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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

Positron annihilation spectroscopic study of high performance semi-interpenetrating network polyimids

Semi-interpenetrating (S-IPN) network polyimids were made from different proportions of LaRC RP46 (a thermosetpolyimid) and LaRC BDTA-ODA (a thermoplastic polyimid). The ultimate goal of this networking is to improve the mechanical properties of the thermoset polyimid. Positron lifetime study was made to calculate lifetime based on second component of the life time spectra and the free volume & microvoid size. All these properties tend to decrease steadily with increasing thermoset content except at the 50 percent thermoset level where these properties show sudden drop. This result contradicts with the initial expectation that the blend properties should change gradually if it were a solid solution of thermoset (TSP) and thermoplastic (TPP) components. Thermal analyses (TMA, DSC, DMA & TGA) were run to complement the positron life time studies. The TMA and DSC studies confirm the contradiction mentioned above. Further experimentation with S-IPN polymers made at TSP/TTP content around 50/50 level are being conducted to explain this anomaly. Scanning electron microscope study of the S-IPN polyimid samples is under way in order to detect morphological differences which might help explain the phenomenon mentioned above.

Ray, Asit K.↗
NASA NTRS1996

AIN-Coated Al(2)O(3) Substrates For Electronic Circuits

Type of improved ceramic substrate for high-frequency, high-power electronic circuits combines relatively high thermal conductivity of aluminum nitride with surface smoothness of alumina. Consists of 15-micrometer layer of AIN deposited on highly polished alumina. Used for packaging millimeter-wave gallium arsenide transmitter chips, power silicon chips, and like.

Kolawa, Elzbieta↗
NASA NTRS2000

New Data on Microfossils from Shungites

Shungites are pre-cambrian (2Gya) carbon-rich, silicate rocks known from deposits in the north-western part of lake Onega, near the city of Petrozavodsk in Karelia (North from St. Petersburg, Russia). Shungites are extremely rich in carbon, with carbon accounting for 98% in vein shungites. Shungites have been found to exhibit interesting optical, ultrasonic, thermal, mechanical, electrical properties and have recently been found to contain small amounts of C60 fullerene. Shungite rocks from Karelia have a characteristic globular structure and are chemically inert and metastable. As part of our ongoing search for biomarkers in ancient terrestrial rocks that are of potential significance to Astrobiology, we have conducted Environmental and Field Emission Scanning Electron Micrographs of freshly fractured interior surfaces of Shungites. We find them to contain indigenous miocrofossils, similar to cyanobacteria known from the phosphorites of Khubsugul, Mongolia. We describe this investigation and provide ESEM and FESEM images of biomorphic microstructures that we interpret as indigenous microfossils in Shungites.

Hoover, Robert B.↗
NASA NTRS2000

2D Quantum Mechanical Study of Nanoscale MOSFETs

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density-gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions and oxide tunneling are treated on an equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. We present the results of our simulations of MIT 25, 50 and 90 nm "well-tempered" MOSFETs and compare them to those of classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. Surprisingly, the self-consistent potential profile shows lower injection barrier in the channel in quantum case. These results are qualitatively consistent with ID Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and subthreshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Svizhenko, Alexei↗
NASA NTRS2001

2D Quantum Transport Modeling in Nanoscale MOSFETs

With the onset of quantum confinement in the inversion layer in nanoscale MOSFETs, behavior of the resonant level inevitably determines all device characteristics. While most classical device simulators take quantization into account in some simplified manner, the important details of electrostatics are missing. Our work addresses this shortcoming and provides: (a) a framework to quantitatively explore device physics issues such as the source-drain and gate leakage currents, DIBL, and threshold voltage shift due to quantization, and b) a means of benchmarking quantum corrections to semiclassical models (such as density- gradient and quantum-corrected MEDICI). We have developed physical approximations and computer code capable of realistically simulating 2-D nanoscale transistors, using the non-equilibrium Green's function (NEGF) method. This is the most accurate full quantum model yet applied to 2-D device simulation. Open boundary conditions, oxide tunneling and phase-breaking scattering are treated on equal footing. Electrons in the ellipsoids of the conduction band are treated within the anisotropic effective mass approximation. Quantum simulations are focused on MIT 25, 50 and 90 nm "well- tempered" MOSFETs and compared to classical and quantum corrected models. The important feature of quantum model is smaller slope of Id-Vg curve and consequently higher threshold voltage. These results are quantitatively consistent with I D Schroedinger-Poisson calculations. The effect of gate length on gate-oxide leakage and sub-threshold current has been studied. The shorter gate length device has an order of magnitude smaller current at zero gate bias than the longer gate length device without a significant trade-off in on-current. This should be a device design consideration.

Svizhenko, Alexei↗
NASA NTRS1999

The Thermal Structure of Triton's Middle Atmosphere

The atmospheric structure of Triton in the altitude range 25-150 kilometers shows an unexpectedly steep thermal gradient of 0.26 K per kilometer above 50 kilometer altitude, with a nearly isothermal profile below. The upper part of the profile can be explained by downward conduction of heat deposited by magnetospheric electrons and solar UV. However, the atmospheric temperature below 50 kilometers is too cold for identified radiative processes to dispose of the inferred heat flux (0.0012 erg per square centimeter per second) from the upper atmosphere. This implies that either the atmosphere is not in a steady state and/or an unidentified cooling mechanism is at work in the altitude range 25-50 kilometers. When extrapolated to the surface, the inversion results yield a pressure of 19.0 sup (+1.8) sub (-1.5), mubar, about 5mubar greater than that observed by Voyager.

Elliot, J. L.↗
NASA NTRS2005

Radiation Testing and Evaluation Issues for Modern Integrated Circuits

Abstract. Changes in modern integrated circuit (IC) technologies have modified the way we approach and conduct radiation tolerance and testing of electronics. These changes include scaling of geometries, new materials, new packaging technologies, and overall speed and device complexity challenges. In this short course section, we will identify and discuss these issues as they impact radiation testing, modeling, and effects mitigation of modern integrated circuits. The focus will be on CMOS-based technologies, however, other high performance technologies will be discussed where appropriate. The effects of concern will be: Single-Event Effects (SEE) and steady state total ionizing dose (TID) IC response. However, due to the growing use of opto-electronics in space systems issues concerning displacement damage testing will also be considered. This short course section is not intended to provide detailed "how-to-test" information, but simply provide a snapshot of current challenges and some of the approaches being considered.

LaBel, Kenneth A.↗
NASA NTRS2007

Arc Testing of a Mockup Cable in a Simulated Space Radiation Environment

A mockup cable was irradiated with electrons of 25-100 keV energy in a vacuum chamber. The m'ockup cable consisted of insulated wires on a kapton substrate, overlaid with a metallized teonex shield. Voltages induced on the wires and shield by the electron beam during irradiation were monitored, and voltage changes were used, along with video, to detect arcs due to the charge built-up in the cable. The cable was also cooled with liquid nitrogen to very low temperatures, to simulate cables kept in the dark for long periods of time. Arcing was common at fluences typical of long space missions. Occasionally an arc would occur some time after the electron beam was turned off. The conductivity of the wires and shield was monitored as a function of temperature, and behaved as expected, with lower conductivities at lower temperatures. Arcs from the wires and shield to ground and from the wires to the shield were measured. Sympathetic arcs were also seen, wherein an arc from the shield to ground or from the wires to ground was followed in a short period of time by another arc of a different type. Implications of these results for real cables on long space missions will be discussed, and recommendations given for arc mitigation.

Ferguson, D. C.↗
NASA NTRS1980

Method of making conductive elastomer connector

An electrical connector in which conductive rubber rods are mounted in a metal substrate covered by a nonconductive layer. The rods extend above and below the upper and lower surfaces, respectively, of the substrate for electrically interconnecting conductive traces on a pair of electronic components. A method for making the connector is disclosed.

Alonso, Oscar↗
NASA NTRS2014

IAA Space Exploration Conference

The NASA Human Health and Performance Center (NHHPC) was established in October 2010 to facilitate development of partnerships and collaborative projects in human health and performance with a focus on Earthspace benefits. The membership, which now stands at over 135 members from around the world, was developed to span the government, academic, industry and non-profit sectors, making the NHHPC a global convener in human health and performance. International members include organizations from Germany, the United Kingdom, Spain, Japan, South Africa, and India. The virtual center facilitates sharing of best practices and development of collaborative opportunities through a variety of vehicles, including annual in-person workshops, Innovation Lecture Series and Member to Member Connect webcasts, quarterly electronic newsletters, web postings, and electronic member announcements. The NHHPC has conducted four workshops leading to several collaborative projects between members, with the most recent workshop held focusing on new organizational business models for accelerating innovation. This short paper will discuss how the NHHPC facilitates partnerships and the collaborative research and technology developments projects with applications to both the NASA mission and life on Earth.

Davis, Jeffrey R.↗
NASA NTRS2014

Preparation and Integration of ALHAT Precision Landing Technology for Morpheus Flight Testing

The Autonomous precision Landing and Hazard Avoidance Technology (ALHAT) project has developed a suite of prototype sensors for enabling autonomous and safe precision land- ing of robotic or crewed vehicles on solid solar bodies under varying terrain lighting condi- tions. The sensors include a Lidar-based Hazard Detection System (HDS), a multipurpose Navigation Doppler Lidar (NDL), and a long-range Laser Altimeter (LAlt). Preparation for terrestrial ight testing of ALHAT onboard the Morpheus free- ying, rocket-propelled ight test vehicle has been in progress since 2012, with ight tests over a lunar-like ter- rain eld occurring in Spring 2014. Signi cant work e orts within both the ALHAT and Morpheus projects has been required in the preparation of the sensors, vehicle, and test facilities for interfacing, integrating and verifying overall system performance to ensure readiness for ight testing. The ALHAT sensors have undergone numerous stand-alone sensor tests, simulations, and calibrations, along with integrated-system tests in special- ized gantries, trucks, helicopters and xed-wing aircraft. A lunar-like terrain environment was constructed for ALHAT system testing during Morpheus ights, and vibration and thermal testing of the ALHAT sensors was performed based on Morpheus ights prior to ALHAT integration. High- delity simulations were implemented to gain insight into integrated ALHAT sensors and Morpheus GN&C system performance, and command and telemetry interfacing and functional testing was conducted once the ALHAT sensors and electronics were integrated onto Morpheus. This paper captures some of the details and lessons learned in the planning, preparation and integration of the individual ALHAT sen- sors, the vehicle, and the test environment that led up to the joint ight tests.

Carson, John M., III↗
NASA NTRS2014

Systems and Methods of Laser Texturing of Material Surfaces and Their Applications

The surface of a material is textured and by exposing the surface to pulses from an ultrafast laser. The laser treatment causes pillars to form on the treated surface. These pillars provide for greater light absorption. Texturing and crystallization can be carried out as a single step process. The crystallization of the material provides for higher electric conductivity and changes in optical and electronic properties of the material. The method may be performed in vacuum or a gaseous environment. The gaseous environment may aid in texturing and/or modifying physical and chemical properties of the surfaces. This method may be used on various material surfaces, such as semiconductors, metals and their alloys, ceramics, polymers, glasses, composites, as well as crystalline, nanocrystalline, polycrystalline, microcrystalline, and amorphous phases.

Gupta, Mool C.↗
NASA NTRS1998

A Review of the Suppression of Secondary Electron Emission from the Electrodes of Multistage Collectors

A review is presented of more than 20 years of research conducted at NASA Lewis Research Center on the suppression of secondary electron emission (SEE) for the enhancement of the efficiency of vacuum electron devices with multistage depressed collectors. This paper will include a description of measurement techniques, data from measurements of SEE on a variety of materials of engineering interest and methods of surface treatment for the suppression of SEE. In the course of this work the lowest secondary electron yield ever reported was achieved for ion textured graphite, and, in a parallel line of research, the highest yield was obtained for chemical vapor deposited thin diamond films.

Dayton, James A., Jr.↗
NASA NTRS2012

Graphene Transparent Conductive Electrodes for Next- Generation Microshutter Arrays

Graphene is a single atomic layer of graphite. It is optically transparent and has high electron mobility, and thus has great potential to make transparent conductive electrodes. This invention contributes towards the development of graphene transparent conductive electrodes for next-generation microshutter arrays. The original design for the electrodes of the next generation of microshutters uses indium-tin-oxide (ITO) as the electrode material. ITO is widely used in NASA flight missions. The optical transparency of ITO is limited, and the material is brittle. Also, ITO has been getting more expensive in recent years. The objective of the invention is to develop a graphene transparent conductive electrode that will replace ITO. An exfoliation procedure was developed to make graphene out of graphite crystals. In addition, large areas of single-layer graphene were produced using low-pressure chemical vapor deposition (LPCVD) with high optical transparency. A special graphene transport procedure was developed for transferring graphene from copper substrates to arbitrary substrates. The concept is to grow large-size graphene sheets using the LPCVD system through chemical reaction, transfer the graphene film to a substrate, dope graphene to reduce the sheet resistance, and pattern the film to the dimension of the electrodes in the microshutter array. Graphene transparent conductive electrodes are expected to have a transparency of 97.7%. This covers the electromagnetic spectrum from UV to IR. In comparison, ITO electrodes currently used in microshutter arrays have 85% transparency in mid-IR, and suffer from dramatic transparency drop at a wavelength of near-IR or shorter. Thus, graphene also has potential application as transparent conductive electrodes for Schottky photodiodes in the UV region.

Li, Mary↗
NASA NTRS1972

The stable auroral red arc of October 31 - November 1, 1968 and its interaction with the neutral atmosphere

Satellite observations of electron temperature and the topside electron density structure are used to calculate the red arc according to the thermal conduction model. In this model, energy from the magnetosphere flows in the electron gas along geomagnetic field lines into the ionosphere. This energy heats the ambient F-region electrons sufficiently to excite the oxygen atoms to the O I(1D) level by collisional impact giving rise to the 6300 A emission characteristic of the arc. For the 31 October/1 November 1968 red arc, the calculated emission rate, geographical position, and horizontal extent of the red arc are in agreement with the photometric data obtained by airglow observatories. Almost all of the energy conducted into the red arc is ultimately transferred to the neutral gas through elastic and inelastic collisions. This energy drives a large thermal cell and the circulation extends the influence of the arc thousands of kilometers beyond the region of direct heat input. The calculated neutral gas temperature response to electron heating within the arc is small.

Roble, R. G.↗
NASA NTRS1998

Fine Structure in the Secondary Electron Emission Peak for Diamond Crystal with (100) Negative Electron Affinity Surface

A fine structure was discovered in the low-energy peak of the secondary electron emission spectra of the diamond surface with negative electron affinity. We studied this structure for the (100) surface of the natural type-IIb diamond crystal. We have found that the low-energy peak consists of a total of four maxima. The relative energy positions of three of them could be related to the electron energy minima near the bottom of the conduction band. The fourth peak, having the lowest energy, was attributed to the breakup of the bulk exciton at the surface during the process of secondary electron emission.

Asnin, V. M.↗
NASA NTRS1977

Carrier generation, recombination, trapping, and transport in semiconductors with position-dependent composition

The spatial variation of the chemical composition of a semiconductor modifies the ideal one-electron energy band model as well as the Shockley equations for carrier recombination and transport in two important ways. The random component of the spatial variation introduces localized states in the energy gap by perturbing the band states. The nonrandom component gives rise to the position dependences of the conduction and valence band edges or the electron affinity and the energy gap. This paper gives the modifications of the Shockley equations from these two effects as well as an example of the steady-state recombination rate from distributed gap states in junction solar cells

Sah, C.-T.↗