aircraft concepts that utilize distributed electric propulsion have been developed, along with various short and vertical takeoff and landing platforms. Careful integration of electrically-driven propulsors for boundary-layer ingestion can allow for improved propulsive efficiency and wake-filling benefits. The placement and configuration of propulsors can also be used to mitigate the trailing vortex system of a lifting surface or leverage increases in dynamic pressure across blown surfaces for increased lift performance. Additionally, the thrust stream of distributed electric propulsors can be utilized to enable new capabilities in vehicle control, including reducing requirements for traditional control surfaces and increasing tolerance of the vehicle control system to engine-out or propulsor-out scenarios. If one or more turboelectric generators and multiple electric fans are used, the increased effective bypass ratio of the whole propulsion system can also enable lower community noise during takeoff and landing segments of flight and higher propulsive efficiency at all conditions. Furthermore, the small propulsors of a DEP system can be installed to leverage an acoustic shielding effect by the airframe, which can further reduce noise signatures. The rapid growth in flight-weight electrical systems and power architectures has provided new enabling technologies for future DEP concepts, which provide flexible operational capabilities far beyond those of current systems. While a number of integration challenges exist, DEP is a disruptive concept that can lead to unprecedented improvements in future aircraft designs.

electric propulsion↗

Design Considerations for High-Voltage Insulated Gate Drive Power Supply for 10-kV SiC MOSFET Applied in Medium-Voltage Converter

High-performance gate drive power supply (GDPS) plays a crucial role in ensuring the reliability and safety of the gate driver for power semiconductor devices. This article focuses on the design of a high-voltage-insulated GDPS for the 10-kV silicon carbide MOSFET in medium-voltage (MV) application. Design considerations, including insulation scheme, high-voltage-insulated transformer design, and load voltage regulation scheme, are proposed. In addition, the performance of the secondary-side-regulated (SSR) GDPS and that of the primary-side-regulated (PSR) GDPS are compared for several aspects, including interwinding capacitance, load voltage regulation rate, conversion efficiency, and hardware complexity. Finally, an SSR GDPS and a PSR GDPS, with an insulation voltage of 20 kV, are built in the lab. Furthermore, the test results demonstrate that the PSR GDPS is more preferable because of lower interwinding capacitance, lower load voltage regulation rate, higher conversion efficiency, and simpler control circuit.

42 ENGINEERING↗

1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings

Here, this work reports on the fabrication and properties of a homojunction gallium nitride (GaN) p-i-n (PIN) rectifier fabricated on a free-standing GaN substrate. Uniform device performance is achieved with breakdown voltage (BV) >1.2 kV and low ON-resistance × area ( R ON A ). The statistics of the BV measurements show 58.5% of devices achieve BV >1.3 kV, and 71.1% of devices achieve BV >1.2 kV, as attributed to high quality and control in both epitaxial growth and device process. At room temperature, R ON A is 0.23 mΩ∙ cm 2 at a current density ( J ) of 6.9 kA/cm2. The corresponding Baliga’s figure of merit is >5.97 GW/cm 2 . Temperature-dependent reverse I – V measurements were performed and show a positive temperature coefficient of 0.42 V/K, indicating the avalanche capability of reverse breakdown. Further analysis with the Poole-Frenkel model on the temperature-dependent measurement suggested that a trap-assisted tunneling process contributed to the reverse leakage current. Floating guard rings (FGRs) formed by nitrogen implantation serve as an effective edge termination technique in these GaN PIN rectifiers, resulting in uniform performance in both forward and reverse bias.

42 ENGINEERING↗

Two-Step Multi-Physics Analysis of an Annular Linear Induction Pump for Fission Power Systems

One of the key technologies associated with fission power systems (FPS) is the annular linear induction pump (ALIP). ALIPs are used to circulate liquid-metal fluid for transporting thermal energy from the nuclear reactor to the power conversion device. ALIPs designed and built to date for FPS project applications have not performed up to expectations. A unique, two-step approach was taken toward the multi-physics examination of an ALIP using ANSYS Maxwell 3D and Fluent. This multi-physics approach was developed so that engineers could investigate design variations that might improve pump performance. Of interest was to determine if simple geometric modifications could be made to the ALIP components with the goal of increasing the Lorentz forces acting on the liquid-metal fluid, which in turn would increase pumping capacity. The multi-physics model first calculates the Lorentz forces acting on the liquid metal fluid in the ALIP annulus. These forces are then used in a computational fluid dynamics simulation as (a) internal boundary conditions and (b) source functions in the momentum equations within the Navier-Stokes equations. The end result of the two-step analysis is a predicted pump pressure rise that can be compared with experimental data.

Fission Power Systems↗

Two-Step Multi-Physics Analysis of an Annular Linear Induction Pump for Fission Power Systems

One of the key technologies associated with fission power systems (FPS) is the annular linear induction pump (ALIP). ALIPs are used to circulate liquid-metal fluid for transporting thermal energy from the nuclear reactor to the power conversion device. ALIPs designed and built to date for FPS project applications have not performed up to expectations. A unique, two-step approach was taken toward the multi-physics examination of an ALIP using ANSYS Maxwell 3D and Fluent. This multi-physics approach was developed so that engineers could investigate design variations that might improve pump performance. Of interest was to determine if simple geometric modifications could be made to the ALIP components with the goal of increasing the Lorentz forces acting on the liquid-metal fluid, which in turn would increase pumping capacity. The multi-physics model first calculates the Lorentz forces acting on the liquid metal fluid in the ALIP annulus. These forces are then used in a computational fluid dynamics simulation as (a) internal boundary conditions and (b) source functions in the momentum equations within the Navier-Stokes equations. The end result of the two-step analysis is a predicted pump pressure rise that can be compared with experimental data.

Fission Power Systems↗

High Performance Pd/4H-SiC Epitaxial Schottky Barrier Radiation Detectors for Harsh Environment Applications

Although many refractory metals have been investigated as the choice of contact metal in 4H-SiC devices, palladium (Pd) as a Schottky barrier contact for 4H-SiC radiation detectors for harsh environment applications has not been investigated adequately. Pd is a refractory metal with high material weight-to-thickness ratio and a work function as high as nickel, one of the conventional metal contacts for high performing 4H-SiC Schottky barrier detectors (SBDs). In this article, Pd/4H-SiC epitaxial SBDs have been demonstrated for the first time as a superior self-biased (0 V applied bias) radiation detector when compared to benchmark Ni/4H-SiC SBDs. The Pd/4H-SiC SBD radiation detectors showed a very high energy resolution of 1.9% and 0.49% under self- and optimized bias, respectively, for 5486 keV alpha particles. The SBDs demonstrated a built-in voltage (V bi ) of 2.03 V and a hole diffusion length (L d ) of 30.8 µm. Such high V bi and L d led to an excellent charge collection efficiency of 76% in the self-biased mode. Capacitance mode deep level transient spectroscopy (DLTS) results revealed that the “lifetime-killer” Z 1/2 trap centers were present in the 4H-SiC epilayer. Another deep level trap was located at 1.09 eV below the conduction band minimum and resembles the EH5 trap with a concentration of 1.98 × 10 11 cm –3 and capture cross-section 1.7 × 10 –17 cm –2 ; however, the detector performance was found to be limited by charge trapping in the Z 1/2 center. The results presented in this article revealed the unexplored potential of a wide bandgap semiconductor, SiC, as high-efficiency self-biased radiation detectors. Such high performance self-biased radiation detectors are poised to address the longstanding problem of designing self-powered sensor devices for harsh environment applications e.g., advanced nuclear reactors and deep space missions.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE 10658 Project Sensitivity-Driven Wide Area Protection (SWAP) Coordination Tools for IBRs

Utilities have seen a rapid increase in solar, wind, and battery energy storage systems that interconnect to their electric system through inverters. Inverter-Based Resources (IBRs) have fault current characteristics that are unlike the fault current response of traditional rotating-machine-based generators, which is well-known and repeatable. IBR’s non-traditional fault current behavior is due to the IBR control scheme, which is configured to provide a clean AC output but also protects the inverter’s sensitive power electronics devices from damage from conditions such as overcurrent. This results in a low fault current magnitude, low or no negative sequence current injection, the variability of sequence component currents, the variability of voltage with respect to current angles, and the lack of inertia. The control scheme also results in a fault current response that can vary between manufacturers and between models of the same manufacturer. High penetration of IBRs can adversely affect the protection schemes applied in areas with high penetration of IBRs. With the proliferation of IBRs, utilities are finding out that conventional protection schemes are not adequately equipped to protect the electric systems. This is mainly because the existing protection elements and practices have been designed based on the fault current response of conventional rotating machines. In several cases, the available literature does not provide any clear solution for the issues when the protection scheme does not operate properly near IBRs. This report identifies various protection challenges due to IBRs that industry is facing, from the utility perspective. Instead of focusing on one issue, this report looks broadly at all the challenges that system protection has experienced with high penetration of IBRs. Based on the IBR response from various utilities during real fault events and gathering perspectives from different utility SMEs via questionnaire, the report summarizes the gathered data and internal experiences.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Utilities Perspective on Protection Challenges with High IBR Penetration

Utilities have seen rapid increase in Solar, Wind, and Battery Energy Storage Resources that interconnect to their electric system through Inverters. Inverter-Based Resources (IBRs) have fault current characteristics that are unlike the fault current response of traditional rotating-machine-based generators, which is well known and repeatable. IBR’s non-traditional fault current behavior is due to the IBR control scheme, which is configured to provide a clean AC output but also protect the inverter’s sensitive power electronics devices from damage, one source of which is overcurrent. This results in low fault current magnitude, low or no negative sequence current injection, the variability of sequence component currents, the variability of voltage with respect to current angles, and the lack of inertia. The control scheme also results in a fault current response that can vary between manufactures and between models of the same manufacturer. High penetration of IBRs can adversely affect the protection schemes applied in areas with high penetration of IBRs. With the proliferation of IBRs, utilities are finding out that conventional protection schemes are not adequately equipped to protect the electric systems. This is mainly because the existing protection elements and practices have been designed based on the fault current response of conventional rotating machines. In several cases, the available literature does not provide any clear solution for the issues when the protection scheme does not operate properly near IBRs. This presentation identifies various protection challenges due to IBRs that industry is facing, from the utility perspective. Instead of facing on one issue, we are looking broadly on all the challenges that system protection has experienced with high penetration of IBRs. Based on the IBR response from various utilities during real fault events and gathering perspective from different utility SMEs via questionnaire, the presentation summarizes on gathered data and internal experiences.

24 POWER TRANSMISSION AND DISTRIBUTION↗