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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Nonmagnetic fractional conductance in high mobility InAs quantum point contacts

In this paper, we report the magnetoelectronic properties of high mobility InAs quantum point contacts grown on InP substrates. The InAs quantum well is embedded between In 0.72 ⁢Ga 0.28 ⁢As cladding layers and In 0.81 ⁢Al 0.19 ⁢As barrier layers, and is populated via self-accumulation. The one-dimensional (1D) conductance reaches a maximum value of 17 plateaus, quantized in units of 2⁢𝑒 2 /ℎ, where 𝑒 is the fundamental unit of charge and ℎ is Planck's constant. The in-plane effective 𝑔 factor was estimated to be −10.9 ± 1.5 for subband 𝑁 = 1 and −10.8 ± 1.6 for subband 𝑁 = 2. Furthermore, a study of the nonmagnetic fractional conductance states at 0.2 (𝑒 2 /ℎ) and 0.1 (𝑒 2 /ℎ) is provided. While their origin remains under discussion, evidence suggests that they arise from strong electron-electron interactions and momentum-conserving backscattering between electrons in two distinct channels within the 1D region. This phenomenon may also be interpreted as an entanglement between the two channel directions facilitated by momentum-conserving backscattering.

Ballistic transport↗
DOE OSTI2026

Buried Dirac Points in Quantum Spin Hall Insulators: Implications for Majorana Kramers Pair-Based Quantum Computing

Quantum spin Hall insulators (QSHIs) host helical electronic edge states that are protected from backscattering due to time-reversal symmetry (TRS). Despite considerable work investigating QSHI edge states, there is still an open question about their unexpected resilience to large magnetic fields where TRS is undoubtedly broken. In this work, we investigate the transport properties of helical edge states in a QSHI-superconductor (QSHI-SC) junction formed by a In⁢As(15 nm)/Ga⁢Sb(5 nm) double quantum well and a superconducting tantalum (Ta) constriction. We observe a robust conductance plateau up to 2 T, signaling resilient edge-state transport. Using a modified Landauer-Büttiker analysis, we find that the zero-field conductance is consistent with 98% Andreev-reflection probability owing to the high transparency of the (In⁢As/Ga⁢Sb)-Ta interface. Such resilience is consistent with the Dirac point for the edge states being buried in the bulk valence band. We further theoretically show that a buried Dirac point does not affect the robustness of the quasi-one-dimensional topological superconducting phase. We find that a buried Dirac point favors the hybridization of Majorana Kramers pairs (MKPs)—predicted to exist in a QSHI-SC constriction—and fermionic modes in the QSHI vacuum edge resulting in extended MKP states, highlighting the subtle role of buried Dirac points in probing MKPs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Multifunctional Polar 2D Lead Iodide Perovskites Exhibiting Persistent Spin Texture

Ferroelectric Rashba semiconductors are a rare class of multifunctional materials promising for spin–orbitronics due to the possibility of electrically switchable spin textures. Hybrid organic–inorganic metal halide perovskites offer exceptional tunability that can be harnessed to target noncentrosymmetry; however, the complex interactions between organic and inorganic components are not rationally understood. Here, we use an asymmetric spacer cation with a strong molecular dipole moment (2-fluorobenzylammonium, 2FBZ) and increase the intrinsic quantum well thickness to n > 1 to synthesize three new polar 2D lead iodide perovskites (2FBZ) 2 (A) n-1 Pb n I 3n+1 with A = methylammonium (MA) or formamidinium (FA) and n = 2, 3. Single-crystal structure analysis reveals the C 2v symmetry of these crystal structures and substantial structural distortions, which enable Rashba and Dresselhaus band splitting and persistent spin texture, confirmed by DFT calculations. Measurements of the resulting symmetry-dependent properties, such as second harmonic generation, switchable photovoltaic effect, ferroelectric polarization, and low temperature photoluminescence show switchable ferroelectric semiconducting properties. Furthermore, these results introduce a general chemical design strategy toward polar symmetry by exploiting the complex interplay between asymmetric spacer cations and A-site cations in quasi-2D (n > 1) halide perovskites to realize new classes of multifunctional materials for future spin–orbitronic applications.

Cations↗
DOE OSTI2025

Twisted Tin‐Chloride Perovskite Single‐Crystal Heterostructures

Self-assembly affords simpler synthetic routes to heterostructures compared with manual layer-by-layer stacking, yet controlling interlayer twist angles in a bulk solid remains an outstanding challenge. We report two new single-crystal heterostructures: (Sn 2 Cl 2 )(CYS) 2 SnCl 4 (CYS = + NH 3 (CH 2 ) 2 S – ; Sn_CYS) and (Sn 2 Cl 2 )(SeCYS) 2 SnCl 4 (SeCYS = + NH 3 (CH 2 ) 2 Se – ; Sn_SeCYS) synthesized in solution, with alternating perovskite and intergrowth layers. Notably, compared to the recently reported lead analog, (Pb 2 Cl 2 )(CYS) 2 PbCl 4 (Pb_CYS), the tin heterostructures feature a twist between the perovskite and intergrowth layers. We trace this twist to local distortions at the Sn centers, which change the interfacial lattice-matching requirements compared to those of the Pb analog. Electronic band structure calculations show that the striking differences in the relative energies of perovskite- and intergrowth-derived bands in Sn_CYS and Pb_CYS arise from structural and not compositional differences. The structural anisotropy of Sn_CYS is also reflected in a large in-plane photoluminescence linear anisotropy ratio. Interfacial strain further affords differential incorporation of Pb into the perovskite and intergrowth layers of the Sn heterostructures, resulting in redshifted optical absorption onsets. Thus, we posit that local structural distortions may be exploited to manipulate the twist angle and interfacial strain in bulk heterostructures, providing a new handle for tuning the band alignments of bulk quantum-well electronic structures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Coherent Random Lasing in Subwavelength Quasi‐2D Perovskites

Abstract Quasi‐2D lead halide perovskites have garnered increasing interest as lasing gain media. Relatively simple fabrication, high refractive index, and unique quantum well structure encourage their use in traditional cavity lasers and cavity‐free systems called random lasers (RLs). Despite tremendous advances reported thus far, coherent random lasing in quasi‐2D perovskite subwavelength films has not been reported. Consequently, coherent optical feedback mechanisms in quasi‐2D perovskite systems are still unexplored. Here, this work reports the observation of coherent random lasing in subwavelength quasi‐2D perovskite films. Statistical analysis of spectral measurements reveals Lévy‐like intensity fluctuations, replica symmetry breaking confirms random lasing, and the coherent modes are studied with spectral and spatial correlation techniques. The observed coherent lasing modes are found to be extended states that arise from the random crystal grain structure during fabrication and span the entire pump volume. These modes out‐compete diffusive lasing due to their coherence.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Epitaxial Regrowth and Hole Shape Engineering for Photonic Crystal Surface Emitting Lasers (PCSELs)

In the present research, epitaxial regrowth by molecular beam epitaxy (MBE) is investigated as a fabrication process for void-semiconductor photonic crystal (PhC) surface emitting lasers (PCSELs). The PhC is patterned by electron beam lithography (EBL) and inductively coupled plasma (ICP) etch and is subsequently regrown by molecular beam epitaxy to embed a series of voids in bulk semiconductor. Experiments are conducted to investigate the effects of regrowth on air-hole morphology. The resulting voids have a distinct teardrop shape with the radius and depth of the etched hole playing a very critical role in the final regrown void’s dimensions. We demonstrate that specific hole diameters can encourage deposition to the bottom of the voids or to their sidewalls, allowing us to engineer the shape of the void more precisely as is required by the PCSEL design. A 980 nm InGaAs quantum well laser structure is optimized for low threshold lasing at the design wavelength and full device structures are patterned and regrown. An optically pumped PCSEL is demonstrated from this process.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Tuning Hybrid exciton–Photon Fano Resonances in Two-Dimensional Organic–Inorganic Perovskite Thin Films

As easy-to-grow quantum wells with narrow excitonic features at room temperature, two-dimensional (2D) Ruddleson–Popper perovskites are promising for realizing novel nanophotonic devices based on exciton–photon interactions. Here, we demonstrate a distinct hybrid exciton–photon Fano resonance in (C 4 H 9 NH 3 ) 2 PbI 4 thin films prepared via spin coating. Using a classical coupled-oscillator model and finite-difference time-domain simulations, we link the Fano interference to the coupling of the exciton with the Rayleigh-like scattering of the film microstructure. Combining colloidal plasmonic cavities with the 2D perovskite films, we demonstrate tuning of the Fano resonance. In combination with silver nanoparticles, the exciton–photon Fano interference couples to the in-plane plasmonic modes with indications of Rabi splitting. By creating a nanoparticle on mirror geometry, we address the out-of-plane excitonic component, reaching an intermediate coupling regime. Furthermore, these structures suggest possible photonic targets for biomolecular self-assembly applications.

2D perovskites↗
DOE OSTI2020

Negatively Charged Excitons in CdSe Nanoplatelets

The low-temperature emission spectrum of CdSe colloidal nanoplatelets (NPLs) consists of two narrow lines. The high-energy line stems from the recombination of neutral excitons. The origin of the low-energy line is currently debated. Here, we experimentally study the spectral shift, emission dynamics, and spin polarization of both lines at low temperatures down to 1.5 K and in high magnetic fields up to 60 T and show that the low-energy line originates from the recombination of negatively charged excitons (trions). This assignment is confirmed by the NPL photocharging dynamics and associated variations in the spectrum. We show that the negatively charged excitons are considerably less sensitive to the presence of surface spins than the neutral excitons. The trion binding energy in three-monolayer-thick NPLs is as large as 30 meV, which is 4 times larger than its value in the two-dimensional limit of a conventional CdSe quantum well confined between semiconductor barriers. A considerable part of this enhancement is gained by the dielectric enhancement effect, which is due to the small dielectric constant of the environment surrounding the NPLs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Elucidating the Role of InGaAs and InAlAs Buffers on Carrier Dynamics of Tensile-Strained Ge Double Heterostructures

Extensive research efforts of strained germanium (Ge) are currently underway due to its unique properties, namely, (i) possibility of band gap and strain engineering to achieve a direct band gap, thus exhibiting superior radiative properties, and (ii) higher electron and hole mobilities than Si for upcoming technology nodes. Realizing lasing structures is vital to leveraging the benefits of tensile-strained Ge (ε-Ge). Here, we use a combination of different analytical tools to elucidate the effect of the underlying InGaAs/InAlAs and InGaAs overlaying heterostructures on the material quality and strain state of ε-Ge grown by molecular beam epitaxy. Using X-ray analysis, we show the constancy of tensile strain in sub-50 nm ε-Ge in a quantum-well (QW) heterostructure. Further, effective carrier lifetime using photoconductive decay as a function of buffer type exhibited a high (low) defect-limited carrier lifetime of ~68 ns (~13 ns) in 0.61% (0.66%) ε-Ge grown on an InGaAs (InAlAs) buffer. These results correspond well with the measured surface roughness of 1.289 nm (6.303 nm), consistent with the surface effect of the ε-Ge/III–V heterointerface. Furthermore, a reasonably high effective lifetime of ~78 ns is demonstrated in a QW of ~30 nm 1.6% ε-Ge, a moderate reduction from ~99 ns in uncapped ε-Ge, alluding to the surface effect of the overlying heterointerface. Thus, the above results highlight the prime quality of ε-Ge that can be achieved via III–V heteroepitaxy and paves a path for integrated Ge photonics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Structural Evolution of Layered Hybrid Lead Iodide Perovskites in Colloidal Dispersions

Controlling the structure of layered hybrid metal halide perovskites, such as the Ruddlesden-Popper (R-P) phases, is challenging because of their tendency to form mixtures of varying composition. Colloidal growth techniques, such as antisolvent precipitation, forms colloidal dispersions with properties that match bulk layered R-P phases, but controlling the composition of these particles remains challenging. Here, we explore the microstructure of particles of R-P phases of methylammonium lead iodide prepared by antisolvent precipitation from ternary mixtures of alkylammonium cations, where one cation can form perovskite phases (CH 3 NH 3 + ) and the other two promote layered structures as spacers (e.g. C 4 H 9 NH 3 + and C 12 H 25 NH 3 + ). We determine that alkylammonium spacers pack with constant methylene density in the R-P interlayer, and exclude interlayer solvent in dispersed colloids, regardless of length or branching. Using this result, we illustrate how the competition between cations that act as spacers between layers, or as grain- terminating ligands, determines the colloidal microstructure of layered R-P crystallites in solution. Optical measurements reveal that quantum well dimensions can be tuned by engineering the ternary cation composition. Transmission synchrotron wide-angle X-ray scattering and small angle neutron scattering reveal changes in the structure of colloids in solvent and after deposition into thin films. In particular, we find that spacers can alloy between R-P layers if they share common steric arrangements, but tend to segregate into polydisperse R-P phases if they do not mix. In conclusion, this study provides a framework to compare the microstructure of colloidal layered perovskites and suggests clear avenues to control phase and colloidal morphology.

14 SOLAR ENERGY↗
DOE OSTI2026

Gate-Tunable Single Terahertz Meta-Atom Ultrastrong Light-Matter Coupling

We study the electrical tunability of ultrastrong light-matter interactions between a single terahertz circuit-based complementary split ring resonator (cSRR) and a two-dimensional electron gas. For this purpose, transmission spectroscopy measurements are performed under the influence of a strong magnetic field at different set points for the electric gate bias. The resulting Landau polariton dispersion depends on the applied electric bias, as the gating technique confines the electrons in-plane down to extremely subwavelength dimensions as small as d = 410 nm. This confinement allows for the excitation of standing plasma waves at zero magnetic field and an effective tunability of the electron number coupled to the THz resonator. This allows the normalized coupling strength to be tuned in situ from η = 0.46 down to η = 0.18. This is the first demonstration of terahertz far-field spectroscopy of an electrically tunable interaction between a single terahertz resonator and electrons in a GaAs quantum well heterostructure.

Landau levels↗
DOE OSTI2026

Hydrogen-Bonded Organic Framework Enables Phase-Pure Layered Tin Perovskite Nanowires for Room-Temperature Lasing

Room-temperature lasing is a key milestone in the development of miniaturized optoelectronic and photonic devices. We present a simple approach to synthesize phase-pure quasi-2D layered tin perovskite nanowires with varying quantum well thicknesses (n = 1 to 4). By incorporating a new organic spacer capable of forming a hydrogen-bonded organic framework, this method promoted anisotropic crystal growth and enhanced lattice rigidity. Furthermore, introducing molecular intercalants enabled controlled crystallization into well-defined nanowires that function as Fabry−Pérot cavities. Cavities made from n = 2 to 4 perovskites support efficient and robust nearinfrared, room-temperature optically pumped lasing with the threshold as low as 75.8 μJ/cm 2 , cavity quality factor over 3000, and negligible degradation over 106 pulses. A cleaved coupled nanolaser was fabricated as a proof-of-concept device for photonic applications.

Cavities↗
DOE OSTI2020

Heterobilayers of 2D materials as a platform for excitonic superfluidity

Excitonic condensate has been long-sought within bulk indirect-gap semiconductors, quantum wells, and 2D material layers, all tried as carrying media. Here, we propose intrinsically stable 2D semiconductor heterostructures with doubly-indirect overlapping bands as optimal platforms for excitonic condensation. After screening hundreds of 2D materials, we identify candidates where spontaneous excitonic condensation mediated by purely electronic interaction should occur, and hetero-pairs Sb 2 Te 2 Se/BiTeCl, Hf 2 N 2 I 2 /Zr 2 N 2 Cl 2 , and LiAlTe 2 /BiTeI emerge promising. Unlike monolayers, where excitonic condensation is hampered by Peierls instability, or other bilayers, where doping by applied voltage is required, rendering them essentially non-equilibrium systems, the chemically-specific heterostructures predicted here are lattice-matched, show no detrimental electronic instability, and display broken type-III gap, thus offering optimal carrier density without any gate voltages, in true-equilibrium. Predicted materials can be used to access different parts of electron-hole phase diagram, including BEC-BCS crossover, enabling tantalizing applications in superfluid transport, Josephson-like tunneling, and dissipationless charge counterflow.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Reversible multicolor chromism in layered formamidinium metal halide perovskites

Abstract Metal halide perovskites feature crystalline-like electronic band structures and liquid-like physical properties. The crystal–liquid duality enables optoelectronic devices with unprecedented performance and a unique opportunity to chemically manipulate the structure with low energy input. In this work, we leverage the low formation energy of metal halide perovskites to demonstrate multicolor reversible chromism. We synthesized layered Ruddlesden-Popper FA n+1 Pb n X 3n+1 (FA = formamidinium, X = I, Br; n = number of layers = 1, 2, 3 … ∞) and reversibly tune the dimensionality ( n ) by modulating the strength and number of H-bonds in the system. H-bonding was controlled by exposure to solvent vapor (solvatochromism) or temperature change (thermochromism), which shuttles FAX salt pairs between the FA n+1 Pb n X 3n+1 domains and adjacent FAX “reservoir” domains. Unlike traditional chromic materials that only offer a single-color transition, FA n+1 Pb n X 3n+1 films reversibly switch between multiple colors including yellow, orange, red, brown, and white/colorless. Each colored phase exhibits distinct optoelectronic properties characteristic of 2D superlattice materials with tunable quantum well thickness.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Gate-tunable superconducting diode effect in a three-terminal Josephson device

Abstract The phenomenon of non-reciprocal critical current in a Josephson device, termed the Josephson diode effect, has garnered much recent interest. Realization of the diode effect requires inversion symmetry breaking, typically obtained by spin-orbit interactions. Here we report observation of the Josephson diode effect in a three-terminal Josephson device based upon an InAs quantum well two-dimensional electron gas proximitized by an epitaxial aluminum superconducting layer. We demonstrate that the diode efficiency in our devices can be tuned by a small out-of-plane magnetic field or by electrostatic gating. We show that the Josephson diode effect in these devices is a consequence of the artificial realization of a current-phase relation that contains higher harmonics. We also show nonlinear DC intermodulation and simultaneous two-signal rectification, enabled by the multi-terminal nature of the devices. Furthermore, we show that the diode effect is an inherent property of multi-terminal Josephson devices, establishing an immediately scalable approach by which potential applications of the Josephson diode effect can be realized, agnostic to the underlying material platform. These Josephson devices may also serve as gate-tunable building blocks in designing topologically protected qubits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Halide perovskites enable polaritonic XY spin Hamiltonian at room temperature

Exciton polaritons, the part-light and part-matter quasiparticles in semiconductor optical cavities, are promising for exploring Bose–Einstein condensation, non-equilibrium many-body physics and analogue simulation at elevated temperatures. However, a room-temperature polaritonic platform on par with the GaAs quantum wells grown by molecular beam epitaxy at low temperatures remains elusive. Here, the operation of such a platform calls for long-lifetime, strongly interacting excitons in a stringent material system with large yet nanoscale-thin geometry and homogeneous properties. Here, we address this challenge by adopting a method based on the solution synthesis of excitonic halide perovskites grown under nanoconfinement. Such nanoconfinement growth facilitates the synthesis of smooth and homogeneous single-crystalline large crystals enabling the demonstration of XY Hamiltonian lattices with sizes up to 10 × 10. With this demonstration, we further establish perovskites as a promising platform for room temperature polaritonic physics and pave the way for the realization of robust mode-disorder-free polaritonic devices at room temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Turnkey locking of quantum-dot lasers directly grown on Si

Ultralow-noise laser sources are crucial for a variety of applications, including microwave synthesizers, optical gyroscopes and the manipulation of quantum systems. Silicon photonics has emerged as a promising solution for high-coherence applications due to its ability to reduce the system size, weight, power consumption and cost. Semiconductor lasers based on self-injection locking have achieved fibre laser coherence, but typically require a high-quality-factor external cavity to suppress coherence collapse through frequency-selective feedback. Lasers based on external-cavity locking are a low-cost and turnkey operation option, but their coherence is generally inferior to self-injection locking lasers. In this work, we demonstrate quantum-dot lasers grown directly on Si that achieve self-injection-locking laser coherence under turnkey external-cavity locking. The high-performance quantum-dot laser offers a scalable and low-cost heteroepitaxial integration platform. Moreover, the chaos-free nature of the quantum-dot laser enables a 16 Hz Lorentzian linewidth under external-cavity locking using a low-quality-factor external cavity, and improves the frequency noise by an additional order of magnitude compared with conventional quantum-well lasers.

Dong, Bozhang↗