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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 613 records · Page 34
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Unconventional superconductivity near a nematic instability in a multi-orbital system

Abstract We analyze superconductivity in a multi-orbital fermionic system near the onset of a nematic order, using doped FeSe as an example. We associate nematicity with spontaneous polarization between d xz and d yz orbitals. We derive pairing interaction, mediated by soft nematic fluctuations, and show that it is attractive, and its strength depends on the position on the Fermi surface. As the consequence, right at the nematic quantum-critical point (QCP), superconducting gap opens up at T c only at special points and extends into finite arcs at T < T c . In between the arcs the Fermi surface remains intact. This leads to highly unconventional behavior of the specific heat, with no jump at T c and seemingly finite offset at T = 0. We discuss gap structure and pairing symmetry away from a QCP and compare nematic and spin-fluctuation scenarios. We apply the results to FeSe 1− x S x and FeSe 1− x Te x .

Materials Science↗
DOE OSTI2025

Three-dimensional nature of anomalous Hall conductivity in YMn 6 Sn 6−x Ga x , x ≈ 0.55

The unique geometry of kagome lattices leads to topological features such as flat bands and Dirac cones. When paired with ferromagnetism and a Fermi level near Dirac points, they offer a platform for realizing topological Chern magnetotransport. This prospect recently drew interest in the ferrimagnetic kagome metal TbMn 6 Sn 6 . However, density functional theory (DFT) calculations indicate that its 2D Chern gap lies well above the Fermi energy, raising questions about its role in anomalous Hall conductivity. Here, we study YMn 6 Sn 5.45 Ga 0.55 , a structurally and electronically similar material, and find that its intrinsic anomalous Hall effect is three-dimensional. This demonstrates that the Hall response in such compounds does not originate from 2D Chern gaps. Additionally, we confirm that the newly proposed empirical scaling relation for extrinsic Hall conductivity is universally governed by spin fluctuations.

Bhandari, Hari [University of Notre Dame, IN (Unit↗
DOE OSTI2026

Altermagnetism, kagome flat band, and Weyl fermion states in magnetically intercalated transition metal dichalcogenides

Altermagnetic (AM) compounds have recently emerged as a promising platform for realizing unconventional quantum phases, enabled by their unique spin-split band structure at zero net magnetization. Here, we present a first-principles investigation of magnetically intercalated transition metal dichalcogenides (TMDs) of the form XY 4 Z 8 (X = Mn, Fe, Co, Ni, Cr, or V; Y = Nb or Ta; and Z = Se or S), identifying a subset of new versatile AM candidates. Our results establish a systematic correlation between interatomic geometry, quantified by the ratio of interlayer to intralayer spacing, and the magnetic ground states. Systems with A-type antiferromagnetic order exhibit momentum-dependent spin splitting consistent with AM behavior. The combination of the AM spin-splitting and the spin-orbit coupling leads to the emergence of Weyl nodes together with the corresponding topological Fermi arc surface states. Moreover, we identify flat bands near the Fermi level that originate from the intercalant-induced formation of an effective kagome-like sublattice in the TMD layer. These results collectively establish magnetically intercalated TMDs as a promising platform for engineering altermagnetism, flat bands, and Weyl fermions within a single material family, facilitating the development of topological and spintronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Directional ballistic transport in the two-dimensional metal PdCoO2

Abstract In an idealized infinite crystal, the material properties are constrained by the symmetries of the unit cell. The point-group symmetry is broken by the sample shape of any finite crystal, but this is commonly unobservable in macroscopic metals. To sense the shape-induced symmetry lowering in such metals, long-lived bulk states originating from an anisotropic Fermi surface are needed. Here we show how a strongly facetted Fermi surface and the long quasiparticle mean free path present in microstructures of PdCoO 2 yield an in-plane resistivity anisotropy that is forbidden by symmetry on an infinite hexagonal lattice. We fabricate bar-shaped transport devices narrower than the mean free path from single crystals using focused ion beam milling, such that the ballistic charge carriers at low temperatures frequently collide with both of the side walls that define the channel. Two symmetry-forbidden transport signatures appear: the in-plane resistivity anisotropy exceeds a factor of 2, and a transverse voltage appears in zero magnetic field. Using ballistic Monte Carlo simulations and a numerical solution of the Boltzmann equation, we identify the orientation of the narrow channel as the source of symmetry breaking.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Magnetism and charge density wave order in kagome FeGe

Electron correlations often lead to emergent orders in quantum materials, and one example is the kagome lattice materials where topological states exist in the presence of strong correlations between electrons. This arises from the features of the electronic band structure that are associated with the kagome lattice geometry: flat bands induced by destructive interference of the electronic wavefunctions, topological Dirac crossings, and a pair of van Hove singularities. Various correlated electronic phases have been discovered in kagome lattice materials, including magnetism, charge density waves, nematicity, and superconductivity. Recently, a charge-density wave was discovered in the magnetic kagome FeGe, providing a platform for understanding the interplay between charge order and magnetism in kagome materials. Here, we observe all three electronic signatures of the kagome lattice in FeGe using angle-resolved photoemission spectroscopy. The presence of van Hove singularities near the Fermi level is driven by the underlying magnetic exchange splitting. Furthermore, we show spectral evidence for the charge-density wave as gaps near the Fermi level. Furthermore, our observations point to the magnetic interaction-driven band modification resulting in the formation of the charge-density wave, and indicate an intertwined connection between the emergent magnetism and charge order in this moderately-correlated kagome metal.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Iron-based binary ferromagnets for transverse thermoelectric conversion

Thermoelectric generation using the anomalous Nernst effect (ANE) has great potential for application in energy harvesting technology because the transverse geometry of the Nernst effect should enable efficient, large-area and flexible coverage of a heat source. For such applications to be viable, substantial improvements will be necessary not only for their performance but also for the associated material costs, safety and stability. In terms of the electronic structure, the anomalous Nernst effect (ANE) originates from the Berry curvature of the conduction electrons near the Fermi energy. To design a large Berry curvature, several approaches have been considered using nodal points and lines in momentum space. Here we perform a high-throughput computational search and find that 25 percent doping of aluminium and gallium in alpha iron, a naturally abundant and low-cost element, dramatically enhances the ANE by a factor of more than ten, reaching about 4 and 6 microvolts per kelvin at room temperature, respectively, close to the highest value reported so far. The comparison between experiment and theory indicates that the Fermi energy tuning to the nodal web—a flat band structure made of interconnected nodal lines—is the key for the strong enhancement in the transverse thermoelectric coefficient, reaching a value of about 5 amperes per kelvin per metre with a logarithmic temperature dependence. We have also succeeded in fabricating thin films that exhibit a large ANE at zero field, which could be suitable for designing low-cost, flexible microelectronic thermoelectric generators.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Extended quantum anomalous Hall states in graphene/hBN moiré superlattices

Electrons in topological flat bands can form new topological states driven by correlation effects. The pentalayer rhombohedral graphene/hexagonal boron nitride (hBN) moiré superlattice was shown to host fractional quantum anomalous Hall effect (FQAHE) at approximately 400 mK, triggering discussions around the underlying mechanism and role of moiré effects. In particular, new electron crystal states with non-trivial topology have been proposed. Here, in this paper, we report electrical transport measurements in rhombohedral pentalayer and tetralayer graphene/hBN moiré superlattices at electronic temperatures down to below 40 mK. We observed two more fractional quantum anomalous Hall (FQAH) states and smaller R xx values in pentalayer devices than those previously reported. In the new tetralayer device, we observed FQAHE at moiré filling factors v = 3/5 and 2/3. With a small current at the base temperature, we observed a new extended quantum anomalous Hall (EQAH) state and magnetic hysteresis, where R xy = h/e 2 and vanishing R xx spans a wide range of v from 0.5 to 1.3. At increased temperature or current, EQAH states disappear and partially transition into the FQAH liquid. Furthermore, we observed displacement field-induced quantum phase transitions from the EQAH states to the Fermi liquid, FQAH liquid and the likely composite Fermi liquid. Our observations established a new topological phase of electrons with quantized Hall resistance at zero magnetic field and enriched the emergent quantum phenomena in materials with topological flat bands.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Strain engineering of doped hydrogen passivated silicon quantum dots

Silicon quantum dots are nanomaterials that are attractive candidates for photovoltaic applications. Doping of these materials creates p-n junctions and is important for solar cells. In this work, we present a first-principles study of the coupled influence of doping and strain on the stability, energy gap, Fermi level, electronic density, and density of states of hydrogen-passivated silicon quantum dots. We find that the cohesive energy and the energy gap decrease with increasing quantum dot size and are strongly influenced by strain. Furthermore, the response to strain also depends on the size of the quantum dot and dopant type. We present expressions of cohesive energy and energy gap as power-law of size and polynomial dependence on strain. We also show that the Fermi energy increases with size for pristine and p-type doping but decreases with size for n-type doping. We also discuss the influence of strain and dopant type on the density of states and electron density of the quantum dots.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Ultrabroadband THz conductivity of gated graphene in- and out-of-equilibrium

We employ ultrabroadband terahertz (THz) spectroscopy to expose the high-frequency transport properties of Dirac fermions in monolayer graphene. By controlling the carrier concentration via tunable electrical gating, both equilibrium and transient optical conductivities are obtained for a range of Fermi levels. The frequency-dependent equilibrium response is determined through a combination of time-domain THz and Fourier-transform infrared spectroscopy for energies up to the near-infrared, which also provides a measure of the gate-voltage dependent Fermi level. Transient changes in the real and imaginary parts of the graphene conductivity are electro-optically resolved for frequencies up to 15 THz after near-infrared femtosecond excitation, both at the charge-neutral point and for higher electrostatic-doping levels. Modeling of the THz response provides insight into changes of the carrier spectral weights and scattering rates, and reveals an additional broad-frequency ($$\approx$$ 8 THz) component to the photo-induced response, which we attribute to the zero-momentum mode of quantum-critical transport observed here in large-area CVD graphene.

Coslovich, G↗
DOE OSTI2022

Quantum critical fluctuations in an Fe-based superconductor

Abstract Quantum critical fluctuations may prove to play an instrumental role in the formation of unconventional superconductivity. Here, we show that the characteristic scaling of a marginal Fermi liquid is present in inelastic light scattering data of an Fe-based superconductor tuned through a quantum critical point (QCP) by chemical substitution or doping. From the doping dependence of the imaginary time dynamics we are able to distinguish regions dominated by quantum critical behavior from those having classical critical responses. This dichotomy reveals a connection between the marginal Fermi liquid behavior and quantum criticality. In particular, the overlap between regions of high superconducting transition temperatures and quantum critical scaling suggests a contribution from quantum fluctuations to the formation of superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Energy gap of topological surface states in proximity to a magnetic insulator

Abstract Topological surface-states can acquire an energy gap when time-reversal symmetry is broken by interfacing with a magnetic insulator. This gap has yet to be measured. Such topological-magnetic insulator heterostructures can host a quantized anomalous Hall effect and can allow the control of the magnetic state of the insulator in a spintronic device. In this work, we observe the energy gap of topological surface-states in proximity to a magnetic insulator using magnetooptical Landau level spectroscopy. We measure Pb 1-x Sn x Se–EuSe heterostructures grown by molecular beam epitaxy exhibiting a record mobility and low Fermi energy. Through temperature dependent measurements and theoretical calculations, we show this gap is likely due to quantum confinement and conclude that the magnetic proximity effect is weak in this system. This weakness is disadvantageous for the realization of the quantum anomalous Hall effect, but favorable for spintronic devices which require the preservation of spin-momentum locking at the Fermi level.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Orbital selective band re-normalization induced Lifshitz transition in TiSe 2

A Lifshitz transition is a sudden change in Fermi surface topology, often linked to quantum phenomena, with major impact on transport and sometimes superconductivity. Here we demonstrate a Lifshitz transition in TiSe 2 using micro–angle-resolved photoemission spectroscopy. At low temperatures an electron pocket appears at the Brillouin-zone center, whereas at higher temperatures spectral weight from a hole-like valence band dominates the Fermi level. Unlike previously reported cases typically driven by rigid band shifts, in TiSe 2 an orbital-selective strong band renormalization induces the crossover near 160 K. This mechanism naturally explains the longstanding resistivity anomaly of TiSe 2 , which peaks around 160 K. Our results clarify its puzzling transport behavior and open avenues to investigate how periodic lattice distortions interact with strong electronic correlations.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Emergent mystery in the Kondo insulator samarium hexaboride

Samarium hexaboride (SmB 6 ) is an example of a Kondo insulator, in which strong electron correlations cause a band gap to open. SmB 6 hosts both a bulk insulating state and a conductive surface state. Within a Fermi-liquid framework, the strongly correlated ground-state electronic structure can be mapped to a simple state resembling a topological insulator. Although uncertainties remain, many experiments provide compelling evidence that the conductive surface states have a topological origin. However, the bulk behavior is less well understood and some experiments indicate bulk in-gap states. This has inspired the development of many theories that predict the emergence of new bulk quantum phases beyond Landau’s Fermi-liquid model. We review the current progress on understanding both the surface and the bulk states, especially the experimental evidence for each. A mystery centres on the existence of the bulk in-gap states and why they appear in some experiments but not others. Adding to the mystery is why quantum oscillations in SmB6 appear only in magnetization but not in resistivity. Here, we conclude by elaborating on three questions: why SmB 6 is worth studying, what can be done to move forwards and what other correlated insulators could give additional insight.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Ultrafast enhancement of electron-phonon coupling via dynamic quantum well states

Abstract The density of states at the Fermi surface controls many material properties by influencing the low-energy interactions of conductive electrons. Typically, external tuning knobs generate only small perturbations to the density of states in crystals, since their band structure depends strongly on the lattice potential. In contrast, quantum well states are contingent on a localized potential extrinsic to the crystal lattice and can be easily modified leading to changes in the density of states at the Fermi level. Here, we are able to control the quantum well potential on the surface of Bi 2 Se 3 with light, driving a density of states singularity below E F at ultrafast timescales, thereby triggering a reversible Lifshitz transition. We reveal a substantial ultrafast enhancement of the electron-phonon coupling with repercussions on the relaxation dynamics in the system. We argue that the relaxation dynamics are governed largely by the interplay of the dynamic density of states of the quantum wells with c -axis scattering from the $${A}_{{{{{{{{\rm{1g}}}}}}}}}^{2}$$ A 1g 2 optical phonon mode. These results demonstrate a powerful way to enhance electron-boson interaction on ultrafast timescales providing new avenues for controlling material properties and driving novel quantum phases of matter.

Ciocys, Samuel T.↗
DOE OSTI2023

Dynamics and resilience of the unconventional charge density wave in ScV 6 Sn 6 bilayer kagome metal

Long-range electronic ordering descending from a metallic parent state constitutes a rich playground to study the interplay of structural and electronic degrees of freedom. In this framework, kagome metals are in the most interesting regime where both phonon and electronically mediated couplings are significant. Several of these systems undergo a charge density wave transition. However, to date, the origin and the main driving force behind this charge order is elusive. Here, we use the kagome metal ScV 6 Sn 6 as a platform to investigate this problem, since it features both a kagome-derived nested Fermi surface and van-Hove singularities near the Fermi level, and a charge-ordered phase that strongly affects its physical properties. By combining time-resolved reflectivity, first principles calculations and photo-emission experiments, we identify the structural degrees of freedom to play a fundamental role in the stabilization of charge order, indicating that ScV 6 Sn 6 features an instance of charge order predominantly originating from phonons.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Electrically tuned hyperfine spectrum in neutral Tb( II )(Cp iPr5 ) 2 single-molecule magnet

Molecular spin qubits with long spin coherence time as well as non-invasive operation methods on such qubits are in high demand. It was shown that both molecular electronic and nuclear spin levels can be used as qubits. In solid state systems with dopants, an electric field was shown to effectively change the spacing between the nuclear spin qubit levels when the electron spin density is high at the nucleus of the dopant. Inspired by such solid-state systems, we propose that divalent lanthanide (Ln) complexes with an unusual electronic configuration of Ln 2+ have a strong interaction between the Ln nuclear spin and the electronic degrees of freedom, which renders electrical tuning of the interaction. Furthermore, as an example, we study electronic structure and hyperfine interaction of the 159 Tb nucleus in a neutral Tb(II)(Cp iPr5 ) 2 single-molecule magnet (SMM), which exhibits unusually long magnetization relaxation time, using the complete active space self-consistent field (CASSCF) method with spin–orbit interaction included within the restricted active space state interaction (RASSI). Our calculations show that the low-energy states arise from 4f 8 (6s,5d z 2 ) 1 , 4f 8 (5d x 2 -y 2 ) 1 , and 4f 8 (5d xy ) 1 configurations. We compute the hyperfine interaction parameters and the electronic–nuclear spectrum within our multiconfigurational approach. We find that the hyperfine interaction is about one order of magnitude greater than that for Tb(III)Pc 2 SMMs. This stems from the strong Fermi contact interaction between the Tb nuclear spin and the electron spin density at the nucleus that originates from the occupation of the (6s,5d) orbitals. We also uncover that the response of the Fermi contact term to electric field results in electrical tuning of the electronic–nuclear level separations. This hyperfine Stark effect may be useful for applications of molecular nuclear spins for quantum computing.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Hidden role of Bi incorporation in nonradiative recombination in methylammonium lead iodide

Bismuth incorporation has been shown to significantly decrease the performance of perovskite solar cells, which has led to the common belief that Bi Pb is a strong nonradiative recombination center in hybrid perovskites. Using rigorous first-principles calculations, we demonstrate that Bi Pb is not an efficient recombination center. However, Bi acts as a donor, and pushes the Fermi level closer to the conduction band; this shift promotes the formation of iodine interstitials, which are the actual nonradiative recombination centers. Here, these insights explain why Bi incorporation is detrimental for the photovoltaic performance. More generally, it draws attention to the detrimental role unintentionally incorporated impurities can play, not by acting as nonradiative recombination centers themselves, but by shifting the Fermi level and thereby promoting the formation of efficiency-killing defects.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Spin-polarization anisotropy controlled by bending in tungsten diselenide nanoribbons and tunable excitonic states

A WSe 2 monolayer shows many interesting properties due to its spin-orbit coupling induced spin splitting in bands around the Fermi level and the spin-valley configuration. The orientation of the spin polarization in the relevant bands is crucial for the nature of exciton states and the optical valley selectivity. In this work, we studied the WSe 2 nanoribbons under different mechanical bending curvatures and electron/hole doping with density functional theory and their optical absorption and excitonic states with many-body perturbation GW and BSE (Bethe-Salpeter equation) methods. We found that the WSe 2 nanoribbons can exhibit an enhanced SOC effect and a spatially varying spin polarization in bands around the Fermi level under bending. The spin-polarization can show an anisotropy (or asymmetry) in those nearly degenerate bands, leading to a controllable magnetism via bending and electron/hole doping to the nanoribbons, suggesting a potential application in compact and controllable magnetic nanodevices and spintronics. The optical absorption spectrum of the nanoribbon presents a large tunability with bending within the near infrared region of about 0.4 to 1.5 eV, showing an enhanced absorption at a large bending condition. Finally, the exciton states generally show mixed or various spin configuration in the electron and hole pairs that are controlled by bending, potentially useful for applications in spin-based quantum information processes.

36 MATERIALS SCIENCE↗