SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
In this paper, we discuss the development of this very sensitive long-wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in terms of quantum efficiency, NEAT, uniformity, and operability.
A system that comprises optical and electronic subsystems has been developed as an infrastructure for a spectroradiometer that measures time-dependent spectral radiance of the daylight sky, in a narrow field of view (having angular width of the order of 1 ) centered on the zenith, in several spectral bands in the wavelength range from 0.3 to 2.2 m. This system is used in conjunction with two commercially available monolithic spectrometers: a silicon-based one for wavelengths from 0.3 to 1.1 m and a gallium arsenide-based one for wavelengths from 1.05 to 2.2 m (see figure). The role of this system is to collect the light from the affected region of the sky, collimate the light, deliver the collimated light to the monolithic spectrometers, and process the electronic outputs of the spectrometers
Data illustrating the radiation response of emerging high gain, low noise detectors are presented. Ionizing dose testing of silicon internal discrete avalanche photodiodes, and 51-MeV proton testing of InGaAs/InAlAs avalanche photodiodes operated in Geiger mode are discussed.
ZnSe has been a great choice for the rare-earth and transition metal doping to develop lasers. It is an excellent materialfor variety of optical applications due to wide transparency range, good fabricability and very low optical absorptionsimilar to other selenides. NASA Marshall Space Flight Center has developed large crystals using physical vapordeposition (PVD) doped with transition metals for lasing. GaAs based quasi-phase matched structures have a lot oflimitations including difficulty of frequency conversion from available high power lasers. We are developing Si- andGaAs- based templates and using microfabrication process to deposit ZnSe using physical vapor transport (PVT)method. Experimental results of the fabrication of templates and growth of ZnSe on templates will be presented.
The emerging use of the physics-based athermal recombination-corrected displacement per atom (arc-dpa) model for the displacement damage efficiency has motivated a re-evaluation of the historical empirically-derived GaAs damage response function with the purpose of highlighting needs for future analytical and experimental work. The 1-MeV neutron damage equivalence methodology used in the ASTM E-722 standard for GaAs has been re-evaluated using updated nuclear data. This yielded a higher fidelity representation of the GaAs displacement kerma and, through the use of the refined PKA recoil energy-dependent damage efficiency model, an updated 1-MeV(GaAs) displacement damage function. This re-evaluation included use of the Norgett-Robinson-Torrens (NRT) model for an updated threshold treatment, rather than the sharp-threshold Kinchin-Pease model used in the current ASTM standard. The underlying nuclear data evaluations have been updated to use the ENDF/VIII.0 {sup 75}As and TENDL-2019 {sup 71}Ga/{sup 69}Ga evaluations. The displacement kerma and 1-MeV-equivalent damage responses were calculated using a modified NJOY-2016 code which allowed for refinements in some of the damage models. This paper shows that an updated displacement damage function, based upon the latest nuclear data, is consistent with the experimental data used to develop the current ASTM E-722 GaAs standard. Using a double ratio approach to compare the available experimental data with the calculated response, the average legacy double ratio was found to be 0.97 ± 0.05 and the average updated double ratio was found to be 0.94 ± 0.05. (authors)
Various embodiments described herein provide for a topological quantum computer that uses edge Majorana quasi-particles to form qubits. An inverted Indium Arsenide (InAs) and Gallium Antimonide (GaSb) heterostructure is disclosed that is a quantum spin Hall insulator. A layer of aluminum can be deposited over a nanotube that is placed across the layers of the heterostructure. Once the nanotube is removed, and a gate is formed on the heterostructure and the heterostructure is cooled so that the aluminum becomes superconducting, helical edge states are formed at the junction of the super conducting aluminum, the InAs, and the GaSb which creates a Majorana zero modes (MZMs) at zero magnetic field. The MZMs can be used to construct a topological qubit for fault-resistant topological quantum computation.
Indium arsenide Schottky-Barrier diodes in gallium antimonide substrate mix submillimeter waves, producing much lower frequency output. Integrated diode array has relatively-high signal-to-noise ratio and wide frequency band. Operates at moderate cryogenic temperatures (100 K).
In this paper, we discuss the development of this very sensitive long wavelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in quantum efficiency, NE(delta)T, uniformity, and operability.
In this paper, we discuss the development of this very sensitive long waelength infrared (LWIR) camera based on a GaAs/AlGaAs QWIP focal plane array (FPA) and its performance in quantum efficiency, NEAT, uniformity, and operability.
Colloidal quantum dots (QDs) have seen expanded applications in optoelectronics from visible to near-infrared (NIR) wavelengths. However, the options for QDs with bright and size-tunable emission in the NIR region are mostly limited to heavy-metal-based (Pb, Cd, Hg) semiconductors. Here, Ga-rich In 1–X Ga X As QDs with zinc chalcogenide shells are demonstrated as candidates for NIR emitters. Based on new developments in inorganic molten salt chemistry, we synthesized colloidal In 1–X Ga X As QDs containing up to 85% gallium with high crystallinity based on Raman and XRD analyses. Zinc selenide and sulfide shells with different morphologies were grown on In 1–X Ga X As QDs by controlling the Zn precursor chemistry. Despite the nominally reduced lattice mismatch in the In 1–X Ga X As/ZnSe heterostructure, a ZnS shell was found to be a much more effective passivation material: In 1–X Ga X As/ZnS core–shell QDs show a photoluminescence quantum yield (PL QY) of about 30% versus 11% for ZnSe shells. In conclusion, based on the analysis of PL decay and transient absorption (TA) dynamics, we surmise that electron trapping is the major reason for efficiency loss, providing a clear heterostructure design principle for realizing efficient NIR-emitting In 1–X Ga X As QDs.