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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Silicon compatible Sn-based resistive switching memory

Large banks of cheap, fast, non-volatile, energy efficient, scalable solid-state memories are an increasingly essential component for today's data intensive computing. Conductive-bridge random access memory (CBRAM) – which involves voltage driven formation and dissolution of Cu or Ag filaments in a Cu (or Ag) anode/dielectric (HfO 2 or Al 2 O 3 )/inert cathode device – possesses the necessary attributes to fit the requirements. Cu and Ag are, however, fast diffusers and known contaminants in silicon microelectronics. In this paper, employing a criterion for electrode metal selection applicable to cationic filamentary devices and using first principles calculations for estimating diffusion barriers in HfO 2 , we identify tin (Sn) as a rational, silicon CMOS compatible replacement for Cu and Ag anodes in CBRAM devices. We then experimentally fabricate Sn based CBRAM devices and demonstrate very fast, steep-slope memory switching as well as threshold switching, comparable to Cu or Ag based devices. Furthermore, time evolution of the cationic filament formation along with the switching mechanism is discussed based on time domain measurements (I vs. t) carried out under constant voltage stress. Finally, the time to threshold is shown to be a function of both the voltage stress (V stress ) as well as the initial leakage current (I 0 ) through the device.

42 ENGINEERING↗
DOE OSTI2021

Epitaxial nanotwinned metals and alloys: synthesis-twin structure–property relations

Extensive studies have been performed to understand the structure–property relationship in nanotwinned (NT) metals, where the average twin thickness or twin spacing is less than 100 nm. NT metals may have high strength, ductility, good electrical conductivity and corrosion resistance and have promising applications in microelectronics, structural materials and coatings for gas and oil industry. Most prior studies focus on the computational and experimental investigations of NT metals with low stacking fault energy (SFE) and often in polycrystalline forms. In this highlight, we review recent findings on epitaxial growth of NT metals and alloys with low and high SFEs deposited on single crystal substrates, and focus primarily on advancing our comprehension towards tailoring the microstructures and properties of NT metals via extrinsic factors, including the synthesis technique, parametric control and growth template, and intrinsic factors, such as SFE and thermodynamic, kinetic alloying effects. The review intends to illuminate how to synthesize and design epitaxial NT structures to achieve desirable properties.

36 MATERIALS SCIENCE↗
DOE OSTI2023

High- χ diblock copolymers containing poly(vinylpyridine- N -oxide) segments

Block copolymers exhibiting an enhanced segregation strength due to an underlying high Flory–Huggins interaction parameter (high χ) have attracted considerable attention because of their potential of forming microphase-separated domains with very small feature sizes (<10 nm) useful for next-generation lithography. Here, we report the synthesis, characterization, and self-assembly of poly(styrene)- block -poly(2-vinylpyridine N -oxide) (PS- b -P2VPNO) and poly(styrene)- block -poly(4-vinylpyridine N -oxide) (PS- b -P4VPNO) block copolymers. These PS- b -PVPNOs were obtained from the oxidation of their precursors, poly(styrene)- block -poly(2-vinylpyridine) (PS- b -P2VP) and poly(styrene)- block -poly(4-vinylpyridine) (PS- b -P4VP), respectively. The PS- b -PVPNOs exhibit an enhanced segregation as revealed by ordered cylindrical and lamellar structures in the sub-10 nm scale from copolymers with relatively low molecular weight. The morphologies and periodicities of the ordered structures were determined by small-angle X-ray scattering, while atomic-force microscopy was used to image the self-assembly in thin films. Estimates of the changes in disorder–order transition temperature and domain spacing are derived from a theory based on the effects of dipolar interactions. All the experimentally observed morphological changes resulting from the oxidation of P2VP and P4VP precursors can be qualitatively explained in terms of an increased dipole moment of vinylpyridine N -oxide segments. Therefore, our results demonstrate that PVPNO based block copolymers are versatile candidates toward nanopatterned structures with small feature sizes critical for the future microelectronics industry and beyond.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Assessment of wafer scale MoS 2 atomic layers grown by metal–organic chemical vapor deposition using organo-metal, organo-sulfide, and H 2 S precursors

Transition Metal Dichalcogenides (TMDs) are a unique class of materials that exhibit attractive electrical and optical properties which have generated significant interest for applications in microelectronics, optoelectronics, energy storage, and sensing. Considering the potential of these materials to impact such applications, it is crucial to develop a reliable and scalable synthesis process that is compatible with modern industrial manufacturing methods. Metal–organic chemical vapor deposition (MOCVD) offers an ideal solution to produce TMDs, due to its compatibility with large-scale production, precise layer control, and high material purity. Optimization of MOCVD protocols is necessary for effective TMD synthesis and integration into mainstream technologies. Additionally, improvements in metrology are necessary to measure the quality of the fabricated samples more accurately. In this work, we study MOCVD of wafer-scale molybdenum disulfide (MoS 2 ) utilizing two common chalcogen precursors, H 2 S and DTBS. We then develop a metrology platform for wafer scale samples quality assessment. For this, the coalesced films were characterized using Raman spectroscopy, atomic force microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, and Kelvin probe force microscopy. We then correlate the structural analysis of these grown films with electrical performance by using aerosol jet printing to fabricate van der Pauw test structures and assess sheet resistance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Importance of cross reaction covariance data for user applications

The characterization of the uncertainty in radiation damage metrics presents many challenges. This paper examines the current approaches to characterizing radiation damage metrics such as hydrogen and helium gas production, material heating, trapped charge in microelectronics, and lattice displacement damage. Critical uncertainty aspects go beyond just the material cross sections and involve the consideration of energy-dependent cross reaction correlations, the recoil ion energy spectrum, and models used for the partitioning of the recoil ion energy into various forms of energy deposition. This paper starts with a review of terminology and then examines the current approaches in the characterization of uncertainty in radiation damage metrics for several applications. The major deficiencies in the uncertainty of the damage metric characterization are also identified.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Investigation of electrochemical migration on Sn-0.7Cu-0.3Ag-0.03P-0.005Ni solder alloy in HNO{sub 3} solution

Current issue in lead-free solder in term of its reliability is still under investigation. This high impact research attempts to investigate the electrochemical migration (ECM) on Sn-0.7Cu-0.3Ag-0.03P-0.005Ni solder alloy by Water Drop Test (WDT) in different concentration of HNO{sub 3} solution. The concentration of HNO{sub 3} solution used in this research was 0.05, 0.10, 0.50 and 1M. Optical Microscope (OM), Field Emission Scanning Electron Microscope (FESEM) and Energy Dispersive X-Ray Analysis (EDX) were carried out in order to analysis the ECM behavior based on the growth of dendrite formation after WDT. In general, the results demonstrated that dendrite growth is faster in higher concentration compared with low concentration of HNO{sub 3}. The concentration of HNO{sub 3} solution used has a strong correlation with Mean-Time-To-Failure (MTTF). As the concentration of HNO{sub 3} increases, the MTTF value decreases. Based on the MTTF results the solder alloy in 1M HNO{sub 3} solution is most susceptible to ECM. SnO{sub 2} forms as a corrosion by-product in the samples proved by EDX analysis. The solder alloy poses a high reliability risk in microelectronic devices during operation in 1M HNO{sub 3} solution.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Effect of gamma radiation on micromechanical hardness of lead-free solder joint

Lead-free solders are important material in nano and microelectronic surface mounting technology for various applications in bio medicine, environmental monitoring, spacecraft and satellite instrumentation. Nevertheless solder joint in radiation environment needs higher reliability and resistance to any damage caused by ionizing radiations. In this study a lead-free 99.0Sn0.3Ag0.7Cu wt.% (SAC) solder joint was developed and subjected to various doses of gamma radiation to investigate the effects of the ionizing radiation to micromechanical hardness of the solder. Averaged hardness of the SAC joint was obtained from nanoindentation test. The results show a relationship between hardness values of indentations and the increment of radiation dose. Highest mean hardness, 0.2290 ± 0.0270 GPa was calculated on solder joint which was exposed to 5 Gray dose of gamma radiation. This value indicates possible radiation hardening effect on irradiated solder. The hardness gradually decreased to 0.1933 ± 0.0210 GPa and 0.1631 ± 0.0173 GPa when exposed to doses 50 and 500 gray respectively. These values are also lower than the hardness of non irradiated sample which was calculated as 0.2084 ± 0.0.3633 GPa indicating possible radiation damage and needs further related atomic dislocation study.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Steady-state low thermal resistance characterization apparatus: The bulk thermal tester

The reliability of microelectronic devices is largely dependent on electronic packaging, which includes heat removal. The appropriate packaging design therefore necessitates precise knowledge of the relevant material properties, including thermal resistance and thermal conductivity. Thin materials and high conductivity layers make their thermal characterization challenging. A steady state measurement technique is presented and evaluated with the purpose to characterize samples with a thermal resistance below 100 mm{sup 2} K/W. It is based on the heat flow meter bar approach made up by two copper blocks and relies exclusively on temperature measurements from thermocouples. The importance of thermocouple calibration is emphasized in order to obtain accurate temperature readings. An in depth error analysis, based on Gaussian error propagation, is carried out. An error sensitivity analysis highlights the importance of the precise knowledge of the thermal interface materials required for the measurements. Reference measurements on Mo samples reveal a measurement uncertainty in the range of 5% and most accurate measurements are obtained at high heat fluxes. Measurement techniques for homogeneous bulk samples, layered materials, and protruding cavity samples are discussed. Ultimately, a comprehensive overview of a steady state thermal characterization technique is provided, evaluating the accuracy of sample measurements with thermal resistances well below state of the art setups. Accurate characterization of materials used in heat removal applications, such as electronic packaging, will enable more efficient designs and ultimately contribute to energy savings.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Effect of the order of He{sup +} and H{sup +} ion co-implantation on damage generation and thermal evolution of complexes, platelets, and blisters in silicon

Hydrogen and helium co-implantation is nowadays used to efficiently transfer thin Si layers and fabricate silicon on insulator wafers for the microelectronic industry. The synergy between the two implants which is reflected through the dramatic reduction of the total fluence needed to fracture silicon has been reported to be strongly influenced by the implantation order. Contradictory conclusions on the mechanisms involved in the formation and thermal evolution of defects and complexes have been drawn. In this work, we have experimentally studied in detail the characteristics of Si samples co-implanted with He and H, comparing the defects which are formed following each implantation and after annealing. We show that the second implant always ballistically destroys the stable defects and complexes formed after the first implant and that the redistribution of these point defects among new complexes drives the final difference observed in the samples after annealing. When H is implanted first, He precipitates in the form of nano-bubbles and agglomerates within H-related platelets and nano-cracks. When He is implanted first, the whole He fluence is ultimately used to pressurize H-related platelets which quickly evolve into micro-cracks and surface blisters. We provide detailed scenarios describing the atomic mechanisms involved during and after co-implantation and annealing which well-explain our results and the reasons for the apparent contradictions reported at the state of the art.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Computational study of AuSi{sub n} (n=1-9) nanoalloy clusters invoking DFT based descriptors

Nanoalloy clusters formed between Au and Si are topics of great interest today from both scientific and technological point of view. Due to its remarkable catalytic, electronic, mechanical and magnetic properties Au-Si nanoalloy clusters have extensive applications in the field of microelectronics, catalysis, biomedicine, and jewelry industry. Density Functional Theory (DFT) is a new paradigm of quantum mechanics, which is very much popular to study the electronic properties of materials. Conceptual DFT based descriptors have been invoked to correlate the experimental properties of nanoalloy clusters. In this venture, we have systematically investigated AuSi{sub n} (n=1-9) nanoalloy clusters in the theoretical frame of the B3LYP exchange correlation. The experimental properties of AuSi{sub n} (n=1-9) nanoalloy clusters are correlated in terms of DFT based descriptors viz. HOMO-LUMO gap, Electronegativity (χ), Global Hardness (η), Global Softness (S) and Electrophilicity Index (ω). The calculated HOMO-LUMO gap exhibits interesting odd-even alteration behaviour, indicating that even numbered clusters possess higher stability as compare to their neighbour odd numbered clusters. This study also reflects a very well agreement between experimental bond length and computed data.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Highly sensitive simple homodyne phase detector for ultrasonic pulse-echo measurements

Progress in microelectronic technology has allowed us to design and develop a simple but, professional quality instrument for ultrasonic pulse-echo probing of the elastic properties of materials. The heart of this interfer- ometer lies in the AD8302 microchip, a gain and phase detector from Analog Devices, Inc. The interferometer was tested by measuring the temperature dependences of the ultrasound speed and attenuation in a ferro- electric KTa 0.92 Nb 0.08 O 3 (KTN) crystal at a frequency of about 40 MHz. These tests demonstrated that our instrument is capable of detecting the relative changes in the sound speed v on the level of Δv/v ~ 10 –7 . In addition, the ultrasound attenuation revealed new features in the development of the low-temperature structure of the ferroelectric KTN crystal.

45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEF↗
DOE OSTI2016

Synthesis of bismuth tungstate (Bi{sub 2}WO{sub 6}) nanoflakes and their field emission investigation

The nanoflakes of Bismuth Tungstate (Bi{sub 2}WO{sub 6}) were successfully synthesized by a one-step facile hydrothermal route without using any templates or surfactants and field emission investigations of the Bi{sub 2}WO{sub 6} nanoflakes emitter are reported. Structural and morphological analysis of as-synthesized Bi{sub 2}WO{sub 6} nanoflakes has been carried out using X-ray diffraction (XRD) and scanning electron microscope (SEM). Moreover, the field emission characteristics of the Bi{sub 2}WO{sub 6} nanoflakes are found to be superior to the other semiconductor emitters. The synthesized Bi{sub 2}WO{sub 6} nanoflakes emitter delivers current density of ~222.35 μA/cm{sup 2} at an applied electric field of ~7.2 V/μm. The emission current stability investigated at pre-set value of ~2 μA is observed to be fairly good. These observed results demonstrate potential candidate of the Bi{sub 2}WO{sub 6} cathode as an electron source for practical applications in vacuum microelectronic device.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

SHI induced damage in electrical properties of silicon NPN BJTs

The investigation of radiation damage in Si microelectronic circuitry and devices are being carried out by various research groups globally. In particular the Si Bipolar junction transistors are very sensitive to high energetic radiation. In the present study, radiation response of NPN Bipolar junction transistor (2N3773) has been examined for 60 MeV B{sup 4+} ion. Key electrical properties like Gummel, dc current gain and capacitance – voltage (C-V) characteristics of 60 MeV B{sup 4+} ion irradiated transistor were studied before and after irradiation. Ion irradiation and subsequent electrical characterizations were performed at room temperature. Current voltage (I-V) measurements showed the increase in collector current for V{sub BE} ≤ 0.4 V as a function of fluence, which is due to B{sup 4+} ion induced surface leakage currents. Base current is observed to be more sensitive than collector current and gain appears to be degraded with ion fluence. Also, C-V measurements shows that both built in potential and doping concentration increased significantly after irradiation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Ultra-thin flexible GaAs photovoltaics in vertical forms printed on metal surfaces without interlayer adhesives

Wearable flexible electronics often require sustainable power sources that are also mechanically flexible to survive the extreme bending that accompanies their general use. In general, thinner microelectronic devices are under less strain when bent. This paper describes strategies to realize ultra-thin GaAs photovoltaics through the interlayer adhesiveless transfer-printing of vertical-type devices onto metal surfaces. The vertical-type GaAs photovoltaic devices recycle reflected photons by means of bottom electrodes. Systematic studies with four different types of solar microcells indicate that the vertical-type solar microcells, at only a quarter of the thickness of similarly designed lateral-type cells, generate a level of electric power similar to that of thicker cells. The experimental results along with the theoretical analysis conducted here show that the ultra-thin vertical-type solar microcells are durable under extreme bending and thus suitable for use in the manufacturing of wearable flexible electronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Thermoacoustic and thermoreflectance imaging of biased integrated circuits: Voltage and temperature maps

In this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Enhanced axial confinement in a monolithically integrated self-rolled-up SiN x vertical microring photonic coupler

We report an efficient method to introduce enhanced axial confinement in the self-rolled-up SiN x vertical microtube coupler by depositing a thin layer of high refractive index material strip within the coupling section and effectively forming a vertical microring. Three times wider mode spacing is observed in such a vertical microring coupler monolithically integrated with a silicon nitride ridge waveguide as compared to the one without such axial confinement. More importantly, single mode operation within the telecomm C-band and S-band is achieved. The self-rolled-up microtube has been demonstrated to be a versatile device platform, which has found application in a number of areas including nanophotonics,1–7 microelectronics,8 chemical and biological sensing,9–11 and intelligent synthetic neural circuits.12 Because the microtube is a three dimensional (3D) structure readily fabricated using two dimensional processing technology, it may serve naturally as a component in 3D-integrated devices. We had previously demonstrated a vertical microtube coupler (VμTC) monolithically integrated with planar ridge waveguides in silicon photonic platform to achieve 3D photonic coupling and observed greatly enhanced coupling between the microtube and the underlying ridge waveguide.1,13 A similar result was reported independently by another research group shortly thereafter.2 One limitation of the VμTC used in previous experiments is that it supports many modes within the telecommunication C-band because of poor axial confinement. For example, we found multiple resonant coupling peaks, which is not desirable for wavelength division multiplexing (WDM) switches. In order to increase the mode spacing of this 3D photonic coupler and to achieve single mode operation within the C-band, we propose efficient axial confinement in the microtube to suppress the higher order modes. Axial confinement in self-rolled-up microtubes had been studied both theoretically and experimentally by a couple of research groups.14–17 In all these previous cases, the axial confinement was introduced by a specially designed geometrical shape of a section of the microtube. After being rolled up, the microtube wall will have different thicknesses at different axial locations. The different wall thicknesses result in a slightly varying effective refractive index of the supported whispering gallery modes (WGMs) along the axial direction of the microtube. When a parabolic shape is used, the effective index of the WGM at the center of the parabola will be the highest and decrease adiabatically along both sides. However, the refractive index change due to different wall thicknesses is very small; hence, the axial confinement is rather weak. Here in this paper, we present our experimental endeavor to incorporate a different axial confinement scheme in the monolithically integrated vertical microtube (VμT) to form a vertical microring (VμR) resonator and demonstrate 3 times wider mode spacing than the microtube based vertical photonic coupler and the potential to achieve a higher Q-factor.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Current-induced surface roughness reduction in conducting thin films

Thin film surface roughness is responsible for various materials reliability problems in microelectronics and nanofabrication technologies, which requires the development of surface roughness reduction strategies. Toward this end, we report modeling results that establish the electrical surface treatment of conducting thin films as a physical processing strategy for surface roughness reduction. We develop a continuum model of surface morphological evolution that accounts for the residual stress in the film, surface diffusional anisotropy and film texture, film’s wetting of the layer that is deposited on, and surface electromigration. Supported by linear stability theory, self-consistent dynamical simulations based on the model demonstrate that the action over several hours of a sufficiently strong and properly directed electric field on a conducting thin film can reduce its surface roughness and lead to a smooth planar film surface. In conclusion, the modeling predictions are in agreement with experimental measurements on copper thin films deposited on silicon nitride layers.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Effects of a chirped bias voltage on ion energy distributions in inductively coupled plasma reactors

The metrics for controlling reactive fluxes to wafers for microelectronics processing are becoming more stringent as feature sizes continue to shrink. Recent strategies for controlling ion energy distributions to the wafer involve using several different frequencies and/or pulsed powers. Although effective, these strategies are often costly or present challenges in impedance matching. With the advent of matching schemes for wide band amplifiers, other strategies to customize ion energy distributions become available. In this study, we discuss results from a computational investigation of biasing substrates using chirped frequencies in high density, electronegative inductively coupled plasmas. Depending on the frequency range and chirp duration, the resulting ion energy distributions exhibit components sampled from the entire frequency range. However, the chirping process also produces transient shifts in the self-generated dc bias due to the reapportionment of displacement and conduction with frequency to balance the current in the system. Finally, the dynamics of the dc bias can also be leveraged towards customizing ion energy distributions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗