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At least 613 records · Page 34
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Growth and patterning of laser ablated superconducting YBa2Cu3O7 films on LaAlO3 substrates

A high quality superconducting film on a substrate with a low dielectric constant is desired for passive microwave circuit applications. In addition, it is essential that the patterning process does not effect the superconducting properties of the thin films to achieve the highest circuit operating temperatures. YBa2Cu3O7 superconducting films were grown on lanthanum aluminate substrates using laser ablation with resulting maximum transition temperature (T sub c) of 90 K. The films were grown on a LaAlO3 which was at 775 C and in 170 mtorr of oxygen and slowly cooled to room temperature in 1 atm of oxygen. These films were then processed using photolithography and a negative photoresist with an etch solution of bromine and ethanol. Results are presented on the effect of the processing on T(sub c) of the film and the microwave properties of the patterned films.

Warner, J. D.↗
NASA NTRS1989

Toughness distribution considerations in a thin film system

The spontaneous mechanical failure of thin films and occasionally substrates, due to the thin film deposition, are relatively common occurrences. Large internal stresses (e.g. 10 MPa to 100 MPa) are an inherent part of the thin film deposition process. In most cases where fracture mechanics has been applied to thin film systems, the failure path is confined a priori to the substrate-thin film interface or in the thin film perpendicular to that interface. This paper considers the contributions which determine the failure path and presents a qualitative model for identifying the failure path in a thin film system taking into account the presence of residual stresses. The most important aspect of this model is that it offers an explanation of the variation in the locus of failure that does not strictly depend on the weakest point of the material (i.e. the least work of fracture) being the first to fail. It does not, inherent to its construction, restrict failure to the interface a priori. The fracture mechanics criterion of the strain energy release rate equaling the material's resistance to crack growth leads to crack propagation at a specific location and defines the selection of the fracture path.

Brown, L. D.↗
NASA NTRS1990

An experimental study of high Tc superconducting microstrip transmission lines at 35 GHz and the effect of film morphology

Microstrip transmission lines in the form of ring resonators were fabricated from a number of in-situ grown laser ablated films and post-annealed co-sputtered YBa2Cu3O(7-x) films. The properties of these resonators were measured at 35 GHz and the observed performance is examined in light of the critical temperature (Tc) and film thickness and also the film morphology which is different for the two deposition techniques. It is found that Tc is a major indicator of the film performance for each growth type with film thickness becoming important as it decreases towards 100 A. It is also found that the films with a mixed grain orientation (both a axis and c axis oriented grains) have poorer microwave properties as compared with the primarily c axis oriented material. This is probably due to the significant number of grain boundaries between the different crystallites, which may act as superconducting weak links and contribute to the surface resistance.

Chorey, C. M.↗
NASA NTRS1991

An experimental study of high Tc superconducting microstrip transmission lines at 35 GHz and the effect of film morphology

Microstrip transmission lines in the form of ring resonators were fabricated from a number of in-situ grown laser ablated films and post-annealed co-sputtered YBa2Cu3O(7-x) films. The properties of these resonators were measured at 35 GHz and the observed performance is examined in light of the critical temperature (Tc) and film thickness, and also the film morphology, which is different for the two deposition techniques. It is found that Tc is a major indicator of the film performance for each growth type, with film thickness becoming important as it decreases towards 1000 A. It is also found that the films with a mixed grain orientation (both a-axis and c-axis oriented grains) have poorer microwave properties as compared with the primarily c-axis oriented material. This is probably due to the significant number of grain boundaries between the different crystallites, which may act as superconducting weak links and contribute to the surface resistance.

Chorey, C. M.↗
NASA NTRS1991

Substrate effects on the epitaxial growth of ZnGeP2 thin films by open tube organometallic chemical vapor deposition

Epitaxial ZnGeP2-Ge films have been grown on (111)GaP substrates using MOCVD. The films grown with dimethylzinc to germane flow rate ratio R greater than 10 show mirror-smooth surface morphology. Films grown with R less than 10 show a high density of twinning, including both double position and growth twins. Compared to films grown on (001) GaP substrates, the layers on (111) GaP generally show a higher density of microstructural defects. TEM electron diffraction patterns show that the films grown on (111) GaP substrates are more disordered than films grown on (001) GaP under comparable conditions. The growth rate on (111) GaP substrates is about 2.5 times slower than that on (001) GaP, and films grown on Si substrates show extensive twinning formation. Both TEM and SEM examinations indicate that smooth epitaxial overgrowth may be easier on (111) Si substrates than on (001) Si.

Xing, G. C.↗
NASA NTRS1991

Effects on LDEF exposed copper film and bulk

Two forms of copper were exposed to the Long Duration Exposure Facility (LDEF) Mission 1 environment: a copper film, initially 74.2 plus or minus 1.1 nm thick sputter coated on a fused silica flat and a bulk piece of oxygen-free, high conductivity (OFHC) copper. The optical density of the copper film changed from 1.33 to 0.70 where exposed, and the film thickness increased to 106.7 plus or minus 0.5 nm where exposed. The exposed area appears purple by reflection and green by transmission for the thin film and maroon color for the bulk copper piece. The exposed areas increased in thickness, but only increase in the thickness of the thin film sample could be readily measured. The increase in film thickness is consistent with the density changes occurring during conversion of copper to an oxide. However, we have not been able to confirm appreciable conversion to an oxide by x-ray diffraction studies. We have not yet subjected the sample to e-beams or more abusive investigations out of concern that the film might be modified.

Peters, Palmer N.↗
NASA NTRS1991

Microwave response of high transition temperature superconducting thin films

We have studied the microwave response of YBa2Cu3O(7 - delta), Bi-Sr-Ca-Cu-O, and Tl-Ba-Ca-Cu-O high transition temperature superconducting (HTS) thin films by performing power transmission measurements. These measurements were carried out in the temperature range of 300 K to 20 K and at frequencies within the range of 30 to 40 GHz. Through these measurements we have determined the magnetic penetration depth (lambda), the complex conductivity (sigma(sup *) = sigma(sub 1) - j sigma(sub 2)) and the surface resistance (R(sub s)). An estimate of the intrinsic penetration depth (lambda approx. 121 nm) for the YBa2Cu3O(7 - delta) HTS has been obtained from the film thickness dependence of lambda. This value compares favorably with the best values reported so far (approx. 140 nm) in single crystals and high quality c-axis oriented thin films. Furthermore, it was observed that our technique is sensitive to the intrinsic anisotropy of lambda in this superconductor. Values of lambda are also reported for Bi-based and Tl-based thin films. We observed that for the three types of superconductors, both sigma(sub 1) and sigma(sub 2) increased when cooling the films below their transition temperature. The measured R(sub s) are in good agreement with other R(sub S) values obtained using resonant activity techniques if we assume a quadratic frequency dependence. Our analysis shows that, of the three types of HTS films studied, the YBa2Cu3O(7 - delta) thin film, deposited by laser ablation and off-axis magnetron sputtering are the most promising for microwave applications.

Miranda, Felix Antonio↗
NASA NTRS1992

Effects on LDEF exposed copper film and bulk

Two forms of copper were exposed to the Long Duration Exposure Facility (LDEF) Mission 1 environment: a copper film initially 74.2 plus or minus 1.1 nm thick sputter coated on a fused silical flat and a bulk piece of oxygen free, high conductivity (OFHC) copper. The optical density of the copper film changed from 1.33 to 0.70 where exposed and the film thickness increased to 106.7 plus or minus 0.5 nm where exposed. The exposed area appears purple by reflection and green by transmission for the thin film and maroon color for the bulk copper piece. The exposed areas increased in thickness, but only increase in the thickness of thin film samples could be readily measured. The increase in film thickness is consistent with the density changes occurring during conversion of copper to an oxide. However, we have not been able to confirm appreciable conversion to an oxide by x ray diffraction studies. We have not yet subjected the sample to e-beams or more abusive conditions out of concern that the film might be modified.

Peters, Palmer N.↗
NASA NTRS1992

Thin film thermocouples for high temperature measurement on ceramic materials

Thin film thermocouples have been developed for use on metal parts in jet engines to 1000 C. However, advanced propulsion systems are being developed that will use ceramic materials and reach higher temperatures. The purpose of this work is to develop thin film thermocouples for use on ceramic materials. The thin film thermocouples are Pt13Rh/Pt fabricated by the sputtering process. Lead wires are attached using the parallel-gap welding process. The ceramic materials are silicon nitride, silicon carbide, aluminum oxide, and mullite. Both steady state and thermal cycling furnace tests were performed in the temperature range to 1500 C. High-heating-rate tests were performed in an arc lamp heat-flux-calibration facility. The fabrication of the thin film thermocouples is described. The thin film thermocouple output was compared to a reference wire thermocouple. Drift of the thin film thermocouples was determined, and causes of drift are discussed. The results of high-heating-rate tests up to 2500 C/sec are presented. The stability of the ceramic materials is examined. It is concluded that Pt13Rh/Pt thin film thermocouples are capable of meeting lifetime goals of 50 hours or more up to temperatures of 1500 C depending on the stability of the particular ceramic substrate.

Holanda, Raymond↗
NASA NTRS1993

Friction and wear of plasma-deposited diamond films

Reciprocating sliding friction experiments in humid air and in dry nitrogen and unidirectional sliding friction experiments in ultrahigh vacuum were conducted with a natural diamond pin in contact with microwave-plasma-deposited diamond films. Diamond films with a surface roughness (R rms) ranging from 15 to 160 nm were produced by microwave-plasma-assisted chemical vapor deposition. In humid air and in dry nitrogen, abrasion occurred when the diamond pin made grooves in the surfaces of diamond films, and thus the initial coefficients of friction increased with increasing initial surface roughness. The equilibrium coefficients of friction were independent of the initial surface roughness of the diamond films. In vacuum the friction for diamond films contacting a diamond pin arose primarily from adhesion between the sliding surfaces. In these cases, the initial and equilibrium coefficients of friction were independent of the initial surface roughness of the diamond films. The equilibrium coefficients of friction were 0.02 to 0.04 in humid air and in dry nitrogen, but 1.5 to 1.8 in vacuum. The wear factor of the diamond films depended on the initial surface roughness, regardless of environment; it increased with increasing initial surface roughness. The wear factors were considerably higher in vacuum than in humid air and in dry nitrogen.

Miyoshi, Kazuhisa↗
NASA NTRS1993

Optical and scratch resistant properties of diamondlike carbon films deposited with single and dual ion beams

Amorphous diamondlike carbon (DLC) films were deposited using both single and dual ion beam techniques utilizing filament and hollow cathode ion sources. Continuous DLC films up to 3000 A thick were deposited on fused quartz plates. Ion beam process parameters were varied in an effort to create hard, clear films. Total DLC film absorption over visible wavelengths was obtained using a Perkin-Elmer spectrophotometer. An ellipsometer, with an Ar-He laser (wavelength 6328 A) was used to determine index of refraction for the DLC films. Scratch resistance and frictional and adherence properties were determined for select films. Applications for these films range from military to the ophthalmic industries.

Kussmaul, Michael T.↗
NASA NTRS1993

Development of thin film thermocouples on ceramic materials for advanced propulsion system applications

Thin film thermocouples were developed for use on metal parts in jet engines to 1000 C. However, advanced propulsion systems are being developed that will use ceramic materials and reach higher temperatures. The purpose is to develop thin film thermocouples for use on ceramic materials. The new thin film thermocouples are Pt13Rh/Pt fabricated by the sputtering process. Lead wires are attached using the parallel-gap welding process. The ceramic materials tested are silicon nitride, silicon carbide, aluminum oxide, and mullite. Both steady state and thermal cycling furnace tests were performed in the temperature range to 1500 C. High-heating-rate tests were performed in an arc lamp heat-flux-calibration facility. The fabrication of the thin film thermocouples is described. The thin film thermocouple output was compared to a reference wire thermocouple. Drift of the thin film thermocouples was determined, and causes of drift are discussed. The results of high heating rate tests up to 2500 C/sec are presented. The stability of the ceramic materials is examined. It is concluded that Pt13Rh/Pt thin film thermocouples are capable of meeting lifetime goals of 50 hr or more up to temperatures of 1500 C depending on the stability of the particular ceramic substrate.

Holanda, Raymond↗
NASA NTRS1993

Optical and Scratch Resistant Properties of Diamondlike Carbon Films Deposited with Single and Dual Ion Beams

Amorphous diamond-like carbon (DLC) films were deposited using both single and dual ion beam techniques utilizing filament and hollow cathode ion sources. Continuous DLC films up to 3000 A thick were deposited on fused quartz plates. Ion beam process parameters were varied in an effort to create hard, clear films. Total DLC film absorption over visible wavelengths was obtained using a Perkin-Elmer spectrophotometer. An ellipsometer, with an Ar-He laser (wavelength 6328 A) was used to determine index of refraction for the DLC films. Scratch resistance, frictional, and adherence properties were determined for select films. Applications for these films range from military to the ophthalmic industries.

Kussmaul, Michael T.↗
NASA NTRS1993

Ordered organic thin films self-assembled from the vapor phase

Organic films self-assembled from a liquid phase, as in Langmuir-Blodgett or adsorption from solution, have received much attention in the past decade as techniques to achieve highly oriented-ordered polymeric thin films. Many organic compounds including some of the same fatty acids have been vapor deposited as well. However, organic pigments and dyes comprise a major class of important materials which have very low solubilities yet excellent thermal stabilities, making them ideally suited for film deposition from the vapor phase. Surprisingly, such molecular systems exhibit a significant propensity to self order, a high sensitivity to deposition parameters, and a range of microstructural forms that cannot be duplicated by the less energetic mechanisms associated with solution adsorption processes. Molecular solids such as heterocyclic polynuclear aromatics are excellent candidates for film formation by vacuum deposition means. Over the past decade, our work and that of others investigating a wide variety of perylene and phthalocyanine derivatives identified five deposition parameters that can significantly affect film morphology, physical microstructure, and type and extent of ordering developed in vacuum and vapor transport grown films. These parameters are substrate temperature, deposition rate, substrate chemistry and epitaxy, ambient gas convective flows, and post deposition annealing. Examples of how each of these conditions manifest themselves in the film structure and ordering, most frequently revealed by scanning electron microscopy, reflection absorption infrared spectroscopy (RAIR), and grazing incidence x-ray diffraction (GIX), are presented.

Debe, M. K.↗
NASA NTRS1994

Chemical vapor deposition of high T(sub c) superconducting films in a microgravity environment

Since the discovery of the YBaCuO bulk materials in 1987, Metalorganic Chemical Vapor Deposition (MOCVD) has been proposed for preparing HTSC high T(sub c) films. This technique is now capable of producing high-T(sub c) superconducting thin films comparable in quality to those prepared by any other methods. The MOCVD technique has demonstrated its superior advantage in making large area high quality HTSC thin films and will play a major role in the advance of device applications of HTSC thin films. The organometallic precursors used in the MOCVD preparation of HTSC oxide thin films are most frequently metal beta-diketonates. High T(sub c) superconductors are multi-component oxides which require more than one component source, with each source, containing one kind of precursor. Because the volatility and stability of the precursors are strongly dependent on temperature, system pressure, and carrier gas flow rate, it has been difficult to control the gas phase composition, and hence film stoichiometry. In order circumvent these problems we have built and tested a single source MOCVD reactor in which a specially designed vaporizer was employed. This vaporizer can be used to volatilize a stoichiometric mixture of diketonates of yttrium, barium and copper to produce a mixed vapor in a 1:2:3 ratio respectively of the organometellics. This is accomplished even though the three compounds have significantly different volatilities. We have developed a model which provides insight into the process of vaporizing mixed precursors to produce high quality thin films of Y1Ba2Cu3O7. It shows that under steady state conditions the mixed organometallic vapor must have a stoichiometric ratio of the individual organometallics identical to that in the solid mixture.

Levy, Moises↗
NASA NTRS1995

Changes in chemical and optical properties of thin film metal mirrors on LDEF

Thin films of the metals Cu, Ni, Pt, Au, Sn, Mo, and W deposited on fused silica flats were exposed at ambient temperature on the leading and trailing faces of the LDEF. Reflectances of these films were measured from 250 to 2500 nm and compared with controls. The exposed films were subjected to the LDEF external environment including atomic oxygen, molecular contamination, and solar ultraviolet. Major changes in optical and infrared reflectance were seen for Cu, Mo, Ni, and W films on the leading face of LDEF and are attributed to partial conversion of metal to metal oxide. Smaller changes in optical properties are seen on all films and are probably caused by thin contaminant films deposited on top of the metal. The optical measurements are correlated with film thickness measurements, x-ray photoelectron spectroscopy, optical calculations, and, in the case of Cu, with x-ray diffraction measurements. In a few cases, comparisons with results from a similar UAH experiment on STS-8 have been drawn.

Peters, Palmer N.↗
NASA NTRS1995

Growth and analysis of highly oriented (11n) BCSCO films for device research

Films of BCSCO superconductor of the type Bi2CaSr2Cu2Ox have been grown by liquid phase epitaxy method (LPE), using a partially closed growth chamber. The films were grown on (001) and (110) NdGaO3 substrates by slow cooling process in an optimized temperature range below the peritectic melting point (880 C) of Bi2CaSr2Cu2O8. Optimization of parameters, such as seed rotation, soak of initial growth temperature and growth period results in the formation of 2122 phase BCSCO films. The films grown at rotation rates of less than 30 and more than 70 rpm are observed to be associated with the second phase of Sr-Ca-Cu-O system. Higher growth temperatures (is greater than 860 C) also encourage to the formation of this phase. X-Ray Diffraction (XRD) measurements show that the films grown on (110) NdGaO3 have a preferred (11 n)-orientation. It is pertinent to mention here that in our earlier results published elsewhere we obtained c-axis oriented Bi2CaSr2Cu2O8 phase films on (001) NdGaO3 substrate. Critical current density is found to be higher for the films grown on (110) than (001) NdGaO3 substrate orientation. The best values of zero resistance (T(sub co)) and critical current density obtained are 87 K and 105 A/sq cm, respectively.

Raina, K. K.↗
NASA NTRS1996

Microstructural Characterization of Thin Polyimide Films by Positron Lifetime Spectroscopy

Positron lifetimes have been measured in a series of thin aromatic polyimide films. No evidence of positronium formation was observed in any of the films investigated. All test films exhibited only two positron lifetime components, the longer component corresponding to the positrons annihilating at shallow traps. Based on these trapped positron lifetimes, free volume fractions have been calculated for all the films tested. A free volume model has been developed to calculate the dielectric constants of thin polyimide films. The experimental and the calculated values for the dielectric constants of the films tested are in reasonably good agreement. It has been further noted that the presence of bulky CF(sub 3) groups and meta linkages in the polyimide structure results in higher free volume fraction and, consequently, lower dielectric constant values for the films studied.

Eftekhari, A.↗