Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “profiling”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Observed damage during Argon gas cluster depth profiles of compound semiconductors

Argon Gas Cluster Ion Beam (GCIB) sources have become very popular in XPS and SIMS in recent years, due to the minimal chemical damage they introduce in the depth-profiling of polymer and other organic materials. These GCIB sources are therefore particularly useful for depth-profiling polymer and organic materials, but also (though more slowly) the surfaces of inorganic materials such as semiconductors, due to the lower roughness expected in cluster ion sputtering compared to that introduced by monatomic ions. We have examined experimentally a set of five compound semiconductors, cadmium telluride (CdTe), gallium arsenide (GaAs), gallium phosphide (GaP), indium arsenide (InAs), and zinc selenide (ZnSe) and a high-κ dielectric material, hafnium oxide (HfO), in their response to argon cluster profiling. An experimentally determined HfO etch rate of 0.025 nm/min (3.95 × 10{sup −2} amu/atom in ion) for 6 keV Ar gas clusters is used in the depth scale conversion for the profiles of the semiconductor materials. The assumption has been that, since the damage introduced into polymer materials is low, even though sputter yields are high, then there is little likelihood of damaging inorganic materials at all with cluster ions. This seems true in most cases; however, in this work, we report for the first time that this damage can in fact be very significant in the case of InAs, causing the formation of metallic indium that is readily visible even to the naked eye.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction

Here, we demonstrate X-ray fitting through kinematical simulations of the intensity profiles of symmetric reflections for epitaxial compositionally graded layers of AlGaN grown by molecular beam epitaxy pseudomorphically on [0001]-oriented GaN substrates. These detailed simulations depict obvious differences between changes in thickness, maximum concentration, and concentration profile of the graded layers. Through comparison of these simulations with as-grown samples, we can reliably determine these parameters, most important of which are the profiles of the concentration and strain which determine much of the electrical properties of the film. In addition to learning about these parameters for the characterization of thin film properties, these fitting techniques create opportunities to calibrate growth rates and control composition profiles of AlGaN layers with a single growth rather than multiple growths as has been done traditionally.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Investigation of Compton profiles of molecular methane and ethane

The Compton profiles of methane and ethane molecules have been determined at an incident photon energy of 20 keV based on the third generation synchrotron radiation, and the statistical accuracy of 0.2% is achieved near p{sub z} = 0. The density functional theory with aug-cc-pVTZ basis set was used to calculate the Compton profiles of methane and ethane. The present experimental Compton profiles are in better agreement with the theoretical calculations in the whole p{sub z} region than the previous experimental results, which indicates that the present experimental Compton profiles are accurate enough to serve as the benchmark data for methane and ethane molecules.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Profile measurements in the plasma edge of mega amp spherical tokamak using a ball pen probe

The ball pen probe (BPP) technique is used successfully to make profile measurements of plasma potential, electron temperature, and radial electric field on the Mega Amp Spherical Tokamak. The potential profile measured by the BPP is shown to significantly differ from the floating potential both in polarity and profile shape. By combining the BPP potential and the floating potential, the electron temperature can be measured, which is compared with the Thomson scattering (TS) diagnostic. Excellent agreement between the two diagnostics is obtained when secondary electron emission is accounted for in the floating potential. From the BPP profile, an estimate of the radial electric field is extracted which is shown to be of the order ∼1 kV/m and increases with plasma current. Corrections to the BPP measurement, constrained by the TS comparison, introduce uncertainty into the E{sub R} measurements. The uncertainty is most significant in the electric field well inside the separatrix. The electric field is used to estimate toroidal and poloidal rotation velocities from E × B motion. This paper further demonstrates the ability of the ball pen probe to make valuable and important measurements in the boundary plasma of a tokamak.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Bootstrap performance profiles in stochastic algorithms assessment

Optimization with stochastic algorithms has become a relevant research field. Due to its stochastic nature, its assessment is not straightforward and involves integrating accuracy and precision. Performance profiles for the mean do not show the trade-off between accuracy and precision, and parametric stochastic profiles require strong distributional assumptions and are limited to the mean performance for a large number of runs. In this work, bootstrap performance profiles are used to compare stochastic algorithms for different statistics. This technique allows the estimation of the sampling distribution of almost any statistic even with small samples. Multiple comparison profiles are presented for more than two algorithms. The advantages and drawbacks of each assessment methodology are discussed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Experimental investigation on plasma parameter profiles on a wafer level with reactor gap lengths in an inductively coupled plasma

The gap length effect on plasma parameters is investigated in a planar type inductively coupled plasma at various conditions. The spatial profiles of ion densities and the electron temperatures on the wafer level are measured with a 2D probe array based on the floating harmonic method. At low pressures, the spatial profiles of the plasma parameters rarely changed by various gap lengths, which indicates that nonlocal kinetics are dominant at low pressures. However, at relatively high pressures, the spatial profiles of the plasma parameter changed dramatically. These plasma distribution profile characteristics should be considered for plasma reactor design and processing setup, and can be explained by the diffusion of charged particles and the local kinetics.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2015

Two-dimensional profile measurement of plasma parameters in radio frequency-driven argon atmospheric pressure plasma jet

The two-dimensional profiles of the electron density, electron temperature, neutral translational temperature, and molecular rotational temperature are investigated in an argon atmospheric pressure plasma jet, which is driven by the radio frequency of 13.56 MHz by means of the laser scattering methods of Thomson, Rayleigh, and Raman. All measured parameters have maximum values at the center of the discharge and decrease toward the plasma edge. The results for the electron temperature profile are contrary to the results for the microwave-driven plasma. From our experimental results, the profiles of the plasma parameters arise from the radial contraction of plasmas and the time averaged profile of the electric field, which is obtained by a microwave simulation performed under identical conditions to the plasma jet. In the case of the neutral temperature, a higher translational temperature than the rotational temperature is measured, and its discrepancy is tentatively explained in terms of the low ion-neutral charge exchange rate and the additional degrees of freedom of the molecules. The description of our experimental results and the underlying physics are addressed in detail.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2016

Measurement of heat load density profile on acceleration grid in MeV-class negative ion accelerator

To understand the physics of the negative ion extraction/acceleration, the heat load density profile on the acceleration grid has been firstly measured in the ITER prototype accelerator where the negative ions are accelerated to 1 MeV with five acceleration stages. In order to clarify the profile, the peripheries around the apertures on the acceleration grid were separated into thermally insulated 34 blocks with thermocouples. The spatial resolution is as low as 3 mm and small enough to measure the tail of the beam profile with a beam diameter of ∼16 mm. It was found that there were two peaks of heat load density around the aperture. These two peaks were also clarified to be caused by the intercepted negative ions and secondary electrons from detailed investigation by changing the beam optics and gas density profile. This is the first experimental result, which is useful to understand the trajectories of these particles.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Admittance–voltage profiling of Al{sub x}Ga{sub 1−x}N/GaN heterostructures: Frequency dependence of capacitance and conductance

Admittance–voltage profiling of Al{sub x}Ga{sub 1−x}N/GaN heterostructures was used to determine the frequency dependent capacitance and conductance of FET devices in the frequency range from 50 Hz to 1 MHz. The nominally undoped low pressure metal-organic vapor-phase epitaxy structures were grown with an Al-content of 30%. An additional 1 nm thick AlN interlayer was placed in one structure before the Al{sub 0.3}Ga{sub 0.7}N layer growth. For frequencies below 10{sup 8} Hz it is convenient to use equivalent circuits to represent electric or dielectric properties of a material, a method widely used, for example, in impedance spectroscopy. We want to emphasize the relation between frequency dependent admittance–voltage profiling and the corresponding equivalent circuits to the complex dielectric function. Debye and Drude models are used for the description of the frequency dependent admittance profiles in a range of depletion onset of the two-dimensional electron gas. Capacitance- and conductance-frequency profiles are fitted in the entire measured range by combining both models. Based on our results, we see contributions to the two-dimensional electron gas for our samples from surface states (80%) as well as from background doping in the Al{sub 0.3}Ga{sub 0.7}N barriers (20%). The specific resistance of the layers below the gate is above 10{sup 5} Ω cm for both samples and increases with increasing negative bias, i.e., the layers below the gate are essentially depleted. We propose that the resistance due to free charge carriers, determined by the Drude model, is located between gate and drain and, because of the AlN interlayer, the resistance is lowered by a factor of about 30 if compared to the sample without an AlN layer.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Time evolution of negative ion profile in a large cesiated negative ion source applicable to fusion reactors

To understand the physics of the cesium (Cs) recycling in the large Cs-seeded negative ion sources relevant to ITER and JT-60SA with ion extraction area of 45-60 cm × 110-120 cm, the time evolution of the negative ion profile was precisely measured in JT-60SA where the ion extraction area is longitudinally segmented into 5. The Cs was seeded from the oven at 180 °C to the ion source. After 1 g of Cs input, surface production of the negative ions appeared only in the central segment where a Cs nozzle was located. Up to 2 g of Cs, the negative ion profile was longitudinally expanded over full ion extraction area. The measured time evolution of the negative ion profile has the similar tendency of distribution of the Cs atoms that is calculated. From the results, it is suggested that Cs atom distribution is correlated with the formation of the negative ion profile.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Implementation of the new multichannel X-mode edge density profile reflectometer for the ICRF antenna on ASDEX Upgrade

A new multichannel frequency modulated continuous-wave reflectometry diagnostic has been successfully installed and commissioned on ASDEX Upgrade to measure the plasma edge electron density profile evolution in front of the Ion Cyclotron Range of Frequencies (ICRF) antenna. The design of the new three-strap ICRF antenna integrates ten pairs (sending and receiving) of microwave reflectometry antennas. The multichannel reflectometer can use three of these to measure the edge electron density profiles up to 2 × 10{sup 19} m{sup −3}, at different poloidal locations, allowing the direct study of the local plasma layers in front of the ICRF antenna. ICRF power coupling, operational effects, and poloidal variations of the plasma density profile can be consistently studied for the first time. In this work the diagnostic hardware architecture is described and the obtained density profile measurements were used to track outer radial plasma position and plasma shape.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2017

Theory and discretization of ideal magnetohydrodynamic equilibria with fractal pressure profiles

In three-dimensional ideal magnetohydrodynamics, closed flux surfaces cannot maintain both rational rotational-transform and pressure gradients, as these features together produce unphysical, infinite currents. A proposed set of equilibria nullifies these currents by flattening the pressure on sufficiently wide intervals around each rational surface. Such rational surfaces exist at every scale, which characterizes the pressure profile as self-similar and thus fractal. The pressure profile is approximated numerically by considering a finite number of rational regions and analyzed mathematically by classifying the irrational numbers that support gradients into subsets. As a result, applying these results to a given rotational-transform profile in cylindrical geometry, we find magnetic field and current density profiles compatible with the fractal pressure.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2017

Novel analysis technique for measuring edge density fluctuation profiles with reflectometry in the Large Helical Device

A new method for measuring density fluctuation profiles near the edge of plasmas in the Large Helical Device (LHD) has been developed utilizing reflectometry combined with pellet-induced fast density scans. Reflectometer cutoff location was calculated by proportionally scaling the cutoff location calculated with fast far infrared laser interferometer (FIR) density profiles to match the slower time resolution results of the ray-tracing code LHD-GAUSS. Plasma velocity profile peaks generated with this reflectometer mapping were checked against velocity measurements made with charge exchange spectroscopy (CXS) and were found to agree within experimental uncertainty once diagnostic differences were accounted for. Measured density fluctuation profiles were found to peak strongly near the edge of the plasma, as is the case in most tokamaks. These measurements can be used in the future to inform inversion methods of phase contrast imaging (PCI) measurements. This result was confirmed with both a fixed frequency reflectometer and calibrated data from a multi-frequency comb reflectometer, and this method was applied successfully to a series of discharges. The full width at half maximum of the turbulence layer near the edge of the plasma was found to be only 1.5–3 cm on a series of LHD discharges, less than 5% of the normalized minor radius.

47 OTHER INSTRUMENTATION↗
DOE OSTI2018

Bandgap profiling in CIGS solar cells via valence electron energy-loss spectroscopy

A robust, reproducible method for the extraction of relative bandgap trends from scanning transmission electron microscopy (STEM) based electron energy-loss spectroscopy (EELS) is described. The effectiveness of the approach is demonstrated by profiling the bandgap through a CuIn 1-x Ga x Se 2 solar cell that possesses intentional Ga/(In + Ga) composition variation. The EELS-determined bandgap profile is compared to the nominal profile calculated from compositional data collected via STEM-based energy dispersive X-ray spectroscopy. The EELS based profile is found to closely track the calculated bandgap trends, with only a small, fixed offset difference. This approach, which is particularly advantageous for relatively narrow bandgap materials and/or STEM systems with modest resolution capabilities (i.e., >100 meV), compromises absolute accuracy to provide a straightforward route for the correlation of local electronic structure trends with nanoscale chemical and physical structure/microstructure within semiconductor materials and devices.

14 SOLAR ENERGY↗
DOE OSTI2024

MHD stability of spherical tokamak equilibria with non-monotonic q-profiles

We use the 3D magnetohydrodynamic (MHD) code M3D-C1 [Jardin et al., Comput. Sci. Discovery 5, 014002 (2012)] to examine the MHD stability and subsequent evolution of NSTX shot 129169. This discharge had a period with a non-monotonic safety factor profile, q (reversed shear), which was terminated by a MHD event that abruptly lowered the central safety factor, q0, and greatly reduced the peakedness of the pressure profile. We show that the equilibrium just before the MHD event occurred was linearly unstable to many pressure-driven infernal modes. Modes with toroidal mode number n≥3 all had rational surfaces very close to the minimum value of q. However, a non-resonant pressure-driven (1, 1) mode was also present, and this dominated the nonlinear evolution. The final state in the simulation, after the MHD activity subsided, had a reduced and flattened pressure profile and a nearly monotonic q-profile, in qualitative agreement with experimental results. The initial state was also unstable to the resistive interchange criteria in the reversed-shear region, but the final state was stable everywhere. The “double tearing mode” (DTM) does not appear to play a role in the MHD activity of this discharge. In Appendix A, we show that in a torus, the DTM is strongly stabilized by pressure, but it is destabilized in cylindrical geometry (which has been the most extensively analyzed in the literature).

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2025

Inelastic deformation of diamond single crystals shock compressed to multimegabar stresses: Wave profile calculations

As the archetypal strong solid, the response of diamond shock compressed to multimegabar stresses is important for fundamental science and for numerical simulations of wave profiles for applications in high energy density physics experiments. Previous experiments and analysis have shown that the commonly used hydrodynamic assumption is invalid for diamond shock compressed to stresses below melt and an elastic–inelastic description is needed. Here, we present a phenomenological material model for calculating wave profiles in shock compressed diamond single crystals that incorporates this description. Also, to support the modeling effort, we carried out wave profile measurements on shock compressed diamond single crystals at the Sandia Z facility to augment previous measurements. Wave profiles for [100] and [111] diamond calculated using the material model provide a good match to the elastic–inelastic response (observed two-wave structure) measured at ∼325 and ∼360 GPa. Furthermore, the calculated peak stresses for single (overdriven) waves provide a good match to the measured Hugoniot states for stresses reaching ∼700 GPa, which is near melting conditions. The present results show that the diamond single crystal response at multimegabar shock stresses is characteristic of a brittle solid—pressure-dependent strength and strength loss due to inelastic deformation.

Deformation↗
DOE OSTI2014

The masses of local group dwarf spheroidal galaxies: The death of the universal mass profile

We investigate the claim that all dwarf spheroidal galaxies (dSphs) reside within halos that share a common, universal mass profile as has been derived for dSphs of the galaxy. By folding in kinematic information for 25 Andromeda dSphs, more than doubling the previous sample size, we find that a singular mass profile cannot be found to fit all of the observations well. Further, the best-fit dark matter density profile measured solely for the Milky Way dSphs is marginally discrepant with that of the Andromeda dSphs (at just beyond the 1σ level), where a profile with lower maximum circular velocity, and hence mass, is preferred. The agreement is significantly better when three extreme Andromeda outliers, And XIX, XXI, and XXV, all of which have large half-light radii (≳ 600 pc) and low-velocity dispersions (σ {sub v} < 5 km s{sup –1}), are omitted from the sample. We argue that the unusual properties of these outliers are likely caused by tidal interactions with the host galaxy.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2014

Hydrodynamic simulation of non-thermal pressure profiles of galaxy clusters

Cosmological constraints from X-ray and microwave observations of galaxy clusters are subjected to systematic uncertainties. Non-thermal pressure support due to internal gas motions in galaxy clusters is one of the major sources of astrophysical uncertainties. Using a mass-limited sample of galaxy clusters from a high-resolution hydrodynamical cosmological simulation, we characterize the non-thermal pressure fraction profile and study its dependence on redshift, mass, and mass accretion rate. We find that the non-thermal pressure fraction profile is universal across redshift when galaxy cluster radii are defined with respect to the mean matter density of the universe instead of the commonly used critical density. We also find that the non-thermal pressure is predominantly radial, and the gas velocity anisotropy profile exhibits strong universality when galaxy cluster radii are defined with respect to the mean matter density of the universe. However, we find that the non-thermal pressure fraction is strongly dependent on the mass accretion rate of the galaxy cluster. We provide fitting formulae for the universal non-thermal pressure fraction and velocity anisotropy profiles of gas in galaxy clusters, which should be useful in modeling astrophysical uncertainties pertinent to using galaxy clusters as cosmological probes.

79 ASTRONOMY AND ASTROPHYSICS↗