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At least 613 records · Page 34

All sources NASA NTRS DOE OSTI

NASA NTRS1989

High-efficiency solar cells fabricated from direct-current magnetron sputtered n-indium tin oxide onto p-InP grown by atmospheric pressure metalorganic vapor phase epitaxy

An attempt is made to improve device efficiencies by depositing indium tin oxide onto epitaxially grown p-InP on p(+)-InP substrates. This leads to a reduction in the device series resistance, high-quality reproducible surfaces, and an improvement in the transport properties of the base layer. Moreover, many of the facets associated with badly characterized bulk liquid encapsulated Czochralski substrates used in previous investigations are removed in this way.

Li, X.↗

DOE OSTI2022

FAST-GREENS: A High Efficiency Free Electron Laser Driven by Superconducting RF Accelerator

In this paper we’ll describe the FAST-GREENS experimental program where a 4 m-long strongly tapered helical undulator with a seeded prebuncher is used in the high gain TESSA regime to convert a significant fraction (up to 10 %) of energy from the 240 MeV electron beam from the FAST linac to coherent 515 nm radiation. We’ll also discuss the longer term plans for the setup where by embedding the undulator in an optical cavity matched with the high repetition rate from the superconducting accelerator (3,9 MHz), a very high average power laser source can be obtained. Eventually, the laser pulses can be redirected onto the relativistic electrons to generate by inverse compton scattering a very high flux of circularly polarized gamma rays for polarized positron production.

43 PARTICLE ACCELERATORS↗

NASA NTRS1996

Highly Efficient Amplifier for Ka-Band Communications

An amplifier developed under a Small Business Innovation Research (SBIR) contract will have applications for both satellite and terrestrial communications. This power amplifier uses an innovative series bias arrangement of active devices to achieve over 40-percent efficiency at Ka-band frequencies with an output power of 0.66 W. The amplifier is fabricated on a 2.0- by 3.8-square millimeter chip through the use of Monolithic Microwave Integrated Circuit (MMIC) technology, and it uses state-of-the-art, Pseudomorphic High-Electron-Mobility Transistor (PHEMT) devices. Although the performance of the MMIC chip depends on these high-performance devices, the real innovations here are a unique series bias scheme, which results in a high-voltage chip supply, and careful design of the on-chip planar output stage combiner. This design concept has ramifications beyond the chip itself because it opens up the possibility of operation directly from a satellite power bus (usually 28 V) without a dc-dc converter. This will dramatically increase the overall system efficiency. Conventional microwave power amplifier designs utilize many devices all connected in parallel from the bias supply. This results in a low-bias voltage, typically 5 V, and a high bias current. With this configuration, substantial I(sup 2) R losses (current squared times resistance) may arise in the system bias-distribution network. By placing the devices in a series bias configuration, the total current is reduced, leading to reduced distribution losses. Careful design of the on-chip planar output stage power combiner is also important in minimizing losses. Using these concepts, a two-stage amplifier was designed for operation at 33 GHz and fabricated in a standard MMIC foundry process with 0.20-m PHEMT devices. Using a 20-V bias supply, the amplifier achieved efficiencies of over 40 percent with an output power of 0.66 W and a 16-dB gain over a 2-GHz bandwidth centered at 33 GHz. With a 28-V bias, a power level of 1.1 W was achieved with a 12-dB gain and a 36-percent efficiency. This represents the best reported combination of power and efficiency at this frequency. In addition to delivering excellent power and gain, this Ka-band MMIC power amplifier has an efficiency that is 10 percent greater than existing designs. The unique design offers an excellent match for spacecraft applications since the amplifier supply voltage is closely matched to the typical value of spacecraft bus voltage. These amplifiers may be used alone in applications of 1 W or less, or several may be combined or used in an array to produce moderate power, Ka-band transmitters with minimal power combining and less thermal stress owing to the combination of excellent efficiency and power output. The higher voltage operation of this design may also save mass and power because the dc-dc power converter is replaced with a simpler voltage regulator.

Source record↗

DOE OSTI2020

Ligand-Exchange-Induced Amorphization of Pd Nanomaterials for Highly Efficient Electrocatalytic Hydrogen Evolution Reaction

Various kinds of amorphous materials, such as transition metal dichalcogenides, metal oxides, and metal phosphates, have demonstrated superior electrocatalytic performance compared with their crystalline counterparts. Compared to other materials for electrocatalysis, noble metals exhibit intrinsically high activity and excellent durability. However, it is still very challenging to prepare amorphous noble-metal nanomaterials due to the strong interatomic metallic bonding. Herein, the discovery of a unique thiol molecule is reported, namely bismuthiol I, which can induce the transformation of Pd nanomaterials from face-centered-cubic (fcc) phase into amorphous phase without destroying their integrity. This ligand-induced amorphization is realized by post-synthetic ligand exchange under ambient conditions, and is applicable to fcc Pd nanomaterials with different capping ligands. Importantly, the obtained amorphous Pd nanoparticles exhibit remarkably enhanced activity and excellent stability toward electrocatalytic hydrogen evolution in acidic solution. This work provides a facile and effective method for preparing amorphous Pd nanomaterials, and demonstrates their promising electrocatalytic application.

36 MATERIALS SCIENCE↗

NASA NTRS2016

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

Ikpe, Stanley A.↗

DOE OSTI2024

Polymer Passivated All Inorganic Micro‐Structured CsPbI x Br y Perovskite Toward Highly Efficient Photodetectors

Abstract Solution‐processed inorganic perovskites cause chemical and structural defects unfavorable for photodetector application. Using a binary solvent, defects in CsPbI x Br y (CPIB) perovskite are passivated with poly 4‐vinylpyridine (PVP) and Poly methyl methacrylate (PMMA) polymers. X‐ray photoelectron spectroscopy and FTIR spectra reveal a Lewis base‐acid interaction between Pb 2+ and polymer, confirming the passivation of CPIB perovskite. Scanning electron microscopy analysis shows a dual‐surface morphology with microribbons and microcrystals in perovskites. After PMMA treatment, CPIB perovskite exhibits a blue shift in the bandgap (1.8 to 1.95 eV), while the PVP induced a redshift, reducing the bandgap to 1.7 eV. Blue shift in PL analysis indicates modification of grain boundaries. A higher lifetime obtained for CPIB/PVP confirms the restraint of non‐radiative recombinations. Photodetectors are fabricated with pristine CPIB, CPIB/PVP, and CPIB/PMMA perovskites. The passivated CPIB/PVP‐based photodetector exhibits a quick rise time of ≈23 ms and a decay time of ≈17 ms. It also demonstrates a remarkable photoresponsivity of 23 mA W −1 , an internal quantum efficiency of 4.9%, and a detectivity of 15.0 × 10 10 Jones at 10 mW cm −2 light intensity. This approach shows the potential for environmentally stable polymers to passivate inorganic perovskites for high photodetection performance.

Shah, Shruti↗

NASA NTRS2014

High Efficiency Quantum Well Waveguide Solar Cells and Methods for Constructing the Same

Photon absorption, and thus current generation, is hindered in conventional thin-film solar cell designs, including quantum well structures, by the limited path length of incident light passing vertically through the device. Optical scattering into lateral waveguide structures provides a physical mechanism to increase photocurrent generation through in-plane light trapping. However, the insertion of wells of high refractive index material with lower energy gap into the device structure often results in lower voltage operation, and hence lower photovoltaic power conversion efficiency. The voltage output of an InGaAs quantum well waveguide photovoltaic device can be increased by employing a III-V material structure with an extended wide band gap emitter heterojunction. Analysis of the light IV characteristics reveals that non-radiative recombination components of the underlying dark diode current have been reduced, exposing the limiting radiative recombination component and providing a pathway for realizing solar-electric conversion efficiency of 30% or more in single junction cells.

Welser, Roger E.↗

NASA NTRS2018

High Efficiency Quantum Well Waveguide Solar Cells and Methods for Constructing the Same

Welser, Roger E.↗

NASA NTRS1977

Competitively priced hydrogen via high-efficiency nuclear electrolysis

A fully dedicated nuclear-electrolytic hydrogen-production facility, based on advanced (1985) technology, has been synthesized and assessed at the conceptual level. The facility integrates an HTGR operating a binary shaftpower-extraction cycle at 980 C top temperature, direct dc electricity generation via acyclic generators, and high-current density high-pressure electrolyzers based on the solid polymer electrolyte approach. All subsystems are close-coupled and optimally interfaced. Pipeline-pressure hydrogen and coproduct oxygen are produced at 6900 kPa. On consistent costing bases, the advanced facility concept was found to provide hydrogen costs that were approximately half those associated with conventional, contemporary-technology nuclear electrolysis. The nuclear heat-to-hydrogen energy conversion efficiency for the advanced system was estimated as 43%, against 25% for the baseline present-day approach.

Escher, W. J. D.↗

DOE OSTI2021

The Path to Enlightenment: Progress and Opportunities in High Efficiency Halide Perovskite Light-Emitting Devices

Besides the flourishment in photovoltaics, halide perovskites hold great promise to compete with leading contenders among solution-processed emitters, such as organics and semiconductor colloidal nanocrystals, in the field of light emission. Halide perovskites exhibit outstanding optoelectronic properties, including high photoluminescence quantum yields, facile bandgap tunability, narrow emission line widths, and respectable carrier mobilities, promoting them to thrive in versatile light-emitting applications such as light-emitting diodes, lasers, X-ray scintillators, and circularly polarized light sources. Herein, we discuss the underlying physics of light emission in state-of-the-art perovskite light-emitting devices and focus on promising strategies for further improvement of device performance.

42 ENGINEERING↗

NASA NTRS2013

High-Efficiency Power Module

One or more embodiments of the present invention pertain to an all solid-state microwave power module. The module includes a plurality of solid-state amplifiers configured to amplify a signal using a low power stage, a medium power stage, and a high power stage. The module also includes a power conditioner configured to activate a voltage sequencer (e.g., bias controller) when power is received from a power source. The voltage sequencer is configured to sequentially apply voltage to a gate of each amplifier and sequentially apply voltage to a drain of each amplifier.

Simons, Rainee N↗

NASA NTRS2015

High-Efficiency Power Module

Simons, Rainee N.↗

NASA NTRS1986

A 20 GHz, high efficiency dual mode TWT for the ACTS program

The development of a 50 W/10 W dual mode K-band downlink TWT is examined, and its performance is evaluated. The designs of the electron gun, RF circuit, and collector for the TWT, which is enclosed in a capsule, are described. It is observed that the high power mode (HPM) power output is at 50 GHz and the low power mode (LPM) output is at 12 GHz; the saturated gain is 52.5 dB for HPM and 3 dB for LPM; the AM-PM is 4.2 dB; the HPM dc power output is 104 W; and the LPM dc output is 42 W; and the efficiency is 45 percent for the HPM and 28.6 percent for the LPM.

Muennemann, Frank↗

DOE OSTI2020

Highly efficient separation membrane based on cellulose acetate/chitosan fibrous composite substrate with activated carbon functional adsorption layer

Abstract BACKGROUND For improving the permeability and selectivity of adsorption separation membranes, membrane materials, structural morphology and separation technology must continue to be investigated. Development of a membrane that is environmentally friendly, cost‐effective and with high filter precision is an important direction in current research. RESULTS The air pressure spraying method was used to prepare an activated carbon (AC)–cellulose acetate/chitosan (CA/CS) composite membrane. The CA/CS fiber composite membrane was prepared as substrate layer, and AC was loaded on the surface of the CA/CS composite membrane as a functional adsorption layer. When the spraying pressure was 0.01 MPa and the mass ratio of AC/CS was 2:1, a composite membrane with even and compact morphology could be obtained. Both the compact AC functional layer and complete CA/CS substrate layer endowed the AC–CA/CS composite membrane with an excellent water filtration property. At low feeding pressure, the permeate flux and rejection rate of bisphenol A (BPA) could reach 9.27 × 10 3 L m −2 h −1 and 98.31%, respectively. Meanwhile, the adsorption capacities of the membrane were investigated. It tended to equilibrate quickly in 2 min for dyes and BPA. The equilibrium adsorption capacities of the membrane for acid blue, acid yellow and BPA were 175.80, 164.0815 and 79.58 mg g −1 , respectively. The adsorption process conformed to pseudo‐second‐order kinetics and the Langmuir monolayer adsorption model. CONCLUSIONS This work could provide a practical and effective feasibility for membrane separation technology. © 2020 Society of Chemical Industry (SCI)

Zhao, Xiaoyan↗

DOE OSTI2024

MULTI-LEADER: MULTI-source LEarning-Accelerated Design of high-Efficiency multi-stage compRessor (Final Technical Report)

The objective of MULTI-LEADER is to cut design costs by 80% while generating more energy-efficient designs of multi-stage compressors by developing and implementing novel machine learning (ML) techniques, which enable faster and fewer design iterations, improved solver performance, and concurrent multi-disciplinary design. Current industrial practices for the design of multi-stage compressors involve simulation-based design optimization with successive levels of model fidelity, iteratively evaluated between distinct disciplines, one stage at a time to tackle the high dimensional design variations. This project addresses these key design challenges: (1) concurrent optimization of multiple stages under many non-linear constraints; (2) multitude of evaluation of high-fidelity and expensive solvers and their gradients during optimization convergence in high-dimensional design; (3) multi-disciplinary design to maximize aerodynamic performance while guaranteeing structural integrity and additive manufacturability; (4) utilization of multiple fidelity of solvers with disparate parameterization and modeling assumptions. MULTI-LEADER achieved more than 5x speed up in detailed design of more energy-efficient compressors via these machine learning (ML) innovations: (i) rapid design surrogates by multi-source learning from diverse fidelities across multiple disciplines, (ii) physics-constrained data-augmented modeling for improved empiricism, (iii) generative manifold embedding for high dimensional concurrent design without gradient information; (iv) budget-constrained fidelity-adaptive sampling towards fewer design iterations.

33 ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2020

Multifunctional transition metal doped titanium dioxide reduced graphene oxide composites as highly efficient adsorbents and photocatalysts

A series of novel, mesoporous transition metal doped titanium dioxide-reduced graphene oxide composites are synthesized where the dopants were Mn, Co, Ni, Mo, and W. An in-situ synthesis method was used which involves a green, economic, hydrothermal process which can be scaled up easily. The composites show high surface areas (165–245 m 2 /g) and monomodal pore size distributions with average pore diameters in the range of 3–5 nm. The homogeneous distributions of the dopants are seen in SEM-EDX mapping data. The indirect band gaps of the composite materials are in the range of 2.20–2.48 eV. The composites show excellent dye adsorption activities where 100% adsorption of Rhodamine B occurs within 5 min when Mo–TiO 2 /rGO composite is used. Furthermore, the adsorbed dye can either be desorbed or photocatalytically degraded and the composite is reusable up to 10 cycles without losing significant activity. Mo–TiO 2 /rGO composite showed excellent adsorption of both cationic and anionic dyes at neutral pH.

36 MATERIALS SCIENCE↗

NASA NTRS2006

A High Efficiency Multiple-Anode 260-340 GHz Frequency Tripler

We report on the fabrication at the Jet Propulsion Laboratory of a fixed-tuned split-block waveguide balanced frequency tripler working in the 260-340 GHz band. This tripler will be the first stage of a x3x3x3 multiplier chain to 2.7 THz (the last stages of which are being fabricated at JPL) and is therefore optimized for high power operation. The multiplier features six GaAs Schottky planar diodes in a balanced configuration integrated on a GaAs membrane. Special attention was put on splitting the input power as evenly as possible among the diodes in order to ensure that no diode is overdriven. Preliminary RF tests indicate that the multiplier covers the expected bandwidth and that the efficiency is in the range 1.5-7.5 % with 100 mW of input power.

local oscillators↗

NASA NTRS2014

5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of μs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high‐power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre‐ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn‐off Thyristors (GTOs) and Silicon‐Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast‐switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced forward conduction losses, faster reverse recovery time (faster turn‐off), and lower‐magnitude reverse recovery current. In addition, SiC devices have lower leakage current as compared to their Si counterparts, and a high thermal conductivity, potentially allowing the former to operate at higher temperatures with a smaller, lighter heatsink (or no heatsink at all).

Toftul, Alexandra↗