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At least 595 records · Page 33

Electromagnetic levitation containerless processing of metallic materials in microgravity: rapid solidification

Space levitation processing allows researchers to conduct benchmark tests in an effort to understand the physical phenomena involved in rapid solidification processing, including alloy thermodynamics, nucleation and growth, heat and mass transfer, solid/liquid interface dynamics, macro- and microstructural evolution, and defect formation. Supported by ground-based investigations, a major thrust is to develop and refine robust computational tools based on theoretical and applied approaches. This work is accomplished in conjunction with experiments designed for precise model validation with application to a broad range of industrial processes.

42 ENGINEERING↗

Tailorable multiferroic tunnel junctions from all-van der Waals multilayer stacking

Multiferroic tunnel junctions (MFTJs) represent a class of multistate, non-volatile spintronic devices, in which electron tunnelling can be manipulated by switching long-range lattice and spin orders. In contrast to conventional oxide-based MFTJs, MFTJs constructed from two-dimensional van der Waals (vdW) crystals promise minimal defect concentration in the constituents and at interfaces, which may allow for probing intrinsic tunnelling physics and the development of high-performance devices. Here, in this study, we construct Fe 3 GeTe 2 /CuInP 2 S 6 /Fe 3 GeTe 2 all-vdW MFTJs by assembling multilayer flakes of ferromagnetic Fe 3 GeTe 2 electrodes and a ferroelectric CuInP 2 S 6 spacer. These MFTJs exhibit four non-volatile resistance states featuring sizable tunnelling magnetoresistance of ∼10 2 % and tunnelling electroresistance of ∼10 4 %. To tune the properties of the vdW MFTJ, we make use of the flexibility in material choice offered by vdW heterostructure devices; we use Fe 3 GeTe 2 /Fe 5 GeTe 2 asymmetric electrodes to boost the tunnelling electroresistance by 10 3 %, we integrate In 2 Se 3 as a ferroelectric with a smaller bandgap to enhance the ON-state current density by 10 4 % to 10 4 A cm −2 and we use Fe 3 GaTe 2 electrodes to demonstrate room temperature operation. Furthermore, when we combine the asymmetric ferromagnetic electrodes with the small-bandgap ferroelectric spacer to construct Fe 3 GeTe 2 /In 2 Se 3 /Fe 5 GeTe 2 MFTJs, we simultaneously realized tunnelling electroresistance of 10 6 % and an ON-state current density of 10 4 A cm −2 , both two orders of magnitude higher than the highest values achieved with conventional oxide-based MFTJs. In the future, our all-vdW MFTJs with the tailorability of all functional layers may make it possible to investigate fundamental aspects of interlayer tunnelling and enable the design of functional magnetoelectric nanodevices.

Xie, Ti [University of Maryland, College Park, MD ↗

Recombination and thin film properties of silicon nitride and amorphous silicon passivated c-Si following ammonia plasma exposure

Recombination at silicon nitride (SiN{sub x}) and amorphous silicon (a-Si) passivated crystalline silicon (c-Si) surfaces is shown to increase significantly following an ammonia (NH{sub 3}) plasma exposure at room temperature. The effect of plasma exposure on chemical structure, refractive index, permittivity, and electronic properties of the thin films is also investigated. It is found that the NH{sub 3} plasma exposure causes (i) an increase in the density of Si≡N{sub 3} groups in both SiN{sub x} and a-Si films, (ii) a reduction in refractive index and permittivity, (iii) an increase in the density of defects at the SiN{sub x}/c-Si interface, and (iv) a reduction in the density of positive charge in SiN{sub x}. The changes in recombination and thin film properties are likely due to an insertion of N–H radicals into the bulk of SiN{sub x} or a-Si. It is therefore important for device performance to minimize NH{sub 3} plasma exposure of SiN{sub x} or a-Si passivating films during subsequent fabrication steps.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Silicon carbide: A unique platform for metal-oxide-semiconductor physics

A sustainable energy future requires power electronics that can enable significantly higher efficiencies in the generation, distribution, and usage of electrical energy. Silicon carbide (4H-SiC) is one of the most technologically advanced wide bandgap semiconductor that can outperform conventional silicon in terms of power handling, maximum operating temperature, and power conversion efficiency in power modules. While SiC Schottky diode is a mature technology, SiC power Metal Oxide Semiconductor Field Effect Transistors are relatively novel and there is large room for performance improvement. Specifically, major initiatives are under way to improve the inversion channel mobility and gate oxide stability in order to further reduce the on-resistance and enhance the gate reliability. Both problems relate to the defects near the SiO{sub 2}/SiC interface, which have been the focus of intensive studies for more than a decade. Here we review research on the SiC MOS physics and technology, including its brief history, the state-of-art, and the latest progress in this field. We focus on the two main scientific problems, namely, low channel mobility and bias temperature instability. The possible mechanisms behind these issues are discussed at the device physics level as well as the atomic scale, with the support of published physical analysis and theoretical studies results. Some of the most exciting recent progress in interface engineering for improving the channel mobility and fundamental understanding of channel transport is reviewed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Cavity evolution at grain boundaries as a function of radiation damage and thermal conditions in nanocrystalline nickel

Enhanced radiation tolerance of nanostructured metals is attributed to the high density of interfaces that can absorb radiation-induced defects. Here, cavity evolution mechanisms during cascade damage, helium implantation, and annealing of nanocrystalline nickel are characterized via in situ transmission electron microscopy (TEM). Films subjected to self-ion irradiation followed by helium implantation developed evenly distributed cavity structures, whereas films exposed in the reversed order developed cavities preferentially distributed along grain boundaries. Post-irradiation annealing and orientation mapping demonstrated uniform cavity growth in the nanocrystalline structure, and cavities spanning multiple grains. Furthermore, these mechanisms suggest limited ability to reduce swelling, despite the stability of the nanostructure.

36 MATERIALS SCIENCE↗

Collaborative R&D with First Solar on Understanding Performance Limitations in CdTe (Project 1 "CdTe" - Mods 0-10, 13, 14-A1, 17)

This CRADA involves analyses on a variety of CdTe and CdTe-PV related materials, test structures, and solar cells produced at FSLR or NREL. Single-crystal (sx) material will be primarily MBE grown and provided by FSLR. Joint activities are focused on establishing the appropriate quality metrics as a basis for high performing sx devices and to study the dopability of the material. Polycrystalline (px) materials will be provided by NREL, FSLR, or fabricated jointly. Px activities are focused on the characterization of performance limiting mechanisms including bulk defects, grain boundaries, and the hetero-interface. A combination of growth, characterization, and theory will be applied. Analysis will include techniques that are well established in CdTe research at NREL (e.g., LIV/DIV/CV, AS/DLTS, LTPL, TRPL) as well as techniques that have not been widely applied to the PV part of CdTe technology (e.g., PCD, CL, uPL, SE).

14 SOLAR ENERGY↗

Technical report Letter: RAFM, ODS steels and MMLC for Nuclear energy application

The lifetime, thermodynamic efficiency, safety and economic viability of new generation fission and fusion reactor concepts can largely be tied to the mechanical performance and stability of structural alloys under extreme environments. In this context, engineered nano materials could have broad-reaching impact on the future of advanced nuclear fuel-cycle and reactors. These systems are characterized by a large number density of interfaces which are efficient sinks for point defects and moderately biased; therefore limiting the deleterious effects of irradiation. Broadly, nuclear nano-technology deals with the use of the latest engineered-nanomaterials for improving the nuclear power performances and safety in all areas of nuclear energy production to bring new generations of nuclear power units. New advanced fuel assembly designs also have implications for securities and safeguards. To support the readiness for potential future license applications, an understanding of the technologies that would enable new reactor designs in the areas of component performance and domestic safeguards is necessary. This technical report letter work explores the technical issues and potential regulatory considerations associated with developing and adopting fuel claddings made of advanced nano- materials. Specifically three classes of nanomaterials are considered: (i) reduced activation ferritic/martensitic (RAFM) steels, (ii)oxide dispersed steels (ODS) and (iii) multi-metallic layered composites (MMLC).

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

The Influence of Grain Boundaries on Radiation-Induced Point Defect Production in Materials: A Review of Atomistic Studies

Radiation-induced defects cause severe degradation of materials properties during irradiation that can ultimately cause the material to fail. Consequences of these defects include swelling, embrittlement, and undesirable phase transformations. Nanocrystalline materials, which contain a high density of grain boundaries, have demonstrated enhanced radiation tolerance compared to large grain counterparts under certain conditions. This is because, as has long been recognized, grain boundaries can serve as defect sinks for absorbing and annihilating radiation-induced defects. Increasingly, researchers have examined how grain boundaries influence the direct production of defects during collision cascade, the origin of the radiation-induced defects. In this review article, we analyze the computational studies in this area that have been performed during the past two decades. These studies examine defect production near grain boundaries in metallic, ionic, and covalent systems. It is found that, in most systems, grain boundaries absorb more interstitials than vacancies during the defect production stage. While this is generically true of most boundaries, the detailed interaction between defects and grain boundaries does depend on boundary atomic structure, the stress state near the boundary, cascade-boundary separation, and materials properties. Furthermore, the defect distribution near boundaries is qualitatively different from that in single crystals, with the former often exhibiting larger vacancy clusters and smaller interstitial clusters than the latter. Finally, grain boundaries that are damaged after cascades have occurred exhibit different interaction behavior with defects than their pristine counterparts. Together, these atomistic simulation results provide useful insight for both developing higher-level modeling of defect evolution at long timescales and how interfaces influence radiation damage evolution.

36 MATERIALS SCIENCE↗

Surface functionalization of metal organic frameworks for mixed matrix membranes

Mixed Matrix Membrane (MMM) are composite membranes for gas separation and comprising a quantity of inorganic filler particles, in particular metal organic framework (MOF), dispersed throughout a polymer matrix comprising one or more polymers. This disclosure is directed to MOF functionalized through addition of a pendant functional group to the MOF, in order to improve interaction with a surrounding polymer matrix in a MMM. The improved interaction aids in avoiding defects in the MMM due to incompatible interfaces between the polymer matrix and the MOF particle, in turn increasing the mechanical and gas separation properties of the MMM. The disclosure is also directed to a MMM incorporating the surface functionalized MOF.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Multi-scale modeling of the electric field assisted sintering process

The electric field assisted sintering (EFAS) process involves tightly coupled physics that influence microstructural evolution in the particles being compacted. It is also an inherently multi-scale phenomenon, with the microstructure of the compact influencing the subsequent engineering-scale response of the sintering system. To improve understanding of how processing parameters influence microstructural evolution, we have developed a multi-scale modeling approach that couples a continuum-level model of the sintering system with a phase-field model for microstructural evolution of particles within the compact. The phase-field model couples the effect of chemical and electrical driving forces on microstructural evolution and includes the effect of charged defect segregation to surfaces and grain boundaries; this segregation leads to enhanced defect transport and heat generation at these interfaces in response to applied electric field. The effect of enhanced heat generation on particle neck growth and the influence of microstructural evolution on the engineering-scale model are demonstrated.

36 MATERIALS SCIENCE↗

Multi-scale modeling of the electric field assisted sintering process

The electric field assisted sintering (EFAS) process involves tightly coupled physics that influence microstructural evolution in the particles being compacted. It is also an inherently multi-scale phenomenon, with the microstructure of the compact influencing the subsequent engineering-scale response of the sintering system. To improve understanding of how processing parameters influence microstructural evolution, we have developed a multi-scale modeling approach that couples a continuum-level model of the sintering system with a phase-field model for microstructural evolution of particles within the compact. The phase-field model couples the effect of chemical and electrical driving forces on microstructural evolution and includes the effect of charged defect segregation to surfaces and grain boundaries; this segregation leads to enhanced defect transport and heat generation at these interfaces in response to applied electric field. The effect of enhanced heat generation on particle neck growth and the influence of microstructural evolution on the engineering-scale model are demonstrated.

36 - MATERIALS SCIENCE↗

Towards monomaterial p-n junctions: Single-step fabrication of tin oxide films and their non-destructive characterisation by angle-dependent X-ray photoelectron spectroscopy

The application of a non-destructive method for characterization of electronic structure of an ultra-thin SnO{sub 1<x<2} layer synthesized by spin coating on Si wafers was demonstrated. Utilizing angle dependent XPS, we quantified stoichiometry changes inside the SnO{sub 1<x<2} layers of thickness comparable with the electron attenuation length. The O/Sn concentration varied from 1.25 near the SnO{sub x} surface to 1.10 near the substrate/overlayer interface. Deviations from ideal stoichiometry are caused by defects, and defect levels affect the band structure of the SnO{sub x} layers. By investigation of the valence band region, followed by main core level position tracking, changes of electronic parameters like energy levels shift were identified. The results indicated a downward energy levels shift by 0.45 eV in SnO{sub x} layers at the SiO{sub 2}/SnO{sub x} interface. In combination with the detected upward energy levels shift in the substrate's electronic structure, these results suggest a negative charge displacement across the SiO{sub 2} layer. As a consequence, there is a significant carrier concentration gradient in the layer, from a nearly insulating oxide at the SnO{sub x} surface to a semiconducting one at the bottom of the SnO{sub x} film. The results showed that the application of a simple and cost-effective method allows tuning the materials' properties towards the one-step fabrication of materials with ambipolar doping.

36 MATERIALS SCIENCE↗

Charge trapping properties of Ge nanocrystals grown via solid-state dewetting

In the present work, we report on the charge trapping properties of Germanium Nanocrystals (Ge NCs) self assembled on SiO 2 thin layer for promising applications in next-generation non volatile memory by the means of Deep Level Transient Spectroscopy (DLTS) and high frequency C-V method. The Ge NCs were grown via dewetting phenomenon at solid state by Ultra-High Vacuum (UHV) annealing and passivated with silicon before SiO 2 capping. The role of the surface passivation is to reduce the electrical defect density at the Ge NCs-SiO 2 interface. The presence of the Ge NCs in the oxide of the MOS capacitors strongly affects the C-V characteristics and increases the accumulation capacitance, causes a negative flat band voltage (VFB) shift. The DLTS has been used to study the individual Ge NCs as a single point deep level defect in the oxide. DLTS reveals two main features: the first electron traps around 255 K could correspond to dangling bonds at the Si/SiO2 interface and the second, at high-temperature (>300 K) response, could be originated from minority carrier generation in Ge NCs.

36 MATERIALS SCIENCE↗

Point contacts at the copper-indium-gallium-selenide interface—A theoretical outlook

For a long time, it has been assumed that recombination in the space-charge region of copper-indium-gallium-selenide (CIGS) is dominant, at least in high efficiency solar cells with low band gap. The recent developments like potassium fluoride post deposition treatment and point-contact junction may call this into question. In this work, a theoretical outlook is made using three-dimensional simulations to investigate the effect of point-contact openings through a passivation layer on CIGS solar cell performance. A large set of solar cells is modeled under different scenarios for the charged defect levels and density, radius of the openings, interface quality, and conduction band offset. The positive surface charge created by the passivation layer induces band bending and this influences the contact (CdS) properties, making it beneficial for the open circuit voltage and efficiency, and the effect is even more pronounced when coverage area is more than 95%, and also makes a positive impact on the device performance, even in the presence of a spike at CIGS/CdS heterojunction.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Graphene–Titanium Interfaces from Molecular Dynamics Simulations

Unraveling the physical and chemical properties of graphene–metal contacts is a key step toward the development of graphitic electronic nanodevices. Although many studies have revealed the way that various metals interact with graphene, few have described the structure and behavior of large pieces of graphene–metal nanostructures under different conditions. In this paper, we present the first classical molecular dynamics study of graphene–titanium (G–Ti) structures, with and without substrates. Physical and chemical properties of equilibrium structures of G–Ti interfaces with different amounts of titanium coverage are investigated. Adhesion of Ti films on graphene is shown to be enhanced by the vacancies in graphene or the electrostatic influence of substrates. The dynamics of pristine G–Ti structures at different temperatures on planar and nonplanar substrates are investigated, and the results show that G–Ti interfaces are thermally stable, that is, not prone to any reaction toward the formation of titanium carbide.

36 MATERIALS SCIENCE↗

The Challenges of Modeling Defect Behavior and Plasticity across Spatial and Temporal Scales: A Case Study of Metal Bilayer Impact

Atomistic molecular dynamics (MD) and a microstructural dislocation density-based crystalline plasticity (DCP) framework were used together across time scales varying from picoseconds to nanoseconds and length scales spanning from angstroms to micrometers to model a buried copper–nickel interface subjected to high strain rates. The nucleation and evolution of defects, such as dislocations and stacking faults, as well as large inelastic strain accumulations and wave-induced stress reflections were physically represented in both approaches. Both methods showed similar qualitative behavior, such as defects originating along the impactor edges, a dominance of Shockley partial dislocations, and non-continuous dislocation distributions across the buried interface. The favorable comparison between methods justifies assumptions used in both, to model phenomena, such as the nucleation and interactions of single defects and partials with reflected tensile waves, based on MD predictions, which are consistent with the evolution of perfect and partial dislocation densities as predicted by DCP. This substantiates how the nanoscale as modeled by MD is representative of microstructural behavior as modeled by DCP.

36 MATERIALS SCIENCE↗

Creation and Analysis of Atomic Structures for CdTe Bi-crystal Interfaces by the Grain Boundary Genie

Grain boundaries (GB) in poly-CdTe solar cells play an important role in species diffusion, segregation, defect formation, and carrier recombination. While the creation of specific high-symmetry interfaces can be straight forward, the creation of general GB structures in many material systems is difficult if periodic boundary conditions are to be enforced. Here we describe a novel algorithm and implementation to generate initial general GB structures for CdTe in an automated way, and we investigate some of these structures using density functional theory (DFT). Example structures include those with bi-crystals already fabricated for comparison, and those planning to be investigated in the future.

Buurma, Christopher↗

Localized modes in optics of photonic liquid crystals with local anisotropy of absorption

The localized optical modes in spiral photonic liquid crystals are theoretically studied for the certainty at the example of chiral liquid crystals (CLCs) for the case of CLC with an anisotropic local absorption. The model adopted here (absence of dielectric interfaces in the structures under investigation) makes it possible to get rid of mixing of polarizations on the surfaces of the CLC layer and of the defect structure and to reduce the corresponding equations to only the equations for light with polarization diffracting in the CLC. The dispersion equations determining connection of the edge mode (EM) and defect mode (DM) frequencies with the CLC layer parameters (anisotropy of local absorption, CLC order parameter) and other parameters of the DMS are obtained. Analytic expressions for the transmission and reflection coefficients of CLC layer and DMS for the case of CLC with an anisotropic local absorption are presented and analyzed. It is shown that the CLC layers with locally anisotropic absorption reduce the EM and DM lifetimes (and increase the lasing threshold) in the way different from the case of CLC with an isotropic local absorption. Due to the Borrmann effect revealing of which is different at the opposite stop-band edges in the case of CLC layers with an anisotropic local absorption the EM life-times for the EM frequencies at the opposite stop-bands edges may be significantly different. The options of experimental observations of the theoretically revealed phenomena are briefly discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗