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DOE OSTI2026

Electrostatic Gating of Ionic Conductance through Heterogeneous van der Waals Nanopores

Nanofluidic ionic transistors typically require gate voltages above 1 V and operate only at submillimolar ionic strengths, limiting their biocompatible applications. We demonstrate ionic transistors consisting of single sub-10 nm nanopores drilled in van der Waals (vdW) heterostructures with internal gate electrodes made of few-layer graphene. These devices deliver up to 10-fold current modulation at gate voltages as low as 0.3 V in 10 mM KCl, and ∼2-fold modulation at near-physiological 100 mM KCl. Baseline conductance with no gate shows surface-charge-dominated transport below 100 mM KCl, consistent with negatively charged hBN walls and ∼5 nm opening of the pores. The surface charge and the electrochemical asymmetry introduced by the three-electrode configuration govern the device’s behavior: negative gate voltage (V G ) enriches ionic concentrations and enhances current, whereas positive V G induces a local depletion zone that suppresses transport. The current modulation by V G is dependent on the polarity of the transmembrane potential and leads to ion current rectification. Molecular dynamics simulations of a nanopore in a hBN–graphene–hBN stack reveal confinement and surface charge-dependent suppression of the relative permittivity of interfacial water. Continuum modeling with radially varying interfacial water permittivity reproduces the asymmetric I–V characteristics and explains how the embedded gate sculpts local potential and ion concentrations. By enabling sub-0.5 V control of ionic transport at up to 100 mM salt concentrations, these devices address a key need in nanofluidics to create low-power ionic circuits and biosensing.

Materials science↗

NASA NTRS2005

Ultra-Low-Temperature Homoepitaxial Growth of Sb-Doped Silicon

An ultra-low-temperature process for homoepitaxial growth of high-quality, surface-confined, Sb-doped silicon layers is presented. Non-equilibrium growth by molecular beam epitaxy (MBE) is used to achieve dopant incorporation in excess of 2x10(exp 14) per sq cm in a thin, surface-confined layer. Sb surface segregation larger than expected from theoretical models was observed, in agreement with other experimental works. Furthermore, this work details an entirely low-temperature process (less than 450 degree C) that can be applied to fully processed and aluminum-metallized silicon devices. One application of this process is the formation of a back-surface electrode for back-illuminated high-purity silicon imaging arrays.

Molecular beam epitaxy↗

DOE OSTI2021

Quantum Simulation of Open Quantum Systems Using a Unitary Decomposition of Operators

Electron transport in realistic physical and chemical systems often involves the nontrivial exchange of energy with a large environment, requiring the definition and treatment of open quantum systems. Because the time evolution of an open quantum system employs a nonunitary operator, the simulation of open quantum systems presents a challenge for universal quantum computers constructed from only unitary operators or gates. Here, we present a general algorithm for implementing the action of any nonunitary operator on an arbitrary state on a quantum device. We show that any quantum operator can be exactly decomposed as a linear combination of at most four unitary operators. We demonstrate this method on a two-level system in both zero and finite temperature amplitude damping channels. Furthermore, the results are in agreement with classical calculations, showing promise in simulating nonunitary operations on intermediate-term and future quantum devices.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2022

Selective amorphization of SiGe in Si/SiGe nanostructures via high energy Si+ implant

Here, the selective amorphization of SiGe in Si/SiGe nanostructures via a 1 MeV Si + implant was investigated, resulting in single-crystal Si nanowires (NWs) and quantum dots (QDs) encapsulated in amorphous SiGe fins and pillars, respectively. The Si NWs and QDs are formed during high-temperature dry oxidation of single-crystal Si/SiGe heterostructure fins and pillars, during which Ge diffuses along the nanostructure sidewalls and encapsulates the Si layers. The fins and pillars were then subjected to a 3 × 10 15 ions/cm 2 1 MeV Si + implant, resulting in the amorphization of SiGe, while leaving the encapsulated Si crystalline for larger, 65-nm wide NWs and QDs. Interestingly, the 26-nm diameter Si QDs amorphize, while the 28-nm wide NWs remain crystalline during the same high energy ion implant. This result suggests that the Si/SiGe pillars have a lower threshold for Si-induced amorphization compared to their Si/SiGe fin counterparts. However, Monte Carlo simulations of ion implantation into the Si/SiGe nanostructures reveal similar predicted levels of displacements per cm 3 . Molecular dynamics simulations suggest that the total stress magnitude in Si QDs encapsulated in crystalline SiGe is higher than the total stress magnitude in Si NWs, which may lead to greater crystalline instability in the QDs during ion implant. The potential lower amorphization threshold of QDs compared to NWs is of special importance to applications that require robust QD devices in a variety of radiation environments.

36 MATERIALS SCIENCE↗

NASA NTRS1983

Results from a 'small box' realtime molecular contamination monitor on STS-3

On the basis of early estimates of the Shuttle induced environment, Scialdone (1979) concluded that in the vicinity of the cargo, the cargo would have the largest influence on the environment. As a contamination control device, realtime monitors can indicate safe operational periods for sensitive attached payloads. It was, therefore, decided to develop the OSS-1/Contamination Monitor Package (CMP) experiment which was seen as a forerunner of an operational monitor. A description of the CMP is provided, taking into account four actively temperature controlled quartz crystal microbalances (TQCM). The TQCM temperatures could be varied from -60 C to +80 C. The sensor consisted of a matched pair of quartz crystals. The crystals were designated as a sensor and reference crystal. Results obtained during the STS-3 mission are discussed. These results show the feasibility and advantages of a small real-time contamination monitor.

Triolo, J.↗

DOE OSTI2025

Confocal Raman Microscopy as an In Situ Probe of Volume Change in Hydration-Sensitive Polymer Membranes

An approach is described for measuring hydration-induced volume change within ion conductive polymer membranes and thin films by adapting the technique of confocal Raman microscopy. With careful consideration of factors that affect excitation and scattering within the confocal probe volume region, material swelling and deswelling were estimated from the intensities of polymer matrix spectral features. A high numerical aperture oil-immersion objective was used to achieve tight focusing within samples and the efficient collection of Raman scattered light. The approach is demonstrated for a fluorinated cation-exchange ionomer (Nafion) and the hydrocarbon anion-exchange ionomer Sustainion. Samples were monitored while under a nitrogen atmosphere that was cycled between dry and humid (∼50% relative humidity, RH) states. The volume changes estimated from the Raman spectra were in close agreement with those derived from conventional measurements. The reported work advances understanding needed to adapt confocal Raman microscopy for quantitative in situ and operando studies of ionomers within electrochemical devices, such as polymer electrolyte membrane fuel cells and electrolyzers, and lays a foundation for broader applications in the study of hydration-induced polymer swelling and the associated molecular level water and polymer framework structural changes.

Absorption↗

NASA NTRS1975

Infrared upconversion for astronomical applications

The performance of an upconversion system is examined for observation of astronomical sources in the low to middle infrared spectral range. Theoretical values for the performance parameters of an upconversion system for astronomical observations are evaluated in view of the conversion efficiencies, spectral resolution, field of view, minimum detectable source brightness and source flux. Experimental results of blackbody measurements and molecular absorption spectrum measurements using a lithium niobate upconverter with an argon-ion laser as the pump are presented. Estimates of the expected optimum sensitivity of an upconversion device which may be built with the presently available components are given.

Abbas, M. M.↗

NASA NTRS1993

(abstract) Alkali Metal Diffusion Through Porous Metal Electrodes in AMTEC Cells

The mechanisms of mass transport of an alkali metal through porous metal electrodes in alkali metal thermal-to-electric converter AMTEC cells is important in optimizing these high current density devices, but also affords the opportunity to investigate a variety of simple mass transport modes at high temperatures via electrochemical techniques. We have previously reported evidence of ionic, free molecular flow, and surface transport of sodium in several types of AMTEC electrodes. Quantitative investigations of Na transport through WPt(sub 3.5) via surface or grain boundary diffusion, and K transport through porous Mo electrodes by free molecular flow, over large ranges of temperature have been performed. WPt(sub 3.5) has especially low transport impedance over the 950 to 1200K temperature range. New results are the Na through porous WPt(sub 3.5) and K through porous Mo diffusion rates and mechanisms.

alkali metal mass transport porous metal electrode↗

DOE OSTI2021

Organic Hole Transport Material Ionization Potential Dictates Diffusion Kinetics of Iodine Species in Halide Perovskite Devices

Iodine-containing volatiles are major degradation products of halide perovskite materials under irradiation, yet iodine diffusion kinetics into and throughout organic hole transport materials (HTMs) and consequent reactions are largely unexplored. In this work, we modify the Ca:O 2 corrosion test to Ag:I 2 to quantify I 2 transmission rates through common organic HTMs. We observe I 2 permeability to inversely correlate with HTM ionization energy, or the highest occupied molecular orbital (HOMO) energy. Tracking electronic conductance during exposure to I 2 confirms shallow HOMO HTMs are strongly oxidized (i.e., doped), leading to substantial I 2 uptake and increased transmission rates. Finally, relationships between HOMO level, doping, and transmission rate are maintained when methylammonium lead triiodide (MAPbI 3 ) photolysis products are the only source of iodine. While HTM energetics influence the initial performance of halide perovskite devices by selective charge extraction, our results further suggest they will affect device stability; deeper HOMO energy HTMs will suppress iodine migration and associated degradation mechanisms.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2021

Pressure-induced excimer formation and fluorescence enhancement of an anthracene derivative

Excimer materials have been widely studied and have generated significant interest for their applications in many optoelectronic devices. However, a thorough investigation of the entire process involved in excimer formation, enhancement, and annihilation in solid materials is still lacking. Here we designed a crystal based on an anthracene derivative with dissociative, molecular-ordered dimer assembly, and studied the formation and evolution of an anthracene excimer as a function of pressure. During the initial stage of pressurization, the fluorescence intensity arising from anthracene monomers gradually decreases. Therefore, with continued compression, the two anthracene units become increasingly closer allowing strong intermolecular π–π interactions to develop that lead to excimer formation at 3.5 GPa, accompanied with a phase transition. The fluorescence intensity then keeps increasing with pressure and reaches its maximum at 5.6 GPa due to the strengthening of the excimer and the increased structural defects. Meanwhile the fluorescence color shows a continuous redshift, which initially results from conformation planarization and then excimer evolution. After releasing pressure back to ambient conditions, the structural changes in the sample are reversible, while the fluorescence signal preserves some high-pressure features due to the partial retention of the π–π interactions between the anthracene dimers. This study reveals the evolution of an excimer and its intrinsic photophysical properties, and provides guidance for future research on pressure-sensitive fluorescent devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2022

How arsenic makes amorphous GeSe a robust chalcogenide glass for advanced memory integration

The 3D integration technology in semiconductor fabrication requires a key component, the ovonic threshold switching (OTS) selector, to suppress the current leakage. The As doped amorphous (a-) GeSe glass is a commercialized OTS material in 3D phase-change memory, but the understanding of such a doping mechanism is still inadequate. Here we systematically explore the effect of As doping on the structural, bonding, and dynamics properties of a-GeAsSe using ab initio molecular dynamics simulations. The results reveal that As atoms form strong bonds with both Ge and Se atoms. The distorted octahedral structures and the 5-fold rings linked by atoms are increased. All of these structural features lead to a more disordered configuration. Moreover, as atoms have notably slowed down the atomic mobility, rendering a-GeAsSe a high stability. Overall, our studies offer insightful understanding of As-doping in OTS materials, paving the way for the design and application of advanced selector devices.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Molecular Engineering of 2D Nanomaterial Field-Effect Transistor Sensors: Fundamentals and Translation across Innovation Spectrum

We report over the last decade, 2D layered nanomaterials have attracted significant attention across the scientific community due to their rich and exotic properties. Various nanoelectronic devices based on these 2D nanomaterials have been explored and demonstrated, including those for environmental applications. Here, the fundamental attributes of 2D layered nanomaterials for field-effect transistor (FET) sensors and tunneling FET (TFET) sensors, which provide versatile detection of water contaminants such as heavy-metal ions, bacteria, nutrients, and organic pollutants, are discussed. The major challenges and opportunities are also outlined for designing and fabricating 2D nanomaterial FET/TFET sensors with superior performance. Translation of these FET/TFET sensors from fundamental research to applied technology is illustrated through a case study on graphene-based real-time FET water sensors. A second case study centers on large-scale sensor networks for water-quality monitoring to enable intelligent drinking water and river-water systems. Overall, 2D nanomaterial FET sensors have significant potential for enabling a human-centered intelligent water system that can likely be applied to other precarious water supplies around the globe.

2D nanomaterials↗

DOE OSTI2026

The interaction of acetonitrile with H-terminated and depassivated (100) diamond surfaces

Molecular adsorption on reactive semiconductor surfaces may enable novel surface functionalisation and atomically-precise dopant formation. In this work synchrotron-based x-ray photoelectron spectroscopy and near edge x-ray absorption spectroscopy are used to examine the interaction between acetonitrile and diamond (100) surfaces under ultrahigh vacuum (UHV) conditions. We observe two surface-bound nitrogen species on hydrogen terminated surfaces after thermal depassivation or following synchrotron radiation and subsequent exposure to acetonitrile, but find no evidence of nitrogen adsorption on the hydrogen-terminated diamond surface, at room temperature. Subsequent measurements explore the stability of the surface-bound nitrogen under various temperature conditions and with atmospheric exposure. While the nitrogen coverage achieved in this study is low, this study serves as a proof-of-concept demonstration of a UHV molecular dosing approach to selective nitrogen functionalisation of diamond surfaces as an alternative to plasma-based approaches. This development may be critical for proposed surface-based fabrication workflows using atomic placement of nitrogen-vacancy centres to create quantum devices.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2021

Ab initio molecular dynamics on quantum computers

Ab initio molecular dynamics (AIMD) is a valuable technique for studying molecules and materials at finite temperatures where the nuclei evolve on potential energy surfaces obtained from accurate electronic structure calculations. In this work, we present an approach to running AIMD simulations on noisy intermediate-scale quantum (NISQ)-era quantum computers. The electronic energies are calculated on a quantum computer using the variational quantum eigensolver (VQE) method. Algorithms for computation of analytical gradients entirely on a quantum computer require quantum fault-tolerant hardware, which is beyond NISQ-era. Therefore, we compute the energy gradients numerically using finite differences, the Hellmann-Feynman theorem, and a correlated sampling technique. This method only requires additional classical calculations of electron integrals for each degree of freedom without any additional computations on a quantum computer beyond the initial VQE run. As a proof of concept, AIMD simulations are demonstrated for the H-2 molecule on IBM quantum devices. In addition, we demonstrate the validity of the method for larger molecules using full configuration interaction wave functions. As quantum hardware and noise mitigation techniques continue to improve, the method can be utilized for studying larger molecular systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2025

Large scale polymer toughening of two-dimensional materials revealed by in situ TEM fracture tests and multiscale simulations

Two-dimensional (2D) materials offer significant potential for applications in energy-harvesting devices, batteries, sensors, and transistors. However, their intrinsic brittleness makes them prone to mechanical failure, limiting their practical use. In this work, we perform in situ transmission electron microscopy (TEM) fracture tests on monolayer MoSe2 and uncover an extrinsic toughening effect induced by an ultrathin adsorbed polystyrene adlayer. This adlayer substantially enhances the fracture resistance of the 2D flakes. Through a combination of molecular dynamics simulations and finite element analysis, we elucidate the molecular mechanism behind this toughening effect. Further, it arises from the active crack-bridging behavior of entangled polymer chains and the formation of a fracture process zone that stabilizes crack propagation and increases the energy required for crack extension. The proposed toughening mechanism offers a pathway to improving the mechanical reliability of 2D material-based devices by mitigating the risk of sudden failure.

2D materials↗

DOE OSTI2025

Impact of Halogen Groups on the Properties of PEA–Based 2D Pb–Sn Halide Perovskites

Tuning broad emission in 2D Pb–Sn halide perovskites (HPs) is essential for advancing optoelectronic applications, particularly for color-tunable and white-light-emitting devices. This broad emission is linked to structural factors, such as defects and phase segregation of the Pb component within the Pb–Sn system, which are strongly influenced by the molecular structure and chemical properties of spacer cations. Atomic tuning of the spacers via halogenation opens up a new way to fine-tune the molecular properties, enabling further augmentations of HP functionalities. Nevertheless, the distinct broad emission's sensitivity to spacer chemistry remains underexplored. Here, halogenation's influence is systematically investigated on 2D HP emission characteristics using a high-throughput workflow. These findings reveal that the F-containing phenethylammonium (4F-PEA) spacer narrows the broadband PL, whereas Cl broadens it. Through a correlative study, it is found that 4F-PEA reduces not only the local phase segregation but also the defect levels and microstrains in 2D HPs. This is likely attributed to the manifestation of less lattice distortion via stronger surface coordination of the dipole-augmented 4F-PEA. Furthermore, these results highlight halogenation as a key factor in modulating phase segregation and defect density in 2D Pb–Sn HPs, offering a promising pathway to tune the emission for enhanced optoelectronic performance.

2D Pb-Sn halide perovskites↗

DOE OSTI2020

Crown Ether Modulation Enables over 23% Efficient Formamidinium-Based Perovskite Solar Cells

The use of molecular modulators to reduce the defect density at the surface and grain boundaries of perovskite materials has been demonstrated to be an effective approach to enhance the photovoltaic performance and device stability of perovskite solar cells. Herein, we employ crown ethers to modulate perovskite films, affording passivation of undercoordinated surface defects. This interaction has been elucidated by solid-state nuclear magnetic resonance and density functional theory calculations. The crown ether hosts induce the formation of host-guest complexes on the surface of the perovskite films, which reduces the concentration of surface electronic defects and suppresses nonradiative recombination by 40%, while minimizing moisture permeation. As a result, we achieved substantially improved photovoltaic performance with power conversion efficiencies exceeding 23%, accompanied by enhanced stability under ambient and operational conditions. This work opens a new avenue to improve the performance and stability of perovskite-based optoelectronic devices through supramolecular chemistry.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2021

Gate-free state preparation for fast variational quantum eigensolver simulations

Abstract The variational quantum eigensolver is currently the flagship algorithm for solving electronic structure problems on near-term quantum computers. The algorithm involves implementing a sequence of parameterized gates on quantum hardware to generate a target quantum state, and then measuring the molecular energy. Due to finite coherence times and gate errors, the number of gates that can be implemented remains limited. In this work, we propose an alternative algorithm where device-level pulse shapes are variationally optimized for the state preparation rather than using an abstract-level quantum circuit. In doing so, the coherence time required for the state preparation is drastically reduced. We numerically demonstrate this by directly optimizing pulse shapes which accurately model the dissociation of H 2 and HeH + , and we compute the ground state energy for LiH with four transmons where we see reductions in state preparation times of roughly three orders of magnitude compared to gate-based strategies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗