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Results for “ION IMPLANTATION”
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Creation of color centers in silicon by focused ion beam implantation
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Study directed at development of an implantable biotelemetry ion detector
A literature search was conducted to currently update known information in the field of ion-selective electrodes. The review attempts to identify present trends in cation and anions selective electrodes pertinent to the area of bioimplantable units. An electronic circuit was designed to provide the high impedance interface between the ion-selective sensors and signal-processing equipment. The resulting design emphasized the need for low power and miniaturization. Many of the circuits were constructed and used to evaluate the ion-selective electrodes. A cuvette capable of holding the ion-selective and the reference electrodes was designed and constructed. This equipment was used to evaluate commercially available ion-selective electrodes and the electrodes designed and constructed in the study. The results of the electrode tests are included.
Velocity space diffusion of pickup ions from the water group at Comet Halley
The diffusion in velocity space of cometary ions was studied using the distributions of ions measured by the implanted ion spectrometer in Giotto during the inbound pass. The measurements were transformed into a frame comoving with the solar wind and oriented with the magnetic field. The observations show the evolution of the pitch angle distribution in the solar wind turbulence to form a shell from the initial ring. Diffusion in energy takes place simultaneously but on a longer time scale. Comparison with theory is inhibited by the lack of a suitable spatial model, but the simple arguments that can be made indicate that pitch angle diffusion and the process of parallel pickup take place more slowly than theory suggests.
Si quantum dots with focused ion beam implanted phosphorus donors.
Abstract not provided.
Ion Beam Implantation for Nanofabrication and Modification.
Abstract not provided.
Ion Beam Implantation for Nanofabrication and Modification.
Abstract not provided.
Final Scientific/Technical Report Ion implantation-enabled fabrication of AlN based Schottky diodes
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Dielectric behavior of Ar{sup +} implanted CR-39 polymer
The frequency dependent dielectric response of Ar{sup +} implanted CR-39 specimens has been studied. Samples were implanted with 130 keV Ar{sup +} ions to various doses ranging from 5x10{sup 14} to 1x10{sup 16} cm{sup -2}. The frequency response of dielectric constant (e) and dielectric loss has been studied both in the pristine and argon ion implanted samples of CR-39 polymer in the frequency range 10{sup 4} to 10{sup 8} Hz. Structural changes produced in CR-39 specimens due to implantation have been studied using Attenuated total reflectance (ATR) Fourier transform infrared spectroscopic technique. Results of dielectric analysis indicate the lowering in dielectric constant ({epsilon}') and similar behavior of dielectric loss with increase in ion fluence. An attempt has been made to correlate these changes produced in the dielectric properties of implanted specimens with the structural changes produced due to implantation.
Spontaneous wrinkling of soft matter by energetic deposition of Cr and Au
Wrinkling of stiff thin films deposited on compliant substrates is an effect that has been broadly investigated. However, wrinkling consequent to metal ion implantation has been less studied. In the work described here, we have explored the sub-micron wrinkling phenomena that spontaneously occur when metal ions (Au and Cr) are implanted with energy of a few tens of electron volts (49 eV for Au and 72 eV for Cr) into a compliant material (PDMS). This very low energy ion implantation was performed using a Filtered Cathodic Vacuum Arc technique, a process often referred to as energetic deposition or energetic condensation. For comparison, Au and Cr depositions with similar doses were also done using a sputtering technique (with lower particle energy of approximately 2 eV), and no wrinkle formation was then observed. In this way, we can discuss the role of ion energy in wrinkle formation. Depth profiles of the implanted material were calculated using the Tridyn computer simulation code for each metal, for several implantation doses. UV-vis absorption spectroscopy analysis confirmed the presence of metal nanoparticles. Atomic Force Microscopy imaging with spectral processing was used to compare the wrinkle morphology for each case investigated.
ION-INDUCED PROCESSING OF COSMIC SILICATES: A POSSIBLE FORMATION PATHWAY TO GEMS
Ion-induced processing of dust grains in the interstellar medium and in protoplanetary and planetary disks plays an important role in the entire dust cycle. We have studied the ion-induced processing of amorphous MgFeSiO{sub 4} and Mg{sub 2}SiO{sub 4} grains by 10 and 20 keV protons and 90 keV Ar{sup +} ions. The Ar{sup +} ions were used to compare the significance of the light protons with that of heavier, but chemically inert projectiles. The bombardment was performed in a two-beam irradiation chamber for in situ ion-implantation at temperatures of 15 and 300 K and Rutherford Backscattering Spectroscopy to monitor the alteration of the silicate composition under ion irradiation. A depletion of oxygen from the silicate structure by selective sputtering of oxygen from the surface of the grains was observed in both samples. The silicate particles kept their amorphous structure, but the loss of oxygen caused the reduction of ferrous (Fe{sup 2+}) ions and the formation of iron inclusions in the MgFeSiO{sub 4} grains. A few Si inclusions were produced in the iron-free magnesium silicate sample pointing to a much less efficient reduction of Si{sup 4+} and formation of metallic Si inclusions. Consequently, ion-induced processing of magnesium-iron silicates can produce grains that are very similar to the glassy grains with embedded metals and sulfides frequently observed in interplanetary dust particles and meteorites. The metallic iron inclusions are strong absorbers in the NIR range and therefore a ubiquitous requirement to increase the temperature of silicate dust grains in IR-dominated astrophysical environments such as circumstellar shells or protoplanetary disks.
Mass and charge overlaps in beamline implantation into compound semiconductor materials
Mass overlaps occurring as a result of extraction of ions from an arc discharge and gas collisions, producing molecular break up and charge exchange in the accelerator beamline, are examined for ion implantation into compound semiconductors. The effects of the choice of plasma gas elements for Be{sup +} implants are examined as an example.
Preshock region acceleration of implanted cometary H(+) and O(+)
A self-consistent, three-fluid model of plasma transport and implanted ion acceleration in the unshocked solar wind is presented. The solar wind plasma is depleted by charge exchange with the expanding cometary exosphere, while implanted protons and heavy ions are produced by photoionization and charge transfer and lost by charge exchange. A generalized transport equation describing convection, adiabatic and diffusive velocity change, and the appropriate production terms is used to describe the evolution of the two cometary ion components, while the moments of the Boltzmann equation are used to calculate the solar wind density and pressure. The flow velocity is obtained self-consistently by combining the conservation equations of the three ion species. The results imply that second-order Fermi acceleration can explain the implanted spectra observed in the unshocked solar wind. Comparison of measured and calculated distribution indicates that spatial diffusion of implanted ions probably plays an important role in forming the energetic particle environment in the shock vicinity.
Atomistic simulation of damage accumulation and amorphization in Ge
Damage accumulation and amorphization mechanisms by means of ion implantation in Ge are studied using Kinetic Monte Carlo and Binary Collision Approximation techniques. Such mechanisms are investigated through different stages of damage accumulation taking place in the implantation process: from point defect generation and cluster formation up to full amorphization of Ge layers. We propose a damage concentration amorphization threshold for Ge of ∼1.3 × 10{sup 22} cm{sup −3} which is independent on the implantation conditions. Recombination energy barriers depending on amorphous pocket sizes are provided. This leads to an explanation of the reported distinct behavior of the damage generated by different ions. We have also observed that the dissolution of clusters plays an important role for relatively high temperatures and fluences. The model is able to explain and predict different damage generation regimes, amount of generated damage, and extension of amorphous layers in Ge for different ions and implantation conditions.
Integration of a broad beam ion source with a high-temperature x-ray diffraction vacuum chamber
Here, the integration of a low energy, linearly variable ion beam current density, mechanically in situ adjustable broad beam ion source with a high-temperature x-ray diffraction (XRD) vacuum chamber is reported. This allows in situ XRD investigation of phase formation and evolution processes induced by low energy ion implantation. Special care has been taken to an independent adjustment of the ion beam for geometrical directing towards the substrate, a 15 mm small ion source exit aperture to avoid a secondary sputter process of the chamber walls, linearly variable ion current density by using a pulse length modulation (PLM) for the accelerating voltages without changing the ion beam density profile, nearly homogeneous ion beam distribution over the x-ray footprint, together with easily replaceable Kapton{sup Registered-Sign} windows for x-rays entry and exit. By combining a position sensitive x-ray detector with this PLM-modulated ion beam, a fast and efficient time resolved investigation of low energy implantation processes is obtained in a compact experimental setup.