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At least 613 records · Page 34
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Crystal Growth and Electronic Properties of LaSbSe

The ZrSiS-type materials have gained intensive attentions. The magnetic version of the ZrSiS-type materials, LnSbTe (Ln = Lanthanide), offers great opportunities to explore new quantum states owing to the interplay between magnetism and electronic band topology. Here, we report the growth and characterization of the non-magnetic LaSbSe of this material family. We found the metallic transport, low magnetoresistance and non-compensated charge carriers with relatively low carrier density in LaSbSe. The specific heat measurement has revealed distinct Sommerfeld coefficient and Debye temperature in comparison to LaSbTe. Such addition of a new LnSbSe selenide compound could provide the alternative material choices in addition to LnSbTe telluride materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1975

A sample holding technique for study of crystal growth in silicate melts

A thin platinum wire loop is an effective way to hold silicate melts during experimentation in a gas-mixing furnace. This method results in a minimum of physical and chemical interaction between the sample and container but maximum interaction between sample and gas mixture. However, volatilization of sodium occurs while the silicate is molten. By minimizing the chance of heterogeneous nucleation, the method is ideal for experimental investigation of the origin of rock textures.

Donaldson, C. H.↗
NASA NTRS1979

Automated control of crystal growth

Optical sensors detect liquid/crystal-interface growth parameters. Technique enables automation by using cold-cathode-discharge sensors and linear imaging devices to determine process status and direct growth process.

Hatch, A.↗
NASA NTRS1979

Crystal growth of device quality GaAs in space

The optimization of space processing of GaAs is described. The detailed compositional, structural, and electronic characterization of GaAs on a macro- and microscale and the relationships between growth parameters and the properties of GaAs are among the factors discussed. The key parameters limiting device performance are assessed.

Gatos, H. C.↗
NASA NTRS1979

The role of thermophysics in the design, optimization and understanding of semiconductor crystal growth in space

The compound semiconductor material PbSnTe has been investigated by NASA Langley Research Center as part of the Material Processing in Space (MPS) experiment in the framework of the Space Shuttle program. The long-range goal of the research is the improving of the performance of infrared detectors for use in remote sensing experiments. Three distinct techniques will be used in the low-g environment of space: two techniques involving bulk growth from melt and a vapor growth technique. In order to establish realistic estimates of the required time for experiments and to determine the thermal gradients that will be required to avoid constitutional supercooling, the diffusion coefficients must be accurately measured, however more data especially in the vapor-solid phase relations are needed.

Crouch, R. K.↗
NASA NTRS1982

Approximate analysis of thermal convection in a crystal-growth cell for Spacelab 3

The transient and steady thermal convection in microgravity is described. The approach is applicable to many three dimensional flows in containers of various shapes with various thermal gradients imposed. The method employs known analytical solutions to two dimensional thermal flows in simpler geometries, and does not require recourse to numerical calculations by computer.

Dressler, R. F.↗
NASA NTRS1979

Crystal growth by precipitation under microgravity

The importance of understanding the mechanisms associated with defect generation during growth and the influence of gravity is stressed. An experiment is described. The advantages of adapting this experiment to the FES are then discussed. A brief survey of the ground based research under way is given.

Authier, A.↗
NASA NTRS1979

Convective and morphological instability in vapor crystal growth

Theoretical and experimental work on the fluid dynamics of physical vapor transport is reported. It is shown that diffusion in viscous interaction with container walls leads to concentration gradients normal to the main transport direction. Consequently any convection threshold is removed. This coupling with convective instabilities makes the theoretical interpretation of earthbound (anisotropic) morphological stability studies on vapor-solid interfaces intractable. Hence low-gravity experiments are suggested that will allow for the establishment of morphological stability criteria under diffusion controlled conditions.

Rosenberger, F.↗
NASA NTRS1983

Thermal Modeling of Bridgman Crystal Growth

Heat Flow modeled for moving or stationary rod shaped sample inside directional-solidification furnace. Program effectively models one-dimensional heat flow in translating or motionless rod-shaped sample inside of directionalsolidification furnace in which adiabatic zone separates hot zone and cold zone. Applicable to systems for which Biot numbers in hot and cold zones are less than unity.

Cothran, E.↗
NASA NTRS1982

An analytical approach to thermal modeling of Bridgman-type crystal growth. I - One-dimensional analysis

A relatively simple one-dimensional thermal model of the Bridgman growth process has been developed which is applicable to the growth of small diameter samples with conductivities similar to those of metallic alloys. The heat flow in a translating rod is analyzed in a way that is applicable to Biot numbers less than unity. The model accommodates an adiabatic zone, different heat transfer coefficients in the hot and cold zones, and changes in sample material properties associated with phase change. The analysis is applied to several simplified cases. The effect of the rod's motion is studied in a three-zone furnace for a rod sufficiently long that end effects can be neglected; end effects are then investigated for a motionless rod. Finally, the addition of a fourth zone, an independently controlled booster heater between the main heater and the adiabatic zone, is evaluated for its ability to increase the gradient in the sample at the melt interface and to control the position of the interface.

Naumann, R. J.↗
NASA NTRS1984

Overview of Bulk Silicon Crystal Growth

The Czochralski and float-zone techniques are reviewed and the consequences of high growth rates in the growth of electronic grade silicon are examined. Impurity segregation coefficients are defined.

Source record↗
NASA NTRS1984

The absence of convective stability in incongruent crystal growth on Earth

It is often assumed that convection can be excluded in materials processing by avoiding horizontal temperature gradients, and employing top-heating and horizontal interfaces. Model calculations for vapor transport processes show that this supposition holds only for strictly congruent vapor-solid transitions. This result can be generalized to all fluid-solid phase transitions. Due to the omnipresence of impurity segregation, it is concluded that convective stability is practically unattainable in materials processing on Earth.

Rosenberger, F. E.↗