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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Synthesis of La{sup 3+} doped nanocrystalline ceria powder by urea-formaldehyde gel combustion route

Highlights: Black-Right-Pointing-Pointer Nano LC synthesized by gel combustion, using urea-formaldehyde fuel for first time. Black-Right-Pointing-Pointer Largely single crystals were produced in average range of 20-30 nm. Black-Right-Pointing-Pointer La{sup 3+} doping increases cell dimension linearly. Black-Right-Pointing-Pointer La{sup 3+} doping introduces ionic point defects but does not change electronic band gap. Black-Right-Pointing-Pointer Presence of Ce{sup 3+} indicates that this synthesis route produces reactive powders. -- Abstract: Nanocrystalline ceria powders doped with various concentrations of lanthanum oxide have been prepared following gel combustion route using for the first time urea-formaldehyde as fuel. The synthesized products were characterized by XRD, FESEM, TEM, PL and UV-vis spectroscopy. Peak positions of XRD were refined and the lattice parameters were obtained by applying Cohen's method. Unit cell parameter increases with concentration of La{sup 3+} ion and the variation is consistently linear. XRD calculations showed the dependence of crystallite size on dopant concentrations at lower level. TEM observation revealed unagglomerated particles to be single crystals in the average range of 20-30 nm. Band gap of the La{sup 3+} doped ceria materials does not change with doping. Spectroscopic experiments proved the existence of Ce{sup 3+} in the formed powder.

36 MATERIALS SCIENCE↗
DOE OSTI2012

Damage evolution of yttria-stabilized zirconia induced by He irradiation

The study presents an investigation of damage evolution of yttria-stabilized zirconia (YSZ) induced by irradiation of 100 keV He ions at room temperature as a function of fluence. Transmission electron microscopy (TEM), X-ray diffraction (XRD) and atomic force microscopy (AFM) were used in order to study the nature and evolution of structural damage at different levels. Our study shows that various kinds of defects are formed with the increasing fluence. Firstly, at low fluences, from 1 1016 to 4 1016 cm 2, of which maximum values of displacement per atom (dpa) range from 0.29 to 1.17, an elastic strain which is attributed to the accumulation of irradiation-induced discrete point defects, is presented. Secondly, in the intermediate fluences ranging from 8 1016 to 1 1017 cm 2 with corresponding dpa varying from 2.33 to 2.91, a large drop of elastic strain occurs accompanied by presence of an intensive damage region, which is comprised by large and interacted defect clusters. Thirdly, at the two high fluences of 2 1017 and 4 1017 cm 2, of which dpa are 5.83 and 11.65 respectively, a great amount of ribbon-like He bubbles with granular structure and cracks are presented at the depth of maximum concentration of deposited He atoms. The structural damage evolution and the mechanism of formation of He bubbles are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effect of the order of He{sup +} and H{sup +} ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Hydrogen and helium co-implantation is nowadays used to efficiently transfer thin Si layers and fabricate silicon on insulator wafers for the microelectronic industry. The synergy between the two implants which is reflected through the dramatic reduction of the total fluence needed to fracture silicon has been reported to be strongly influenced by the implantation order. Contradictory conclusions on the mechanisms involved in the formation and thermal evolution of defects and complexes have been drawn. In this work, we have experimentally studied in detail the characteristics of Si samples co-implanted with He and H, comparing the defects which are formed following each implantation and after annealing. We show that the second implant always ballistically destroys the stable defects and complexes formed after the first implant and that the redistribution of these point defects among new complexes drives the final difference observed in the samples after annealing. When H is implanted first, He precipitates in the form of nano-bubbles and agglomerates within H-related platelets and nano-cracks. When He is implanted first, the whole He fluence is ultimately used to pressurize H-related platelets which quickly evolve into micro-cracks and surface blisters. We provide detailed scenarios describing the atomic mechanisms involved during and after co-implantation and annealing which well-explain our results and the reasons for the apparent contradictions reported at the state of the art.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Electrometry by optical charge conversion of deep defects in 4H-SiC

Optically active point defects in various host materials, such as diamond and silicon carbide (SiC), have shown significant promise as local sensors of magnetic fields, electric fields, strain, and temperature. Modern sensing techniques take advantage of the relaxation and coherence times of the spin state within these defects. Here we show that the defect charge state can also be used to sense the environment, in particular high-frequency (megahertz to gigahertz) electric fields, complementing established spin-based techniques. This is enabled by optical charge conversion of the defects between their photoluminescent and dark charge states, with conversion rate dependent on the electric field (energy density). The technique provides an all-optical high-frequency electrometer which is tested in 4H-SiC for both ensembles of divacancies and silicon vacancies, from cryogenic to room temperature, and with a measured sensitivity of 41±8(V/cm) 2 /√Hz. In conclusion, due to the piezoelectric character of SiC, we obtain spatial 3D maps of surface acoustic wave modes in a mechanical resonator.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Optical tuning of the diamond Fermi level measured by correlated scanning probe microscopy and quantum defect spectroscopy

Quantum technologies based on quantum point defects in crystals require control over the defect charge state. Here we tune the charge state of shallow nitrogen-vacancy and silicon-vacancy centers by locally oxidizing a hydrogenated surface with moderate optical excitation and simultaneous spectral monitoring. The loss of conductivity and change in work function due to oxidation are measured in atmosphere using conductive atomic force microscopy and Kelvin probe force microscopy (KPFM). We correlate these scanning probe measurements with optical spectroscopy of the nitrogen-vacancy and silicon-vacancy centers created via implantation 15–25 nm beneath the diamond surface and annealing. The observed charge state of the defects as a function of optical exposure demonstrates that laser oxidation provides a way to precisely tune the Fermi level over a range of at least 2.00 eV. We also observe a significantly larger oxidation rate for implanted surfaces compared to unimplanted surfaces under ambient conditions. Here, combined with knowledge of the electron affinity of a surface, these results suggest KPFM is a powerful, high-spatial-resolution technique to advance surface Fermi level engineering for charge stabilization of quantum defects.

36 MATERIALS SCIENCE↗
DOE OSTI2017

A Theoretical Investigation into the Role of Surface Defects for Oxygen Evolution on RuO 2

Here, the inability of conventional theoretical models to corroborate the well-known experimental activity of RuO 2 for the oxygen evolution reaction (OER) has recently been the subject of numerous research efforts. In this study, we use density functional theory calculations to investigate the possibility that surface defects formed during dissolution are responsible for the OER activity of RuO 2 . It has been well-established experimentally that RuO 2 undergoes dissolution during OER, yet little is known about the atomic structure or catalytic reactivity of the resulting defect sites. Through simulation of point defects, steps, and kinks derived from the RuO 2 (110) surface, we discover a 0.7 eV range in the primary descriptor for OER activity, with the most active sites outperforming those at the ideal (110) surface by nearly 0.5 eV. We postulate that these variations in reactivity are due to differences in the local electronic structure, and we investigate in more detail the electronic structure of two singly coordinated sites at the same Ru atom located at a kink. Finally, we investigate possible dissolution pathways that may proceed at the RuO 2 surface under OER conditions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Temperature Dependence of Self-diffusion in Cr2O3 from First Principles

Understanding and predicting the dominant diffusion processes in Cr2O3 is essen- tial to its optimization for anti-corrosion coatings, spintronics, and other applications. Despite significant theoretical effort in modeling defect mediated diffusion in Cr2O3 the correlation with experimentally measured diffusivities remains poor partly due to the insufficient accuracy of the theoretical approaches. Here an attempt to resolve these discrepancies is made through high accuracy density functional theory simulations cou- pled with grand canonical formalism of defect thermochemistry. In this approach, point defect formation energies were computed using hybrid exchange correlation functional. This level of theory proved to be essential for achieving the agreement with experi- mental self-diffusion coefficients. The analysis of the resulting self-diffusion coefficients indicate that chromium has higher mobility at low temperatures and high oxygen partial pressures, in particular at standard temperature and pressure conditions. At high vacuum, high temperature conditions, oxygen diffusion becomes dominant. At Cr/Cr2O3 interfaces O vacancies were found to be more mobile than Cr vacancies at all temperatures. Cr diffuses preferentially along the c-axis at low temperatures but switches to basal plane at higher temperatures. O diffusion is primarily bound to basal plane at all temperatures.

Medasani, Bharat K.↗
DOE OSTI2019

A mechanism of defect-enhanced phase transformation kinetics in lithium iron phosphate olivine

Abstract Antisite defects are a type of point defect ubiquitously present in intercalation compounds for energy storage applications. While they are often considered a deleterious feature, here we elucidate a mechanism of antisite defects enhancing lithium intercalation kinetics in LiFePO 4 by accelerating the FePO 4 → LiFePO 4 phase transformation. Although Fe Li antisites block Li movement along the [010] migration channels in LiFePO 4 , phase-field modeling reveals that their ability to enhance Li diffusion in other directions significantly increases the active surface area for Li intercalation in the surface-reaction-limited kinetic regime, which results in order-of-magnitude improvement in the phase transformation rate compared to defect-free particles. Antisite defects also promote a more uniform reaction flux on (010) surface and prevent the formation of current hotspots under galvanostatic (dis)charging conditions. We analyze the scaling relation between the phase boundary speed, Li diffusivity and particle dimensions and derive the criteria for the co-optimization of defect content and particle geometry. A surprising prediction is that (100)-oriented LiFePO 4 plates could potentially deliver better performance than (010)-oriented plates when the Li intercalation process is surface-reaction-limited. Our work suggests tailoring antisite defects as a general strategy to improve the rate performance of phase-changing battery compounds with strong diffusion anisotropy.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Experimental and theoretical studies of native deep-level defects in transition metal dichalcogenides

Abstract Transition metal dichalcogenides (TMDs), especially in two-dimensional (2D) form, exhibit many properties desirable for device applications. However, device performance can be hindered by the presence of defects. Here, we combine state of the art experimental and computational approaches to determine formation energies and charge transition levels of defects in bulk and 2D MX 2 (M = Mo or W; X = S, Se, or Te). We perform deep level transient spectroscopy (DLTS) measurements of bulk TMDs. Simultaneously, we calculate formation energies and defect levels of all native point defects, which enable identification of levels observed in DLTS and extend our calculations to vacancies in 2D TMDs, for which DLTS is challenging. We find that reduction of dimensionality of TMDs to 2D has a significant impact on defect properties. This finding may explain differences in optical properties of 2D TMDs synthesized with different methods and lays foundation for future developments of more efficient TMD-based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Impact of proton irradiation on conductivity and deep level defects in β-Ga 2 O 3

Single crystalline bulk and epitaxially grown gallium oxide (β–Ga 2 O 3 ) was irradiated by 0.6 and 1.9 MeV protons to doses ranging from 5 × 10 9 to 6 × 10 14 cm -2 in order to study the impact on charge carrier concentration and electrically active defects. Samples irradiated to doses at or above 2 × 10 13 cm -2 showed a complete removal of free charge carriers in their as-irradiated state, whereas little or no influence was observed below doses of 6 × 10 12 cm -2 . From measurements at elevated temperatures, a thermally activated recovery process is seen for the charge carriers, where the activation energy for recovery follow a second-order kinetics with an activation energy of ~1.2 eV. Combining the experimental results with hybrid functional calculations, we propose that the charge carrier removal can be explained by Fermi-level pinning far from the conduction band minimum (CBM) due to gallium interstitials (Ga i ), vacancies (V Ga ), and antisites (Ga O ), while migration and subsequent passivation of V Ga via hydrogen-derived or V O defects may be responsible for the recovery. Following the recovery, deep level transient spectroscopy (DLTS) reveals generation of two deep levels, with energy positions around 0.75 and 1.4 eV below the CBM. Of these two levels, the latter is observed to disappear after the initial DLTS measurements, while the concentration of the former increases. Here, we discuss candidate possibilities and suggest that the origins of these levels are more likely due to a defect complex than an isolated point defect.

36 MATERIALS SCIENCE↗
NASA NTRS2004

Quantification Of 4H- To 3C-Polymorphism In Silicon Carbide (SiC) Epilayers And An Investigation Of Recombination-Enhanced Dislocation Motion In SiC By Optical Emission Microscopy (Oem) Techniques

Environments that impose operational constraints on conventional silicon-(Si) based semiconductor devices frequently appear in military- and space-grade applications. These constraints include high temperature, high power, and high radiation environments. Silicon carbide (SiC), an alternative type of semiconductor material, has received abundant research attention in the past few years, owing to its radiation-hardened properties as well as its capability to withstand high temperatures and power levels. However, the growth and manufacture of SiC devices is still comparatively immature, and there are severe limitations in present crystal growth and device fabrication processes. Among these limitations is a variety of crystal imperfections known as defects. These imperfections can be point defects (e.g., vacancies and interstitials), line defects (e.g., edge and screw dislocations), or planar defects (e.g., stacking faults and double-positioning boundaries). All of these defects have been experimentally shown to be detrimental to the performance of electron devices made from SiC. As such, it is imperative that these defects are significantly reduced in order for SiC devices to become a viable entity in the electronics world. The NASA Glenn High Temperature Integrated Electronics & Sensors Team (HTIES) is working to identify and eliminate these defects in SiC by implementing improved epitaxial crystal growth procedures. HTIES takes two-inch SiC wafers and etches patterns, producing thousands of mesas into each wafer. Crystal growth is then carried out on top of these mesas in an effort to produce films of improved quality-resulting in electron devices that demonstrate superior performance-as well as fabrication processes that are cost-effective, reliable, and reproducible. In this work, further steps are taken to automate HTIES' SiC wafer inspection system. National Instruments LabVIEW image processing and pattern recognition routines are developed that are capable of quantifying and mapping defects on both the substrate and mesa surfaces, and of quantifying polymorphic changes in the grown materials. In addition, an optical emission microscopy (OEM) system is developed that will facilitate comprehensive study of recombination-enhanced dislocation motion (REDM).

Speer, Kevin M.↗
DOE OSTI2014

Impact of strain on electronic defects in (Mg,Zn)O thin films

We have investigated the impact of strain on the incorporation and the properties of extended and point defects in (Mg,Zn)O thin films by means of photoluminescence, X-ray diffraction, deep-level transient spectroscopy (DLTS), and deep-level optical spectroscopy. The recombination line Y₂, previously detected in ZnO thin films grown on an Al-doped ZnO buffer layer and attributed to tensile strain, was exclusively found in (Mg,Zn)O samples being under tensile strain and is absent in relaxed or compressively strained thin films. Furthermore a structural defect E3´ can be detected via DLTS measurements and is only incorporated in tensile strained samples. Finally it is shown that the omnipresent deep-level E3 in ZnO can only be optically recharged in relaxed ZnO samples.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Comparative study of defect levels in GaInNAs, GaNAsSb, and GaInNAsSb for high-efficiency solar cells

Background doping and defect levels in GaInNAs, GaNAsSb, and GaInNAsSb solar cells with 1 eV band-gap are reported. Localized point defect induced traps were observed showing broadest defect distribution in GaInNAsSb. Incorporation of Sb reduced the unintentional p-type background doping by an order of magnitude, but increased the capture cross sections of deep levels by three orders of magnitude. The thermal activation energy of the dominating hole trap was increased from 350 meV for GaInNAs to 560 meV for GaNAsSb. Annealing of GaNAsSb solar cells improved the open circuit voltage from 280 mV to 415 mV, owing to the reduction in trap density.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

First principles investigation of dopants and defect complexes in CdSe$_x$Te$_{1-x}$

Se alloying is a common approach to improve the performance of CdTe solar cells by tuning the bandgap, defect levels, and carrier density. A fundamental understanding of these improvements, specifically the effect of Se alloying on the behavior of defects and dopants in CdTe, remains unclear. Here, in this work, we present a density functional theory (DFT) study of point defect energetics in CdTe and CdSe x Te 1-x with x = 0.25, leading to a comparison of how native defects, dopants (As and Cu), impurities (Cl and O), and related defect complexes behave in CdTe vs CdSe x Te 1-x . Our calculations, performed by combining semi-local and nonlocal hybrid functionals, show a general lowering of the formation energies of native defects as well as substitutional defects formed by As and Cl upon Se addition. For successful p-type doping with As, destabilizing Cl-based defects in the CdSeTe lattice would be essential. We find evidence for some low-energy defect complexes of As, Cl, and O in CdSe 0.25 Te 0.75 . The computed defect formation energies further enable estimates of temperature-dependent defect concentrations and self-consistent Fermi levels. A comparison of defect energetics with the energies of impurity phases reveals that As, Cu, Cl, and O overwhelmingly prefer being segregated to unwanted As 2 O 5 , AsCl 3 , Cd 2 AsCl 2 , and CuO x phases rather than remain at defect sites, but such segregation is less likely to happen in CdSe 0.25 Te 0.75 than in CdTe. Overall, our work presents a list of likely defects and complexes in CdTe and Se-incorporated CdTe, paving the way to explain and mitigate limited dopant activation in experimental observations.

CdTe↗
DOE OSTI2013

Effects of surface oxide layer on nanocavity formation and silver gettering in hydrogen ion implanted silicon

We have made an investigation of the surface oxide effects on nanocavity formation in hydrogen implanted silicon and the influence of resultant nanocavities on diffusion and gettering of implanted silver atoms. A wafer with a 200-nm SiO{sub 2} surface layer was implanted with 22.5 keV H ions to a dose of 1 Multiplication-Sign 10{sup 17} cm{sup -2}, yielding the concentration peak of implanted H ions at {approx}140 nm below the SiO{sub 2}/Si interface. Subsequently, two sets of Si samples were prepared, depending on whether the oxide layer was etched off before (Group-A) or after (Group-B) post-H-implantation annealing. As evidenced by transmission electron microscopy, Group-A samples exhibited an array of large-sized nanocavities in hexagon-like shape, extending from the surface to the depth {approx}140 nm, whereas a narrow band of sphere-shaped nanocavities of small size was present around 140 nm below the surface in Group-B samples. These Si samples with pre-existing nanocavities were further implanted with Ag ions in the surface region ({approx}40 nm projected range) and post-Ag-implantation annealing was conducted in the temperature range between 600 and 900 Degree-Sign C. Measurements based on Rutherford backscattering spectroscopy revealed much different behaviors for Ag redistribution and defect accumulation in these two sets of samples. Compared to the case for Group-B Si, Group-A Si exhibited a lower concentration of residual defects and a slower kinetics in Ag diffusion as well. We discuss the role of thick surface oxide in point defect generation and recombination, and the consequence on nanocavity formation and defect retention in Si. The properties of nanocavities, e.g., their depth distribution, size, and even shape, are believed to be responsible for the observed disparities between these samples, including an interesting contrast of surface vs. bulk diffusion phenomena for implanted Ag atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Low-Temperature epitaxial growth of InGaAs films on InP(100) and InP(411)A substrates

The structural and electrical characteristics of In{sub 0.53}Ga{sub 0.47}As epitaxial films, grown in the low-temperature mode on InP substrates with (100) and (411)A crystallographic orientations at flow ratios of As4 molecules and In and Ga atoms of γ = 29 and 90, have been comprehensively studied. The use of InP(411)A substrates is shown to increase the probability of forming two-dimensional defects (twins, stacking faults, dislocations, and grain boundaries), thus reducing the mobility of free electrons, and As{sub Ga} point defects, which act as donors and increase the free-electron concentration. An increase in γ from 29 to 90 leads to transformation of single-crystal InGaAs films grown on (100) and (411)A substrates into polycrystalline ones.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Electrical degradation of double-Schottky barrier in ZnO varistors

Researches on electrical degradation of double-Schottky barrier in ZnO varistors are reviewed, aimed at the constitution of a full picture of universal degradation mechanism within the perspective of defect. Recent advances in study of ZnO materials by atomic-scale first-principles calculations are partly included and discussed, which brings to our attention distinct cognition on the native point defects and their profound impact on degradation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Structural and optical properties of dense vertically aligned ZnO nanorods grown onto silver and gold thin films by galvanic effect with iron contamination

Highlights: • ZnO nanorods were grown on Au and Ag films in aqueous solution by galvanic effect. • The method is prone to metal contamination which can influence the ZnO properties. • Iron doping improves the lattice matching between ZnO and the substrate. • Energy levels of point defects are lowered and the light emission is red-shifted. • Galvanic-induced nucleation starts and proceeds continuously during the growth. - Abstract: Dense arrays of vertically aligned ZnO nanorods have been grown onto either silver or gold seedless substrates trough a simple hydrothermal method by exploiting the galvanic effect between the substrate and metallic parts. The nanorods exhibit larger bases and more defined hexagonal shapes, in comparison with standard non-galvanic wet-chemistry synthesis. X-ray diffraction (XRD) shows that the iron contamination, associated with the galvanic contact, significantly improves the in-plane compatibility of ZnO with the Au and Ag cubic lattice. Photoluminescence (PL) measurements indicate that the contamination does not affect the number density of localized defects, but lowers their energy levels uniformly; differently, the band-edge emission is not altered appreciably. Finally, we have found that the ZnO hetero-nucleation by galvanic effect initiates at different times in different sites of the substrate area. Our results can be useful for the fabrication of high performance piezonanodevices comprising high-density metal-to-ZnO nanoscaled junctions without intermediate polycrystalline layers.

77 NANOSCIENCE AND NANOTECHNOLOGY↗