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At least 613 records · Page 34
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Effect of Carbon on Void Nucleation in Iron

The study reports the significance of carbon presence in affecting void nucleation in Fe. Without carbon, void nucleation rates decrease gradually at high temperatures but remain significantly high and almost saturated at low temperatures. With carbon present, even at 1 atomic parts per million, void nucleation rates show a low-temperature cutoff. With higher carbon levels, the nucleation temperature window becomes narrower, the maximum nucleation rate becomes lower, and the temperature of maximum void nucleation shifts to a higher temperature. Fundamentally, this is caused by the change in effective vacancy diffusivity due to the formation of carbon-vacancy complexes. The high sensitivity of void nucleation to carbon comes from the high sensitivity of void nucleation to the vacancy arrival rate in a void. The void nucleation is calculated by first obtaining the effective vacancy diffusivity considering the carbon effect, then calculating the defect concentration and defect flux change considering both carbon effects and pre-existing dislocations, and finally calculating the void nucleation rate based on the recently corrected homogeneous void nucleation theory. The study is important not only in the fundamental understanding of impurity effects in ion/neutron irradiation but also in alloy engineering for judiciously introducing impurities to increase swelling resistance, as well as in the development of simulation and modeling methodologies applicable to other metals.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Microchemical evolution of irradiated additive-manufactured HT9

The microstructural responses under 5 MeV Fe2 + single-ion-beam irradiation of three conditions of additive-manufactured (AM) HT9 steel using a powder-based directed energy deposition (DED) technique with and without postbuild heat treatments were investigated. Besides the observed dislocation loop formation and the absence of cavities at the irradiation condition of 50 dpa at 460 °C, Ni/Si/Mn-rich precipitates are found to form in all three conditions of AM-HT9, whereas Cu-rich clusters that arise from Cu uptake from the DED process are only observed in the heat-treated conditions, and not in the as-built (ASB) condition. Coprecipitation of the Cu- and Ni/Si/Mn-rich clusters occur near defect sinks such as line dislocations and grain boundaries in the heat-treated AM-HT9. The variation in microchemical evolution can be directly linked to the starting sink strength of the three AM-HT9 conditions, and the ASB condition with higher sink strength suppressed the responses observed in the postbuild heat-treated specimens.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

Heavy ion irradiation effects on CrFeMnNi and AlCrFeMnNi high entropy alloys

Co-free but Al-included medium/high entropy alloys (M/HEAs) have gained increasing interests due to their lower cost and the potential to tune the multi-phase microstructure. The irradiation response of two Co-free HEAs, face-centered cubic (FCC) CrFeMnNi with limited Cr enriched α' phase and body-centered cubic (BCC) AlCrFeMnNi with B2s phase and nanoprecipitates were explored. Ion irradiations using 5 MeV Fe 2+ ions were performed at 500°C to a peak fluence of 50 and/or 100 displacements per atom (dpa). In dual-phase AlCrFeMnNi, there was no significant radiation induced segregation or chemical intermixing at the coherent matrix (FeCrMn-rich)/second phase (AlNi-rich) boundaries. In CrFeMnNi, limited voids were only detected at the peak damage location of ~ 50 dpa. On the other hand, voids were widely distributed in AlCrFeMnNi: under 50 and 100 dpa irradiation conditions, voids were found with larger dimension and denser distribution in the FeCrMn-rich matrix, smaller and slightly lower density in an AlNi-rich second phase. In addition, the diameter of the FeCMn-rich nanoprecipitates didn't reveal any tendency of dissolution or growth. This is correlated with their superior structural stability against irradiation. Significant radiation-induced hardening (increases from 3.8 ± 0.2 GPa to 4.7 ± 0.6 GPa) was measured in CrFeMnNi, but only ~ 4% hardness increase (from 7.4 ± 0.8 GPa to 7.7 ± 0.4 GPa) was noted in AlCrFeMnNi. Finally, in addition to the radiation-induced defects, such as voids, dislocation loops and point defects, other factors, such as chemical short-range ordering may play an important role.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Migration of Ga vacancies and interstitials in β – Ga 2 O 3

Pathways and energy barriers for the migration of Ga vacancies (V Ga ) and Ga interstitials (Ga i ) in β–Ga 2 O 3 are explored using hybrid functional calculations and the nudged elastic band method. Considering β–Ga 2 O 3 as primarily being an n-type semiconductor, we focus on defect charge states relevant under such conditions: $V^{3 –}_{Ga}$, Ga$^{3+}_{i}$, and Ga$^{+}_{i}$. Notably, we describe a mechanism by which V Ga can transform between its different split configurations. In all cases, the intermediate state consists of a vacancy split between three Ga sites—a three-split vacancy—which enables passage over a significantly lower energy barrier. This is because it avoids the unfavorable simple vacancy at the tetrahedral Ga site. The proposed mechanism lowers the overall barrier for $V^{3–}_{Ga}$ diffusion along the [001] crystal direction from 1.73 to 0.97 eV, whereas the 2.08 eV barrier for the [100] and [010] directions is unaffected. For Ga$^{3+}_{i}$, we obtain similar overall migration barriers of 0.72, 0.80, and 1.02 eV for the [010], [001], and [100] directions, respectively. Ga$^{+}_{i}$ exhibits a strong preference for diffusion within the large eight-sided channel; the overall migration barrier is 0.92 eV for the [010] direction, and 2.16 eV for the [001] and [100] directions. The limiting step for the two latter directions involves ionization of Ga$^{+}_{i}$ followed by a jump to an adjacent large eight-sided channel as Ga$^{3+}_{i}$. Finally, our results are discussed in light of experimental observations of thermally activated recovery processes in irradiated material.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Cluster dynamics modeling of Mn-Ni-Si precipitates coupled with radiation-induced segregation in low-Cu reactor pressure vessel steels

Formation of precipitates enhanced or induced by irradiation causes hardening and embrittlement of nuclear structural materials. Post-irradiation microstructure characterization of reactor pressure vessel (RPV) steels has shown that precipitation can be strongly associated with radiation-induced segregation (RIS) of solutes on dislocations. However, RIS and precipitation have not been coupled in previous precipitation modeling of RPV steels. Here in this study, a new hybrid and spatially-dependent precipitation model is developed that couples cluster dynamics with RIS, providing an unique way to account for concurrent evolution of heterogeneous cluster densities as well as solute and point defect concentration profiles. The model is applied to study the segregation of Mn, Ni, and Si on dislocations and heterogeneous nucleation of Mn-Ni-Si rich precipitates (MNSPs) in a low-Cu RPV steel. The result shows that the onset of MNSP nucleation on dislocations occurs at the fluence of 2 x 10 23 n.m -2 . The number density and mean radius can reach ~ 10 24 m -3 and 1-2 nm at high fluence, respectively. These observations suggest that the role of RIS and heterogeneous nucleation can be significant for RPV steels under a high fluence of irradiation. Results of simulations adopting various dose rates and dislocation densities show an increased fraction of MNSPs on dislocations at the condition of low dose rate, high dislocation density, and high fluence.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Failure analysis of field-failed bypass diodes

Defective bypass diodes are often found as the largest factor leading to power loss in solar modules. Here, we report on failure mechanisms by investigating shunted bypass diodes from a rooftop installation, using a combination of multiple characterizations including current–voltage analysis, thermal-runaway testing, X-ray computed tomography, lock-in thermography, focused ion-beam cross-section imaging, chemical decapsulation, optical microscopy, and scanning electron microscopy with energy-dispersive X-ray spectroscopy. Differing from static discharge typically associated with lightning strikes on modules, we found diode failure by the mechanism of thermal damage under continuous, long-term overstress in forward bias. Our conclusion is based on evidence of energy dissipated—the small to medium extent of melt-through on the Schottky diode face. The diode failure shows distortions or roughening of the Schottky diode metal-semiconductor interface with the die attach, and some failures are accompanied by die-attach solder melting. We propose that nonuniform irradiance on the modules caused diode shunting due to extended periods of heat dissipation in the modules, because modules in this string were placed in two different orientations. In contrast, a second parallel module string of the same module type on the same rooftop with a unique plane of array did not show any diode failures. The thermal damage failure of melt-through was caused by the long-term current generated by overstressing of diodes that may have had crystalline and impurity defects.

14 SOLAR ENERGY↗
DOE OSTI2025

Interpreting experimental measurements of helium bubbles using stochastic cluster dynamics models of heterogeneous nucleation and growth in irradiated ferritic alloys

Among a number of other advantageous features, ferritic/martensitic steels are being considered as fusion reactor structural materials due to their low intrinsic swelling under irradiation. However, under high-energy neutron irradiation, He produced through (n, α) reactions stabilizes vacancy clusters, which then act as seeds for bubble formation and growth, negating the intrinsic swelling resistance of these alloys. Standard models of irradiation damage accumulation and microstructural evolution consider homogeneous nucleation as the basis for bubble formation and growth. However, this generally does not explain the large bubble densities and sizes observed experimentally under a number of different conditions. Here, we propose a more realistic physical model of bubble nucleation, formation, and growth designed to capture recent experimental measurements of He-bubble formation and evolution during co-implantation of He and Fe ions in model ferritic alloys. We find that experimental results are explained only when the following three features are considered simultaneously: (i) heterogeneous nucleation of He-vacancy bubbles at defect sinks (e.g., dislocations, grain boundaries, and second-phase precipitates), (ii) nucleation and growth of bubbles via the ‘trap mutation’ mechanism (i.e., spontaneous production of Frenkel pairs due to absorption of He atoms), and (iii) transition from a growth-limited, He-stabilized bubble regime to a ‘runaway’ void-type growth scenario. The model is implemented into a stochastic cluster dynamics framework that takes advantage of cluster size grouping methods to accelerate the simulations, allowing us to reach 10 dpa of simulated irradiated dose, and to capture cluster sizes in excess of 20 nm. Further, a careful extrapolation exercise conducted assuming classical nucleation theory leads to excellent agreement with the experimental measurements at 50 dpa of irradiation.

36 MATERIALS SCIENCE↗
DOE OSTI2020

In-situ re-crystallization of heavily-irradiated Gd 2 Ti 2 O 7

Gadolinium titanate (Gd 2 Ti 2 O 7 , or GTO) and other lanthanide pyrochlores are interesting candidates for actinide waste disposal and fast ion conduction because the relevant material properties are intimately dependent on local cation structure. Therefore, a deep understanding of the kinetics associated with cation ordering and disordering is required if such material properties are to be tuned for specific device designs. To this end, single crystals of GTO were irradiated with 190 keV helium ions to a total fluence of 1 × 10 17 ions/cm 2 , amorphizing the sample surface to a depth of ~1 μm and resulting in significant He bubble accumulation. FIB lamellae lifted out from the irradiated sections were examined during heat treatment in the (scanning) transmission electron microscope. Two distinct stages of the re-crystallization of the amorphized material were observed. The material near the end of the ions’ range transformed first and with the same orientation as the pristine material. This was due to the close proximity of the pristine material and the presence of small defect fluorite seeds, but the propagation of this growth front was frustrated by the large pores (formerly bubbles) in the He accumulation layer. This was followed by heterogeneous nucleation of new crystallites at random orientations at the top of the He accumulation layer, which is attributed to the high surface area associated with the many small He bubbles in that region. Finally, it is inferred that the kinetics of grain growth in this material are significantly faster than the kinetics of grain nucleation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Molecular-resolution imaging of ice crystallized from liquid water by cryogenic liquid-cell TEM

Despite the ubiquity of ice, a molecular-resolution image of nanoscopic defects or microstructures in ice crystallized from liquid water has never been obtained. This is mainly due to the difficulties in preparing and preserving crystalline ice samples that can survive under high-resolution imaging conditions. Here, we report the stabilization and Å-resolution electron imaging of ice Ih crystallized from liquid water by developing cryogenic liquid-cell transmission electron microscopy (CRYOLIC-TEM). We combine lattice mapping with molecular dynamics simulations to reveal that ice formation is highly tolerant to nanoscale defects such as misoriented subdomains and trapped gas bubbles, which are stabilized by molecular-scale structural motifs. Importantly, bubble surfaces adopt low-energy nanofacets and create negligible strain fields in the surrounding crystal. These bubbles can dynamically nucleate, grow, migrate, dissolve, and coalesce under electron irradiation and be monitored in situ near a steady state. This work improves our understanding of water crystallization behaviors at a molecular spatial resolution.

Materials science↗
DOE OSTI2022

Magnetic Imaging with Spin Defects in Hexagonal Boron Nitride

Optically active spin defects hosted in hexagonal boron nitride (ℎ-BN) are promising candidates for the development of a two-dimensional (2D) quantum sensing unit. Here, we demonstrate quantitative magnetic imaging with ℎ-BN flakes doped with negatively charged boron-vacancy ($V^{-}_{B}$) centers through neutron irradiation. As a proof-of-concept, we image the magnetic field produced by Cr⁢Te 2 , a van der Waals ferromagnet with a Curie temperature slightly above 300 K. Compared to other quantum sensors embedded in 3D materials, the advantages of the ℎ-BN-based magnetic sensor described in this work are its ease of use, high flexibility, and, more importantly, its ability to be placed in close proximity to a target sample. Further, such a sensing unit will likely find numerous applications in 2D materials research by offering a simple way to probe the physics of van der Waals heterostructures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Radiation Response of Low Dimensional Carbon Systems

The project is aimed at understanding the fundamentals of radiation response of low dimensional carbon systems and irradiation-induced mechanical property changes, with a focus on the unique phenomena caused by their geometry, boundary, and quantum size effects. In comparison with their bulk counterparts (graphite), radiation responses of low-dimensional carbon systems are substantially different. The differences exist at almost every stage of defect development, namely, displacement creation, damage cascade, thermal spike formation defect recombination, defect clustering, and structural reconstruction. Many traditional concepts in ion-solid interaction theory do not apply at the nanoscale or require substantial modification. Through this project, we systematically studied various aspects of radiation damage development in graphene, carbon nanotubes (CNTs), and graphite.

36 MATERIALS SCIENCE↗
DOE OSTI2022

The Use of Acoustic Cavitation to Recovery High-Assay Low-Enriched Uranium (HALEU) form TRISO Fuel Particles

Recent interest in advanced nuclear reactor concepts such as small modular reactor (SMR), micro reactor or versatile test reactor (VTR) has increased the demand for high-assay, low-enriched uranium (HALEU). The sustainable management of this resource is integral to successful resurgence of nuclear energy in the United States. The High Temperature Gas-Cooled Reactor (HTGR) concept is a prime candidate for deployment of the new fleet of SMRs, and it will become very important to have a simple and cost-effective technology to recover HALEU from short-burned, defective, or off-specification TRISO fuel particles. We have attempted to harness the high energetics of sonochemistry to penetrate the TRISO fuel particles and recover HALEU via acidic leaching. While the TRISO fuel particle design is inherently “bulletproof,” (due to the silicon carbide (SiC) layer), ultrasonic irradiation may hold the key to convenient access to its valuable contents. Sonochemistry is a field of chemistry based on acoustic cavitation, which is the formation, growth, and collapse of bubbles in liquid media.1,2 The oscillating bubble formation is produced by irradiation of a liquid media with sound waves. Literature reports indicate that collapsing bubbles induced by cavitation produces intense local heating, high pressures, and short lifetimes.1 These localized hot spots reach temperatures of ˜5000 K, pressures approaching 500 atm, and heating and cooling rates exceeding 100 K/s.1 The large temperature and pressure differentials deliver high-energy heating and microscopic explosive shock waves to a liquid media or liquid/solid interface. Cavitation at the surface of a solid in solution induces a deformation in the bubble cavity upon collapse. This deformation reinforces the bubble structure and sends a fast-moving stream of liquid through the cavity at the surface with velocities greater than 100 m/s.3 These energetic impacts have demonstrated an ability to penetrate or simply destroy the SiC shell surrounding the uranium fuel kernel during prolonged exposures to the high-power acoustic waves. Some preliminary results demonstrating HALEU recovery using sonochemistry techniques will be reported.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2023

Heavy ion irradiation induced failure of gallium nitride high electron mobility transistors: effects of in-situ biasing

Abstract While radiation is known to degrade AlGaN/GaN high-electron-mobility transistors (HEMTs), the question remains on the extent of damage governed by the presence of an electrical field in the device. In this study, we induced displacement damage in HEMTs in both ON and OFF states by irradiating with 2.8 MeV Au 4+ ion to fluence levels ranging from 1.72 × 10 10 to 3.745 × 10 13 ions cm −2 , or 0.001–2 displacement per atom (dpa). Electrical measurement is done in situ , and high-resolution transmission electron microscopy (HRTEM), energy dispersive x-ray (EDX), geometrical phase analysis (GPA), and micro-Raman are performed on the highest fluence of Au 4+ irradiated devices. The selected heavy ion irradiation causes cascade damage in the passivation, AlGaN, and GaN layers and at all associated interfaces. After just 0.1 dpa, the current density in the ON-mode device deteriorates by two orders of magnitude, whereas the OFF-mode device totally ceases to operate. Moreover, six orders of magnitude increase in leakage current and loss of gate control over the 2-dimensional electron gas channel are observed. GPA and Raman analysis reveal strain relaxation after a 2 dpa damage level in devices. Significant defects and intermixing of atoms near AlGaN/GaN interfaces and GaN layer are found from HRTEM and EDX analyses, which can substantially alter device characteristics and result in complete failure.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Approaching the ultimate superconducting properties of (Ba,K)Fe 2 As 2 by naturally formed low-angle grain boundary networks

The most effective way to enhance the dissipation-free supercurrent in the presence of a magnetic field for type II superconductors is to introduce defects that act as artificial pinning centers (APCs) for vortices. For instance, the in-field critical current density of doped BaFe 2 As 2 (Ba122), one of the most technologically important Fe-based superconductors, has been improved over the last decade by APCs created by ion irradiation. The technique of ion irradiation has been commonly implemented to determine the ultimate superconducting properties. However, this method is rather complicated and expensive. Here, we report a surprisingly high critical current density and strong pinning efficiency close to the crystallographic c-axis for a K-doped Ba122 epitaxial thin film without APCs, achieving performance comparable to ion-irradiated K-doped Ba122 single crystals. Microstructural analysis reveals that the film is composed of columnar grains with widths of approximately 30–60 nm. The grains are rotated around the b- (or a-) axis by 1.5° and around the c-axis by –1°, resulting in the formation of low-angle grain boundary networks. This study demonstrates that the upper limit of in-field properties reached in ion-irradiated K-doped Ba122 is achievable by grain boundary engineering, which is a simple and industrially scalable manner.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Grain Boundary Effects on Radiation Damage and Tritium Diffusion in Li–Al–O Ceramics from Molecular Dynamics and Experiments

Understanding irradiation damage and tritium transport in LiAlO2 ceramics is essential for their deployment in tritium-producing burnable absorber rods (TPBARs). Grain boundaries (GBs) play an important role in governing radiation response and tritium transport in LiAlO2 and its secondary phase LiAl5O8. Using molecular dynamics simulations, we investigated defect evolution and tritium diffusion during displacement cascades in single-crystal and bicrystal LiAlO2 and LiAl5O8 at 600 K. The results reveal that GBs suppress the damage in the LiAlO2 bicrystals as compared to single crystals, via interstitial emission. The effect is more pronounced for Li defects, than for Al and O. In LiAl5O8 the damage reduction due to introduction of GB is less pronounced overall. Tritium diffusion coefficients at GBs are higher by factors of 2–10 relative to diffusion inside grain bulk. The effect is particularly pronounced in LiAlO2, where S5, S17, and S25 GBs promote rapid tritium transport, whereas LiAl5O8 exhibits slower diffusion due to reduced free volume at its GBs. These findings evince a trade-off that while GBs mitigate radiation damage by absorbing interstitials, they simultaneously provide fast pathways for tritium migration which is not desirable for TPBAR application. The mechanistic insights gained here establish a foundation for microstructural design strategies to balance radiation tolerance and tritium retention in ceramic breeder materials.

Roy, Ankit↗
DOE OSTI2020

Hall Effect Characterization of α ‐Irradiated p‐Type 4H‐SiC

Most electrical characterization of radiation damage to semiconductors is conducted on full devices or on low‐doped material. However, evaluating the radiation hardness is challenging in less mature semiconductor systems where low‐doped material is unavailable and full devices are difficult to realize. Herein, temperature‐dependent Hall effect measurements are used to demonstrate α particle‐induced radiation effects in p‐type 4H‐SiC with a room temperature hole concentration of . The 4H‐SiC is irradiated by α particles from a 210 Po source over a fluence of –. Modeling the hole concentration as a function of temperature shows that α radiation causes hole compensation through the introduction of hole traps. The radiation also induces a reduction in hole mobility due to an increase in defect‐related scattering centers. At low temperatures and increasingly higher fluences, the conduction mechanism changes from band conduction to another mechanism.

Frye, Clint D.↗
DOE OSTI2021

Fundamental Studies of Tritium Formation and Diffusivity in Pure and Defective Zircaloy-4 Getters

Zirconium (Zr) alloys have excellent mechanical properties at high temperature and are resistant to corrosion in different environmental conditions. These alloys are used as tritium (3H or T) getters in nuclear reactors due to their low absorption cross section to thermal neutrons and excellent thermo-mechanical properties. Zr alloys have better mechanical and thermal properties than many other refractory alloys including stainless steel. After the irradiation of TPBAR by neutron flux, 3H produced during irradiation diffuses though the pellets and is captured by the getter. 3H chemically reacts with Zr metal to form metal hydride (ZrTx). Hydrides thus formed are brittle and adversely affect the mechanical and thermal properties of alloys. The lattice mismatch at the interface of alloy and metal hydrides also creates a stress that significantly reduces the alloy’s performance and operation life. Therefore, understanding the behavior of 3H and its species becomes significant as fuel burnup is increased, which leads to increase in hydrogen pickup and oxide formation.

Duan, Yuhua↗
DOE OSTI2026

Mesoscale atomic engineering in a crystal lattice

Controlling individual atoms using lasers, ion traps and scanning probe tips has transformed our understanding of matter and enabled breakthroughs in quantum science. Extending this control into three-dimensional (3D) solids and across mesoscopic scales, however, remains a foundational challenge. Electron irradiation in electron microscopes is known to induce atomic displacements, and atomic manipulation has been proposed and demonstrated. Yet repeated and deterministic control has remained elusive. Here, in this study, we demonstrate deterministic atomic engineering in a 3D crystal, creating ordered arrangements of more than 40,000 user-defined defects within minutes across a 150 nm × 100 nm × 13 nm volume. By steering individual Cr atoms in the magnetic semiconductor CrSBr into selected interstitial sites using an electron beam directed with sub-20-pm-scale accuracy, we create vacancy–interstitial complexes. The resulting impurity array forms a mesoscale crystal embedded within the host lattice, a new form of engineered artificial matter that remains stable at room temperature and outside the microscope. By tracking Cr atom displacements, we identify conditions under which the defect structures are predictable. Our calculations suggest that these defects form correlated impurity states with intra-defect optical transitions and inter-defect kinetic and Coulomb interactions. This establishes a generalizable platform for atomic defect engineering at mesoscopic, and potentially macroscopic, scales, opening opportunities for scalable quantum technologies, including deterministic colour-centre placement, quantum simulation of many-body lattice models and atomic-scale manufacturing.

74 ATOMIC AND MOLECULAR PHYSICS↗