Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “MOS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 613 records · Page 34
All sourcesNASA NTRSDOE OSTI
NASA NTRS2013

The Gravity Recovery and Interior Laboratory Mission

The Gravity Recovery and Interior Laboratory (GRAIL) mission, launched in September 2011, successfully completed its Primary Science Mission in June 2012 and is currently in Extended Mission operations. Competitively selected under a NASA Announcement of Opportunity in December 2007, GRAIL is a Discovery Program mission subject to a mandatory project cost cap. The purpose of the mission is to precisely map the gravitational field of the Moon to reveal its internal structure from crust to core, determine its thermal evolution, and extend this knowledge to other planets. The mission uses twin spacecraft flying in tandem to provide the gravity map. The GRAIL Flight System, consisting of the spacecraft and payload, was developed based on significant heritage from previous missions such an experimental U.S. Air Force satellite, the Mars Reconnaissance Orbiter (MRO) mission, and the Gravity Recovery and Climate Experiment (GRACE) mission. The Mission Operations System (MOS) was based on high-heritage multimission operations developed by NASA's Jet Propulsion Laboratory and Lockheed Martin. Both the Flight System and MOS were adapted to meet the unique challenges posed by the GRAIL mission design. This paper summarizes the implementation challenges and accomplishments of getting GRAIL ready for launch. It also discusses the in-flight challenges and experiences of operating two spacecraft, and mission results.

GRAIL↗
NASA NTRS2010

The Evolvable Advanced Multi-Mission Operations System (AMMOS): Making Systems Interoperable

The Advanced Multi-Mission Operations System (AMMOS) provides a common Mission Operation System (MOS) infrastructure to NASA deep space missions. The evolution of AMMOS has been driven by two factors: increasingly challenging requirements from space missions, and the emergence of new IT technology. The work described in this paper focuses on three key tasks related to IT technology requirements: first, to eliminate duplicate functionality; second, to promote the use of loosely coupled application programming interfaces, text based file interfaces, web-based frameworks and integrated Graphical User Interfaces (GUI) to connect users, data, and core functionality; and third, to build, develop, and deploy AMMOS services that are reusable, agile, adaptive to project MOS configurations, and responsive to industrially endorsed information technology standards.

MGSS↗
NASA NTRS2016

Optical Evaluation of DMDs with UV-Grade FS, Sapphire, MgF2 Windows and Reflectance of Bare Devices

Digital Micro-mirror Devices (DMDs) have been identified as an alternative to microshutter arrays for space-based multi-object spectrometers (MOS). Specifically, the MOS at the heart of a proposed Galactic Evolution Spectroscopic Explorer (GESE) that uses the DMD as a reprogrammable slit mask. Unfortunately, the protective borosilicate windows limit the use of DMDs in the UV and IR regimes, where the glass has insufficient throughput. In this work, we present our efforts to replace standard DMD windows with custom windows made from UV-grade fused silica, Low Absorption Optical Sapphire (LAOS) and magnesium fluoride. We present reflectance measurements of the antireflection coated windows and a reflectance study of the DMDs active area (window removed). Furthermore, we investigated the long-term stability of the DMD reflectance and recoating device with fresh Al coatings.

Quijada, Manuel A.↗
NASA NTRS2016

Capacitive Trans-Impedance Amplifier Circuit with Charge Injection Compensation

A capacitive trans-impedance amplifier circuit with charge injection compensation is provided. A feedback capacitor is connected between an inverting input port and an output port of an amplifier. A MOS reset switch has source and drain terminals connected between the inverting input and output ports of the amplifier, and a gate terminal controlled by a reset signal. The reset switch is open or inactive during an integration phase, and closed or active to electrically connect the inverting input port and output port of the amplifier during a reset phase. One or more compensation capacitors are provided that are not implemented as gate oxide or MOS capacitors. Each compensation capacitor has a first port connected to a compensation signal that is a static signal or a toggling compensation signal that toggles between two compensation voltage values, and a second port connected to the inverting input port of the amplifier.

Milkov, Mihail M.↗
NASA NTRS2016

Modeling Systems-Of-Systems Interfaces with SysML

Space data systems are inherently complex. They are systems-of-systems, typically composed of spacecraft and mission operations systems (MOS) belonging to one (or more) organizations, and multi-mission communication assets belonging to other organizations. In many cases, the spacecraft contain sub-systems and instruments provided by different organizations, and MOS systems that may be developed and operated by other organizations. The point of greatest leverage in system architecting is at the interfaces. We have developed a set of methods for using SysML to model systems-of-systems and their interfaces. This paper describes how to apply this method to space data systems at a variety of levels of detail, from abstract systems and subsystems down to hardware and software components, including the details of their interfaces and protocol designs.

Shames, Peter M.↗
NASA NTRS2019

Optical Design for CETUS a Wide-Field 1.5-m Aperture UV Payload Being Studied for a NASA Probe Class Mission Study

As part of a study funded by NASA headquarters, we are developing a probe-class mission concept called the Cosmic Evolution through UV Spectroscopy (CETUS). CETUS includes a 1.5-m aperture diameter telescope with a large field of view (FOV). CETUS includes three scientific instruments: a far ultraviolet (FUV) and near ultraviolet (NUV) imaging camera (CAM); a NUV multiobject spectrograph (MOS); and a dual-channel point/slit spectrograph (PSS) in the Lyman ultraviolet (LUV), FUV, and NUV spectral regions. The large FOV three-mirror anastigmatic (TMA) optical telescope assembly (OTA) simultaneously feeds the three separate scientific instruments. That is, the instruments view separate portions of the TMA image plane, enabling parallel operation by the three instruments. The field viewed by the MOS, whose design is based on an Offner-type spectrographic configuration to provide wide FOV correction, is actively configured to select and isolate numerous field sources using a next-generation micro-shutter array. The two-channel CAM design is also based on an Offner-like configuration. The PSS performs high spectral resolution spectroscopy on unresolved objects over the NUV region with spectral resolving power, R ~ 40,000, in an echelle mode. The PSS also performs long-slit imaging spectroscopy at R ~ 20,000 in the LUV and FUV spectral regions with two aberration-corrected, blazed, holographic gratings used in a Rowland-like configuration. The optical system also includes two fine guidance sensors, and wavefront sensors that sample numerous locations over the full OTA FOV. In-flight wavelength calibration is performed by a wavelength calibration system, and flat-fielding is also performed, both using in-flight calibration sources. We describe the current optical design of CETUS and the major trade studies leading to the design.

space sensors↗
NASA NTRS1994

Total Ionizing Dose Effects on High Resolution (12-/14-bit) Analog-to-Digital Converters

This paper reports total dose radiation test results for high resolution 12-/14-bit A/D converters. Small changes in internal components can cause these devices to fail their specifications at relatively low total dose levels. Degradation of signal-to-noise ratio becomes increasingly importamt for high accuracy converters. Rebound effects in the thick-oxide MOS devices causes these responses to be different at low and high dose rates, which is a major concern for space applications.

radiation ionizing analog-to-digital converters MO↗
DOE OSTI2024

FET Junction Temperature Monitoring Using Novel On-Chip Solution

A novel junction temperature monitoring sensor is proposed and experimentally demonstrated for application in MOS-gate power devices. The sensor is created using the polycide gate electrode layer of the devices to create a temperature-sensitive resistor without any additional fabrication steps. The resistor is located on the field oxide with one end grounded at the device reference terminal to isolate it from the device current and voltage transients. It allows in-situ monitoring of the device junction temperature during active circuit operation. The technology has been implemented to monitor the junction temperature of Silicon Carbide Junction Barrier Schottky Field Effect Transistors (SiC JBSFETs) with the bi-directional FET (BiDFET).

Bidirectional switches, SiC bidirectional FET, BiD↗
DOE OSTI2021

Anisotropic Properties of Quasi‐1D In 4 Se 3 : Mechanical Exfoliation, Electronic Transport, and Polarization‐Dependent Photoresponse

Abstract Theoretical and experimental investigations of various exfoliated samples taken from layered In 4 Se 3 crystals are performed. In spite of the ionic character of interlayer interactions in In 4 Se 3 and hence much higher calculated cleavage energies compared to graphite, it is possible to produce few‐nanometer‐thick flakes of In 4 Se 3 by mechanical exfoliation of its bulk crystals. The In 4 Se 3 flakes exfoliated on Si/SiO 2 have anisotropic electronic properties and exhibit field‐effect electron mobilities of about 50 cm 2 V −1 s −1 at room temperature, which are comparable with other popular transition metal chalcogenide (TMC) electronic materials, such as MoS 2 and TiS 3 . In 4 Se 3 devices exhibit a visible range photoresponse on a timescale of less than 30 ms. The photoresponse depends on the polarization of the excitation light consistent with symmetry‐dependent band structure calculations for the most expected ac cleavage plane. These results demonstrate that mechanical exfoliation of layered ionic In 4 Se 3 crystals is possible, while the fast anisotropic photoresponse makes In 4 Se 3 a competitive electronic material, in the TMC family, for emerging optoelectronic device applications.

Vorobeva, Nataliia S.↗
DOE OSTI2022

Salt-Assisted 2H-to-1T' Phase Transformation of Transition Metal Dichalcogenides [plus supplemental information]

Phase engineering of nanomaterials (PEN) has demonstrated great potential in the fields of catalysis, electronics, energy storage and conversion, and condensed matter physics. Recently, transition metal dichalcogenides (TMDs) with unconventional metastable phases (e.g., 1T and 1T') have attracted increasing research interest due to their unique and appealing physicochemical properties. However, there is still a lack of a simple, universal, and controlled method for the preparation of large-scale and high-purity unconventional-phase TMD crystals, restricting their further fundamental study and practical applications. Here, a facile, one-step salt-assisted general strategy is reported for the controlled phase transformation of commercially available TMDs with conventional 2H phase, yielding a large amount of metastable 1T'-phase TMDs, including WS 2 , WSe 2 , MoS 2 , and MoSe 2 . It is found that the easily accessible metal salts, such as K 2 C 2 O 4 ·H 2 O, K 2 CO 3 , Na 2 CO 3 , Rb 2 CO 3 , Cs 2 CO 3 , KHCO 3 , NaHCO 3 , and NaC 2 O 4 , can be used to assist the 2H-to-1T' phase transformation, greatly simplifying the synthetic process for producing metastable 1T'-TMDs. Importantly, this method can also be used to prepare 1T'-TMD alloys, such as 1T'-WS 2x Se 2(1–x) . We report this newly developed strategy is robust and highly effective, which can also be used for the phase engineering of other materials with various polymorphs.

1T′ phase↗
DOE OSTI2023

Topology Hierarchy of Transition Metal Dichalcogenides Built from Quantum Spin Hall Layers

The evolution of the physical properties of 2D material from monolayer limit to the bulk reveals unique consequences from dimension confinement and provides a distinct tuning knob for applications. Monolayer 1T'-phase transition metal dichalcogenides (1T'-TMDs) with ubiquitous quantum spin Hall (QSH) states are ideal 2D building blocks of various 3D topological phases. However, the stacking geometry has been previously limited to the bulk 1T'-WTe 2 type. Here, the novel 2M-TMDs consisting of translationally stacked 1T'-monolayers are introduced as promising material platforms with tunable inverted bandgaps and interlayer coupling. By performing advanced polarization-dependent angle-resolved photoemission spectroscopy as well as first-principles calculations on the electronic structure of 2M-TMDs, a topology hierarchy is revealed: 2M-WSe 2 , MoS 2 , and MoSe 2 are weak topological insulators (WTIs), whereas 2M-WS 2 is a strong topological insulator (STI). Further demonstration of topological phase transitions by tunning interlayer distance indicates that band inversion amplitude and interlayer coupling jointly determine different topological states in 2M-TMDs. Finally, it is proposed that 2M-TMDs are parent compounds of various exotic phases including topological superconductors and promise great application potentials in quantum electronics due to their flexibility in patterning with 2D materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Orientated Growth of Ultrathin Tellurium by van der Waals Epitaxy

Abstract Tellurium, as an elemental van der Waals semiconductor, has intriguing anisotropic physical properties owing to its inherent 1D crystal structure. To exploit the anisotropic and thickness‐dependent behavior, it is important to realize orientated growth of ultrathin tellurium. Here, van der Waals epitaxial growth of Te on the surface of 2D transition metal dichalcogenides is systematically investigated. Orientated growth of Te with a thickness down to 5 nm is realized on three‐fold symmetric substrates (WSe 2 , WS 2 , MoSe 2 , and MoS 2 ), where the atomic chains of Te are aligned with the armchair directions of substrates. 1D/2D moiré superlattices are observed for the Te/WSe 2 heterostructure. This method is extended to the growth of SeTe alloys, providing flexibility for band engineering. Finally, growth of textured Te film is demonstrated on the lower‐symmetry surface of WTe 2 .

Zhao, Chunsong↗
DOE OSTI2021

0D Nanocrystals as Light‐Driven, Localized Charge‐Injection Sources for the Contactless Manipulation of Atomically Thin 2D Materials

A contactless charge‐injection scheme that allows the local and quasi‐permanent manipulation of atomically thin 2D materials, such as monolayer (1L‐)MoS 2 , over spatial extents of several tens of micrometers, is reported. The possibility to precisely position and localize the charge‐injection source to the micrometer scale post‐fabrication allows the investigation of local unperturbed electronic structure of the 2D material. Thanks to this novel approach, the important impact of sample inhomogeneity on the charge‐carrier percolation that occurs over the entire extent of the 2D flake and proliferates up to 40 μm away from the localized charge injection is elucidated. The apparent driving force for carrier relocation is the initial inhomogeneous electronic landscape of the 2D material. These studies demonstrate that local and contactless charge injection with submicrometer precision delivers an alternative route for charge injection and indicates that local 2D material electronic structure can serve as a key element for novel nanoscale device design.

Ghini, Michele↗
DOE OSTI2021

Deep Learning for Rapid Analysis of Spectroscopic Ellipsometry Data

High‐throughput experimental approaches to rapidly develop new materials require high‐throughput data analysis methods to match. Spectroscopic ellipsometry is a powerful method of optical properties characterization, but for unknown materials and/or layer structures the data analysis using traditional methods of nonlinear regression is too slow for autonomous, closed‐loop, high‐throughput experimentation. Herein, three methods (termed spectral, piecewise, and pointwise) of spectroscopic ellipsometry data analysis based on deep learning are introduced and studied. After initial training, the incremental time for inferring optical properties can be a thousand times faster than traditional methods. Results for multilayer sample structures with optically isotropic materials are presented, appropriate for high‐throughput studies of thin films of phase‐change materials such as GeSbTe (GST) alloys. Results for studies on highly birefringent layered materials are also presented, exemplified by the transition metal dichalcogenide MoS 2 . How the materials under test and the experimental objectives may guide the choice of analysis methods are discussed. The utility of our approach is demonstrated by analyzing data measured on a composition spread of GeSbTe phase‐change alloys containing 177 distinct compositions, and identifying the composition with optimal phase‐change figure of merit in only 1.4 s of analysis time.

Li, Yifei↗
DOE OSTI2024

Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field–Effect Transistors

Analytical calculations corroborated by the finite element modeling show that thin films of Van der Waals ferrielectrics covered by a 2D-semiconductor are promising candidates for the controllable reduction of the dielectric layer capacitance due to the negative capacitance (NC) effect emerging in the thin films. The NC state is conditioned by energy-degenerated poly-domain states of the ferrielectric polarization induced in the films under incomplete screening conditions in the presence of a dielectric layer. Calculations performed for the FET-type heterostructure “ferrielectric CuInP 2 S 6 film—2D-MoS 2 single-layer—SiO 2 dielectric layer” reveal the pronounced size effect of the multilayer capacitance. Derived analytical expressions for the electric polarization and multilayer capacitance allow to predict the thickness range of the dielectric layer and ferrielectric film for which the NC effect is the most pronounced in various Van der Waals ferrielectrics, and the corresponding subthreshold swing becomes much less than the Boltzmann's limit. Obtained results can be useful for the size and temperature control of the NC effect in the steep-slope ferrielectric FETs.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Direct‐Write Printed Contacts to Layered and 2D Materials

Advancements in fabrication methods have shaped new computing device technologies. Among these methods, depositing electrical contacts to the channel material is fundamental to device characterization. Novel layered and 2D materials are promising for next-generation computing electronic channel materials. Direct-write printing of conductive inks is introduced as a surprisingly effective, significantly faster, and cleaner method to contact different classes of layered materials, including graphene (semi-metal), MoS 2 (semiconductor), Bi-2212 (superconductor), and Fe 5 GeTe 2 (metallic ferromagnet). Based on the electrical response, the quality of the printed contacts is comparable to what is achievable with resist-based lithography techniques. These devices are tested by sweeping gate voltage, temperature, and magnetic field to show that the materials remain pristine post-processing. This work demonstrates that direct-write printing is an agile method for prototyping and characterizing the electrical properties of novel layered materials.

2D materials↗
DOE OSTI2025

Materials Selection Principles for Designing Electro‐Thermal Neurons

Artificial neurons exhibiting volatile threshold switching and action potential‐like oscillations are crucial for brain‐inspired computing. While Complimentary Metal‐Oxide‐Semiconductor (CMOS)‐based strategies require hundreds of transistors to simulate each neuron, neuronal oscillations arise spontaneously in individual electro‐thermal devices due to nonlinearities like the Mott transition in VO 2 . Despite improved understanding of the physics, quantitative connections between neuronal performance and material properties remain under‐explored, preventing predictive neuron design and rational materials selection. In this work, a physics‐aware forward design methodology is developed for interrogating a wide palette of materials with properties varying by orders of magnitude, and their performance (high frequency, high dynamical reconfigurability and low power) under external circuit and device geometry constraints is assessed. The space of viable materials is identified to be much larger than previously recognized, with candidates from a range of materials classes, including Ge, GaP and MoS 2 . CMOS‐compatible performance (such as 100 GHz oscillating frequencies) can be achieved with CMOS‐compatible node sizes (≈10 nm). Finally, combinations of material properties yielding desired neuronal performance under uncertain design constraints are considered. This work solidifies forward design principles for electro‐thermal neuron devices, a necessary pre‐condition for inverse design from desired neuronal performance to required materials properties.

compact model↗