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At least 613 records · Page 34

Distributed multiport memory architecture

A multiport memory architecture is diclosed for each of a plurality of task centers connected to a command and data bus. Each task center, includes a memory and a plurality of devices which request direct memory access as needed. The memory includes an internal data bus and an internal address bus to which the devices are connected, and direct timing and control logic comprised of a 10-state ring counter for allocating memory devices by enabling AND gates connected to the request signal lines of the devices. The outputs of AND gates connected to the same device are combined by OR gates to form an acknowledgement signal that enables the devices to address the memory during the next clock period. The length of the ring counter may be effectively lengthened to any multiple of ten to allow for more direct memory access intervals in one repetitive sequence. One device is a network bus adapter which serially shifts onto the command and data bus, a data word (8 bits plus control and parity bits) during the next ten direct memory access intervals after it has been granted access. The NBA is therefore allocated only one access in every ten intervals, which is a predetermined interval for all centers. The ring counters of all centers are periodically synchronized by DMA SYNC signal to assure that all NBAs be able to function in synchronism for data transfer from one center to another.

Kohl, W. H.↗

Colossal Electroresistive Properties Of CSD Grown Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3} Films For Nonvolatile Memory Applications

Colossal electroresistance effects upon application of electric field in perovskite oxide Pr{sub 0.7}Ca{sub 0.3}MnO{sub 3}(PCMO) thin films, which is a promising candidate for resistance random access memory (RRAM) device have been investigated. Nanocrystalline PCMO films were grown on SiO{sub 2} substrates by chemical solution deposition and crystallized at 700 deg. C under different gas atmospheres. Four terminal current voltage characteristics of Ag/PCMO/Ag planar geometry exhibited a sharp transition from a low resistance state (LRS) to a high resistance state (HRS) with a resistance switching ratio of as high as 1100% at room temperature. Nonvolatility and high retention was confirmed by electric pulse induced resistive switching measurements. The resistance switching ratios were found to depend on the annealing conditions, suggesting an interaction between the nonlattice oxygen and oxygen vacancies and/or the cationic vacancy.

36 MATERIALS SCIENCE↗

Synthesis and characterization of monodisperse, mesoporous, and magnetic sub-micron particles doped with a near-infrared fluorescent dye

Recently, multifunctional silica nanoparticles have been investigated extensively for their potential use in biomedical applications. We have prepared sub-micron monodisperse and stable multifunctional mesoporous silica particles with a high level of magnetization and fluorescence in the near infrared region using an one-pot synthesis technique. Commercial magnetite nanocrystals and a conjugated-NIR-dye were incorporated inside the particles during the silica condensation reaction. The particles were then coated with polyethyleneglycol to stop aggregation. X-ray diffraction, N{sub 2} adsorption analysis, TEM, fluorescence and absorbance measurements were used to structurally characterize the particles. These mesoporous silica spheres have a large surface area (1978 m{sup 2}/g) with 3.40 nm pore diameter and a high fluorescence in the near infrared region at {lambda}=700 nm. To explore the potential of these particles for drug delivery applications, the pore accessibility to hydrophobic drugs was simulated by successfully trapping a hydrophobic ruthenium dye complex inside the particle with an estimated concentration of 3 wt%. Fluorescence imaging confirmed the presence of both NIR dye and the post-grafted ruthenium dye complex inside the particles. These particles moved at approximately 150 {mu}m/s under the influence of a magnetic field, hence demonstrating the multifunctionality and potential for biomedical applications in targeting and imaging. - Graphical Abstract: Hydrophobic fluorescent Ruthenium complex has been loaded into the mesopores as a surrogate drug to simulate drug delivery and to enhance the multifunctionality of the magnetic NIR emitting particles. Highlights: > Monodisperse magnetic mesoporous silica particles emitting in the near infrared region are obtained in one-pot synthesis. > We prove the capacity of such particles to uptake hydrophobic dye to mimic drug loading. > Loaded fluorescent particles can be moved under a magnetic field in a microfluidic device.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

EMERGENCE OF PROTOPLANETARY DISKS AND SUCCESSIVE FORMATION OF GASEOUS PLANETS BY GRAVITATIONAL INSTABILITY

We use resistive magnetohydrodynamical (MHD) simulations with the nested grid technique to study the formation of protoplanetary disks around protostars from molecular cloud cores that provide the realistic environments for planet formation. We find that gaseous planetary-mass objects are formed in the early evolutionary phase by gravitational instability in regions that are decoupled from the magnetic field and surrounded by the injection points of the MHD outflows during the formation phase of protoplanetary disks. Magnetic decoupling enables massive disks to form and these are subject to gravitational instability, even at {approx}10 AU. The frequent formation of planetary-mass objects in the disk suggests the possibility of constructing a hybrid planet formation scenario, where the rocky planets form later under the influence of the giant planets in the protoplanetary disk.

79 ASTRONOMY AND ASTROPHYSICS↗

An FPGA-Based Test-Bed for Reliability and Endurance Characterization of Non-Volatile Memory

Memory technologies are divided into two categories. The first category, nonvolatile memories, are traditionally used in read-only or read-mostly applications because of limited write endurance and slow write speed. These memories are derivatives of read only memory (ROM) technology, which includes erasable programmable ROM (EPROM), electrically-erasable programmable ROM (EEPROM), Flash, and more recent ferroelectric non-volatile memory technology. Nonvolatile memories are able to retain data in the absence of power. The second category, volatile memories, are random access memory (RAM) devices including SRAM and DRAM. Writing to these memories is fast and write endurance is unlimited, so they are most often used to store data that change frequently, but they cannot store data in the absence of power. Nonvolatile memory technologies with better future potential are FRAM, Chalcogenide, GMRAM, Tunneling MRAM, and Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) EEPROM.

Rao, Vikram↗

Reduced Coercive Field in BiFeO3 Thin Films through Domain Engineering

The bismuth ferrite (BiFeO3) material offers a comprehensive package of multifunctionality. In addition to the multiferroic behavior, i.e. coexistence of electric and magnetic orderings,[1] it also exhibits photovoltaic effect, [2] metal-insulator transition,[3] electric modulation of conduction,[4] and terahertz radiation emission.[5] The possibility of joint control of electric, magnetic, and optical properties provides several degrees of freedom to design exotic devices. It is a green energy material in the sense that it is lead-free and energy-efficient due to cryogen-less functionality. Therefore, a wide variety of applications in terms of sensors, memories and spintronic devices are foreseen.[6] However, the incipient lower value of magneto-electric coupling has raised skepticism regarding its multiferroic capabilities and allied applications.[6] Nevertheless, the highest value of ferroelectric polarization (~ 100 C.cm-2) is very promising for next generation ferroelectric random access memory devices.

Shelke, Vilas K↗

Communication device with persistent configuration and verification

The present disclosure pertains to systems and methods for establishing communication with a remote communication device in a software defined network (SDN) during time when an SDN controller is unavailable. In one embodiment, a local communication device may be configured to receive a plurality of data flows from an SDN controller and to store the plurality of data flows in a persistent data memory. The device may generate a unique identifier for the local communication device that is transmitted to a remote communication device. Following a disruption the results in the SDN controller being unavailable, the local communication device may recover into a default configured state based on the plurality of data flows in the persistent data memory. The local communication device may then transmit the unique identifier to the remote communication device after the disruption to begin a process of reestablishing communication with the remote communication device.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Deterministic Arbitrary Switching of Polarization in a Ferroelectric Thin Film

Ferroelectrics have been used as memory storage devices, with an upper bound on the total possible memory levels generally dictated by the number of degenerate states allowed by the symmetry of the ferroelectric phase. Here, we introduce a new concept for storage wherein the polarization can be rotated arbitrarily, effectively decoupling it from the crystallographic symmetry of the ferroelectric phase on the mesoscale. By using a Bi5Ti3FeO15-CoFe2O4 film and via Band-Excitation Piezoresponse Force Microscopy, we show the ability to arbitrarily rotate polarization, create a spectrum of switched states, and suggest the reason for the polarization rotation is an abundance of sub-50nm nanodomains. Transmission electron microscopy-based strain mapping confirms significant local strain undulations imparted on the matrix by the CoFe2O4 inclusions, which causes significant local disorder. These experiments point to controlled tuning of polarization rotation in a standard ferroelectric, and hence the potential to greatly extend the attainable densities for ferroelectric memories.

Ferroelectric↗

Low magnetic damping and large negative anisotropic magnetoresistance in half-metallic Co 2-x Mn 1+x Si Heusler alloy films grown by molecular beam epitaxy

Co 2-x Mn 1+x Si films with various composition x were epitaxially grown using molecular beam epitaxy (MBE). High crystallinity and atomic ordering in the prepared Co 2-x Mn 1+x Si films were observed, and their magnetic damping and anisotropic magnetoresistance (AMR) effect were systematically investigated. An ultra-low magnetic damping constant of 0.0007 was obtained in the Co 2-x Mn 1+x Si film with a valence electron number (NV) of about 29.0. Additionally, a relatively large negative AMR effect was observed in the Co 2-x Mn 1+x Si films that had a N V of about 29.0. This low damping and the large negative AMR effect indicate that epitaxial Co 2-x Mn 1+x Si films with high atomic ordering grown by MBE possess a high-spin polarization. Half-metals have potential for enhancing the performance of various kinds of spintronic devices, such as magnetic sensors and magnetic random access memory (MRAM) devices, because the conduction electrons are completely spin-polarized due to the Fermi level (EF) being in the energy gap of one of the spin channels. Among the half-metals, Co-based Heusler alloys are expected to show half-metallic properties at room temperature due to their high Curie temperature. In the past decade, high tunnel magnetoresistance (TMR) and current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) have been experimentally demonstrated using Co-based Heusler alloy electrodes. Furthermore, further improvement of their half-metallic properties is required to obtain improved performance in magnetic tunnel junctions (MTJs) and CPP-GMR devices.

36 MATERIALS SCIENCE↗

Quality of service for input/output memory management unit

A data processing system includes a memory, a group of input/output (I/O) devices, an input/output memory management unit (IOMMU). The IOMMU is connected to the memory and adapted to allocate a hardware resource from among a group of hardware resources to receive an address translation request for a memory access from an I/O device. The IOMMU detects address translation requests from the plurality of I/O devices. The IOMMU reorders the address translation requests such that an order of dispatching an address translation request is based on a policy associated with the I/O device that is requesting the memory access. The IOMMU selectively allocates a hardware resource to the input/output device, based on the policy that is associated with the I/O device in response to the reordering.

Basu, Arkaprava↗

Oleate Coated Magnetic Cores Based on Magnetite, Zn Ferrite and Co Ferrite Nanoparticles - Preparation, Physical Characterization and Biological Impact on Helianthus Annuus Photosynthesis

Sodium oleate was used as coating shell for magnetite, Zn ferrite and Co ferrite powders to stabilize them in the form of aqueous magnetic suspensions. The physical characterization was carried out by applying X-ray diffraction and magnetization measurements. Both crystallite size and magnetic core diameter ranged between 7 and 11 nm. The influence of magnetic nanoparticle suspensions (corresponding to magnetic nanoparticle levels of 10{sup -14}-10{sup -15}/cm{sup 3}) on sunflower seedlings was studied considering the changes in the photosynthesis pigment levels. Similar responses were obtained for magnetite and cobalt ferrite nanoparticle treatment consisting in the apparent inhibition of chlorophyll biosynthesis while for zinc ferrite nanoparticles some concentrations seemed to have stimulatory effects on the chlorophylls as well as on the carotene levels. But the chlorophyll ratio was diminished in the case of all three types of magnetic nanoparticles meaning their slight negative effect on the light harvesting complex II (LHC II) from the chloroplast membranes and consequently on the photosynthesis efficiency.

36 MATERIALS SCIENCE↗

Sub-10 nm low current resistive switching behavior in hafnium oxide stack

In this letter, a tip-induced cell relying on the conductive atomic force microscope is proposed. It is verified as a referable replica of an integrated resistive random access memory (RRAM) device. On the basis of this cell, the functionality of sub-10 nm resistive switching is confirmed in hafnium oxide stack. Moreover, the low current switching behavior in the sub-10 nm dimension is found to be more pronounced than that of a 50 × 50 nm{sup 2} device. It shows better ON/OFF ratio and low leakage current. The enhanced memory performance is ascribed to a change in the shape of the conductive filament as the device dimensions are reduced to sub-10 nm. Therefore, device downscaling provides a promising approach for the resistance optimization that benefits the RRAM array design.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Octonary resistance states in La 0.7 Sr 0.3 MnO 3 /BaTiO 3 /La 0.7 Sr 0.3 MnO 3 multiferroic tunnel junctions

General drawbacks of current electronic/spintronic devices are high power consumption and low density storage. A multiferroic tunnel junction (MFTJ), employing a ferroelectric barrier layer sandwiched between two ferromagnetic layers, presents four resistance states in a single device and therefore provides an alternative way to achieve high density memories. Here, an MFTJ device with eight nonvolatile resistance states by further integrating the design of noncollinear magnetization alignments between the ferromagnetic layers is demonstrated. Through the angle-resolved tunneling magnetoresistance investigations on La 0.7 Sr 0.3 MnO 3 /BaTiO 3 /La 0.7 Sr 0.3 MnO 3 junctions, it is found that, besides collinear parallel/antiparallel magnetic configurations, the MFTJ shows at least two other stable noncollinear (45° and 90°) magnetic configurations. As a result, combining the tunneling electroresistance effect caused by the ferroelectricity reversal of the BaTiO 3 barrier, an octonary memory device is obtained, representing potential applications in high density nonvolatile storage in the future.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effects of Interface Induced Natural Strains on Magnetic Properties of FeRh

FeRh is a unique alloy which shows temperature dependent phase transition magnetic properties. The lattice parameter (a) of this CsCl-type (B2) structure is 4.1712 Å. It undergoes a first order transition from antiferromagnetic (AFM) to ferromagnetic (FM) order at around 370K and hysteretic behavior while cooling and heating. This meta-magnetic transition of FeRh is accompanied by an isotropic expansion in the unit cell volume, which indicates strong coupling between magnetic and structural properties of FeRh. Consequently, the magnetic and transport properties, such as magnetoresistance (MR), are changed during the transition. Due to its unique thermo-magnetic behaviors, FeRh is very important for future spintronic devices. The structure could be applicable for MR devices such as memory, sensors, and many other applications. It is critical to understand how to systematically influence phase transition of FeRh from naturally applied strains. Here, we investigate magnetic properties of FeRh in different strain environments induced by the substrates with different lattice parameters. The study was performed using synchrotron radiation, temperature dependent magnetometry, and magnetic scanning probe microscopy in addition to Landau theory calculations. We found that the naturally induced strains could modulate the magnetic phase locally and globally. The presence of the segments from the nucleation of the ferromagnetic domains, with a very thin layer in the antiferromagnetic matrix and the domain growth, were observed gradually. Using the systematic phenomena, it could be used for immediate applications in the future generation of phase change random access memory (PC-RAM) devices.

36 MATERIALS SCIENCE↗

A reactive magnetron sputtering route for attaining a controlled core-rim phase partitioning in Cu{sub 2}O/CuO thin films with resistive switching potential

The achievement of a reproducible and controlled deposition of partitioned Cu{sub 2}O/CuO thin films by techniques compatible with ULSI processing like reactive magnetron sputtering has been reported as an outstanding challenge in the literature. This phase partitioning underlies their performance as reversible resistive memory switching devices in advanced microelectronic applications of the future. They are currently fabricated by thermal oxidation and chemical methods. We have used a combination of an understanding from plasma chemistry, thermo-kinetics of ions, and rf power variation during deposition to successfully identify a processing window for preparing partitioned Cu{sub 2}O/CuO films. The production of a core rich Cu{sub 2}O and surface rich Cu{sub 2}O/CuO mixture necessary for oxygen migration during resistive switching is confirmed by XRD peaks, Fourier transform infra red Cu (I)-O vibrational modes, XPS Cu 2P{sub 3/2} and O 1S peak fitting, and a comparison of satellite peak ratio's in Cu 2P{sub 3/2} fitted peaks. We are proposing based on the findings reported in this paper that an XPS satellite peak intensity(I{sub s}) to main peak intensity ratio (I{sub m}) {<=} 0.45 as an indicator of a core rich Cu{sub 2}O and surface rich Cu{sub 2}O/CuO formation in our prepared films. CuO is solely responsible for the satellite peaks. This is explained on the basis that plasma dissociation of oxygen will be limited to the predominant formation of Cu{sub 2}O under certain plasma deposition conditions we have identified in this paper, which also results in a core-rim phase partitioning. The deposited films also followed a Volmer-Weber columnar growth mode, which could facilitate oxygen vacancy migration and conductive filaments at the columnar interfaces. This is further confirmed by optical transmittance and band-gap measurements using spectrophotometry. This development is expected to impact on the early adoption of copper oxide based resistive memory electronic switching devices in advanced electronic devices of the future. The relative abundance of copper is another major complementary driver for the interest in copper oxide films.

36 MATERIALS SCIENCE↗

Dispatch Manager for NEML2 Constitutive Model Calculations Embedded in MOOSE

This report describes the extended capabilities of the NEML2 constitutive modeling library, including a flexible and efficient work dispatching system designed to leverage both CPU and GPU resources. This enhancement addresses one of the primary computational challenges in large-scale simulations: the ability to distribute and execute batches of material model evaluations across heterogeneous computing devices. The new dispatch system introduces a modular set of dispatcher and scheduler classes that coordinate the flow of data and execution between devices. The dispatcher is responsible for efficiently packaging work, managing device-specific memory operations, and synchronizing results. This modularity allows for extensibility, making it straightforward to integrate additional computing backends in the future. From an implementation standpoint, the dispatcher system interfaces seamlessly with NEML2's existing models. They handle device-aware tensor operations, optimize memory transfers, and support asynchronous execution when applicable. This design ensures that batches of material points can be evaluated concurrently, substantially improving throughput compared to previous single-device or serial implementations. These improvements not only enhance the raw performance of NEML2 but also improve its usability in multiscale and high-fidelity simulations, where the simultaneous evaluation of large material point batches is critical. Benchmarks included in the report demonstrate the system’s scalability, highlighting its effectiveness when leveraging modern GPU architectures.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗