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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Magnetic anisotropy and GGG substrate stray field in YIG films down to millikelvin temperatures

Abstract Quantum magnonics investigates the quantum-mechanical properties of magnons, such as quantum coherence or entanglement for solid-state quantum information technologies at the nanoscale. The most promising material for quantum magnonics is the ferrimagnetic yttrium iron garnet (YIG), which hosts magnons with the longest lifetimes. YIG films of the highest quality are grown on a paramagnetic gadolinium gallium garnet (GGG) substrate. The literature has reported that ferromagnetic resonance (FMR) frequencies of YIG/GGG decrease at temperatures below 50 K despite the increase in YIG magnetization. We investigated a 97 nm-thick YIG film grown on 500 μm-thick GGG substrate through a series of experiments conducted at temperatures as low as 30 mK, and using both analytical and numerical methods. Our findings suggest that the primary factor contributing to the FMR frequency shift is the stray magnetic field created by the partially magnetized GGG substrate. This stray field is antiparallel to the applied external field and is highly inhomogeneous, reaching up to 40 mT in the center of the sample. At temperatures below 500 mK, the GGG field exhibits a saturation that cannot be described by the standard Brillouin function for a paramagnet. Including the calculated GGG field in the analysis of the FMR frequency versus temperature dependence allowed the determination of the cubic and uniaxial anisotropies. We find that the total crystallographic anisotropy increases more than three times with the decrease in temperature down to 2 K. Our findings enable accurate predictions of the YIG/GGG magnetic systems behavior at low and ultralow millikelvin temperatures, crucial for developing quantum magnonic devices.

Serha, Rostyslav O.↗
DOE OSTI2013

Position-sensitive spectral splitting with a plasmonic nanowire on silicon chip

On-chip nanophotonics serves as the foundation for the new generation of information technology, but it is challenged by the diffraction limit of light. With the capabilities of confining light into (deep) subwavelength volumes, plasmonics makes it possible to dramatically miniaturize optical devices so as to integrate them into silicon chips. Here we demonstrate that by cascading nano-corrugation gratings with different periodicities on silver nanowires atop silicon, different colors can be spatially separated and chronologically released at different grating junctions. The released light frequency depends on the grating arrangement and corrugation periodicities. Hence the nanowire acts as a spectral splitter for sorting/ demultiplexing photons at different nano-scale positions with a ten-femtosecond-level interval. Such nanowires can be constructed further into compact 2D networks or circuits. We believe that this study provides a new and promising approach for realizing spatiotemporal-sensitive spectral splitting and optical signal processing on nanoscales, and for general integration of nanophotonics with microelectronics.

NANOPHOTONICS AND PLASMONICS↗
DOE OSTI2017

Ferroelectric symmetry-protected multibit memory cell

Here, the tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limitations. Here we propose ferroelectric multibit cells (FMBC) utilizing the ability of multiaxial ferroelectric materials to pin the polarization at a sequence of the multistable states. Employing the catastrophe theory principles we show that these states are symmetry-protected against the information loss and thus realize novel topologically-controlled access memory (TAM). Our findings enable developing a platform for the emergent many-valued non-Boolean information technology and target challenges posed by needs of quantum and neuromorphic computing.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Spin trapping and flipping in FeCO through relativistic electron dynamics

Transition metal compounds are very versatile, and their characteristics can differ profoundly depending on their electronic structure. Compounds in which a spin transition from a low-spin to a high-spin state can be achieved through means of an optical excitation are particularly intriguing, as a controlled spin–flip opens promising avenues in areas such as sensing, information technology, molecular switches and energy technology. The fundamental mechanisms in spin crossover and spin transitions remain unanswered, due to the complexity of electronic structure and interplay of relativistic effects. Presented here is a new approach that allows the first direct study of spin flip dynamics through a mapping of spin-mixed to spin-pure states. The method is applied to FeCO and addresses the spin–flip dynamics during a spin transition. Finally, wave packets that combine different spin states are generated through optical excitation and relevant mechanisms in optically triggered spin transitions are discussed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Significantly enhanced magnetoresistance in monolayer WTe 2 via heterojunction engineering: a first-principles study

The large non-saturating magnetoresistance (MR) of bulk WTe 2 is known to be greatly reduced in thin films with decreasing thickness. In this study, based on first-principles calculations, we demonstrate that 2D WTe 2 bonded to graphene, through a WTe 2 /graphene van der Waals (vdW) heterojunction, can exhibit a significantly enhanced MR, which can be even larger than that of bulk WTe 2 . Moreover, the MR shows a strong stacking-orientation-dependent behavior, which facilitates a tunable MR effect. We report our findings illustrate a new route to enhancing the MR of WTe 2 and other 2D semimetals via heterojunction engineering, which is useful for a range of applications in information technology.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

First-principles studies of strongly correlated states in defect spin qubits in diamond

Using a recently developed quantum embedding theory, we present first-principles calculations of strongly correlated states of spin defects in diamond. Using this theory, effective Hamiltonians are constructed, which can be solved by classical and quantum computers; the latter promise a much more favorable scaling as a function of system size than the former. In particular, we report a study on the neutral group-IV vacancy complexes in diamond, and we discuss their strongly correlated spin-singlet and spin-triplet excited states. Finally, our results provide valuable predictions for experiments aimed at optical manipulation of these defects for quantum information technology applications.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2023

Anti-Arrhenius behavior of electron transfer reactions in molecular dimers

Rates of chemical reactions typically accelerate as the temperature rises, following the Arrhenius law. However, electron transfer reactions may exhibit weak temperature dependence or counterintuitive behavior, known as anti-Arrhenius behavior, wherein reaction rates decrease as temperature increases. Solvent reorganization energy and torsion-induced changes in electronic couplings could contribute to this unusual behavior, but how each contributes to the overall temperature dependence is unclear. One can decelerate the charge recombination process in photogenerated radical pairs or charge-separated states by harnessing this often-overlooked phenomenon. This means that we could achieve long-lived radical pairs without relying on conventional cooling. Using a series of homo molecular dimers, we showed that the degree of torsional hindrance dictates temperature-dependent torsion-induced changes in electronic coupling and, therefore, charge recombination rates. The overall temperature dependence is controlled by how changes in electronic coupling and the temperature-dependent solvent reorganization energy contribute to the rates of charge recombination. Our findings pave the way for rationally designing molecules that exhibit anti-Arrhenius behavior to slow down charge recombination, opening possibilities for applications in energy-related and quantum information technologies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Control of the magnetic in-plane anisotropy in off-stoichiometric NiMnSb

NiMnSb is a ferromagnetic half-metal which, because of its rich anisotropy and very low Gilbert damping, is a promising candidate for applications in information technologies. We have investigated the in-plane anisotropy properties of thin, molecular beam epitaxy-grown NiMnSb films as a function of their Mn concentration. Using ferromagnetic resonance to determine the uniaxial and four-fold anisotropy fields, (2K{sub U})/(M{sub s}) and (2K{sub 1})/(M{sub s}) , we find that a variation in composition can change the strength of the four-fold anisotropy by more than an order of magnitude and cause a complete 90° rotation of the uniaxial anisotropy. This provides valuable flexibility in designing new device geometries.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

In-situ weak-beam and polarization control of multidimensional laser sidebands for ultrafast optical switching

All-optical switching has myriad applications in optoelectronics, optical communications, and quantum information technology. To achieve ultrafast optical switching in a compact yet versatile setup, we demonstrate distinct sets of two-dimensional (2D) broadband up-converted multicolor arrays (BUMAs) in a thin type-I β-barium-borate crystal with two noncollinear near-IR femtosecond pulses at various phase-matching conditions. The unique interaction mechanism is revealed as quadratic spatial solitons (QSSs)-coupled cascaded four-wave mixing (CFWM), corroborated by numerical calculations of the governing phase-matching conditions. Broad and continuous spectral-spatial tunability of the 2D BUMAs are achieved by varying the time delay between the two incident pulses that undergo CFWM interaction, rooted in the chirped nature of the weak white light and the QSSs generation of the intense fundamental beam. The control of 2D BUMAs is accomplished via seeding a weak second-harmonic pulse in situ to suppress the 2D arrays with polarization dependence on the femtosecond timescale that matches the control pulse duration of ∼35 fs. A potential application is proposed on femtosecond all-optical switching in an integrated wavelength-time division multiplexing device.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Synthesis and properties of ferromagnetic nanostructures embedded within a high-quality crystalline silicon matrix via ion implantation and nanocavity assisted gettering processes

Integrating magnetic functionalities with silicon holds the promise of developing, in the most dominant semiconductor, a paradigm-shift information technology based on the manipulation and control of electron spin and charge. Here, we demonstrate an ion implantation approach enabling the synthesis of a ferromagnetic layer within a defect free Si environment by exploiting an additional implant of hydrogen in a region deep below the metal implanted layer. Upon post-implantation annealing, nanocavities created within the H-implanted region act as trapping sites for gettering the implanted metal species, resulting in the formation of metal nanoparticles in a Si region of excellent crystal quality. This is exemplified by the synthesis of magnetic nickel nanoparticles in Si implanted with H{sup +} (range: ∼850 nm; dose: 1.5 × 10{sup 16 }cm{sup −2}) and Ni{sup +} (range: ∼60 nm; dose: 2 × 10{sup 15 }cm{sup −2}). Following annealing, the H implanted regions populated with Ni nanoparticles of size (∼10–25 nm) and density (∼10{sup 11}/cm{sup 2}) typical of those achievable via conventional thin film deposition and growth techniques. In particular, a maximum amount of gettered Ni atoms occurs after annealing at 900 °C, yielding strong ferromagnetism persisting even at room temperature, as well as fully recovered crystalline Si environments adjacent to these Ni nanoparticles. Furthermore, Ni nanoparticles capsulated within a high-quality crystalline Si layer exhibit a very high magnetic switching energy barrier of ∼0.86 eV, an increase by about one order of magnitude as compared to their counterparts on a Si surface or in a highly defective Si environment.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Development of models for exchange of electronic documents

The report presents a model for exchange of electronic documents between different government administrations. It defines electronic messages that are transmitted between them and the way that messages should be processed by software systems. The proposed approach is sufficiently general and allows use of the best applicable information technologies such as data presentation structures and communication protocols. Within the study, a simple implementation of the model is implemented and deployed in various government administrations in Republic of Bulgaria.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

In many of the publications, over 50 per year for the last five years, the Poole-Frenkel-effect (PFE) is identified or suggested as dominating current mechanism to explain measured current–electric field dependencies in metal-insulator-metal (MIM) thin film stacks. Very often, the insulating thin film is a metal oxide as this class of materials has many important applications, especially in information technology. In the overwhelming majority of the papers, the identification of the PFE as dominating current mechanism is made by the slope of the current–electric field curve in the so-called Poole-Frenkel plot, i.e., logarithm of current density, j, divided by the applied electric field, F, versus the square root of that field. This plot is suggested by the simplest current equation for the PFE, which comprises this proportionality (ln(j/F) vs. F{sup 1/2}) leading to a straight line in this plot. Only one other parameter (except natural constants) may influence this slope: the optical dielectric constant of the insulating film. In order to identify the importance of the PFE simulation studies of the current through MIM stacks with thin insulating films were performed and the current–electric field curves without and with implementation of the PFE were compared. For the simulation, an advanced current model has been used combining electronic carrier injection/ejection currents at the interfaces, described by thermionic emission, with the carrier transport in the dielectric, described by drift and diffusion of electrons and holes in a wide band gap semiconductor. Besides the applied electric field (or voltage), many other important parameters have been varied: the density of the traps (with donor- and acceptor-like behavior); the zero-field energy level of the traps within the energy gap, this energy level is changed by the PFE (also called internal Schottky effect); the thickness of the dielectric film; the permittivity of the dielectric film simulating different oxide materials; the barriers for electrons and holes at the interfaces simulating different electrode materials; the temperature. The main results and conclusions are: (1) For a single type of trap present only (donor-like or acceptor-like), none of the simulated current density curves shows the expected behavior of the PFE and in most cases within the tested parameter field the effect of PFE is negligibly small. (2) For both types of traps present (compensation) only in the case of exact compensation, the expected slope in the PF-plot was nearly found for a wider range of the applied electric field, but for a very small range of the tested parameter field because of the very restricting additional conditions: first, the quasi-fermi level of the current controlling particle (electrons or holes) has to be 0.1 to 0.5 eV closer to the respective band limit than the zero-field energy level of the respective traps and, second, the compensating trap energy level has to be shallow. The conclusion from all these results is: the observation of the PFE as dominating current mechanism in MIM stacks with thin dielectric (oxide) films (typically 30 nm) is rather improbable!.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Electronic representation of wave equation

The Taylor series method for solving differential equations represents a non-traditional way of a numerical solution. Even though this method is not much preferred in the literature, experimental calculations done at the Department of Intelligent Systems of the Faculty of Information Technology of TU Brno have verified that the accuracy and stability of the Taylor series method exceeds the currently used algorithms for numerically solving differential equations. This paper deals with solution of Telegraph equation using modelling of a series small pieces of the wire. Corresponding differential equations are solved by the Modern Taylor Series Method.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Temperature induced complementary switching in titanium oxide resistive random access memory

On the way towards high memory density and computer performance, a considerable development in energy efficiency represents the foremost aspiration in future information technology. Complementary resistive switch consists of two antiserial resistive switching memory (RRAM) elements and allows for the construction of large passive crossbar arrays by solving the sneak path problem in combination with a drastic reduction of the power consumption. Here we present a titanium oxide based complementary RRAM (CRRAM) device with Pt top and TiN bottom electrode. A subsequent post metal annealing at 400°C induces CRRAM. Forming voltage of 4.3 V is required for this device to initiate switching process. The same device also exhibiting bipolar switching at lower compliance current, Ic <50 μA. The CRRAM device have high reliabilities. Formation of intermediate titanium oxi-nitride layer is confirmed from the cross-sectional HRTEM analysis. The origin of complementary switching mechanism have been discussed with AES, HRTEM analysis and schematic diagram. This paper provides valuable data along with analysis on the origin of CRRAM for the application in nanoscale devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Observation of interacting polaronic gas behavior in Ta-doped TiO 2 thin films via terahertz time-domain spectroscopy

Transparent conductive oxides (TCOs)—materials that have the twin desirable features of high optical transmission and electrical conductivity—play an increasingly significant role in the fields of photovoltaics and information technology. As an excellent TCO, Ta-doped anatase TiO 2 shows great promise for a wide range of applications. Here, terahertz time-domain spectroscopy is used to study the complex optical conductivity $\tilde{σ}$ (ω) of the TCO—heavily Ta-doped TiO 2 thin films with different Ta-doping concentrations, in the frequency range of 0.3–2.7 THz and the temperature range of 10–300 K. Fitting the complex optical conductivity to a Drude-like behavior allows us to extract the temperature dependence of the effective mass, which suggests the existence of many-body large polarons. Moreover, the carrier scattering rate of Ta-doped TiO 2 with different carrier concentrations agrees with the interacting polaron gas theory. Our results suggest that with increasing electron density in TiO 2 , the interaction between polarons is larger and electron–phonon coupling is smaller, which is beneficial for achieving high mobility and conductivity in TiO 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2020

Room-temperature skyrmion phase in bulk Cu 2 OSeO 3 under high pressures

Significance Skyrmion materials hold great promise for information technology due to the extremely low current needed to modify the spin configurations and the small size of magnetic domains. To facilitate their application, one great challenge is to break the magnetic field–temperature phase space restriction for the skyrmion state. We found that the temperature region for the skyrmion phase in bulk Cu 2 OSeO 3 can be greatly enhanced under physical pressure, making applications more practical by the use of strained heterostructures, for example. The observation of additional structures suggests that the skyrmion state may be insensitive to the underlying crystal structure. This work will stimulate research on finding skyrmion materials with different crystal structures and retaining the room-temperature skyrmion state at ambient condition.

Deng, Liangzi↗
DOE OSTI2022

Enabling multiple intercavity polariton coherences by adding quantum confinement to cavity molecular polaritons

In this study, the “particle in a box” idea, which was broadly developed in semiconductor quantum dot research, was extended into mid-infrared (IR) cavity modes by applying lateral confinement in an optical cavity. The discrete cavity modes hybridized with molecular vibrational modes, resulting in a quartet of polariton states that can support multiple coherence states in the IR regime. We applied tailored pump pulse sequences to selectively prepare these coherences and verified the multi-coherence existence. The simulation based on Lindblad equation showed that because the quartet of polariton states resided in the same cavity, they were specifically robust toward decoherence caused by fluctuations in space. The multiple robust coherences paved the way for entangled states and coherent interactions between cavity polaritons, which would be critical for advancing polariton-based quantum information technology.

2D IR↗
DOE OSTI2022

Overview and Recommendations for Cyber Risk Assessment in Nuclear Power Plants

Digital instrumentation and control (I&C) systems are being deployed in nuclear power plants (NPPs) for both existing and advanced reactor designs. As I&C systems become more digitized to allow features like near autonomous control and remote operation, they introduce greater cyber risk to NPPs. Cyberattacks targeting industrial control systems (ICSs) are growing in both qualities and capabilities, which indicates that cybersecurity needs to be an integral part of risk assessment in the industry. Although there are some risk assessment methods in traditional information technology (IT) cybersecurity, the differences between IT and ICS cybersecurity make it infeasible to apply these risk assessment methods directly to ICSs. Some research has focused on risk assessment methods for ICSs, but few studies focus on applications to NPPs. Ideal risk frameworks for the nuclear industry are dynamic and account for system dependencies; this survey review focuses on such risk assessment methods both in and outside the nuclear field. In this article, the major challenges in cybersecurity risk assessment research are pointed out, and further research suggestions and considerations for cyber risk assessment in I&C systems are identified.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗