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At least 613 records · Page 34
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Rondorfite-type structure — XPS and UV–vis study

Highlights: • Structural and spectroscopic characterization of chlorosilicate mineral, rondorfite. • Characterization of main photoemission lines and valence band spectra. • The study of color origin’s using UV–vis spectroscopy. • Analysis of structural changes in context of origin of natural fluorescence. • Discussion of a new application possibilities of analyzed mineral - Abstract: This paper focuses on X-ray diffraction, X-ray photoelectron and UV–vis spectroscopy of two different (green, orange) rondorfite samples. The differences in the sample color originate from various O/Cl ratios. The orange color was found to be related either to the isomorphic substitution of Fe{sup 3+}/Al{sup 3+} for Mg{sup 2+}, the presence of atypical [MgO{sub 4}] tetrahedrons in crystal structure or electronegativity of the sample. The tetrahedron is known to be very prone to accumulation of impurities and substitute atoms. Moreover, the XPS data showed tetrahedrally coordinated Mg{sup 2+} and isomorphic substitution of Al{sup 3+}/Fe{sup 3+} for Mg{sup 2+}, which influences local disordering and the point defects density and distribution. Non-equilibrium chlorine positions inside the crystal cages as well as Ca-Cl bonds have also been found. The XPS measurements as a function of temperature indicate occurrence of a structural transformation at about 770 K which is accompanied by a rotation of silicate tetrahedra within magnesiosilicate pentamer and luminescence disappearance.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Exploring the relationship between deposition method, microstructure, and performance of Nb/Si-based superconducting coplanar waveguide resonators

Superconducting quantum circuits (SQC) are one of the most promising hardware platforms for quantum computing, yet their performance is currently limited by the presence of various structural defects inside the circuit's structure. Despite impressive progress in the past decade, a precise understanding of the origin of these defects from various fabrication processes and their impact on coherence is still lacking. Here, in this study, we performed a comprehensive investigation on the microstructure, superconductivity, and resonator quality factor of Nb films deposited by high-power impulse magnetron sputtering (HiPIMS) and direct current (DC) magnetron sputtering. A suite of characterization techniques, including electron microscopy with spectroscopy, secondary ion mass spectrometry, magneto-optical microscopy, and pump-probe reflectivity spectroscopy is used. We reveal that niobium (Nb) resonators fabricated using HiPIMS exhibit a smaller average grain size, thicker surface oxide with larger thickness variations (rougher surface), and a thicker amorphous Nb/Si interface layer compared to samples deposited by DC sputtering. We identified that the amorphous Nb oxides (mainly located at the Nb surface and along the grain boundaries) and Nb-Si amorphous layers (at the Nb/Si interface) are major and potential sources of two-level system (TLS), while off-stochiometric oxides and suboxides of Nb close to the surface, crystalline defects (i.e., dislocations at grain boundary, point defects introduced during deposition) are main contributors of non-TLS sources. Our findings clarify the relationship between different defects and coherence loss mechanisms, highlighting the importance of material microstructure control on performance optimization in SQC.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Efficient carrier transport in halide perovskites: theoretical perspectives

Recently, halide perovskites have been shown to exhibit excellent carrier transport properties. Density functional calculations are performed to study the electronic structure, dielectric properties, and defect properties of β-CH 3 NH 3 PbI 3 . Our results show that Pb chemistry plays an important role in a wide range of material properties, i.e., small effective masses, enhanced Born effective charges and lattice polarization, and the suppression of the formation of deep defect levels, all of which contribute to the exceptionally good carrier transport properties observed in CH 3 NH 3 PbI 3 . Defect calculations show that, among native point defects (including vacancies, interstitials, and antisites), only iodine vacancy is a low-energy deep trap and non-radiative recombination centre. Finaly, alloying iodide with chloride reduces the lattice constant of the iodide and significantly increases the formation energy of interstitial defects, which explains the observed substantial increase in carrier diffusion length in mixed halide CH 3 NH 3 PbI 3 Cl compared to that in CH 3 NH 3 PbI 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2014

Shockley-Read-Hall lifetimes in CdTe

A combination of first principles electronic structure calculations, Green's function method, and empirical tight-binding Hamiltonian method is used to evaluate the minority carrier lifetimes of CdTe due to recombination via native point defects in CdTe. For defect energy levels near mid-gap, our calculated value of the Shockley-Read-Hall capture cross section for both electrons and holes is ~10⁻¹³ cm², which is considerably different from the most commonly employed values. We further find that minority carrier lifetimes in doped CdTe are affected more by defect levels closer to the Fermi level than those in the mid-gap.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Atomistic simulation of Er irradiation induced defects in GaN nanowires

Classical molecular dynamics simulation was used to irradiate a GaN nanowire with rear-earth erbium (Er). Ten cumulative irradiations were done using an ion energy of 37.5 keV on a 10 × 10 nm²surface area which corresponds to a fluence of 1 × 10¹³ cm⁻². We studied the location and types of defects produced in the irradiation. Er implantation leads to a net positive (expansion) strain in the nanowire and especially at the top region a clear expansion has been observed in the lateral and axial directions. The lattice expansion is due to the hydrostatic strain imposed by a large number of radiation induced defects at the top of the NW. Due to the large surface-to-volume ratio, most of the defects were concentrated at the surface region, which suggests that the experimentally observed yellow luminescence (YL) in ion implanted GaN NWs arises from surface defects. We observed big clusters of point defects and vacancy clusters which are correlated with stable lattice strain and the YL band, respectively.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Low-noise, radiation tolerant SiCpms

Over the last 10 years, our R&D effort has resulted in a steady progress on improving Geiger detector array technology performance, verifying their reliability and developing three cell layout libraries containing more than 2200 primitive cells for Si and SiC Geiger based single-photon detectors and silicon ROIC array fabrication. Awards from DOE, NASA and DOD, as wells as commercial R&D orders supported much progress, relevant to this program. The expertise gained and the technologies developed or qualified during these programs provided the design database and expertise to carry out the development of this new SiC photomultiplier (SiCpm) technology, successful fabrication of SiCpm detectors, and evaluation of their radiation hardness. After irradiation with protons and neutrons at 1015cm-2 and 1014cm-2 respectively, SiCpms proved radiation hardness, exceeding the expected radiation tolerance The defects induced by irradiation were mainly point defects. A new improved DLTS method (fDLTS – full wave DLTS) hardware and data processing software specific to investigating radiation damage in SiC was developed. Further work is needed to better characterize and control defects induced by charged particles. We recommend further funding of radiation hardened technology development and validation; qualification of device-specific characterization methods like f-DLTS, development of more methods to evaluate defects in SiC, more active involvement of the national labs in evaluating the SiCpm devices, and DOE support of technology transfer to a qualified foundry.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Effect of Mg doping on the structural and free-charge carrier properties of InN films

We present a comprehensive study of free-charge carrier and structural properties of two sets of InN films grown by molecular beam epitaxy and systematically doped with Mg from 1.0 × 10{sup 18} cm{sup −3} to 3.9 × 10{sup 21} cm{sup −3}. The free electron and hole concentration, mobility, and plasmon broadening parameters are determined by infrared spectroscopic ellipsometry. The lattice parameters, microstructure, and surface morphology are determined by high-resolution X-ray diffraction and atomic force microscopy. Consistent results on the free-charge carrier type are found in the two sets of InN films and it is inferred that p-type conductivity could be achieved for 1.0 × 10{sup 18} cm{sup −3} ≲ [Mg] ≲ 9.0 × 10{sup 19} cm{sup −3}. The systematic change of free-charge carrier properties with Mg concentration is discussed in relation to the evolution of extended defect density and growth mode. A comparison between the structural characteristics and free electron concentrations in the films provides insights in the role of extended and point defects for the n-type conductivity in InN. It further allows to suggest pathways for achieving compensated InN material with relatively high electron mobility and low defect densities. The critical values of Mg concentration for which polarity inversion and formation of zinc-blende InN occurred are determined. Finally, the effect of Mg doping on the lattice parameters is established and different contributions to the strain in the films are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Photoluminescent properties of electrochemically synthetized ZnO nanotubes

ZnO nanotubes were prepared by a sequential combination of electrochemical deposition, chemical attack and regeneration. ZnO nanocolumns were initially electrodeposited on conductive substrates and then converted into nanotubes by a process involving chemical etching and subsequent regrowth. The morphology of these ZnO nanocolumns and derived nanotubes was monitored by Scanning Electron Microscopy and their optical properties was studied by photoluminescence spectroscopy. Photoluminescence were measured as a function of temperature, from 6 to 300 K, for both nanocolumns and nanotubes. In order to study the behaviour of induced intrinsic defect all ZnO films were annealed in air at 400 °C and their photoluminescent properties were also registered before and after annealing. The behaviour of photoluminescence is explained taking into account the contribution of different point defects. A band energy diagram related to intrinsic defects was proposed to describe the behaviour of photoluminescence spectra. - Highlights: •ZnO nanotubes were obtained after etching and regrowth of electrodeposited ZnO films. •Photoluminescence spectra contain two parts involving excitonic and defects transitions. •Annealing produces a blue shift in the PL peaks in both ZnO nanocolumns and nanotubes. •Etching causes a blue shift in PL peaks due to confinement effect in nanotubes walls.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Defect induced d{sup 0} ferromagnetism in a ZnO grain boundary

Several experimental studies have referred to the grain boundary (GB) defect as the origin of ferromagnetism in zinc oxide (ZnO). However, the mechanism of this hypothesis has never been confirmed. Present study investigates the atomic structure and the effect of point defects in a ZnO GB using the generalized gradient approximation+U approximation. The relaxed GB possesses large periodicity and channels with 8 and 10 numbered atoms having 4 and 3 fold coordination. The Zn vacancy (V{sub Zn}) shows a tendency to be attracted to the GB, relative to the bulk-like region. Although no magnetization is obtained from point defect-free GB, V{sub Zn} induces spin polarization as large as 0.68 μ{sub B}/atom to the O sites at the GB. Ferromagnetic exchange energy >150 eV is obtained by increasing the concentration of V{sub Zn} and by the injection of holes into the system. Electronic structure analysis indicates that the spin polarization without external dopants originates from the O 2p orbitals, a common feature of d{sup 0} semiconductors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2011

Chalcogenide Photonic Crystal Filters For Optical Communication

A proper arrangement of photonic crystal waveguide and a point defect cavity gives an important application of photonic filter device in optical communications. We have studied a narrow band filter and a channel drop filter device using 2-D photonic crystal with square lattice structure. A narrow band filter is applied to select a narrow frequency band signal from incoming light, while a channel drop filter is used to drop a particular frequency signal from incoming light. Chalcogenide As{sub 2}S{sub 3} is compared with conventional Si material regarding applications as feasible material for optical devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2012

Optically Generated Reconfigurable Photonic Structures of Elastic Quasiparticles in Frustrated Cholesteric Liquid Crystals

We describe laser-induced two-dimensional periodic photonic structures formed by localized particle-like excitations in an untwisted confined cholesteric liquid crystal. The individual particle-like excitations (dubbed 'Torons') contain three-dimensional twist of the liquid crystal director matched to the uniform background director field by topological point defects. Using both single-beam-steering and holographic pattern generation approaches, the periodic crystal lattices are tailored by tuning their periodicity, reorienting their crystallographic axes, and introducing defects. Moreover, these lattices can be dynamically reconfigurable: generated, modified, erased and then recreated, depending on the needs of a particular photonic application. This robust control is performed by tightly focused laser beams of power 10-100 mW and by low-frequency electric fields at voltages {approx}10 V applied to the transparent electrodes.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Investigations on the growth and characterization of vertically aligned zinc oxide nanowires by radio frequency magnetronsputtering

Undoped vertically aligned ZnO nanowires have been grown on silicon (111) substrates by the rf magnetron sputtering technique without metal catalyst. The diameter, length and density distributions of the nanowires have been analyzed with respect to the different growth durations. The tapering of the nanowires is observed for the growth duration of 120 min owing to the insufficient adatoms on the growth front. In the X-ray diffraction pattern, the dominant (002) peak with narrow full width at half maximum (FWHM) of ZnO nanowires indicates the c-axis orientation and high crystalline nature with hexagonal wurtzite crystal structure. The narrow FWHM of E{sub 2}{sup low} and E{sub 2}{sup high} phonon modes (1.4 and 9.1 cm{sup −1}) provide an additional evidence for the high crystalline and optical properties of the nanowires. The low temperature photoluminescence spectra are dominated by the green emission at∼2.28 eV induced by the electron transitions between shallow donor and acceptor energy levels. - Graphical abstract: Coalescence free vertically aligned ZnO nanowires have been grown on silicon (111) substrate by the radio frequency magnetron sputtering technique. Highlights: ► ZnO nanowires have been grown by rf magnetron sputtering. ► A morphologically superior and coalescence free ZnO nanowires have been realized. ► ZnO nanowires exhibit hexagonal wurtzite crystal structure. ► A dominant visible emission indicates the presence of point defects in nanowires.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2011

Radiation-induced damage and evolution of defects in Mo

The formation of defects in bcc Mo lattice as a result of 50-keV Xe bombardment is studied via atomistic simulation with an interatomic potential developed using the force-matching ab initio based approach. The defect evolution in the cascade is described. Diffusion and interaction of interstitials and vacancies are analyzed. Only small interstitial atom clusters form directly in the cascade. Larger clusters grow only via aggregation at temperatures up to 2000 K. Stable forms of clusters demonstrate one-dimensional diffusion with a very high diffusion coefficient and escape quickly to the open surface. Point vacancies have much lower diffusivity and do not aggregate. The possibility of a large prismatic vacancy loop formation near the impact surface as a result of fast recrystallization is revealed. The mobility of the vacancy dislocation loop segments is high, however, the motion of the entire loops is strongly hindered by neighbor point defects. This paper explains the existence of the large prismatic vacancy loops and the absence of the interstitial loops in the recent experiments with ion irradiation of Mo foils.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Applications of Transient Grating Spectroscopy to Radiation Materials Science

Radiation damage is an inherently multi-scale phenomenon, with much of the key material evolution occurring at the mesoscale. Current techniques for the direct interrogation of material property changes due to irradiation either function with very small volumes, such as in-situ TEM, cannot cover the full range of defect populations produced, such as in positron annihilation spectroscopy, or requires destruction of the test material, such as in standard or micromechanical testing. In addition, the ultimate quantities of interest to radiation materials scientists are the changes in key material properties with irradiation. These include stiffness, ductility, and thermal conductivity for structural materials, and optical properties such as index of refraction or changes in transmittance spectra for optically active materials. The latter of these are often correlated directly to stress- or thermally-induced changes, themselves a function of the specific defect populations responsible for their change. The rapid study of such a mesoscale phenomenon requires an inherently mesoscale technique, where multiple quantities of interest can be accurately measured in very short times. Determining the sensitivity of any technique with known certainly is of critical importance to qualifying a new technique to measure in-situ material property changes during irradiation. In this paper, we present the new applicability of an existing technique, known as transient grating (TG) spectroscopy, to rapidly and accurately study key problems in radiation materials science. Results quantifying the absolute sensitivity of the technique are presented, alongside molecular dynamics (MD) simulations of the TG spectroscopy process to gauge direct agreement between theory, simulation, and experiment. An example problem of interest is demonstrated as an illustration of what is possible, showing elastic and thermal changes in irradiated silicon carbide (SiC) films. Finally, future work to quantify the effects of experimentally-simulated radiation defects is proposed, in support of building a database to use TG spectroscopy to deconvolve irradiated material property changes in-situ in terms of the defect populations responsible for their evolution. The application of the TG spectroscopy technique to in-situ radiation materials science has the potential to answer long-standing questions in the field, relating to ion beam rastering, the onset of void swelling, and direct measurement of radiation-created point defect concentrations. Before it can do so, the technique must carefully be analyzed and tuned to increase its sensitivity, the certainty of its results, and the ability to predict radiation-induced changes by simulations must be developed. Making such measurements in-situ with the aid of predictive MD simulations has the potential to elucidate mechanisms of radiation damage accumulation, as well as more rapidly qualify radiation-resistant alloys for service in nuclear systems. Work is underway to build this database of experimentally-simulated radiation-produced defects, which will be combined and compared with actual irradiated materials for eventual in-situ deconvolution of the TG signal into the defect populations responsible for irradiation-induced microstructural change. (authors)

36 MATERIALS SCIENCE↗
DOE OSTI2013

High-field critical current enhancement by irradiation induced correlated and random defects in (Ba{sub 0.6}K{sub 0.4})Fe{sub 2}As{sub 2}

Mixed pinning landscapes in superconductors are emerging as an effective strategy to achieve high critical currents in high, applied magnetic fields. Here, we use heavy-ion and proton irradiation to create correlated and point defects to explore the vortex pinning behavior of each and combined constituent defects in the iron-based superconductor Ba{sub 0.6}K{sub 0.4}Fe{sub 2}As{sub 2} and find that the pinning mechanisms are non-additive. The major effect of p-irradiation in mixed pinning landscapes is the generation of field-independent critical currents in very high fields. At 7 T ‖ c and 5 K, the critical current density exceeds 5 MA/cm{sup 2}.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Quasi-continuum photoluminescence: Unusual broad spectral and temporal characteristics found in defective surfaces of silica and other materials

We previously reported a novel photoluminescence (PL) with a distribution of fast decay times in fused silica surface flaws that is correlated with damage propensity by high fluence lasers. The source of the PL was not attributable to any known silica point defect. Due to its broad spectral and temporal features, we here give this PL the name quasi-continuum PL (QC-PL) and describe the features of QC-PL in more detail. The primary features of QC-PL include broad excitation and emission spectra, a broad distribution of PL lifetimes from 20 ps to 5 ns, continuous shifts in PL lifetime distributions with respect to emission wavelength, and a propensity to photo-bleach and photo-brighten. We found similar PL characteristics in surface flaws of other optical materials, including CaF{sub 2}, DKDP, and quartz. Based on the commonality of the features in different optical materials and the proximity of QC-PL to surfaces, we suggest that these properties arise from interactions associated with high densities of defects, rather than a distribution over a large number of types of defects and is likely found in a wide variety of structures from nano-scale composites to bulk structures as well as in both broad and narrow band materials from dielectrics to semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Thermal conductivity changes upon neutron transmutation of {sup 10}B doped diamond

{sup 10}B doped p-type diamond samples were subjected to neutron transmutation reaction using thermal neutron flux of 0.9 × 10{sup 13} cm{sup −2} s{sup −1} and fast neutron flux of 0.09 × 10{sup 13} cm{sup −2} s{sup −1}. Another sample of epilayer grown on type IIa (110) single crystal diamond substrate was subjected to equal thermal and fast neutron flux of 10{sup 14} cm{sup −2} s{sup −1}. The defects in the diamond samples were previously characterized by different methods. In the present work, thermal conductivity of these diamond samples was determined at room temperature by transient thermoreflectance method. The thermal conductivity change in the samples as a function of neutron fluence is explained by the phonon scattering from the point defects and disordered regions. The thermal conductivity of the diamond samples decreased more rapidly initially and less rapidly for larger neutron fluence. In addition, the thermal conductivity in type IIb diamond decreased less rapidly with thermal neutron fluence compared to the decrease in type IIa diamond subjected to fast neutron fluence. It is concluded that the rate of production of defects during transmutation reaction is slower when thermal neutrons are used. The thermal conductivity of epilayer of diamond subjected to high thermal and fast neutron fluence is associated with the covalent carbon network in the composite structure consisting of disordered carbon and sp{sup 2} bonded nanocrystalline regions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2012

Atomically localized plasmon enhancement in monolayer graphene

Plasmons in graphene can be tuned by using electrostatic gating or chemical doping, and the ability to confine plasmons in very small regions could have applications in optoelectronics, plasmonics and transformation optics. However, little is known about how atomic-scale defects influence the plasmonic properties of graphene. Moreover, the smallest localized plasmon resonance observed in any material to date has been limited to around 10 nm. Here, we show that surface plasmon resonances in graphene can be enhanced locally at the atomic scale. Using electron energy-loss spectrum imaging in an aberration-corrected scanning transmission electron microscope, we find that a single point defect can act as an atomic antenna in the petahertz (10{sup 15} Hz) frequency range, leading to surface plasmon resonances at the subnanometer scale.

36 MATERIALS SCIENCE↗