Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “GAN”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 613 records · Page 34

Size-Dependent Nucleation in Crystal Phase Transition from Machine Learning Metadynamics

In this Letter, we present a framework that combines machine learning potential (MLP) and metadynamics to investigate solid-solid phase transition. Here, based on the spectral descriptors and neural networks regression, we develop a scalable MLP model to warrant an accurate interpolation of the energy surface where two phases coexist. Applying it to the simulation of B4–B1 phase transition of GaN under 50 GPa with different model sizes, we observe sequential change of the phase transition mechanism from collective modes to nucleation and growths. When the size is at or below 128 000 atoms, the nucleation and growth appear to follow a preferred direction. At larger sizes, the nuclei occur at multiple sites simultaneously and grow to microstructures by passing the critical size. The observed change of the atomistic mechanism manifests the importance of statistical sampling with large system size in phase transition modeling.

36 MATERIALS SCIENCE↗

Localization Effect in Photoelectron Transport Induced by Alloy Disorder in Nitride Semiconductor Compounds

Near-band-gap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. Here, the photoemission quantum yield of the InGaN samples with more than 5% of indium drops by more than 1 order of magnitude when the temperature is decreased while it remains constant for lower indium content. This drop is attributed to a freezing of photoelectron transport in p-InGaN due to electron localization in the fluctuating potential induced by the alloy disorder. This interpretation is supported by the disappearance at low temperature of the peak in the photoemission spectrum that corresponds to the contribution of the photoelectrons relaxed at the bottom of the InGaN conduction band.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Probing configurational disorder in ZnGeN 2 using cluster-based Monte Carlo

ZnGeN 2 is sought as a semiconductor with comparable lattice constant to GaN and tunable band gap for integration in optoelectronic devices. Configurational disorder on the cation sublattice of ZnGeN 2 can strongly modify the electronic structure compared to the ordered material, and both ordered and disordered forms of ZnGeN 2 are candidates for light-emitting diodes and other emitters. The nonisovalent character of the disordered species (Zn 2+ and Ge 4+ ) subjects the cation ordering to strong short-range order effects. To model these effects, we use Monte Carlo (MC) simulations utilizing a cluster expansion to approximate formation enthalpy. Representative disordered configurations in 1024-atom supercells are relaxed in density functional theory calculations. From the MC structures, we extract a short-range order parameter (the N-cation coordination motif), and two long-range order parameters (Bragg-Williams and stretching parameters), and examine their correlations. We perform a thermodynamic integration to determine the mixing entropy and free energy. ZnGeN 2 exhibits a first-order phase transition with pronounced discontinuities in enthalpy and entropy, as well as in the structural order parameters. We discuss the relationship between the effective temperature used in the MC simulation and the growth temperatures in experiment in relation to the crossover from the nonequilibrium to the equilibrium growth regime. This work expands on current models of site disorder in ZnGeN 2 and provides atomic structure models with a systematic variation of the degree of cation disorder.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Understanding the fundamental driver of semiconductor radiation tolerance with experiment and theory

Space is the operating environment of a multitude of systems that our society is heavily reliant on today, however, maintaining operability there necessitates special consideration of the electronic systems' tolerance of space radiation. Electronic systems are critically dependent on the electronic properties of their semiconductor components, which are modified by space radiation with an adverse impact on the space system performance. What innate property allows some semiconductors to sustain little damage while others accumulate defects rapidly with dose is poorly understood, which limits the extent to which radiation tolerance can be implemented as a design criterion. Here, to gain insight into what properties are drivers of semiconductor radiation tolerance, the first step is to generate a dataset of the relative radiation tolerance of a broad sampling of semiconductors. To accomplish this, Rutherford backscatter channeling experiments are used to compare the displaced lattice atom buildup in InAs, InP, GaP, GaN, ZnO, MgO, and Si as a function of stepwise alpha particle dose. With this experimental information on radiation-induced incorporation of interstitial defects in hand, hybrid density functional theory electron densities (and their derived quantities) are calculated and their gradient and Laplacian are evaluated to obtain key fundamental information about the interactions in each material. It is shown that simple, undifferentiated values (which are typically used to describe bond strength) are insufficient to predict radiation tolerance. Instead, the curvature of the electron density at bond critical points provides a measure of radiation tolerance consistent with the experimental results obtained. This curvature and associated forces surrounding bond critical points have the potential to disfavor the localization of displaced lattice atoms at these points, favoring their diffusion toward perfect lattice positions. With this criterion to predict radiation tolerance, simple density functional theory simulations can be conducted on potential new materials to gain insight into how they may operate in demanding high radiation environments.

36 MATERIALS SCIENCE↗

Magnetoelectric properties at the Co/AlN(0001) interface

AlN nitride is a large-band-gap polar material that has gained interest due to its ability to become ferroelectric and its compatibility with Si- and GaN-based technologies. This compound could, therefore, be a good candidate to design new artificial multiferroics if combined with a ferromagnetic electrode. For this work, we performed first-principles calculations to investigate the set up of the magnetoelectric coupling at the Co/AlN(0001) interface. Our results describe a complex interfacial atomic structure with variable local magnetic properties as a function of the atom alignment. We predict an average variation of interface spin magnetization, when the polarization is reversed, of 3.83 𝜇B nm −2 , close to the values already reported in the literature at metal/oxide interfaces. This confirms the potential of this AlN-based ferroelectric compound to be used in future voltage-controlled spintronic devices.

36 MATERIALS SCIENCE↗

PyFaults: A Python Toolkit for Stacking Fault Screening

PyFaults is an open-source Python library designed to model stacking fault disorder in crystalline materials and qualitatively assess the characteristic selective broadening effects in powder X-ray diffraction (PXRD). Here, the main capabilities of PyFaults are presented, including unit cell and supercell model construction, PXRD pattern calculation, assessment against experimental PXRD, and methods for rapid screening of candidate models within a set of possible stacking vectors and fault occurrence probabilities. This program aims to serve as a computationally inexpensive tool for identifying and screening potential stacking fault models in materials with planar disorder. Three diverse case studies, involving GaN, Li2MnO3 and Li3YCl6, are presented to illustrate the program functionality across a range of structure types and stacking fault modalities.

MATHEMATICS AND COMPUTING↗

Thermal and Mechanical Design of a High-Voltage Power Electronics Package

This paper presents the thermal and mechanical design aspects of a power electronics package with 5-kV GaN devices. Through finite element analyses, we investigated the impact of different cooling configurations and device locations on the thermal performance and reliability of the package. We found that placing the devices closer to the direct bond copper substrate as opposed to a centered approach in the proposed double-sided cooling configuration resulted in improved heat dissipation. This approach also reduced the total number of attachment layers, thereby likely improving the reliability of the package. Furthermore, simulations revealed that the device location had a negligible impact on the thermomechanical behavior of the attachment layers, as they are more prone to the local coefficient of thermal expansion mismatch.

electronic packaging↗

Controller Verification of a Smart-Grid Compatible 200 kHz Single-stage Photovoltaic Microinverter

This paper presents control system design, implementation, and experimental validation of a single-stage 400 W, 200 kHz solar photovoltaic (PV) microinverter using hardware-in-the-loop (HIL) and hardware testing. The selected circuit topology is based on a Gallium Nitride (GaN) direct-matrix based dual active bridge (DAB) converter with a low voltage active power decoupler (APD) circuit. Control performance is verified, smart-grid compatibility is tested, and circuit operation is confirmed. Controller HIL (CHIL) is shown to aid in a complex power electronics system design by 1) enabling detailed control development prior to hardware implementation, 2) expanding the use of automated testing, and 3) increasing confidence in control performance prior to prototype testing. Altogether, these factors make HIL a valuable tool in complex power electronic designs.

14 SOLAR ENERGY↗

A 1MHz Oak Ridge AC / DC Converter for UAV Contactless Charger Implementation

In this paper, a 1 MHz single-phase Oak Ridge Converter (ORC) AC/DC wireless power transfer (WPT) system is introduced for unmanned air vehicle (UAV) charging applications. The proposed advanced solution eliminates the design, weight, volume, and the cost of the power factor correcting (PFC) front-end rectifier compared to the conventional practices. Additionally, grid power quality requirements can be achieved with the presented innovative idea. With this method, single stage WPT primary side uses the hybrid grid frequency and high frequency (60 Hz and 1 MHZ) from ac source through the coupler coils and to UAV battery with GaN FETs. Experimental results of the single-phase system is presented to confirm the mathematical analyses with the source voltage of 110 VAC, RMS and output voltage of 40 VDC at 1 kW power with 6 inches air gap between couplers. The primary coupler consists of a ferrite-backed single-turn coil with a radius of 1.5 ft, and the secondary coupler is made with an air-core single-turn coil with radius of 1.2 ft. The system overall ac to dc efficiency is measured 77 % acquiring 0.99 power factor (PF) and 3.3 % current total harmonic distortion (THD) at 1 kW power.

Asa, Erdem↗

A Voltage Injection-Based Current Harmonics Suppression Strategy for Six-Phase PMSM With Nonsinusoidal Back EMF

This article presents a voltage injection-based current harmonic minimization method for wide bandgap device-based six-phase permanent magnet synchronous machine (PMSM) drives. The presence of low-order harmonics is common in the back EMF of PMSMs with low slot and high pole numbers. The back EMF harmonics generate low-order harmonic currents that increase torque ripples. Furthermore, zero-sequence current (ZSC) is also observed if all six phases are connected to a common neutral point. ZSC does not affect the torque ripple but reduces the system efficiency. A special technique is required to reduce ZSC for variable speed drives as direct ac component to synchronous reference frame (SRF) dc transformation is not possible for ZSC. In this article, a voltage injection-based current harmonics reduction method is proposed. The injected harmonic voltage coefficients are calculated from the harmonic estimations of back EMF and updated using closed-loop harmonic compensators to improve steady-state performance. For ZSC reduction, third harmonics power controller, and for 6n ± 1 (n = 1, 2,...) order harmonic current reduction, SRF current controllers are presented in this article. Furthermore, the current harmonics minimization method is experimentally verified using a GaN-based three-level active neutral point clamped inverter-driven six-phase PMSM.

42 ENGINEERING↗

A Digital Three Level Space Vector Modulator for High Frequency Vector Sequence Generation

This letter proposes a digital high-speed three-level space vector pulse width modulator (3L-SVPWM). A conventional 3L-SVPWM is typically computation-based, involving a sequential execution of sub-tasks on a digital signal processor (DSP) based controller. The resulting high computation time of 5.4 μs limits the implementation of additional control blocks for switching frequencies greater than 100 kHz. This is overcome by transforming sub-tasks into digital blocks with 1-0 decisions and simpler arithmetic operations. The sub-task blocks are executed concurrently on a programmable logic device (PLD). Hence, a fast 3L-SVPWM execution in 140 ns is achieved. The proposed digital 3L-SVPWM enables high switching frequency operation of wide bandgap (WBG) device-based 3 L inverters to generate high fundamental frequency waveforms. A finite state machine is an integral part of the proposed implementation with the ability to generate any vector sequence, maximizing the usage of redundant vector states in 3L-SVPWM. Here, the proposed digital 3L-SVPWM operation is demonstrated with a GaN-based 3 L active neutral point clamped (3L-ANPC) inverter. Experimental results are presented at 250 kHz switching frequency to generate vector sequences for center-aligned SVPWM (CA-SVPWM) and common mode voltage reduced SVPWM (CMVR-SVPWM). The results also showcase a high fundamental frequency generation capability of 10 kHz.

active neutral point clamped inverter↗

High-Speed Nonpolar InGaN/GaN Superluminescent Diode With 2.5 GHz Modulation Bandwidth

We demonstrate a superluminescent diode fabricated on a nonpolar m-plane GaN substrate by employing a linearly tapered waveguide design. A high electrical -3dB modulation bandwidth ( f\n 3dB \n) of 2.5 GHz at a current density of 30 kA/cm\n 2 \n is achieved. The high modulation bandwidth is attributed to the shorter carrier recombination lifetime, the linear gain curve in the nonpolar m-plane quantum wells, and the ability to operate at high current densities while effectively suppressing lasing. We derive a general expression for the -3dB bandwidth as a function of current density for SLDs using a similar approach to that for laser diodes. The -3dB bandwidth of a nonpolar superluminescent diode increases exponentially with current density. The experimental results are consistent with the derived expression for f\n 3dB \n vs. current density.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Power Conversion Systems Enabled by SiC BiDFET Device

The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. Furthermore, the matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac-ac and ac dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

42 ENGINEERING↗

A Bulk-Capacitance Reduction Method Using Self-Driven Thyristor for AC-DC Converters

Universal serial bus power delivery (USB-PD) fast chargers equipped with wide-bandgap devices are driven to higher power density and efficiency. Furthermore, the indispensable high-voltage bulk capacitors used to smooth the rectifier output could take 40% of the total system volume due to the large capacitance value required. This paper discussed a capacitor reduction method using a self-driven thyristor scheme comprised of only three components in total. No extra control circuit is needed. Circuit analysis and design equations are presented, and the design results are implemented in a 60-W GaN-based active-clamp flyback converter. The measurement results on the prototype show a 36.4% reduction of the bulk-capacitor size with similar efficiency compared to the conventional solution.

30 DIRECT ENERGY CONVERSION↗

Postfault Operation of Three-Level Inverter Driven Six-Phase PMSM With Enhanced Torque–Speed Region

This article presents an open-switch postfault operational technique with enhanced torque–speed region for three-level (3L) active neutral point clamped (ANPC) inverter-driven symmetrical six-phase (SSP) permanent magnet synchronous machines (PMSMs). Maximum torque (MT), minimum loss (ML), and single three-phase (STP) operations are commonly used for the postfault operations of six-phase drives. The maximum possible torque and speed in these operations are generally limited by voltage, current ratings, and the neutral point configuration of the motor. To enhance the postfault torque and speed operating region, the torque and speed limits in different postfault operational techniques are determined based on the voltage, current constraints, and neutral point configuration of the SSP-PMSM. In this work, a unified postfault operation is proposed that increases the postfault operational limits by combining MT, ML, and STP operations and modifying the neutral point configuration of the SSP-PMSM. In addition, a technique is also presented that modifies the pulsewidth modulation technique to enable full torque operation below 0.5 p.u. speed. The proposed postfault operational technique enables full-speed (1 p.u.) operation by operating in STP mode and full torque operation (1 p.u.) below 0.5 p.u. speed. Furthermore, the postfault operational technique is experimentally validated using a Gallium Nitride (GaN) device-based3L-ANPC inverter-driven SSP-PMSM.

42 ENGINEERING↗

Detecting False Data Injection Attacks in Smart Grids: A Semi-Supervised Deep Learning Approach

The dependence on advanced information and communication technology increases the vulnerability in smart grids under cyber-attacks. Recent research on unobservable false data injection attacks (FDIAs) reveals the high risk of secure system operation, since these attacks can bypass current bad data detection mechanisms. To mitigate this risk, this paper proposes a data-driven learning-based algorithm for detecting unobservable FDIAs in distribution systems. We use autoencoders for efficient dimension reduction and feature extraction of measurement datasets. Further, we integrate the autoencoders into an advanced generative adversarial network (GAN) framework, which successfully detects anomalies under FDIAs by capturing the unconformity between abnormal and secure measurements. Also, considering that the datasets collected from practical power systems are partially labeled due to expensive labeling costs and missing labels, the proposed method only requires a few labeled measurement data in addition to unlabeled data for training. Numerical simulations in three-phase unbalanced IEEE 13-bus and 123-bus distribution systems validate the detection accuracy and efficiency of this method.

97 MATHEMATICS AND COMPUTING↗

A Six-Phase Space Vector PWM Technique for Wide Bandgap Device-Based Three-Level Inverters

This article presents a space vector pulsewidth modulation (SVPWM) technique for wide bandgap (WBG) device-based three-level (3L) six-phase inverters. Implementation of the SVPWM techniques for any six-phase inverter is complex for its high number of possible voltage vectors. Different six-phase load configurations are also possible depending on the angle between two consecutive phases and neutral point connections. The implementation techniques change depending on the load configuration. Moreover, a common neutral point for all six phases leads to circulating currents. Capacitor voltage balancing is also needed for 3L inverters. Capacitor voltage balancing and addressing the circulating current problem further increases the implementation complexity. In this article, a generalized SVPWM technique is proposed for the six-phase 3L inverters that is implementable using two three-phase 3L SVPWM blocks. The SVPWM technique also ensures dc bus capacitor voltage balancing and minimizes circulating current. Here, the SVPWM technique is experimentally verified using a GaN-based 3L six-phase active neutral point clamped (ANPC) inverter prototype, and the results are presented in this article.

42 ENGINEERING↗