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At least 613 records · Page 34
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Rapid thermal annealing of Amorphous Hydrogenated Carbon (a-C:H) films

Amorphous hydrogenated carbon (a-C:H) films were deposited on silicon and quartz substrates by a 30 kHz plasma discharge technique using methane. Rapid thermal processing of the films was accomplished in nitrogen gas using tungsten halogen light. The rapid thermal processing was done at several fixed temperatures (up to 600 C), as a function of time (up to 1800 sec). The films were characterized by optical absorption and by ellipsometry in the near UV and the visible. The bandgap, estimated from extrapolation of the linear part of a Tauc plot, decreases both with the annealing temperature and the annealing time, with the temperature dependence being the dominating factor. The density of states parameter increases up to 25 percent and the refractive index changes up to 20 percent with temperature increase. Possible explanations of the mechanisms involved in these processes are discussed.

Alterovitz, Samuel A.↗
NASA NTRS1987

Theoretical approach to oxygen atom degradation of silver

Based on available Rutherford backscattering spectrometry (RBS), proton induced X-ray emission (PIXE) and ellipsometry data obtained on silver specimens subjected to atomic oxygen attack in low Earth orbit STS flight 41-G, a theory was developed to model the oxygen atom degradation of silver. The diffusion of atomic oxygen in a microscopically nonuniform medium is an essential constituent of the theory. The driving force for diffusion is the macroscopic electrochemical potential gradient developed between the specimen surface exposed to the ambient and the bulk of the silver specimen. The longitudinal electric effect developed parallel to the gradient is modified by space charge of the diffusing charged species. Lateral electric fields and concentration differences also exist due to the nonuniform nature of the medium. The lateral concentration differences are found to be more important than the lateral electric fields in modifying the diffusion rate. The model was evaluated numerically. Qualitative agreement exists between the kinetics predicted by the theory and kinetic data taken in ground-based experiments utilizing a plasma asher.

Fromhold, Albert T., Jr.↗
NASA NTRS1987

A comparative review of optical surface contamination assessment techniques

This paper will review the relative sensitivities and practicalities of the common surface analytical methods that are used to detect and identify unwelcome adsorbants on optical surfaces. The compared methods include visual inspection, simple reflectometry and transmissiometry, ellipsometry, infrared absorption and attenuated total reflectance spectroscopy (ATR), Auger electron spectroscopy (AES), scanning electron microscopy (SEM), secondary ion mass spectrometry (SIMS), and mass accretion determined by quartz crystal microbalance (QCM). The discussion is biased toward those methods that apply optical thin film analytical techniques to spacecraft optical contamination problems. Examples are cited from both ground based and in-orbit experiments.

Heaney, James B.↗
NASA NTRS1988

Structure of a fluid interface near the critical point

The structure of the liquid-liquid interface of three very different mixtures (carbon disulfide + methanol, methanol + cyclohexane + deuterated cyclohexane, and nitrobenzene + n-decane) has been studied using ellipsometry in the reduced temperature range between 0.0009 and 0.042. Although the elliptical thickness varies by an order of magnitude between these mixtures, the data from all three mixtures can be scaled to the same universal constant by a combined mean-field plus capillary-wave model of the interface. The universal constant determined experimentally is significantly less than the theoretical value.

Schmidt, James W.↗
NASA NTRS1988

Measurement of temperature and emissivity of specularly reflecting glowing bodies

A new method of measuring the thermodynamic temperature of an object as well as the surface emissivity based on laser reflectivity has been developed. By using rotator analyzer ellipsometry, the light reflected from the sample at a specific angle of incidence can be analyzed for its ellipticity. The normal incidence reflectivity and emissivity are then extracted using standard relations. The thermodynamic temperature of the body is obtained simultaneously by measuring the intensity of emitted light at the same angle of incidence. Room temperature measurements are carried out on selected metals to test the system. Elevated temperature measurements on platinum foils show that this technique is reliable and accurate for monitoring and measuring the temperature and emissivity of specularly reflecting, glowing bodies.

Hansen, G. P.↗
NASA NTRS1988

Precision cleaning methods for spacecraft applications

A small CO2 snow cleaning apparatus to clean both molecular films and particles from small and large components and surfaces was constructed. Various types of surfaces were cleaned using the CO2 technique. Vacuum deposited and sputtered metallic coatings such as germanium, aluminum, and silver and silicon wafers, and polished copper conical mirrors were purposely contaminated with everyday aerospace contaminants, including particle fallout and fingerprints. Precleaning characterization by Bidirectional Reflectance Distribution Function (BRDF), ellipsometry, nonvolatile residue, and microscopic particle evaluation served as evaluation of cleaning efficiency. Good results were obtained in trial application.

Ryan, L. E.↗
NASA NTRS1988

Characterization of GaAlAs optical waveguide heterostructures grown by molecular beam epitaxy

Multiple-layer GaAlAs optical waveguide heterostructures have been grown by MBE. These samples were designed to operate at 840 nm with negligible coupling of guided light to the absorbing GaAs substrate. The Al concentration was 13 percent for the guiding layer and was 16 percent for the cladding layers. The process for growing waveguide layers was calibrated primarily by high-energy electron diffraction, with the optical quality confirmed by photoluminescence measurements. Channel waveguide structures having widths of 5 microns were etched in a low-pressure magnetically confined multipolar plasma reactor. The resulting waveguide structures were characterized by Raman spectroscopy, ellipsometry, AES, and optical-waveguide loss measurements.

Radens, C. J.↗
NASA NTRS1989

Ellipsometric method for the measurement of temperature and optical constants of incandescent transition metals

The development of a unique noncontact temperature measurement device utilizing rotating analyzer ellipsometry is described. The technique circumvents the necessity of spectral emissivity estimation by direct measurement concomitant with radiance brightness. Simultaneous determinations of dielectric constants and refractive indices allow changes in the physical and chemical state of a heated surface to be monitored. The results of optical property measurements at 633 nm as functions of temperature between 1000 and 2500 K for eight transition metals including Hf, Ir, Mo, Nb, Pd, Pt, Ta, and V are presented together with preliminary results of oxidation studies on iridium.

Hansen, George P.↗
NASA NTRS1989

Chemical profiling of silicon nitride structures

X ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), and scanning electron microscopy (SEM) were used to study structural and chemical inhomogeneities in several electronic materials and device structures of relevance to radiation hard electronics. The systems studied include metal nitride oxide semiconductor (MNOS) structures, silicon oxynitride (SiO(x)N(y)) formed by the thermal nitridation of SiO2, and semiconductor on insulator (SOI) structures. Studies of MNOS structures suggest that the effect of H2 annealing is to make the Si3N4/SiO2 interface less abrupt by causing interdiffusion of silanol and silamine groups with subsequent oxynitride formation. Another effect of the annealing appears to be to relieve the strain at the SiO2/Si interface.

Vasquez, R. P.↗
NASA NTRS1989

Spectral emissivities and optical constants of electromagnetically levitated liquid metals as functions of temperature and wavelength

The development of a noncontact temperature measurement device utilizing rotating analyzer ellipsometry is described. The technique circumvents the necessity of spectral emissivity estimation by direct measurement concomittant with radiance brightness. Using this approach, the optical properties of electromagnetically levitated liquid metals Cu, Ag, Au, Ni, Pd, Pt, and Zr were measured in situ at four wavelengths and up to 600 K superheat in the liquid. The data suggest an increase in the emissivity of the liquid compared with the incandescent solid. The data also show moderate temperature dependence of the spectral emissivity. A few measurements of the optical properties of undercooled liquid metals were also conducted. The data for both solids and liquids show excellent agreement with available values in the literature for the spectral emissivities as well as the optical constants.

Krishnan, S.↗
NASA NTRS1990

Dielectric function of InGaAs in the visible

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X(0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

Alterovitz, S. A.↗
NASA NTRS1989

Ellipsometric study of Al2O3/Ag/Si and SiO2/Ag/quartz ashed in an oxygen plasma

The growth of silver oxide (proposed as a potentially useful protective coating for space environment) on a silver mirror coated with an Al2O3 or a SiO2 protective layer was investigated using the monolayer-sensitive variable angle of incidence spectroscopic ellipsometry technique. The samples were exposed to a pure oxygen plasma in a plasma asher, and the silver oxide growth was monitored as a function of the exposure time. It was found that atomic oxygen in the asher penetrated through the SiO2 or Al2O3 coatings to convert the silver underneath to silver oxide, and that the quantity of the silver oxide formed was proportional to the ashing time. The band gap of silver oxide was determined to be 1.3 eV. A schematic diagram of the variable angle of incidence spectroscopic ellipsometer is included.

De, Bhola N.↗
NASA NTRS1990

Universal adsorption at the vapor-liquid interface near the consolute point

The ellipticity of the vapor-liquid interface above mixtures of methylcyclohexane (C7H14) and perfluoromethylcyclohexane (C7F14) has been measured near the consolute point T(c) = 318.6 K. The data are consistent with a model of the interface that combines a short-ranged density-vs height profile in the vapor phase with a much longer-ranged composition-versus-height profile in the liquid. The value of the free parameter produced by fitting the model to the data is consistent with results from two other simple mixtures and a mixture of a polymer and solvent. This experiment combines precision ellipsometry of the vapor-liquid interface with in situ measurements of refractive indices of the liquid phases, and it precisely locates the consolute point.

Schmidt, James W.↗
NASA NTRS1989

Study of indium tin oxide films exposed to atomic axygen

A qualitative simulation of the effects of atomic oxygen has been conducted on indium tin oxide (ITO) films prepared by dc sputtering onto room-temperature substrates, by exposing them to an RF-excited oxygen plasma and characterizing the resulting changes in optical, electrical, and structural properties as functions of exposure time with ellipsometry, spectrophotometry, resistivity, and X-ray measurements. While the films thus exposed exhibit reduced resistivity and optical transmission; both of these effects, as well as partial crystallization of the films, may be due to sample heating by the plasma. Film resistivity is found to stabilize after a period of exposure.

Snyder, Paul G.↗
NASA NTRS1990

Ellipsometric study of cubic SiC

Variable angle spectroscopic ellipsometry (VASE) was applied to cubic SiC. This technique gives absolute values of the refractive index (n) and the extinction coefficient (k) of a substrate and/or a thin film of unknown material. The samples were grown by chemical vapor deposition (CVD) on p-type silicon. The substrate was aligned either on the (001) axis or 1 degree of (001). Several growth temperatures and growth durations were used. The samples were divided into two groups: (1) thick films of order 10 microns grown near optimal conditions of temperature, flow, and gas ratio; and (2) thin films of order 100 A grown at various temperatures. The ellipsometric results for samples in group 1 were analyzed using a two-phase model (substrate and ambient). Results show that for wavelengths in the visible, the refractive index of these CVD samples is equal to that reported for single crystal cubic SiC, within the experimental error, which is on the order of 1 percent. However, the extinction coefficient has a relatively large value, even above the band gap. The absorption is sample dependent and has a broad peak in the visible. The results for samples in group 2 were analyzed using a three-phase model (substrate, film, and ambient). The dielectric functions of the film, deducted from the measured n and k, were further analyzed using the effective medium approximation. The results show that the films contain 30 to 40 vol. percent amorphous silicon, i.e., silicon with only short-range order.

Alterovitz, Samuel A.↗
NASA NTRS1990

Ellipsometric study of InGaAs MODFET material

In(x)Ga(1-x)As based MODFET (modulation doped field effect transistor) material was grown by molecular beam epitaxy on semi-insulating InP substrates. Several structures were made, including lattice matched and strained layer InGaAs. All structures also included several layers of In(0.52)Al(0.48)As. Variable angle spectroscopic ellipsometry was used to characterize the structures. The experimental data, together with the calibration function for the constituent materials, were analyzed to yield the thickness of all the layers of the MODFET structure. Results of the ellipsometrically determined thicknesses compare very well with the reflection high energy electron diffraction in situ thickness measurements.

Alterovitz, S. A.↗
NASA NTRS1991

Ellipsometric study of metal samples

Exposed and unexposed (shielded) portions of the surfaces of six different metal samples (Al, Cu, Ni, Ta, W, and Zr) that had been mounted on LDEF were studied by variable angle spectroscopic ellipsometry. The change in the optical constants of the metals caused by exposure to the space environment was measured. The measured optical constants reflect changes in the morphology and stoichiometry of a surface layer to a depth of this order of magnitude. For all the samples examined in this manner the exposed and unexposed portions exhibited dramatically different optical properties. In order to determine whether the observed changes were caused by the impact of oxygen atoms encountered in flight an experiment was set up in which samples identical to the original metal samples are exposed to a low-energy oxygen plasma in a microwave discharge chamber. Results of this experiment are reported, as well as an analysis of the observed data in terms of surface layers of different composition.

Franzen, W.↗