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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Estimation of full-field dynamic strains from digital video measurements of output-only beam structures by video motion processing and modal superposition

Strain is an necessary quantity to characterize local structural behaviors and directly correlates with structural damage initiation and development that is within local regions. Strain measurement at high spatial resolution (density) locations is thus required to characterize local structural behaviors and detect potential local damage. Traditional contact-type strain gauges are mostly discrete point-wise sensors that can only be placed in a limited number of positions. Distributed optical fiber sensing techniques can measure strains at spatially dense measurement points, but their instrumentation is a time- and labor-intensive process associated with the issue of the fragility of fibers. Noncontact optical measurement techniques, such as a family of interferometry techniques using laser beams (e.g., laser Doppler vibrometers), can provide vibration measurement at high density spatial points without the need to install sensors on the structure. Yet, these measurement devices are active sensing methods that are relatively expensive and vulnerable to ambient motion. Photogrammetry is an alternative noncontact optical measurement method using (passive) white-light imaging of digital video cameras that are relatively low-cost, agile, and provides simultaneous measurements at high spatial density locations where every pixel becomes a measurement point. Among others, digital image correlation can achieve full-field deformation measurements and subsequently estimate the full-field strains. However, it is computationally extensive. This research develops a new efficient approach to estimate the full-field (as many measurement points as the pixel number of the video frame on the structure) dynamic strains at high-spatial (pixel)-resolution/density location points from the digital video measurement of output-only vibrating structures. The developed approach is based on phase-based video motion estimation and modal superposition of structural dynamic response. Moreover, the method is augmented by a high-fidelity finite element model, which is updated with the full-field experimental modal parameters “blindly” identified from the video measurement of the output-only structure. Laboratory experiments are conducted to validate the method on a bench-scale cantilever beam structure. Results demonstrate that the full-field dynamic strain estimated by the developed approach from the video measurement of the output-only vibrating beam match very well those directly measured by the strain gauges (at discrete measurement points). Some factors associated with the effectiveness of the method are experimentally studied and discussed.

47 OTHER INSTRUMENTATION↗
DOE OSTI2018

Strain-Dependent Electronic and Magnetic of Mg-Doped Monolayer of WS{sub 2}

Magnetic properties of Mg-doped WS{sub 2} monolayer under strain are investigated by ab initio methods. Without strain, the Mg-doped WS{sub 2} monolayer is a magnetic nano material and the total magnetic moment is about 1.68 μ{sub B}. We applied strain to Mg-doped WS{sub 2} monolayer from −10 to 10%. The system changes from semiconductor to half-metallic material from 3 to 10% strain. The magnetic moment gets a maximum value of 2.07 μ{sub B} at −3% compressive strain. However, the magnetic moment of system decreases to zero sharply when compressive strain arrived at −5%. The coupling among the 3s states of Mg, 5d states of W, and 3p states of S is responsible for the strong strain effect on the magnetic properties. Our studies predict Mg-doped WS{sub 2} monolayer under strain to be candidates for application in spintronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Effect of Strain on Magnetic Coupling in Ga-Doped WS{sub 2} Monolayer: Ab Initio Study

Magnetic properties of Ga-doped WS{sub 2} monolayer under strain are investigated by ab initio methods. Without strain, the Ga-doped WS{sub 2} monolayer is a magnetic nanomaterial, and the total magnetic moment is about 0.82 μ{sub B}. We applied strain to Ga-doped WS{sub 2} monolayer from − 10 to 10%. The magnetic properties are modified under different strains, and a maximum magnetic moment reaches 3.09 μ{sub B} at − 3% compressive strain. However, the magnetic moment of system decreases to zero sharply when compressive strain arrived at − 10%. The coupling among Ga 3d, W 5d, and S 3p states is responsible for the strong strain effect on the magnetic properties. Our studies predict Ga-doped WS{sub 2} monolayer under strain to be candidates for application in spintronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

High-Temperature Low-Cycle Fatigue Behavior of HS80H Ferritic–Martensitic Steel Under Dynamic Strain Aging

In this work, low-cycle fatigue tests were performed on HS80H ferritic–martensitic steel with the strain amplitudes ranging from 0.5 to 2.0% at room temperature and 350 °C. The cyclic stress response at 350 °C was found to be different from that at room temperature due to the effect of dynamic strain aging and showed a significant secondary hardening when the strain values were 0.5 and 0.7%. Furthermore, the dynamic strain aging effect also resulted in an abnormal increase in fatigue life when the strain was 0.7%, which was due to the change in elastic strain. Additionally, the elastic strain and fatigue life were bilinear relations in the double logarithmic coordinates. Finally, the transmission electron microscope observations showed that the dynamic strain aging led to the change in substructure, while the grain was refined.

36 MATERIALS SCIENCE↗
DOE OSTI2018

In situ synchrotron X-ray diffraction investigations of the physical mechanism of ultra-low strain hardening in Ti-30Zr-10Nb alloy

A warm-rolled, metastable beta-type Ti-30Zr-10Nb alloy exhibited a peculiar two-stage yielding behavior under uniaxial tensile loading, showing a first plastic stage with obvious strain hardening at 0.4%-10.4% strain and a second plastic stage with ultra-low strain hardening at 10.4%-23.5% strain. In situ high-energy X-ray diffraction (HE-XRD) was used to reveal the stress-induced martensitic transformation scenarios and physical mechanism of the different strain hardening rates. It was found that the deformation-induced phase transformation dominated the onset of the first plastic stage corresponding to the selection of favorable martensitic variants, and their elastic interaction contributed to the obvious strain hardening. HE-XRD experiments further verified that the ultra-low strain hardening rate in the second plastic stage was related to an interesting superelasticity of the martensite, which was characterized by the reversible, stress-induced reorientation of the martensite variants. This reorientation of the martensite variants was primarily due to the rigid lattice rotation of similar to 23 degrees about the [110](α '') axis toward the tensile direction. Here, our investigations provide in-depth understanding of the mechanism of the excellent plasticity with ultra-low strain hardening in beta-type titanium alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Strain induced novel quantum magnetotransport properties of topological insulators

Recent theoretical and experimental researches have revealed that the strained bulk HgTe can be regarded as a three-dimensional topological insulator (TI). Motivated by this, we explore the strain effects on the transport properties of the HgTe surface states, which are modulated by a weak 1D in-plane electrostatic periodic potential in the presence of a perpendicular magnetic field. We analytically derive the zero frequency (dc) diffusion conductivity for the case of quasielastic scattering in the Kubo formalism, and find that, in strong magnetic field regime, the Shubnikov–de Haas oscillations are superimposed on top of the Weiss oscillations due to the electric modulation for null and finite strain. Furthermore, the strain is shown to remove the degeneracy in inversion symmetric Dirac cones on the top and bottom surfaces. This accordingly gives rise to the splitting and mixture of Landau levels, and the asymmetric spectrum of the dc conductivity. These phenomena, not known in a conventional 2D electron gas and even in a strainless TI and graphene, are a consequence of the anomalous spectrum of surface states in a fully stained TI. These results should be valuable for electronic and spintronic applications of TIs, and thus we fully expect to see them in the further experiment. - Highlights: • The strain removes the degeneracy in inversion symmetric Dirac cones. • The strain gives rise to the splitting and mixture of the Landau levels. • The strain leads to the asymmetric spectrum of the dc conductivity. • Shubnikov de Haas oscillations are shown to be superimposed on Weiss oscillations. • Interplay between strain and electric field causes different occupancy of TI states.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Comparative genomic and proteomic analyses of Clostridium acetobutylicum Rh8 and its parent strain DSM 1731 revealed new understandings on butanol tolerance

Highlights: • Genomes of a butanol tolerant strain and its parent strain were deciphered. • Comparative genomic and proteomic was applied to understand butanol tolerance. • None differentially expressed proteins have mutations in its corresponding genes. • Mutations in ribosome might be responsible for the global difference of proteomics. - Abstract: Clostridium acetobutylicum strain Rh8 is a butanol-tolerant mutant which can tolerate up to 19 g/L butanol, 46% higher than that of its parent strain DSM 1731. We previously performed comparative cytoplasm- and membrane-proteomic analyses to understand the mechanism underlying the improved butanol tolerance of strain Rh8. In this work, we further extended this comparison to the genomic level. Compared with the genome of the parent strain DSM 1731, two insertion sites, four deletion sites, and 67 single nucleotide variations (SNVs) are distributed throughout the genome of strain Rh8. Among the 67 SNVs, 16 SNVs are located in the predicted promoters and intergenic regions; while 29 SNVs are located in the coding sequence, affecting a total of 21 proteins involved in transport, cell structure, DNA replication, and protein translation. The remaining 22 SNVs are located in the ribosomal genes, affecting a total of 12 rRNA genes in different operons. Analysis of previous comparative proteomic data indicated that none of the differentially expressed proteins have mutations in its corresponding genes. Rchange Algorithms analysis indicated that the mutations occurred in the ribosomal genes might change the ribosome RNA thermodynamic characteristics, thus affect the translation strength of these proteins. Take together, the improved butanol tolerance of C. acetobutylicum strain Rh8 might be acquired through regulating the translational process to achieve different expression strength of genes involved in butanol tolerance.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2026

Elastic strain engineering of lattice thermal conductivity of silicon: An ab-initio study

Silicon (Si) is the most essential material in the semiconductor industry. It is important to manage the thermal properties of crystalline Si. Elastic strain engineering (ESE) has proven to be an effective tool in controlling the electrical conductivity of Si in strained-silicon technology; its effects on the thermal conductivity of silicon, therefore, warrants careful investigation. The ESE effect is much more pronounced for nanostructured materials due to the ultralarge elastic strains (on the order of 10%) achievable at the nanoscale. In this work, the lattice thermal conductivity (κ L ) of Si under hydrostatic, biaxial, and uniaxial strain states is studied with ab-initio simulations, and the values of strain-dependent κ L compare well with experimental results and existing molecular dynamics simulations. To understand the mechanisms of strain-modulated κ L , the phonon bands, scattering rate, and Grüneisen parameters of phonon modes are computed. It is shown that strain can significantly change the anharmonicity of the crystal system, thus changing phonon scattering rates and κ L . Our results demonstrate that ESE can reduce silicon κ L by up to approximately 90%. Furthermore, uniaxial and biaxial strains can induce highly anisotropic thermal conductivity in Si, with relative variations up to 58.5% and 14.5%, respectively.

Anisotropy in Thermal Conductivity↗
DOE OSTI2020

Experimental investigation of multi-scale strain-field heterogeneity in rocks

Rocks have inherently heterogeneous micro-structures. The mechanical response of these heterogeneous micro-structures primarily governs the overall macroscopic behavior of intact rocks, as these features cause heterogeneity in the distribution of stress and strain within a rock volume. These attributes have generally been studied through numerical tools, but in this study, the stress-induced multi-scale spatial heterogeneity in the strain-field of three types of rocks was analyzed experimentally. The full-field non-contact strain measurement approach of 2D Digital Image Correlation (DIC) was employed for real-time evaluation of the progression of strain-field heterogeneity across the surface of the rock specimens when subjected to uniaxial compression. The results show that the strain-field heterogeneity is a characteristic of the inherent heterogeneity of the rock specimens, and that it amplifies with the magnitude of stress applied on the rock specimens. The changes in the strain-field heterogeneity with loading were consistent with established microcrack evolution processes in the rock specimens. The statistical fluctuation in the strain-field heterogeneity of the three rocks at varying gauge lengths (GL) was then analyzed for the determination of the Representative Volume Element (RVE) length-scale at increasing load levels. The evolution of the RVE length-scale with loading facilitates an objective way of determination of the stress at which the strain-field heterogeneity increases and begins to influence the overall global response of the material. The RVE length-scale variation with loading showed that at the RVE length-scale reaches the specimen-scale at load levels well below the peak strength.

2D-digital image correlation↗
DOE OSTI2013

Development of crystallographic-orientation-dependent internal strains around a fatigue-crack tip during overloading and underloading

In-situ neutron diffraction was employed to directly measure the crystallographic-orientation-dependent (i.e. hkl) internal strains as a function of distance from the crack tip on the pre-cracked Hastelloy C-2000 compact-tension specimen. Both in-plane (IP) and through-thickness (TT) strain evolutions for various grain orientations were examined during tensile overloading and compressive underloading cycles. After overloading, underloading and their combination loadings were applied and unloaded, the significantly different (hkl) residual strain profiles were obtained in the vicinity of the crack tip. The load responses of the (200) grain orientation in both the IP and TT directions were more significant than those of any other orientations. It is suggested that the different orientation-dependent strain distributions around the crack tip are caused by the combined effects of elastic and plastic anisotropy of each (hkl) reflection upon loading and the subsequent development of residual stresses generated near the crack tip during unloading as a result of the plastic deformation. - Highlights: ► (hkl) strains are examined in situ using neutron diffraction. ► Distinct strain responses are developed around the crack tip under loading. ► The strain response of the (200) grain orientation is more significant. ► Possible mechanisms for the orientation-dependent strain responses are provided.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Quantification and evaluation of strain reduction from small-bubble gas injection in Spallation Neutron Source target vessels

Small-bubble gas injection has been routinely utilized in the operation of Spallation Neutron Source (SNS) mercury targets since 2017 to mitigate cavitation-induced erosion damage to target vessels. Strain measurements of target vessels collected in-situ during initial operation with gas injection were used to study the gas injection effect on the structural response of targets to proton pulses. A significant strain reduction owing to gas injection was found by comparing the strain measurement data during operation with and without gas injection. The research presented here focuses on quantifying strain reductions in SNS targets and evaluating the effect of small-bubble gas injection by comparing different bubbler types and target designs. The strain measurement results show the gas injection significantly reduced strain in SNS target vessels; strain values decreased by 30% to 80% for targets operating with gas injection. Stress and strain responses of SNS targets were simulated to numerically evaluate the gas injection effect. Based on the predicted stresses with and without gas injection, the fatigue lifetimes of SNS jet-flow design target were estimated using fe-safe fatigue analysis software. The simulations show these reductions should improve the fatigue life of target vessels and allow SNS targets to meet their fatigue design goal.

Fatigue life estimation↗
DOE OSTI2016

Strain-induced optical band gap variation of SnO 2 films

In this paper, thickness dependent strain relaxation effects are utilized to study the impact of crystal anisotropy on the optical band gap of epitaxial SnO 2 films grown by pulsed laser deposition on (0001)-oriented sapphire substrates. An X-ray diffraction analysis reveals that all films are under tensile biaxial in-plane strain and that strain relaxation occurs with increasing thickness. Variable angle spectroscopic ellipsometry shows that the optical band gap of the SnO 2 films continuously increases with increasing film thickness. This increase in the band gap is linearly related to the strain state of the films, which indicates that the main origin of the band gap change is strain relaxation. The experimental observation is in excellent agreement with results from density functional theory for biaxial in-plane strain. Our research demonstrates that strain is an effective way to tune the band gap of SnO 2 films and suggests that strain engineering is an appealing route to tailor the optical properties of oxide semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A reference-area-free strain mapping method using precession electron diffraction data

Here, in this work, we developed a method using precession electron diffraction data to map the residual elastic strain at the nano-scale. The diffraction pattern of each pixel was first collected and denoised. Template matching was then applied using the center spot as the mask to identify the positions of the diffraction disks. Statistics of distances between the selected diffracted disks enable the user to make an informed decision on the reference and to generate strain maps. Strain mapping on an unstrained single crystal sapphire shows the standard deviation of strain measurement is 0.5%. With this method, we were able to successfully measure and map the residual elastic strain in VO 2 on sapphire and martensite in a Ni 50.3 Ti 29.7 Hf 20 shape memory alloy. This approach does not require the user to select a “strain-free area” as a reference and can work on datasets even with the crystals oriented away from zone axes. This method is expected to provide a robust and more accessible alternative means of studying the residual strain of various material systems that complements the existing algorithms for strain mapping.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

Anisotropic Electron–Phonon Interactions in Angle-Resolved Raman Study of Strained Black Phosphorus

Few-layer black phosphorus (BP) with an in-plane puckered crystalline structure has attracted intense interest for strain engineering due to both its significant anisotropy in mechanical and electrical properties and its high intrinsic strain limit. Here, we investigated the phonon response of few layer BP under uniaxial tensile strain (~7%) with in situ polarized Raman spectroscopy. Together with the first-principles density functional theory (DFT) analysis, the anisotropic Poisson’s ratio in few-layer BP was verified as one of the primary factors that caused the large discrepancy in the trend of reported Raman frequency shift for strained BP, armchair (AC) direction in particular. By carefully including and excluding the anisotropic Poisson’s ratio in the DFT emulations, we rebuilt both trends reported for Raman mode shifts. Furthermore, the angle-resolved Raman spectroscopy was conducted in situ under tensile strain for systematic investigation of the in-plane anisotropy of BP phonon response. The experimentally observed thickness and crystallographic orientation dependence is elaborated using DFT theory as having a strong correlation between the strain-perturbated electronic-band structure and the phonon vibration modes. Furthermore, this study provides insight, both experimentally and theoretically, for the complex electron–phonon interaction behavior in strained BP, which enables diverse possibilities for the strain engineering of electrical and optical properties in BP and similar two-dimensional nanomaterials.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Relaxation and critical strain for maximum In incorporation in AlInGaN on GaN grown by metal organic vapour phase epitaxy

Quaternary AlInGaN layers were grown on conventional GaN buffer layers on sapphire by metal organic vapour phase epitaxy at different surface temperatures and different reactor pressures with constant precursor flow conditions. A wide range in compositions within 30-62% Al, 5-29% In, and 23-53% Ga was covered, which leads to different strain states from high tensile to high compressive. From high-resolution x-ray diffraction and Rutherford backscattering spectrometry, we determined the compositions, strain states, and crystal quality of the AlInGaN layers. Atomic force microscopy measurements were performed to characterize the surface morphology. A critical strain value for maximum In incorporation near the AlInGaN/GaN interface is presented. For compressively strained layers, In incorporation is limited at the interface as residual strain cannot exceed an empirical critical value of about 1.1%. Relaxation occurs at about 15 nm thickness accompanied by strong In pulling. Tensile strained layers can be grown pseudomorphically up to 70 nm at a strain state of 0.96%. A model for relaxation in compressively strained AlInGaN with virtual discrete sub-layers, which illustrates the gradually changing lattice constant during stress reduction is presented.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Beneficial compressive strain for oxygen reduction reaction on Pt (111) surface

We investigated the influence of compressive surface strain on the progression of oxygen reduction reaction (ORR) on Pt(111) surface using the density functional theory (DFT) calculation method. Specifically, we calculated the binding energies of all the chemical species possibly involved in ORR and the reaction energies (heat of reaction and activation energy) of all the possible ORR elementary reactions on the Pt(111) surfaces with −2% and −3% strain. Our DFT results indicate that all the ORR species bind more weakly on the compressively strained surfaces than on an unstrained surface owing to strain-induced d-electron band broadening. Our DFT calculations further predict that both OOH dissociation and HOOH dissociation pathways could be active for ORR on the Pt(111) surface with compressive strain between −2% and −3%. Moreover, the activation energies of the ORR rate-determining steps on the compressively strained Pt(111) surfaces were found to be lower than that on the unstrained Pt(111) surface. It was thus inferred that a −2% to −3% surface strain could lead to enhanced ORR activity on the Pt(111) catalysts. Consequently, our study suggests that tuning surface strain is an effective way to improve the performance of Pt-based electrocatalysts for ORR.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Effect of epitaxial strain on small-polaron hopping conduction in Pr{sub 0.7}(Ca{sub 0.6}Sr{sub 0.4}){sub 0.3}MnO{sub 3} thin films

We investigated the epitaxial strain effect on the small-polaron hopping conduction properties in Pr{sub 0.7}(Ca,Sr){sub 0.3}MnO{sub 3} (PCSMO) films. An increase in the carrier localization, as evidenced by the enhancement of the small-polaron activation energy E{sub A} in the high temperature region, was obtained by increasing the epitaxial lattice strain in either the tensile or compressive strained film. Furthermore, it was found that the magnitude of E{sub A}, and thus the carrier localization, strongly depends on the sign of the lattice strain, which explains the diverse percolative transport behaviors in PCSMO films with different types of strains. Meanwhile, similar dependencies on the strain of the films were also obtained for the electron-phonon interaction, characterized by the calculated small-polaron coupling constant. Our results reveal that the type of lattice strain plays a crucial role in determining the degree of localization of charge carriers and the electron-phonon coupling strength, which is important for understanding the lattice strain-induced various novel properties related to phase separation and percolation behaviors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Dirac points and van Hove singularities of silicene under uniaxial strain

First-principles calculations have been performed to investigate the low energy electronic properties and van Hove singularities (VHSs) of silicene under uniaxial strain. The Dirac points (DPs) persist when silicene is stretched uniaxially, while they are shifted away from the corners (K points) of the first Brillouin zone (FBZ). The relative positions of DPs with respect to the K points for silicene strained along the armchair (AC) or zigzag (ZZ) direction show opposite tendency compared with strained graphene, which is due to the larger deformation of the unit cell of strained silicene than that of strained graphene. Moreover, for silicene under AC or ZZ strain, the Fermi velocities around DPs along the positive and negative directions of the FBZ show rather significant difference. The nature of the VHS just above the Fermi energy undergoes a transition from the π* band to the σ* band for silicene under increasing AC or ZZ strain. These observations suggest uniaxial strain as an effective route to tune the electronic properties of silicene for potential applications in future electronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗