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At least 613 records · Page 34

Thermal expansion of the hexagonal (6H) polytype of silicon carbide

X-ray diffraction is presently used to determine the thermal expansion of the hexagonal (6H) polytype of alpha-SiC over the 20-1000 C range. The principal (alpha-11 and alpha-33) axial coefficients of thermal expansion can be expressed by second-order polynomials; the former is noted to be larger than the latter over the entire temperature range, while the thermal expansion anisotropy increases continuously with increasing temperature. The thermal expansion and thermal expansion anisotropy obtained are compared with previously published results for the (6H) polytype, and discussed with respect to the structure.

Li, Z.↗

Improved Consolidation Of Silicon Carbide

Colloidal techniques used to improve dispersion and suspension of SiC in water. In combination with slurry pressing, resulted in increase in strength of sintered SiC by 87 percent over SiC sintered after dry pressing. Improvement due to reduced porosity and reflected in improved densities of "green" and sintered specimens. Smaller sizes of pores, and reduced sizes of critical flaws contributed to increase in strength. Useful for making parts from particulate-, transformation-, and whisker-toughened ceramics and monolithic ceramics. Provides avenue for study of variables contributing to reliability of current structural ceramics.

Freedman, Marc R.↗

Microwave and millimeter-wave power generation in silicon carbide avalanche devices

Numerical simulations were performed to investigate the typical power-generating capabilities of SiC IMPATT diodes. Using available material parameters, SiC double-drift IMPATT diodes were simulated at 10, 35, 60, and 94 GHz, and the operating characteristics of these devices were compared to those of Si and GaAs devices. Compared to the Si and GaAs IMPATT performances in the pulsed mode, the SiC IMPATT performance was found to be far superior. The performance of SiC devices in the CW mode was also superior to that of GaAs devices, especially at lower frequencies. At a high frequency (94 GHz), the performance of the SiC device was found to be comparable to that of Si devices.

Mehdi, I.↗

Properties of silicon carbide fiber-reinforced silicon nitride matrix composites

The mechanical properties of NASA Lewis developed SiC/RBSN composites and their thermal and environmental stability havd been studied. The composites consist of nearly 30 vol pct of aligned 142 micron diameter chemically vapor-deposited SiC fibers in a relatively porous silicon nitride matrix. In the as-fabricated condition, the unidirectional and 2-D composites exhibited metal-like stress-strain behavior, graceful failure, and showed improved properties when compared with unreinforced matrix of comparable density. Furthermore, the measured room temperature tensile properties were relativley independent of tested volume and were unaffected by artifical notches normal to the loading direction or by thermal shocking from temperatures up to 800 C. The four-point bend strength data measured as a function of temperature to 1400 C in air showed that as-fabricated strength was maintained to 1200 C. At 1400 C, however, nearly 15 pct loss in strength was observed. Measurement of room temperature tensile strength after 100 hr exposure at temperatures to 1400 C in a nitrogen environment indicated no loss from the as-fabricated composite strength. On the other hand, after 100 hr exposure in flowing oxygen at 1200 and 1400 C, the composites showed approximately 40 pct loss from their as-fabricated ultimate tensile strength. Those exposed between 400 to 1200 C showed nearly 60 pct strength loss. Oxidation of the fiber/matrix interface as well as internal oxidation of the porous Si3N4 matrix are likely mechanisms for strength degradation. The excellent strength reproducibility, notch insensitivity, and high temperature strength of the composite makes it an ideal candidate for advanced heat engine applications provided coating or densification methods are developed to avoid internal oxidation attack.

Bhatt, Ramakrishna T.↗

Effect of processing on fracture toughness of silicon carbide as determined by Vickers indentations

Several alpha-SiC materials were processed by hot isostatic pressing (HIPing) and by sintering an alpha-SiC powder containing boron and carbon. Several beta-SiC materials were processed by HIPing a beta-SiC powder with boron and carbon additions. The fracture toughnesses K(sub 1c) of these beta- and alpha-SiC materials were estimated from measurements of Vickers indentations. The three formulas used to estimate K(sub 1c) from the indentation fracture patterns resulted in three ranges of K(sub 1c) estimates. Furthermore, each formula measured the effects of processing differently. All three estimates indicated that fine-grained HIPed alpha-SiC has a higher K(sub 1c) than coarsed-grained sintered alpha-SiC. Hot isostatically pressed beta-SiC, which had an ultrafine grain structure, exhibited a K(sub 1c) comparable to that of HIPed alpha-SiC.

Dannels, Christine M.↗

Microwave and millimeter-wave power generation in silicon carbide (SiC) IMPATT devices

There are two points that should be noted. First, in the thermal resistance calculations it is assumed that the device is operating at 773 K while the results of the room temperature simulations are used. This was done because there is not enough information to correctly predict the material parameters at 773 K. Since, in general, device performance degrades with increasing temperature, the cw results are perhaps a bit optimistic. Second, the electric field in these structures gets extremely high and there might be some possibility of tunneling. This was not incorporated into the simulation. Again, this could result in different device operating conditions.

Mehdi, I.↗

Strength distribution in commercial silicon carbide materials

Four-point flexural strength testing has been conducted in order to establish the baseline strength and reliability of four different commercial SiC types, in conjunction with reliable Weibull modulus values. Average strength of the samples ranged from 380 to 482 MPa at room temperature and 307 to 470 MPa at 1370 C. The strength scatter reflects the effect of flaw variability, which must be minimized to improve reliability in sintered SiC.

Dutta, Sunil↗

Interstellar silicon carbide - How much older than the solar system?

The SiC grains in C2 chondrites have large isotopic anomalies in Si, C, N, Ne, and Xe, and thus are virtually undegraded interstellar matter that survived formation of the solar system. They also contain excess Ne-21, of which only a minor part can have formed during the recent, 1 Myr cosmic-ray exposure of the meteorite. If the excess Ne-21 is cosmogenic, then the presolar exposure age of the SiC is 41 + 20 or - 14 Myr. This age is surprisingly short compared to the predicted lifetime of refractory interstellar grains, 500-1000 Myr. Possible explanations are: (1) the predicted grain lifetime is wrong, (2) the age of SiC has been falsified by neon losses, or (3) the solar system formed in part from atypically young material.

Ming, Tang↗

Surface studies relevant to silicon carbide chemical vapor deposition

Reactions of C2H4, C3H8, and CH4 on the Si(111) surface and C2H4 on the Si(100) surface were investigated for surface temperatures in the range of 1062-1495 K. Results led to the identification of the reaction products, a characterization of the solid-state transport process, a determination of the nucleation mechanism and growth kinetics, and an assessment of orientation effects. Based on these results and on the modeling studies of Stinespring and Wormhoudt (1988) on the associated gas phase chemistry, a physical model for the two-step beta-SiC CVD process is proposed.

Stinespring, C. D.↗

Pressure effects on the thermal stability of silicon carbide fibers

Commercially available polymer derived SiC fibers were treated at temperatures from 1000 to 2200 C in vacuum and argon gas pressure of 1 and 1360 atm. Effects of gas pressure on the thermal stability of the fibers were determined through property comparison between the pressure treated fibers and vacuum treated fibers. Investigation of the thermal stability included studies of the fiber microstructure, weight loss, grain growth, and tensile strength. The 1360 atm argon gas treatment was found to shift the onset of fiber weight loss from 1200 to above 1500 C. Grain growth and tensile strength degradation were correlated with weight loss and were thus also inhibited by high pressure treatments. Additional heat treatment in 1 atm argon of the fibers initially treated at 1360 atm argon caused further weight loss and tensile strength degradation, thus indicating that high pressure inert gas conditions would be effective only in delaying fiber strength degradation. However, if the high gas pressure could be maintained throughout composite fabrication, then the composites could be processed at higher temperatures.

Jaskowiak, Martha H.↗

Improved silicon carbide for advanced heat engines. I - Process development for injection molding

Alternate processing methods have been investigated as a means of improving the mechanical properties of injection-molded SiC. Various mixing processes (dry, high-sheer, and fluid) were evaluated along with the morphology and particle size of the starting beta-SiC powder. Statistically-designed experiments were used to determine significant effects and interactions of variables in the mixing, injection molding, and binder removal process steps. Improvements in mechanical strength can be correlated with the reduction in flaw size observed in the injection molded green bodies obtained with improved processing methods.

Whalen, Thomas J.↗

High-frequency ultrasonic characterization of sintered silicon carbide

High-frequency 60- to 160-MHz ultrasonic nondestructive evaluation was used to characterize variations in density and microstructural constituents of sintered SiC bars. Ultrasonic characterization methods included longitudinal velocity, reflection coefficient, and precise attenuation measurements. The SiC bars were tailored to provide bulk densities ranging from 90 to 98 percent of theoretical, average grain sizes ranging from 3.0 to 12.0 microns, and average pore sizes ranging from 1.5 to 4.0 microns. Velocity correlated with specimen bulk density irrespective of specimen average grain size, average pore size, and average pore orientation. The attenuation coefficient was found to be sensitive to both density and average pore size variations, but was not affected by large differences in average grain size.

Baaklini, George Y.↗

Strength distribution of reinforcing fibers in a Nicalon fiber/chemically vapor infiltrated silicon carbide matrix composite

The strength distribution of fibers within a two-dimensional laminate ceramic/ceramic composite consisting of an eight harness satin weave of Nicalon continuous fiber within a chemically vapor infiltrated SiC matrix was determined from analysis of the fracture mirrors of the fibers. Comparison of the fiber strengths and the Weibull moduli with those for Nicalon fibers prior to incorporation into composites suggests that possible fiber damage may occur either during the weaving or during another stage of the composite manufacture. Observations also indicate that it is the higher-strength fibers which experience the greatest extent of fiber pullout and thus make a larger contribution to the overall composite toughness than do the weaker fibers.

Eckel, Andrew J.↗

Titanium carbide and titania phases on Antarctic ice particles of probable extraterrrestrial origin

Two unique titania-rich particles, found within ancient Antarctic ice have been discovered and characterized, and are believed to be of extraterrestrial origin. Both particles contain abundant submicron-sized crystals of Magneli phases (Ti(n)O(2n-1). In addition, one particle contains a core of TiC. Whereas the Magneli phases would have been stable in the early solar nebula, and so probably formed there, the TiC is more likely to have condensed in the cool, dusty, carbon-rich outer shell of a red giant star. It is suggested that both particles are interplanetary dust particles whose Magneli phases carry a record of the PO2-T conditions of the early solar nebula. It is further suggested that the TiC grain in particle 705 is remnant interstellar dust.

Zolensky, M. E.↗

Silicon carbide and the origin of interstellar carbon grains

Experimental evidence is adduced for an interstellar carbon grain formation mechanism in which SiC nucleates at higher temperatures than 900-1100 C in a hydrogen atmosphere to furnish a surface for subsequent carbon condensation. Studies comparing the spatial distribution of the 11.2-micron SiC feature, or its spectral shape, with thermal dust emission, may further elucidate the present relationship. The model is also consistent with recent laboratory studies which have identified grains of SiC as a constituent of primitive meteorites.

Frenklach, M.↗

Hot isostatic pressing of silicon nitride with boron nitride, boron carbide, and carbon additions

Si3N4 test bars containing additions of BN, B4C, and C, were hot isostatically pressed in Ta cladding at 1900 and 2050 C to 98.9 percent to 99.5 percent theoretical density. Room-temperature strength data on specimens containing 2 wt pct BN and 0.5 wt pct C were comparable to data obtained for Si3N4 sintered with Y2O3, Y2O3 and Al2O3, or ZrO2. The 1370 C strengths were less than those obtained for additions of Y2O3 or ZrO2 but greater than those obtained from a combination of Y2O3 and Al2O3. SEM fractography indicated that, as with other types of Si3N4, room-temperature strength was controlled by processing flaws. The decrease in strength at 1370 C was typical of Si3N4 having an amorphous grain-boundary phase. The primary advantage of nonoxide additions appears to be in facilitating specimen removal from the Ta cladding.

Mieskowski, Diane M.↗

Indentation fracture toughness of sintered silicon carbide in the Palmqvist crack regime

The fracture toughness of a sintered dense alpha-SiC was estimated by the Vickers indentation microfracture method in the low-load Palmqvist crack regime. It was observed that the use of simultaneously obtained Vickers hardnesses does not yield reliable fracture toughness values, nor does application of the median-crack-derived equations. It is necessary to utilize a load-independent, crack-free hardness value with this toughness estimation method. Although several of the curve-fitting equations yield similar toughnesses, it is concluded for the Palmqvist crack system in this alpha-SiC that the Niihara-Morena-Hasselman (1982) equation is the only one which yields fracture toughness values in agreement with conventional measurement techniques.

Li, Zhuang↗