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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

In Situ Electrochemical Deposition of Microscopic Wires

A method of fabrication of wires having micron and submicron dimensions is built around electrochemical deposition of the wires in their final positions between electrodes in integrated circuits or other devices in which the wires are to be used. Heretofore, nanowires have been fabricated by a variety of techniques characterized by low degrees of controllability and low throughput rates, and it has been necessary to align and electrically connect the wires in their final positions by use of sophisticated equipment in expensive and tedious post-growth assembly processes. The present method is more economical, offers higher yields, enables control of wire widths, and eliminates the need for post-growth assembly. The wires fabricated by this method could be used as simple electrical conductors or as transducers in sensors. Depending upon electrodeposition conditions and the compositions of the electroplating solutions in specific applications, the wires could be made of metals, alloys, metal oxides, semiconductors, or electrically conductive polymers. In this method, one uses fabrication processes that are standard in the semiconductor industry. These include cleaning, dry etching, low-pressure chemical vapor deposition, lithography, dielectric deposition, electron-beam lithography, and metallization processes as well as the electrochemical deposition process used to form the wires. In a typical case of fabrication of a circuit that includes electrodes between which microscopic wires are to be formed on a silicon substrate, the fabrication processes follow a standard sequence until just before the fabrication of the microscopic wires. Then, by use of a thermal SiO-deposition technique, the electrodes and the substrate surface areas in the gaps between them are covered with SiO. Next, the SiO is electron-beam patterned, then reactive-ion etched to form channels having specified widths (typically about 1 m or less) that define the widths of the wires to be formed. Drops of an electroplating solution are placed on the substrate in the regions containing the channels thus formed, then the wires are electrodeposited from the solution onto the exposed portions of the electrodes and into the channels. The electrodeposition is a room-temperature, atmospheric-pressure process. The figure shows an example of palladium wires that were electrodeposited into 1-mm-wide channels between gold electrodes.

Yun, Minhee↗
NASA NTRS1984

Polycrystalline silicon study: Low-cost silicon refining technology prospects and semiconductor-grade polycrystalline silicon availability through 1988

Photovoltaic arrays that convert solar energy into electrical energy can become a cost effective bulk energy generation alternative, provided that an adequate supply of low cost materials is available. One of the key requirements for economic photovoltaic cells is reasonably priced silicon. At present, the photovoltaic industry is dependent upon polycrystalline silicon refined by the Siemens process primarily for integrated circuits, power devices, and discrete semiconductor devices. This dependency is expected to continue until the DOE sponsored low cost silicon refining technology developments have matured to the point where they are in commercial use. The photovoltaic industry can then develop its own source of supply. Silicon material availability and market pricing projections through 1988 are updated based on data collected early in 1984. The silicon refining industry plans to meet the increasing demands of the semiconductor device and photovoltaic product industries are overviewed. In addition, the DOE sponsored technology research for producing low cost polycrystalline silicon, probabilistic cost analysis for the two most promising production processes for achieving the DOE cost goals, and the impacts of the DOE photovoltaics program silicon refining research upon the commercial polycrystalline silicon refining industry are addressed.

Costogue, E. N.↗
NASA NTRS1983

Efficient Silicon Reactor

High-purity silicon efficiently produced and transferred by continuous two-cycle reactor. New reactor operates in relatively-narrow temperature rate and uses large surfaces area to minimize heat expenditure and processing time in producing silicon by hydrogen reduction of trichlorosilane. Two cycles of reactor consists of silicon production and removal.

Bates, H. E.↗
NASA NTRS1990

Parallel asynchronous hardware implementation of image processing algorithms

Research is being carried out on hardware for a new approach to focal plane processing. The hardware involves silicon injection mode devices. These devices provide a natural basis for parallel asynchronous focal plane image preprocessing. The simplicity and novel properties of the devices would permit an independent analog processing channel to be dedicated to every pixel. A laminar architecture built from arrays of the devices would form a two-dimensional (2-D) array processor with a 2-D array of inputs located directly behind a focal plane detector array. A 2-D image data stream would propagate in neuron-like asynchronous pulse-coded form through the laminar processor. No multiplexing, digitization, or serial processing would occur in the preprocessing state. High performance is expected, based on pulse coding of input currents down to one picoampere with noise referred to input of about 10 femtoamperes. Linear pulse coding has been observed for input currents ranging up to seven orders of magnitude. Low power requirements suggest utility in space and in conjunction with very large arrays. Very low dark current and multispectral capability are possible because of hardware compatibility with the cryogenic environment of high performance detector arrays. The aforementioned hardware development effort is aimed at systems which would integrate image acquisition and image processing.

Coon, Darryl D.↗
NASA NTRS2005

Making Wide-IF SIS Mixers with Suspended Metal-Beam Leads

A process that employs silicon-on-insulator (SOI) substrates and silicon (Si) micromachining has been devised for fabricating wide-intermediate-frequency-band (wide-IF) superconductor/insulator/superconductor (SIS) mixer devices that result in suspended gold beam leads used for radio-frequency grounding. The mixers are formed on 25- m-thick silicon membranes. They are designed to operate in the 200 to 300 GHz frequency band, wherein wide-IF receivers for tropospheric- chemistry and astrophysical investigations are necessary. The fabrication process can be divided into three sections: 1. The front-side process, in which SIS devices with beam leads are formed on a SOI wafer; 2. The backside process, in which the SOI wafer is wax-mounted onto a carrier wafer, then thinned, then partitioned into individual devices; and 3. The release process, in which the individual devices are separated using a lithographic dicing technique. The total thickness of the starting 4-in. (10.16-cm)-diameter SOI wafer includes 25 m for the Si device layer, 0.5 m for the buried oxide (BOX) layer, and 350 m the for Si-handle layer. The front-side process begins with deposition of an etch-stop layer of SiO2 or AlN(x), followed by deposition of a Nb/Al- AlN(x) /Nb trilayer in a load-locked DC magnetron sputtering system. The lithography for four of a total of five layers is performed in a commercial wafer-stepping apparatus. Diagnostic test dies are patterned concurrently at certain locations on the wafer, alongside the mixer devices, using a different mask set. The conventional, self-aligned lift-off process is used to pattern the SIS devices up to the wire level.

Kaul, Anupama↗
DOE OSTI2026

Development of large-scale, 3D Printed high temperature ceramic material

Through this collaborative effort, a new 3D printing platform for ceramics called laser-induced slip casting (LIS) was explored and developed for improving the processing and manufacture of silicon carbide (SiC), a high temperature ceramic material. This method prints layers of ceramic slips/slurries with subsequent selective-laser heating to dry each layer to build a 3D structure. The completed and dried part is then sintered. This manufacturing process is inherently lower cost than alternative ceramic printing methods such as binder jet technology or stereolithography when it comes to the feedstock material but is more expensive than robocasting or direct ink writing. However, it has the potential to make more controlled parts with less defects compared to robocasting. The largest cost is the heating source for the printer. With this technique, there is potential to make large ceramic parts in a near-net shape. Further, there is no known commercial manufacturing of 3D printed ceramics that creates a large range of different high-density ceramics at large scale. The goals and outcomes for the development of the new printing technology were: 1) assessing the technology with alumina by characterizing coupons, 2) printing and sintering of silicon carbide (SiC), and 3) characterization and properties testing of materials printed and a scale-up of SiC part(s). Through this collaborative project, it was sought to provide the best solution to achieving highly dense and near-net shaped ceramic parts at large scale and reduced cost. The goal was to produce high density sintered materials for applications in defense, energy generating systems, armor, and wear parts using 3D printing methods. Variables including powder particle sizes, dispersant molecular weights (MWs), binders, printing parameters, and post processing were explored as well as the characterization of the physical properties (add specifics here).

36 MATERIALS SCIENCE↗
NASA NTRS1974

Crack nucleation in Fe-3% Si in a hydrogen environment

An investigation has been made of the grain-size and strain-rate dependence of the crack nucleation process in iron-3% silicon polycrystals tested in a low-pressure hydrogen environment. The results are compared with similar observations made in an air environment and are discussed in terms of the role of hydrogen on the process of crack nucleation in iron.

Kamdar, M. H.↗
NASA NTRS1993

Advanced Turbine Technology Applications Project (ATTAP)

This report is the fifth in a series of Annual Technical Summary Reports for the Advanced Turbine Technology Applications Project (ATTAP), sponsored by the U.S. Department of Energy (DOE). The report was prepared by Garrett Auxiliary Power Division (GAPD), a unit of Allied-Signal Aerospace Company, a unit of Allied Signal, Inc. The report includes information provided by Garrett Ceramic Components, and the Norton Advanced Ceramics Company, (formerly Norton/TRW Ceramics), subcontractors to GAPD on the ATTAP. This report covers plans and progress on ceramics development for commercial automotive applications over the period 1 Jan. through 31 Dec. 1992. Project effort conducted under this contract is part of the DOE Gas Turbine Highway Vehicle System program. This program is directed to provide the U.S. automotive industry the high-risk, long-range technology necessary to produce gas turbine engines for automobiles with reduced fuel consumption, reduced environmental impact, and a decreased reliance on scarce materials and resources. The program is oriented toward developing the high-risk technology of ceramic structural component design and fabrication, such that industry can carry this technology forward to production in the 1990's. The ATTAP test bed engine, carried over from the previous AGT101 project, is being used for verification testing of the durability of next generation ceramic components, and their suitability for service at Reference Powertrain Design conditions. This document reports the technical effort conducted by GAPD and the ATTAP subcontractors during the fifth year of the project. Topics covered include ceramic processing definition and refinement, design improvements to the ATTAP test bed engine and test rigs, and the methodology development of ceramic impact and fracture mechanisms. Appendices include reports by ATTAP subcontractors in the development of silicon nitride materials and processes.

Source record↗
DOE OSTI2022

High-Silicon Steel Strip by Single-Step Shear Deformation Processing

It is well known that Fe-Si alloys with Si content higher than in conventional electrical sheet steels (>3.2% Si) can make a significant impact in improving the efficiency of electrical motors if they are available in sheet/foil (strip) forms at suitable cost. While the magnetic and electrical attributes (e.g., resistivity, core loss) of these high-Si Fe alloys, of relevance to electrical motor core laminations, are known to be exceptional, the alloys have limited workability, making them difficult to produce consistently in sheet/foil (strip) forms. Current processing techniques such as rolling, while adequate for producing conventional electrical steel sheet, do have important disadvantages - large energy consumption and emissions, limitations in processing of low-workability alloys (e.g., high-Si content steels), large-scale plant infrastructure, and less than adequate capability to engineer sheet metals with specific microstructures (e.g., fine-grained) and crystallographic textures (e.g., shear textures). It is therefore of interest to have an alternative commercial process that can produce sheet/foil (strip) from high-Si Fe alloys and which can also overcome some of the deficiencies of current multistage strip processes. The goal of the present project was design and demonstration of a new energy-efficient pilot process for producing high-Si electrical steel strip of commercial widths and thickness, and with superior electrical and magnetic properties than current electrical steels (Fe-3.2% Si as benchmark). The applications domain for these steels is electrical motor core laminations. We have addressed this goal by accomplishment of the following specific objectives and tasks: a) Development of an Fe-4Si-4Cr alloy with electrical resistivity >80 μΩ-cm, induction flux density >1.48 T at 5000 A/m and core loss 35% lower than the benchmark 3.2% Si alloy. The alloy which meets DOE target specifications for motor core attributes was designed with the Si content controlled for the electrical properties and the Cr content tailored to meet material/process workability requirements. b) A unique machining-based deformation processing system was designed and scaled-up to produce strip of commercial width (25 mm to 150 mm) and thickness (up to 0.5 mm) from the Fe-4Si-4Cr alloy and other alloys of varied workability including copper, Al6061-T6 and naval brass. The key attributes of the machining-based strip production are deformation processing by concentrated simple-shear; single-step production of strip from ingot using compact machine infrastructure; strip surface finish of Ra 0.35 to 1 micrometer that is comparable/superior to that of rolled strip; discrete production of strip that can potentially be done at point of use; and controllability of strip mechanical/formability properties by deformation control. c) The electrical, magnetic, surface quality, mechanical, formability, and metallurgical properties/attributes of the machining-based strip were established by direct ASTM standard or equivalent measurement techniques. d) Punching characteristics of the strip in terms of load, edge quality and macro defects were similar to those of conventional 3.2% Si electrical steels. These punching characteristics are critical from a manufacturability perspective for motor/transformer core applications. e) A modeling framework for energy analysis of multistage rolling and the machining-based deformation processing has been established. Application of this modeling to the two strip-processes showed that the machining-based process requires significantly lower specific energy for processing, ~ 25% of that for rolling. The modeling framework can be adapted for a range of sheet-metal forming, bulk metal forming, and machining processes. It can be used to identify key parameters controlling process specific energy. f) A comparative analysis of advantages and disadvantages of machining-based processing against rolling for strip production. The single stage machining-based processing, with compact infrastructure, represents a new manufacturing paradigm for sheet and foil manufacturing that can potentially also be applied to advanced titanium, aluminum, copper and magnesium alloys. The goals and objectives were accomplished by a cross-disciplinary project team comprising of personnel from Purdue University; M4 Sciences LLC, a small-business focused on advanced manufacturing technology development; the Pacific Northwest National Labs; and tool manufacturers. The team is currently in advanced discussions with multiple entities for future process development for commercialization.

36 MATERIALS SCIENCE↗
NASA NTRS1993

Process for the homoepitaxial growth of single-crystal silicon carbide films on silicon carbide wafers

The invention is a method for growing homoepitaxial films of SiC on low tilt angle vicinal (0001) SiC wafers. The invention proposes and teaches a new theoretical model for the homoepitaxial growth of SiC films on (0001) SiC substrates. The inventive method consists of preparing the growth surface of SiC wafers slightly off-axis (from less the 0.1 to 6 deg) from the (0001) plane, subjecting the growth surface to a suitable etch, and then growing the homoepitaxial film using conventional SiC growth techniques.

Powell, J. Anthony↗
NASA NTRS2012

Directionally Solidified Aluminum - 7 wt% Silicon Alloys: Comparison of Earth and International Space Station Processed Samples

Primary dendrite arm spacings of Al-7 wt% Si alloy directionally solidified in low gravity environment of space (MICAST-6 and MICAST-7: Thermal gradient approx. 19 to 26 K/cm, Growth speeds varying from 5 to 50 microns/s show good agreement with the Hunt-Lu model. Primary dendrite trunk diameters of the ISS processed samples show a good fit with a simple analytical model based on Kirkwood s approach, proposed here. Natural convection, a) decreases primary dendrite arm spacing. b) appears to increase primary dendrite trunk diameter.

Grugel, Richard N,↗
NASA NTRS2019

Highly Absorptive Pupil Mask Fabricated with Black Silicon

Many of NASA’s direct imaging of exoplanet missions and projects require fabricated coronagraph masks to control scattering and diffraction of light. The designed, patterned mask intended for the coronagraphic testbeds are highly absorptive in the visible range on non-metallic regions. In this work, we employed the cryogenic etching process to fabricate black silicon (BSi) to achieve a high aspect ratio (HAR) structures with higher etch rate than conventional reactive ion etching (REI). Recent bidirectional reflectance distribution function (BRDF) measurements of uniformly etched BSi on silicon wafer show highly diffusive BSi with a specular reflective component in the orders of seven magnitudes lower than the total hemispherical reflectance when the polarized or non-polarized incident beam is used.

black-silicon↗
NASA NTRS2019

Highly Absorptive Pupil Mask Fabricated with Black Silicon

Many of NASA’s direct imaging of exoplanet missions and projects require fabricated coronagraph masks to control scattering and diffraction of light. The designed, patterned mask intended for the coronagraphic testbeds are highly absorptive in the visible range on non-metallic regions. In this work, we employed the cryogenic etching process to fabricate black silicon (BSi) to achieve a high aspect ratio (HAR) structures with higher etch rate than conventional reactive ion etching (REI). Recent bidirectional reflectance distribution function (BRDF) measurements of uniformly etched BSi on silicon wafer show highly diffusive BSi with a specular reflective component in the orders of seven magnitudes lower than the total hemispherical reflectance when the polarized or non-polarized incident beam is used.

BRDF↗
NASA NTRS1984

An improved process for preparing Tris(N-methylamino)methylsilane monomer for use in producing silicon carbide-silicon nitride fibers

A technique is described for the preparation of tris(N-methylamino)methylsilane by a process which may be used for large-scale production. The steps include synthesis, filtration to remove the salt byproduct, and distillation to remove the product from the reaction mixture under anhydrous conditions. Tris(N-methylamino)methylsilane is a precursor used to prepare silicon carbide-silicon nitride fibers that have been shown to have high tensile modulus (29 x 10 to the 6th psi for 0.4 mil diameter), high tensile strength (10.5 x 10 to the 4th psi), and high electrical resistivity (7 x 10 to the 8th ohm-cm).

Penn, B. G.↗
DOE OSTI2021

Carbohydrate-Containing Conjugated Polymers: Solvent-Resistant Materials for Greener Organic Electronics

Organic semiconducting polymers are exciting materials for electronic applications because of their good mechanical and optoelectronic properties. A major advantage of organic semiconductors is their solution processability. This allows access to a variety of simple and cost-effective device fabrication methods compared to the expensive, high-temperature processing methods required for silicon-based electronics. However, these materials often have low solubility, which limits their processing to toxic halogenated solvents. Also, their limited solubility often leads to interfacial mixing during device fabrication. Herein, this work explores the incorporation of environmentally friendly carbohydrate side chains in conjugated polymers to enhance processability in eco-friendly solvents. Moreover, a mild postprocessing treatment was designed to enable solvent resistance. Isoindigo-based polymers with varied ratios of acetyl-protected galactose side chains were synthesized to improve solubility in o-anisole in the protected state, while inducing solvent resistance through intramolecular hydrogen bonding in the deprotected state. Solvent resistance was confirmed both visually upon submersion in various solvents and using UV–visible spectroscopy. Importantly, the mild basic treatment to achieve solvent resistance has no negative impact on the electronic performance of these materials in organic field-effect transistors, even after subsequent submersion in various solvents, making them a valuable platform for the production of green processable multilayer electronics.

36 MATERIALS SCIENCE↗
NASA NTRS1977

Semiconductor grade, solar silicon purification project

The potential for a three step SiF2 polymer transport purification process was examined. The process involves reacting low cost mg silicon with SiF4 to yield SiF2 gas which is condensed to form polymeric (SiF2)x. The polymer is then heated above 400 C to yield Si, SiF4 and higher Si sub n F sub 2n+2 homologues. This report presents and discusses continuing progress on (1) observations on (SiF2)x polymer formation and depolymerization on the small coil, (2) mass balance studies, (3) partial pressures of SiF2 and SiF4, (4) AlF3 mass spectral studies, and (5) material analysis studies.

Ingle, W. M.↗