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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/silicon-on-insulator lateral spin valves

Local magnetoresistance (MR) through silicon (Si) and its bias voltage (V{sub bias}) (bias current (I{sub bias})) dependence in ferromagnet (FM)/MgO/silicon-on-insulator lateral spin valves are investigated. From the experimental measurements, we find that the local-MR through Si increases with increasing V{sub bias}. This anomalous increase of local-MR as a function of V{sub bias} can be understood by considering the standard drift-diffusion theory improved by taking into account the difference in the interface resistances and first order quantum effect between FM/MgO/Si (source) and Si/MgO/FM (drain) interfaces. The interface resistance dependence on experimentally obtained local-MR ratios also agrees with the improved standard spin diffusion theory. These results indicate that experimentally observed local-MR is certainly related to the spin signal through the Si bulk band.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Anomalous output characteristic shift for the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer

Anomalous output characteristic shift of the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer is investigated. It shows that the linear drain current has obvious decrease when the output characteristic of fresh device is measured for two consecutive times. The charge pumping experiments demonstrate that the decrease is not from hot-carrier degradation. The reduction of cross section area for the current flowing, which results from the squeezing of the depletion region surrounding the P-top layer, is responsible for the shift. Consequently, the current capability of this special device should be evaluated by the second measured output characteristic.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Thermal engineering of non-local resistance in lateral spin valves

We study the non-local spin transport in Permalloy/Cu lateral spin valves (LSVs) fabricated on thermally oxidized Si and MgO substrates. While these LSVs show the same magnitude of spin signals, significant substrate dependence of the baseline resistance was observed. The baseline resistance shows much weaker dependence on the inter-electrode distance than that of the spin transport observed in the Cu wires. A simple analysis of voltage-current characteristics in the baseline resistance indicates the observed result can be explained by a combination of the Peltier and Seebeck effects at the injector and detector junctions, suggesting the usage of high thermal conductivity substrate (or under-layer) is effective to reduce the baseline resistance.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Application of lateral photovoltage towards contactless light beam induced current measurements and its dependence on the finite beam size

The nature of the signal due to light beam induced current (LBIC) at the remote contacts is verified as a lateral photovoltage for non-uniformly illuminated planar p-n junction devices; simulation and experimental results are presented. The limitations imposed by the ohmic contacts are successfully overcome by the introduction of capacitively coupled remote contacts, which yield similar results without any significant loss in the estimated material and device parameters. It is observed that the LBIC measurements introduce artefacts such as shift in peak position with increasing laser power. Simulation of LBIC signal as a function of characteristic length L{sub c} of photo-generated carriers and for different beam diameters has resulted in the observed peak shifts, thus attributed to the finite size of the beam. Further, the idea of capacitively coupled contacts has been extended to contactless measurements using pressure contacts with an oxidized aluminium electrodes. This technique avoids the contagious sample processing steps, which may introduce unintentional defects and contaminants into the material and devices under observation. Thus, we present here, the remote contact LBIC as a practically non-destructive tool in the evaluation of device parameters and welcome its use during fabrication steps.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Enhancement of minority carrier lifetime of GaInP with lateral composition modulation structure grown by molecular beam epitaxy

We report the enhancement of the minority carrier lifetime of GaInP with a lateral composition modulated (LCM) structure grown using molecular beam epitaxy (MBE). The structural and optical properties of the grown samples are studied by transmission electron microscopy and photoluminescence, which reveal the formation of vertically aligned bright and dark slabs corresponding to Ga-rich and In-rich GaInP regions, respectively, with good crystal quality. With the decrease of V/III ratio during LCM GaInP growth, it is seen that the band gap of LCM GaInP is reduced, while the PL intensity remains high and is comparable to that of bulk GaInP. We also investigate the minority carrier lifetime of LCM structures made with different flux ratios. It is found that the minority carrier lifetime of LCM GaInP is ∼37 times larger than that of bulk GaInP material, due to the spatial separation of electrons and holes by In-rich and Ga-rich regions of the LCM GaInP, respectively. We further demonstrate that the minority carrier lifetime of the grown LCM GaInP structures can easily be tuned by simply adjusting the V/III flux ratio during MBE growth, providing a simple yet powerful technique to tailor the electrical and optical properties at will. The exceptionally high carrier lifetime and the reduced band gap of LCM GaInP make them a highly attractive candidate for forming the top cell of multi-junction solar cells and can enhance their efficiency, and also make them suitable for other optoelectronics devices, such as photodetectors, where longer carrier lifetime is beneficial.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Towards reproducible, scalable lateral molecular electronic devices

An approach to reproducibly fabricate molecular electronic devices is presented. Lateral nanometer-scale gaps with high yield are formed in Au/Pd nanowires by a combination of electromigration and Joule-heating-induced thermomechanical stress. The resulting nanogap devices are used to measure the electrical properties of small numbers of two different molecular species with different end-groups, namely 1,4-butane dithiol and 1,5-diamino-2-methylpentane. Fluctuations in the current reveal that in the case of the dithiol molecule devices, individual molecules conduct intermittently, with the fluctuations becoming more pronounced at larger biases.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system

We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Effect of quantum well non-uniformities on lasing threshold, linewidth, and lateral near field filamentation in violet (Al,In)GaN laser diodes

The lateral near field patterns and filamentation effects of gain guided broad area (Al,In)GaN-based laser diodes emitting around 415 nm have been investigated. Diodes from the same laser bar, which are close to each other, show nearly the same number and widths of filaments. Comparison of different bars, which are from the same wafer but further apart from each other, reveals that a higher number of filaments correlates with a higher laser threshold and broader spectral linewidth. Cathodoluminescence mappings at 80 K show strong variations of the quantum well band gap and hence of the emission wavelength for the bars with strong filamentation. These observations confirm previous theoretical predictions stating that large band gap fluctuations increase the threshold current and spectral linewidth. Furthermore, filamentation is enhanced as well because of a reduction of the carrier diffusion length.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Ordered domain lateral location, symmetry, and thermal stability in Ge:Si islands

Compositional atomic ordering is a crucial issue in the epitaxial growth of nanoparticles and thin films. Here, we report on a method based on x-ray diffuse scattering close to basis forbidden Bragg reflections to infer the lateral location, the symmetry, and the thermal stability of ordered domains in GeSi dome-shaped islands on Si(001) after growth and during annealing. We observe that atomic ordering does not disappear after annealing, demonstrating that it is a resilient metastable phenomenon.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Simulation and characterization of a laterally-driven inertial micro-switch

A laterally-driven inertial micro-switch was designed and fabricated using surface micromachining technology. The dynamic response process was simulated by ANSYS software, which revealed the vibration process of movable electrode when the proof mass is shocked by acceleration in sensitive direction. The test results of fabricated inertial micro-switches with and without anti-shock beams indicated that the contact process of micro-switch with anti-shock beams is more reliable than the one without anti-shock beams. The test results indicated that three contact signals had been observed in the contact process of the inertial switch without anti-shock beams, and only one contact signal in the inertial switch with anti-shock beams, which demonstrated that the anti-shock beams can effectively constrain the vibration in non-sensitive direction.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Determination of the thermal diffusivity of bulk and layered samples by time domain thermoreflectance: Interest of lateral heat diffusion investigation in nanoscale time range

We report on thermal investigations performed in a time resolved experimental scheme. The time domain thermoreflectance (TDTR) is applied in an unusual geometry where the pump and probe beams are not superimposed but focused and shifted. In this way, the determination of the in-plane thermal diffusivity is achieved from temperature snapshots at different time delays. In the first part, taking into account the specific generation process and the detection inherent to the time domain thermoreflectance approach, an analytical solution for the temperature field is obtained for bulk samples, and compared to experimental data. A comparison with the frequency domain thermoreflectance microscopy is also outlined. In Part II section, the lateral heat diffusion in a layered structure is investigated. The comparison of the heat diffusion spreading in case of a highly conductive layer deposited on an insulator substrate and the reverse situation are carefully studied. Finally, we show how the time dependence is efficient to probe and identify material thermal properties or thermal interfacial resistance.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Growth of very large InN microcrystals by molecular beam epitaxy using epitaxial lateral overgrowth

Very thick InN (∼40 μm) was grown by molecular beam epitaxy using the epitaxial lateral overgrowth (ELO) technique. In some regions, the ELO of InN was observed as expected, indicating an important step toward fabricating quasi-bulk InN substrates. Interestingly, most parts of the sample consist of large flat-topped microcrystals and well-faceted microstructures. This is likely due to local growth condition variations during ELO, which is supported by an experiment where ELO of InN was performed on a substrate with various stripe mask patterns. TEM characterization of a flat top InN microcrystal revealed few stacking faults and only related threading dislocations. Defect-free small faceted microcrystals were also observed. The thick InN crystals show a narrow photoluminescence spectrum with a peak at 0.679 eV and linewidth of 16.8 meV at 4 K.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Laterally patterned spin-valve superlattice: Magnetometry and polarized neutron scattering study

The magnetization reversal of magnetic multilayers with spin-valve like characteristics, patterned into an array of parallel stripes, was structurally and magnetically analyzed, in detail, via x-ray scattering, magnetometry, and polarized neutron reflectivity. Each stripe contains a multiple repetition of the layer sequence [Fe/Cr/Co/Cr]. X-ray and neutron scattering maps of the patterned multilayer show rich details resulting from the superposition of Bragg peaks representing the lateral in-plane periodicity and the out-of-plane multilayer period. Detailed analysis of specular and off-specular polarized neutron intensity was used to ascertain the antiparallel alignment of the Co and Fe magnetization within the kink region of their combined hysteresis loop between the coercive fields of Fe and Co layers. This includes also an examination of domain formation and inter- as well as intra-stripe correlation effects upon magnetization reversal. Our combined study shows that the shape induced anisotropy via patterning is capable of overriding the four-fold crystal anisotropy but is unable to eliminate the ripple domain state of the Co layers, already present in the continuous multilayer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Coalescence of GaAs on (001) Si nano-trenches based on three-stage epitaxial lateral overgrowth

The coalescence of selective area grown GaAs regions has been performed on patterned 1.8 μm GaAs buffer layer on Si via metal-organic chemical vapor deposition. We propose a promising method of three-stage epitaxial lateral overgrowth (ELO) to achieve uniform coalescence and flat surface. Rough surface caused by the coalescence of different growth fronts is smoothened by this method. Low root-mean-square surface roughness of 6.29 nm has been obtained on a 410-nm-thick coalesced ELO GaAs layer. Cross-sectional transmission electron microscope study shows that the coalescence of different growth fronts will induce some new dislocations. However, the coalescence-induced dislocations tend to mutually annihilate and only a small part of them reach the GaAs surface. High optical quality of the ELO GaAs layer has been confirmed by low temperature (77 K) photoluminescence measurements. This research promises a very large scale integration platform for the monolithic integration of GaAs-based device on Si.

36 MATERIALS SCIENCE↗
DOE OSTI2015

An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth

An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reduction effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm{sup 2} at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm{sup 2}, an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Lateral electric-field control of giant magnetoresistance in Co/Cu/Fe/BaTiO{sub 3} multiferroic heterostructure

We report lateral electric-field-driven sizable changes in the magnetoresistance of Co/Cu/Fe tri-layered wires on BaTiO{sub 3} single crystal. While the observed change is marginal in the tetragonal phase of BaTiO{sub 3}, it reaches over 40% in the orthorhombic and rhombohedral phases with an electric field of 66 kV/cm. We attribute it to possible electric-field-induced variations of the spin-dependent electronic structures, i.e., spin polarization, of the Fe via interfacial strain transfer from BaTiO{sub 3}. The contrasting results for the different phases of BaTiO{sub 3} are discussed, associated with the distinct aspects of the ferroelectric polarization switching processes in each phase.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Strong influence of periodic boundary conditions on lateral diffusion in lipid bilayer membranes

The Saffman-Delbrück hydrodynamic model for lipid-bilayer membranes is modified to account for the periodic boundary conditions commonly imposed in molecular simulations. Predicted lateral diffusion coefficients for membrane-embedded solid bodies are sensitive to box shape and converge slowly to the limit of infinite box size, raising serious doubts for the prospects of using detailed simulations to accurately predict membrane-protein diffusivities and related transport properties. Estimates for the relative error associated with periodic boundary artifacts are 50% and higher for fully atomistic models in currently feasible simulation boxes. MARTINI simulations of LacY membrane protein diffusion and LacY dimer diffusion in DPPC membranes and lipid diffusion in pure DPPC bilayers support the underlying hydrodynamic model.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Hot-carrier-induced linear drain current and threshold voltage degradation for thin layer silicon-on-insulator field P-channel lateral double-diffused metal-oxide-semiconductor

Hot-carrier-induced linear drain current (I{sub dlin}) and threshold voltage (V{sub th}) degradations for the thin layer SOI field p-channel lateral double-diffused MOS (pLDMOS) are investigated. Two competition degradation mechanisms are revealed and the hot-carrier conductance modulation model is proposed. In the channel, hot-hole injection induced positive oxide trapped charge and interface trap gives rise to the V{sub th} increasing and the channel conductance (G{sub ch}) decreasing, then reduces I{sub dlin}. In the p-drift region, hot-electron injection induced negative oxide trapped charge enhances the conductance of drift doping resistance (G{sub d}), and then increases I{sub dlin}. Consequently, the eventual I{sub dlin} degradation is controlled by the competition of the two mechanisms due to conductance modulation in the both regions. Based on the model, it is explained that the measured I{sub dlin} anomalously increases while the V{sub th} is increasing with power law. The thin layer field pLDMOS exhibits more severe V{sub th} instability compared with thick SOI layer structure; as a result, it should be seriously evaluated in actual application in switching circuit.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗