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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Crystal Growth of ZnSe and Related Ternary Compound Semiconductors by Vapor Transport

Interest in optical devices which can operate in the visible spectrum has motivated research interest in the II-VI wide band gap semiconductor materials. The recent challenge for semiconductor opto-electronics is the development of a laser which can operate at short visible wavelengths, In the past several years, major advances in thin film technology such as molecular beam epitaxy and metal organic chemical vapor deposition have demonstrated the applicability of II-VI materials to important devices such as light-emitting diodes, lasers, and ultraviolet detectors.The demonstration of its optical bistable properties in bulk and thin film forms also make ZnSe a possible candidate material for the building blocks of a digital optical computer. Despite this, developments in the crystal growth of bulk II-VI semiconductor materials has not advanced far enough to provide the low price, high quality substrates needed for the thin film growth technology. The electrical and optical properties of semiconductor materials depend on the native point defects, (the deviation from stoichiometry), and the impurity or dopant distribution. To date, the bulk growth of ZnSe substrates has been plagued with problems related to defects such as non-uniform distributions of native defects, impurities and dopants, lattice strain, dislocations, grain boundaries, and second phase inclusions which greatly effect the device performance. In the bulk crystal growth of some technologically important semiconductors, such as ZnTe, CdS, ZnSe and ZnS, vapor growth techniques have significant advantages over melt growth techniques due to the high melting points of these materials.

Su, Ching-Hua↗
NASA NTRS2011

CMOS Imager Has Better Cross-Talk and Full-Well Performance

A complementary metal oxide/semiconductor (CMOS) image detector now undergoing development is designed to exhibit less cross-talk and greater full-well capacity than do prior CMOS image detectors of the same type. Imagers of the type in question are designed to operate from low-voltage power supplies and are fabricated by processes that yield device features having dimensions in the deep submicron range. Because of the use of low supply potentials, maximum internal electric fields and depletion widths are correspondingly limited. In turn, these limitations are responsible for increases in cross-talk and decreases in charge-handling capacities. Moreover, for small pixels, lateral depletion cannot be extended. These adverse effects are even more accentuated in a back-illuminated CMOS imager, in which photogenerated charge carriers must travel across the entire thickness of the device. The figure shows a partial cross section of the structure in the device layer of the present developmental CMOS imager. (In a practical imager, the device layer would sit atop either a heavily doped silicon substrate or a thin silicon oxide layer on a silicon substrate, not shown here.) The imager chip is divided into two areas: area C, which contains readout circuits and other electronic circuits; and area I, which contains the imaging (photodetector and photogenerated-charge-collecting) pixel structures. Areas C and I are electrically isolated from each other by means of a trench filled with silicon oxide. The electrical isolation between areas C and I makes it possible to apply different supply potentials to these areas, thereby enabling optimization of the supply potential and associated design features for each area. More specifically, metal oxide semiconductor field-effect transistors (MOSFETs) that are typically included in CMOS imagers now reside in area C and can remain unchanged from established designs and operated at supply potentials prescribed for those designs, while the dopings and the lower supply potentials in area I can be tailored to optimize imager performance. In area I, the device layer includes an n+ -doped silicon layer on which is grown an n-doped silicon layer. A p-doped silicon layer is grown on top of the n -doped layer. The total imaging device thickness is the sum of the thickness of the n+, n, and p layers. A pixel photodiode is formed between a surface n+ implant, a p implant underneath it, the aforementioned p layer, and the n and n+ layers. Adjacent to the diode is a gate for transferring photogenerated charges out of the photodiode and into a floating diffusion formed by an implanted p+ layer on an implanted n-doped region. Metal contact pads are added to the back-side for providing back-side bias.

Pain, Bedabrata↗
NASA NTRS1995

Retrieval of water vapor mixing ratios from a laser-based sensor

Langley Research Center has developed a novel external path sensor which monitors water vapor along an optical path between an airplane window and reflective material on the plane's engine. An infrared tunable diode laser is wavelength modulated across a water vapor absorption line at a frequency f. The 2f and DC signals are measured by a detector mounted adjacent to the laser. The 2f/DC ratio depends on the amount of wavelength modulation, the water vapor absorption line being observed, and the temperature, pressure, and water vapor content of the atmosphere. The present work concerns efforts to quantify the contributions of these factors and to derive a method for extracting the water vapor mixing ratio from the measurements. A 3 m cell was fabricated in order to perform laboratory tests of the sensor. Measurements of 2f/DC were made for a series of pressures and modulation amplitudes. During my 1994 faculty fellowship, a computer program was created which allowed 2f/DC to be calculated for any combination of the variables which effect it. This code was used to generate 2f/DC values for the conditions measured in the laboratory. The experimental and theoretical values agreed to within a few percent. As a result, the laser modulation amplitude can now be set in the field by comparing the response of the instrument to the calculated response as a function of modulation amplitude. Once the validity of the computer code was established, it was used to investigate possible candidate absorption lines. 2f/DC values were calculated for pressures, temperatures, and water vapor mixing ratios expected to be encountered in future missions. The results have been incorporated into a database which will be used to select the best line for a particular mission. The database will also be used to select a retrieval technique. For examples under some circumstances there is little temperature dependence in 2f/DC so temperature can be neglected. In other cases, there is a dependence with temperature for a particular pressure, requiring a more complicated retrieval algorithm. Future experimental work is necessary to test agreement with the theoretical values over a range of temperatures and mixing ratios. Additionally, retrieval algorithms for forthcoming missions must be incorporated into the software package which controls the instrument.

Tucker, George F.↗
NASA NTRS1993

Accuracy of quantum sensors measuring yield photon flux and photosynthetic photon flux

Photosynthesis is fundamentally driven by photon flux rather than energy flux, but not all absorbed photons yield equal amounts of photosynthesis. Thus, two measures of photosynthetically active radiation have emerged: photosynthetic photon flux (PPF), which values all photons from 400 to 700 nm equally, and yield photon flux (YPF), which weights photons in the range from 360 to 760 nm according to plant photosynthetic response. We selected seven common radiation sources and measured YPF and PPF from each source with a spectroradiometer. We then compared these measurements with measurements from three quantum sensors designed to measure YPF, and from six quantum sensors designed to measure PPF. There were few differences among sensors within a group (usually <5%), but YPF values from sensors were consistently lower (3% to 20%) than YPF values calculated from spectroradiometric measurements. Quantum sensor measurements of PPF also were consistently lower than PPF values calculated from spectroradiometric measurements, but the differences were <7% for all sources, except red-light-emitting diodes. The sensors were most accurate for broad-band sources and least accurate for narrow-band sources. According to spectroradiometric measurements, YPF sensors were significantly less accurate (>9% difference) than PPF sensors under metal halide, high-pressure sodium, and low-pressure sodium lamps. Both sensor types were inaccurate (>18% error) under red-light-emitting diodes. Because both YPF and PPF sensors are imperfect integrators, and because spectroradiometers can measure photosynthetically active radiation much more accurately, researchers should consider developing calibration factors from spectroradiometric data for some specific radiation sources to improve the accuracy of integrating sensors.

NASA Center KSC↗
NASA NTRS2021

Angle Dependence of Focused X-Ray-Induced Single Event Transients in an Epitaxial Silicon Diode

Focused X-Ray single event transient (SET) experiments are performed at small angles on an epitaxial silicon diode at two reverse bias conditions. For both biases, the collected charge and peak current results follow the cosine law, while the transient fall time remains independent of incident angle. This demonstrates that only the amount of charge being generated is affected by angle and not the fundamental device response.

Heavy ions↗
NASA NTRS2007

The Role of Convection in Redistributing Formaldehyde to the Upper Troposphere Over North America and the North Atlantic during the Summer 2004 INTEX Campaign

Measurements of CH2O from a tunable diode laser absorption spectrometer (TDLAS) were acquired onboard the NASA DC-8 during the summer 2004 INTEX-NA (Intercontinental Chemical Transport Experiment - North America) campaign to test our understanding of convection and production mechanisms in the upper troposphere (UT, 6-12-km) over continental North America and the North Atlantic Ocean. Point-by-point comparisons with box model calculations, when MHP (CH3OOH) measurements were available for model constraint, resulted in a median CH2O measurement/model ratio of 0.91 in the UT. Multiple tracers were used to arrive at a set of UT CH2O background and perturbed air mass periods, and 46% of the TDLAS measurements fell within the latter category. At least 66% to 73% of these elevated UT observations were caused by enhanced production from CH2O precursors rather than direct transport of CH2O from the boundary layer. This distinction is important, since the effects from the former can last for over a week or more compared to one day or less in the case of convective transport of CH2O itself. In general, production of CH2O from CH4 was found to be the dominant source term, even in perturbed air masses. This was followed by production from MHP, methanol, PAN type compounds, and ketones, in descending order of their contribution. In the presence of elevated NO from lightning and potentially from the stratosphere, there was a definite trend in the CH2O discrepancy, which for the highest NO mixing ratios produced a median CH2O measurement/model ratio of 3.9 in the 10-12-km range. Discrepancies in CH2O and HO2 in the UT with NO were highly correlated and this provided further information as to the possible mechanism(s) responsible. These discrepancies with NO are consistent with additional production sources of both gases involving CH3O2 + NO reactions, most likely caused by unmeasured hydrocarbons.

Fried, Alan↗
NASA NTRS2006

SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 C

While there have been numerous reports of short-term transistor operation at 500 degree C or above, these devices have previously not demonstrated sufficient long-term operational durability at 500 degree C to be considered viable for most envisioned applications. This paper reports the development of Silicone Carbi field effect transistors capable of long-term electrical operation at 500 degree C. A 6H-SiC MESFET was packaged and subjected to continuous electrical operation while residing in a 500 degree C oven in oxidizing air atmosphere for over 2400 hours. The transistor gain, saturation current (IDSS), and on-resistance (RDS) changed by less than 20% from initial values throughout the duration of the biased 500 degree C test. Another high-temperature packaged 6H-SiC MESFET was employed to form a simple one-stage high-temperature low-frequency voltage amplifier. This single-stage common-source amplifier demonstrated stable continuous electrical operation (negligible changes to gain and operating biases) for over 600 hours while residing in a 500 degree C air ambient oven. In both cases, increased leakage from annealing of the Schottky gate-to-channel diode was the dominant transistor degradation mechanism that limited the duration of 500 degree C electrical operation.

Neudeck, Philip G.↗
NASA NTRS2022

Angle Dependence of Focused X-Ray-Induced Single Event Transients in an Epitaxial Silicon Diode

Focused X-Ray single event transient (SET) experiments are performed at small angles on an epitaxial silicon diode at two reverse bias conditions. For both biases, the collected charge and peak current results follow the cosine law, while the transient fall time remains independent of incident angle. This demonstrates that only the amount of charge being generated is affected by angle and not the fundamental device response for these relatively large devices.

Focused X-ray↗
NASA NTRS2006

Modular, Microprocessor-Controlled Flash Lighting System

A microprocessor-controlled lighting system generates brief, precisely timed, high-intensity flashes of light for scientific imaging at frame rates up to about 1 kHz. The system includes an array of light-emitting diodes (LEDs) that are driven in synchronism with an externally generated timing signal (for example, a timing signal generated by a video camera). The light output can be varied in peak intensity, pulse duration, pulse delay, and pulse rate, all depending on the timing signal and associated externally generated control signals. The array of LEDs comprises as many as 16 LED panels that can be attached together. Each LED panel is a module consisting of a rectangular subarray of 10 by 20 LEDs of advanced design on a printed-circuit board in a mounting frame with a power/control connector. The LED panels are controlled by an LED control module that contains an AC-to-DC power supply, a control board, and 8 LED-panel driver boards. In prior LED panels, the LEDs are packaged at less than maximum areal densities in bulky metal housings that reduce effective active areas. In contrast, in the present LED panels, the LEDs are packed at maximum areal density so as to afford 100-percent active area and so that when panels are joined side by side to form the array, there are no visible seams between them and the proportion of active area is still 100 percent. Each panel produces an illuminance of .5 x 10( exp 4) lux at a distance of 5.8 in. (approx.1.6 cm). The LEDs are driven according to a pulse-width-modulation control scheme that makes it safe to drive the LEDs beyond their rated steady-state currents in order to generate additional light during short periods. The drive current and the pulse-width modulation for each LED panel can be controlled independently of those of the other 15 panels. The maximum allowable duration of each pulse of drive current is a function of the amount of overdrive, the total time to be spent in overdrive operation, and the limitations of the LEDs. The system is configured to limit the overdrive according to values specific to each type of LED in the array. These values are coded into firmware to prevent inadvertent damage to the LED panels.

Kiefer, Dwayne↗
NASA NTRS1994

Physiological and genetic characterization of plant growth and gravitropism in LED light sources

Among the many problems of growing plants in completely controlled environments, such as those anticipated for the space station and the CELSS program, is the need to provide light that is both adequate for photosynthesis and of proper quality for normal growth and development. NASA scientists and engineers have recently become interested in the possibility of utilizing densely packed, solid state, light emitting diodes (LED's) as a source for this light. Unlike more conventional incandescent or electrical discharge lamps, these sources are highly monochromatic and lack energy in spectral regions thought to be important for normal plant development. In addition, a recent observation by NASA scientist has suggested that infra-red LED's, that are routinely used as photographic safelights for plants grown in darkness, may interact with the ability of plants to detect gravity. In order to establish how plants respond to light from these LED light sources we carried out a series of experiments with known pigment mutants of the model mustard plant, Arabidopsis thaliana, growing in either a gravity field or on a clinostat to simulate a micro-gravity environment. Results indicate that only red light from the 665 nm LED's disrupts the ability of normal wildtype seedlings to detect a gravity stimulus. There was no consistent effect found for the far-red (735 nm) LED's or either of the infrared (880 nm or 935 nm) LED sources but both showed some effect in one or more of the genotypes tested. Of these five members of the phytochrome multigene family in Arabidopsis, only the phytochrome B pigment mutant (hy3) lacked the ability to detect gravity under all conditions. There was no effect of either micro-gravity (clinostat) or the infra-red LED's on the light induced inhibition of hypocotyl elongation. Measurements of the pigment phytochrome in oats also showed no photoconversion by 15 min irradiations with the infra-red LED's. We conclude that phytochrome B is required for the perception of gravity and that only red light is able to disrupt this perception. The infra-red LED's also do not appear to interact with gravity perception in Arabidopsis, but caution should be exercised if infra-red LED's are to be used as photographic safelights for these types of experiments.

Deitzer, Gerald F.↗
NASA NTRS1993

Temperature dependence of the HNO3 UV absorption cross sections

The temperature dependence of the HNO3 absorption cross sections between 240 and 360 K over the wavelength range 195 to 350 nm has been measured using a diode array spectrometer. Absorption cross sections were determined using both (1) absolute pressure measurements at 298 K and (2) a dual absorption cell arrangement in which the absorption spectrum at various temperatures is measured relative to the room temperature absorption spectrum. The HNO3 absorption spectrum showed a temperature dependence which is weak at short wavelengths but stronger at longer wavelengths which are important for photolysis in the lower stratosphere. The 298 K absorption cross sections were found to be larger than the values currently recommended for atmospheric modeling (DeMore et al., 1992). Our absorption cross section data are critically compared with the previous measurements of both room temperature and temperature-dependent absorption cross sections. Temperature-dependent absorption cross sections of HNO3 are recommended for use in atmospheric modeling. These temperature dependent HNO3 absorption cross sections were used in a two-dimensional dynamical-photochemical model to demonstrate the effects of the revised absorption cross sections on loss rate of HNO3 and the abundance of NO2 in the stratosphere.

Burkholder, James B.↗
NASA NTRS2012

Plasma Actuators for Turbomachinery Flow Control

This report is Part I of the final report of NASA Cooperative Agreement contract no. NNX07AC02A. The period of performance was January 1, 2007 to December 31, 2010. This report includes the project summary, a list of publications and reprints of the publications that appeared in archival journals. Part II of the final report includes a Ph.D. dissertation and is published separately as NASA/CR-2012-2172655. The research performed under this project was focused on the operation of surface dielectric barrier discharge (DBD) devices driven by high voltage, nanosecond scale pulses plus constant or time varying bias voltages. The main interest was in momentum production and the range of voltages applied eliminated significant heating effects. The approach was experimental supplemented by computational modeling. All the experiments were conducted at Princeton University. The project provided comprehensive understanding of the associated physical phenomena. Limitations on the performance of the devices for the generation of high velocity surface jets were established and various means for overcoming those limitations were proposed and tested. The major limitations included the maximum velocity limit of the jet due to electrical breakdown in air and across the dielectric, the occurrence of backward breakdown during the short pulse causing reverse thrust, the buildup of surface charge in the dielectric offsetting the forward driving potential of the bias voltage, and the interaction of the surface jet with the surface through viscous losses. It was also noted that the best performance occurred when the nanosecond pulse and the bias voltage were of opposite sign. Solutions include the development of partially conducting surface coatings, the development of a semiconductor diode inlaid surface material to suppress the backward breakdown. Extension to long discharge channels was studied and a new ozone imaging method developed for more quantitative determination of surface jet properties.

Miles, Richard, B↗
NASA NTRS2007

An Automated Flying-Insect Detection System

An automated flying-insect detection system (AFIDS) was developed as a proof-of-concept instrument for real-time detection and identification of flying insects. This type of system has use in public health and homeland-security decision support, agriculture and military pest management, and/or entomological research. Insects are first lured into the AFIDS integrated sphere by insect attractants. Once inside the sphere, the insect s wing beats cause alterations in light intensity that is detected by a photoelectric sensor. Following detection, the insects are encouraged (with the use of a small fan) to move out of the sphere and into a designated insect trap where they are held for taxonomic identification or serological testing. The acquired electronic wing-beat signatures are preprocessed (Fourier transformed) in real time to display a periodic signal. These signals are sent to the end user where they are graphically. All AFIDS data are preprocessed in the field with the use of a laptop computer equipped with LabVIEW. The AFIDS software can be programmed to run continuously or at specific time intervals when insects are prevalent. A special DC-restored transimpedance amplifier reduces the contributions of low-frequency background light signals, and affords approximately two orders of magnitude greater AC gain than conventional amplifiers. This greatly increases the signal-to-noise ratio and enables the detection of small changes in light intensity. The AFIDS light source consists of high-intensity Al-GaInP light-emitting diodes (LEDs). The AFIDS circuitry minimizes brightness fluctuations in the LEDs and when integrated with an integrating sphere, creates a diffuse uniform light field. The insect wing beats isotropically scatter the diffuse light in the sphere and create wing-beat signatures that are detected by the sensor. This configuration minimizes variations in signal associated with insect flight orientation. Preliminary data indicate that AFIDS has sufficient sensitivity and frequency measuring capability to differentiate between male and female mosquitoes (Figure 1, bottom panel) and fruit flies (data not shown). Similar studies show that AFIDS can be utilized to detect discrete differences between two mosquito species, Aedes aegypti and Aedes albopictus. When fully deployable, a wireless network of AFIDS monitors could be used in combination with other remotely sensed data and visually displayed in a geographic information system (GIS) to provide real-time surveillance (see Figure 2). More accurate and sensitive insect population forecasts and effective rapid response and mitigation of insect issues would then be possible.

Vann, Timi↗
NASA NTRS1993

Lithium D-cell study

The purpose of this contract is to evaluate parametrically the effects of various factors including the electrolyte type, electrolyte concentration, depolarizer type, and cell configuration on lithium cell electrical performance and safety. This effort shall allow for the selection and optimization of cell design for future NASA applications while maintaining close ties with WGL's continuous improvements in manufacturing processes and lithium cell design. Taguchi experimental design techniques are employed in this task, and allow for a maximum amount of information to be obtained while requiring significantly less cells than if a full factorial design were employed. Acceptance testing for this task is modeled after the NASA Document EP5-83-025, Revision C, for cell weights, OCV's and load voltages. The performance attributes that are studied in this effort are fresh capacity and start-up characteristics evaluated at two rates and two temperatures, shelf-life characteristics including start-up and capacity retention, and iterative microcalorimetry measurements. Abuse testing includes forced over discharge at two rates with and without diode protection, temperature tolerance testing, and shorting tests at three rates with the measurement of heat generated during shorting conditions.

Size, P.↗
NASA NTRS1990

Method of fabricating germanium and gallium arsenide devices

A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

Jhabvala, Murzban↗
NASA NTRS2009

An LED Approach for Measuring the Photocatalytic Breakdown of Crystal Violet Dye

A simple technique to assess the reactivity of photocatalytic coatings sprayed onto transmissive glass surfaces was developed. This new method uses ultraviolet (UV) gallium nitride (GaN) light-emitting diodes (LEDs) to drive a photocatalytic reaction (the photocatalytic breakdown of a UV-resistant dye applied to a surface coated with the semiconductor titanium dioxide); and then a combination of a stabilized white light LED and a spectrometer to track the dye degradation as a function of time. Simple, standardized evaluation techniques that assess photocatalytic materials over a variety of environmental conditions, including illumination level, are not generally available and are greatly needed prior to in situ application of photocatalytic technologies. To date, much research pertaining to this aspect of photocatalysis has been limited and has focused primarily on laboratory experiments using mercury lamps. Mercury lamp illumination levels are difficult to control over large ranges and are temporally modulated by line power, limiting their use in helping to understand and predict how photocatalytic materials will behave in natural environmental settings and conditions. The methodology described here, using steady-state LEDs and time series spectroradiometric techniques, is a novel approach to explore the effect of UV light on the photocatalytic degradation of a UV resistant dye (crystal violet). GaN UV LED arrays, centered around 365 nm with an adjustable DC power supply, are used to create a small, spatially uniform light field where the steady state light level can be varied over three to four orders of magnitude. For this study, a set of glass microscope slides was custom coated with a thinly sprayed layer of photocatalytic titanium dioxide. Crystal violet was then applied to these titanium-dioxide coated slides and to uncoated control slides. The slides were then illuminated at various light levels from the dye side of the slide by the UV LED array. To monitor dye degradation on the slides over time, a temperature-stabilized white light LED was used to illuminate the opposite side of the slides. As the dye degraded, the amount of light from the white light LED transmitted through the slide was monitored with a spectrometer and subsequently analyzed to determine and compare the rate of dye degradation for photocatalytically coated versus uncoated slide surfaces. The long-term stability of the spectrometer/white light LED combination, which required only a single reference spectra to be taken for a time series sequence of several hours, enabled accurate measurements of transmitted light over time. Time series transmission curves were generated and results demonstrated that over time the transmission increased much more rapidly on the coated slides than on the control slides. This experimental configuration and methodology for photocatalytic activity measurement minimizes many external variable effects and allows low light level studies to be performed. This study also compares the advantages of this novel LED light source design to traditional mercury lamp systems and non-LED lamp approaches that have conventionally been used. The methodology and experimental design research summarized in this abstract is partly funded by the Department of Homeland Security, Science and Technology Directorate, and by the NASA Stennis Space Center Innovative Partnerships Program.

Ryan, Robert E.↗
NASA NTRS2004

Discrete Wavelength-Locked External Cavity Laser

A prototype improved external cavity laser (ECL) was demonstrated in the second phase of a continuing effort to develop wavelength-agile lasers for fiber-optic communications and trace-gas-sensing applications. This laser is designed to offer next-generation performance for incorporation into fiber-optic networks. By eliminating several optical components and simplifying others used in prior designs, the design of this laser reduces costs, making lasers of this type very competitive in a price-sensitive market. Diode lasers have become enabling devices for fiber optic networks because of their cost, compactness, and spectral properties. ECLs built around diode laser gain elements further enhance capabilities by virtue of their excellent spectral properties with significantly increased (relative to prior lasers) wavelength tuning ranges. It is essential to exploit the increased spectral coverage of ECLs while simultaneously insuring that they operate only at precisely defined communication channels (wavelengths). Heretofore, this requirement has typically been satisfied through incorporation of add-in optical components that lock the ECL output wavelengths to these specific channels. Such add-in components contribute substantially to the costs of ECL lasers to be used as sources for optical communication networks. Furthermore, the optical alignment of these components, needed to attain the required wavelength precision, is a non-trivial task and can contribute substantially to production costs. The design of the present improved ECL differs significantly from the designs of prior ECLs. The present design relies on inherent features of components already included within an ECL, with slight modifications so that these components perform their normal functions while simultaneously effecting locking to the required discrete wavelengths. Hence, add-in optical components and the associated cost of alignment can be eliminated. The figure shows the locking feedback signal, and the frequency locking achieved by use of this signal, as a mirror is tilted through a range of angles to tune the ECL through 48 channels. The data for the frequency plot were obtained, simultaneously with the data for the locking-signal plot, by using a scanning Michelson interferometer to precisely determine the ECL wavelength (and, hence, frequency). Given the ability of the Michelson interferometer to obtain highly precise readings, the frequency plot can be taken to be a reliable indication of single-mode operation. The discontinuities in the frequency plot signify the switching of the ECL between channels; in other words, they indicate tuning with locking to discrete frequencies. The peaks of the feedbacklocking signal correspond to the centers, or near centers, of the mirror angle scan through the corresponding channels. Thus, it is clear that when the feedback-locking signal is at a local maximum, the ECL is operating at single frequency at or near the middle frequency of the selected channel. This is all that is required for precisely locking the ECL output wavelength. The locking is achieved without additional external optical components.

Pilgrim, Jeffrey S.↗
NASA NTRS2009

Development of a Portable Oxygen Monitoring System for Operations in the International Space Station Airlock

NASA is currently engaged in an activity to facilitate effective operations on the International Space Station (ISS) after the Space Shuttle retires. Currently, the Space Shuttle delivers crew and cargo to and from ISS. The Space Shuttle provides the only large scale method of hardware return from ISS to the ground. Hardware that needs to be periodically repaired, refurbished, or recalibrated must come back from ISS on the Shuttle. One example of NASA flight hardware that is used on ISS and refurbished on the ground is the Compound Specific Analyzer for Oxygen (CSA-O2). The CSA-O2 is an electrochemical sensor that is used on orbit for about 12 months (depending on Shuttle launch schedules), then returned to the ground for sensor replacement. The shuttle is scheduled to retire in 2010, and the ISS is scheduled to operate until 2016. NASA needs a hand held sensor that measures oxygen in the ISS environment and has a 5-10 year service life. After conducting a survey of oxygen sensor systems, NASA selected a Tunable Diode Laser Absorption Spectrometer (TDLAS) as the method of measurement that best addresses the needs for ISS. These systems are compact, meet ISS accuracy requirements, and because they use spectroscopic techniques, the sensors are not consumed or altered after making a measurement. TDLAS systems have service life ratings of 5-10 years, based on the lifetime of the laser. NASA is engaged in modifying a commercially available sensor, the Vaisala OMT 355, for the ISS application. The Vaisala OMT 355 requires three significant modifications to meet ISS needs. The commercial sensor uses a wall mount power supply, and the ISS sensor needs to use a rechargeable battery as its source of power. The commercial sensor has a pressure correction setpoint: the sensor can be adjusted to operate at reduced pressure conditions, but the sensor does not self correct dynamically and automatically. The ISS sensor needs to operate in the airlock, and make accurate measurements in an environment that can change from 14.7 psia to 10.2 psia in 15 minutes. The commercial sensor needs to be repackaged into a configuration that is more compact, and better suited for ISS airlock operations. NASA has recently completed a prototype of the reconfigured system. The unit has been repackaged in a way that the optical path of the spectrometer is unchanged, but the electronics has been integrated into a case measuring 10.7 X 7.2 X 3.0 inches. Two flight qualified rechargeable batteries have been integrated into system. The batteries can power the sensor for 10 hours on a single charge. A pressure sensor has been added to the system. The modified unit automatically compensates for changes in pressure, and meets 0.2% accuracy requirements for oxygen measurements in an environment with 18 to 32% oxygen across a pressure range of 10.0 to 15.0 psia.

Graf, John↗