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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Mapping growth windows in quaternary perovskite oxide systems by hybrid molecular beam epitaxy

Requisite to growing stoichiometric perovskite thin films of the solid-solution A ' 1-x A x B O 3 by hybrid molecular beam epitaxy is understanding how the growth conditions interpolate between the end members A'B O 3 and AB O 3 , which can be grown in a self-regulated fashion, but under different conditions. Using the example of La 1-x Sr x VO 3 , the two-dimensional growth parameter space that is spanned by the flux of the metal-organic precursor vanadium oxytriisopropoxide and composition, x , was mapped out. The evolution of the adsorption-controlled growth window was obtained using a combination of X-ray diffraction, atomic force microscopy, reflection high-energy electron-diffraction (RHEED), and Rutherford backscattering spectroscopy. It is found that the stoichiometric growth conditions can be mapped out quickly with a single calibration sample using RHEED. Once stoichiometric conditions have been identified, the out-of-plane lattice parameter can be utilized to precisely determine the composition x . This strategy enables the identification of growth conditions that allow the deposition of stoichiometric perovskite oxide films with random A-site cation mixing, which is relevant to a large number of perovskite materials with interesting properties, e.g., high-temperature superconductivity and colossal magnetoresistance, that emerge in solid solution A ' 1-x A x B O 3 .

36 MATERIALS SCIENCE↗
DOE OSTI2014

On the interplay effects with proton scanning beams in stage III lung cancer

Purpose: To assess the dosimetric impact of interplay between spot-scanning proton beam and respiratory motion in intensity-modulated proton therapy (IMPT) for stage III lung cancer. Methods: Eleven patients were sampled from 112 patients with stage III nonsmall cell lung cancer to well represent the distribution of 112 patients in terms of target size and motion. Clinical target volumes (CTVs) and planning target volumes (PTVs) were defined according to the authors' clinical protocol. Uniform and realistic breathing patterns were considered along with regular- and hypofractionation scenarios. The dose contributed by a spot was fully calculated on the computed tomography (CT) images corresponding to the respiratory phase that the spot is delivered, and then accumulated to the reference phase of the 4DCT to generate the dynamic dose that provides an estimation of what might be delivered under the influence of interplay effect. The dynamic dose distributions at different numbers of fractions were compared with the corresponding 4D composite dose which is the equally weighted average of the doses, respectively, computed on respiratory phases of a 4DCT image set. Results: Under regular fractionation, the average and maximum differences in CTV coverage between the 4D composite and dynamic doses after delivery of all 35 fractions were no more than 0.2% and 0.9%, respectively. The maximum differences between the two dose distributions for the maximum dose to the spinal cord, heart V40, esophagus V55, and lung V20 were 1.2 Gy, 0.1%, 0.8%, and 0.4%, respectively. Although relatively large differences in single fraction, correlated with small CTVs relative to motions, were observed, the authors' biological response calculations suggested that this interfractional dose variation may have limited biological impact. Assuming a hypofractionation scenario, the differences between the 4D composite and dynamic doses were well confined even for single fraction. Conclusions: Despite the presence of interplay effect, the delivered dose may be reliably estimated using the 4D composite dose. In general the interplay effect may not be a primary concern with IMPT for lung cancers for the authors' institution. The described interplay analysis tool may be used to provide additional confidence in treatment delivery.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2015

CHARACTERIZATION OF Pro-Beam LOW VOLTAGE ELECTRON BEAM WELDING MACHINE

The purpose of this paper is to present and discuss data related to the performance of a newly acquired low voltage electron beam welding machine. The machine was made by Pro-Beam AG &Co. KGaA of Germany. This machine was recently installed at LANL in building SM -39; a companion machine was installed in the production facility. The PB machine is substantially different than the EBW machines typically used at LANL and therefore, it is important to understand its characteristics as well as possible. Our basic purpose in this paper is to present basic machine performance data and to compare those with similar results from the existing EBW machines. It is hoped that this data will provide a historical record of this machine’s characteristics as well as possibly being helpful for transferring welding processes from the old EBW machines to the PB machine or comparable machines that may be purchased in the future.

Electron Beam Welding, Electron Beam Measurement↗
DOE OSTI2016

Three dimensional microstructural characterization of nanoscale precipitates in AA7075-T651 by focused ion beam (FIB) tomography

The size and distribution of precipitates in Al 7075 alloys affects both the mechanical and corrosion behavior (including stress corrosion cracking and fatigue corrosion) of the alloy. Three dimensional (3D) quantitative microstructural analysis of Al 7075 in the peak aged condition (T651) allows for a better understanding of these behaviors. In this study, Focused ion beam (FIB) tomography was used to characterize the microstructure in three dimensions. Analysis of grains and precipitates was performed in terms of volume, size, and morphology. It was found that the precipitates at the grain boundaries are larger in size, higher in aspect ratios and maximum Feret diameter compared to the precipitates inside the grains, due to earlier nucleation of the precipitates at the grain boundaries. Our data on the precipitates at the interface between grains and Mg{sub 2}Si inclusion show that the surfaces of inclusion (impurity) particles can serve as a location for heterogeneous nucleation of precipitates. - Highlights: •Focused ion beam (FIB) tomography was used to characterize the microstructure of Al 7075 in three dimensions. •Analysis of grains and precipitates was performed in terms of volume, size, and morphology. •Precipitates at the grain boundaries have larger size and aspect ratio compared to the precipitates inside the grains.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Microstructural development of electron beam processed Al-3Ti-1Sc alloy under different electron beam scanning speeds

A systematic study has been made of the microstructural development in as-cast 30 mm thick Al-3Ti-1Sc (wt%) plate samples that were processed by electron beam (EB) melting at different scanning speeds of 3, 5, 8, 12, 15 and 20 mm/s. The composition of the alloy is designed to capitalize on the potential for significantly extended solubility values of both Sc and Ti in Al when cooled at high cooling rates. The resulting microstructures are characterised using transmission electron microscopy (TEM) and other analytical means, assisted with Thermo-Calc predictions and Vicker's microhardness measurements. EB scanning speed plays a key role in determining the phase formation and microstructural development in the Al-3Ti-1Sc alloy when the beam is applied an accelerating voltage of 50 kV and a current of 30 μA. The major microstructural features in the re-solidified zone include (i) the formation of the primary tetragonal Al{sub 3}(Ti,Sc) phases and their retention or subsequent transformation to stable cubic Al{sub 3}(Ti,Sc) phases; (ii) the complete suppression of the primary tetragonal Al{sub 3}(Ti,Sc) phases at the scanning speed of 20 mm/s; and (iii) the formation of cubic Al{sub 3}(Ti,Sc) precipitates in the α(Al) matrix supersaturated with both Sc and Ti. These experimental findings are informative for both EB processing of Al-Ti-Sc alloys and the design of new Al alloys for additive manufacturing processes.

36 MATERIALS SCIENCE↗
DOE OSTI2025

A rotor-based multileaf collimator for beam shaping

We introduce a new style of multileaf collimator which employs rotors with angularly dependent radius to control the masking aperture: a rotor-based multileaf collimator (RMLC). Using a padlock-inspired mechanism, a single motor can set dozens of rotors, i.e. leaves, independently. This is especially important for an ultra-high vacuum (UHV) compatible MLC, since this reduces the number of actuators and vacuum feedthroughs required by more than an order of magnitude. This new RMLC will complement previous work employing a UHV compatible MLC with an emittance exchange beamline to create arbitrarily shaped beams on demand. A feed-forward control system which abstracts away the complexity of the RMLC operation, and is adaptable to real beamline conditions, is discussed and demonstrated in simulation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2012

Optical diagnostic suite (schlieren, interferometry, and grid image refractometry) on OMEGA EP using a 10-ps, 263-nm probe beam

A 10-ps, 263-nm (4{omega}) laser is being built to probe plasmas produced on the OMEGA EP [J. H. Kelly, L. J. Waxer, V. Bagnoud, I. A. Begishev, J. Bromage, B. E. Kruschwitz, T. E. Kessler, S. J. Loucks, D. N. Maywar, R. L. McCrory et al., J. Phys. IV France 133, 75-80 (2006)]. A suite of optical diagnostics (schlieren, interferometry, and grid image refractometry) has been designed to diagnose and characterize a wide variety of plasmas. Light scattered by the probe beam is collected by an f/4 catadioptric telescope and a transport system is designed to image with a near-diffraction-limited resolution ({approx}1 -{mu}m full width at half maximum) over a 5-mm field of view to a diagnostic table. The transport system provides a contrast greater than 1 : 10{sup 4} with respect to all wavelengths outside of the 263 {+-} 2 nm measurement range.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Self-organized coherent bursts of stimulated Raman scattering and speckle interaction in multi-speckled laser beams

Nonlinear physics governing the kinetic behavior of stimulated Raman scattering (SRS) in multi-speckled laser beams has been identified in the trapping regime over a wide range of k{lambda}{sub D} values (here k is the wave number of the electron plasma waves and {lambda}{sub D} is the Debye length) in homogeneous and inhomogeneous plasmas. Hot electrons from intense speckles, both forward and side-loss hot electrons produced during SRS daughter electron plasma wave bowing and filamentation, seed and enhance the growth of SRS in neighboring speckles by reducing Landau damping. Trapping-enhanced speckle interaction through transport of hot electrons, backscatter, and sidescatter SRS light waves enable the system of speckles to self-organize and exhibit coherent, sub-ps SRS bursts with more than 100% instantaneous reflectivity, resulting in an SRS transverse coherence width much larger than a speckle width and a SRS spectrum that peaks outside the incident laser cone. SRS reflectivity is found to saturate above a threshold laser intensity at a level of reflectivity that depends on k{lambda}{sub D}: higher k{lambda}{sub D} leads to lower SRS and the reflectivity scales as {approx}(k{lambda}{sub D}){sup -4}. As k{lambda}{sub D} and Landau damping increase, speckle interaction via sidescattered light and side-loss hot electrons decreases and the occurrence of self-organized events becomes infrequent, leading to the reduction of time-averaged SRS reflectivity. It is found that the inclusion of a moderately strong magnetic field in the laser direction can effectively control SRS by suppressing transverse speckle interaction via hot electron transport.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2013

Band offsets of La{sub 2}O{sub 3} on (0001) GaN grown by reactive molecular-beam epitaxy

La{sub 2}O{sub 3} films were prepared on (0001)-oriented GaN substrates via reactive molecular-beam epitaxy. Film orientation and phase were assessed using reflection high-energy electron and X-ray diffraction. Films were observed to grow as predominantly hexagonal La{sub 2}O{sub 3} for thicknesses less than 10 nm while film thickness greater than 10 nm favored mixed cubic and hexagonal symmetries. Band offsets were characterized by X-ray photoelectron spectroscopy on hexagonally symmetric films and valence band offsets of 0.63 {+-} 0.04 eV at the La{sub 2}O{sub 3}/GaN interface were measured. A conduction band offset of approximately 1.5 eV could be inferred from the measured valence band offset.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Comparative study of beam losses and heat loads reduction methods in MITICA beam source

In negative ion electrostatic accelerators a considerable fraction of extracted ions is lost by collision processes causing efficiency loss and heat deposition over the components. Stripping is proportional to the local density of gas, which is steadily injected in the plasma source; its pumping from the extraction and acceleration stages is a key functionality for the prototype of the ITER Neutral Beam Injector, and it can be simulated with the 3D code AVOCADO. Different geometric solutions were tested aiming at the reduction of the gas density. The parameter space considered is limited by constraints given by optics, aiming, voltage holding, beam uniformity, and mechanical feasibility. The guidelines of the optimization process are presented together with the proposed solutions and the results of numerical simulations.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Focused-ion-beam induced damage in thin films of complex oxide BiFeO{sub 3}

An unexpected, strong deterioration of crystal quality is observed in epitaxial perovskite BiFeO{sub 3} films in which microscale features have been patterned by focused-ion-beam (FIB) milling. Specifically, synchrotron x-ray microdiffraction shows that the damaged region extends to tens of μm, but does not result in measureable changes to morphology or stoichiometry. Therefore, this change would go undetected with standard laboratory equipment, but can significantly influence local material properties and must be taken into account when using a FIB to manufacture nanostructures. The damage is significantly reduced when a thin metallic layer is present on top of the film during the milling process, clearly indicating that the reduced crystallinity is caused by ion beam induced charging.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Single-crystal cubic boron nitride thin films grown by ion-beam-assisted molecular beam epitaxy

We investigated the formation of cubic boron nitride (c-BN) thin films on diamond (001) and (111) substrates by ion-beam-assisted molecular beam epitaxy (MBE). The metastable c-BN (sp{sup 3}-bonded BN) phase can be epitaxially grown as a result of the interplay between competitive phase formation and selective etching. We show that a proper adjustment of acceleration voltage for N{sub 2}{sup +} and Ar{sup +} ions is a key to selectively discriminate non-sp{sup 3} BN phases. At low acceleration voltage values, the sp{sup 2}-bonded BN is dominantly formed, while at high acceleration voltages, etching dominates irrespective of the bonding characteristics of BN.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Exchange bias in polycrystalline magnetite films made by ion-beam assisted deposition

Iron oxide films were produced using ion-beam-assisted deposition, and Raman spectroscopy and x-ray diffraction indicate single-phase magnetite. However, incorporation of significant fractions of argon in the films from ion bombardment is evident from chemical analysis, and Fe/O ratios are lower than expected from pure magnetite, suggesting greater than normal disorder. Low temperature magnetometry and first-order reversal curve measurements show strong exchange bias, which likely arises from defects at grain boundaries, possibly amorphous, creating frustrated spins. Since these samples contain grains ∼6 nm, a large fraction of the material consists of grain boundaries, where spins are highly disordered and reverse independently with external field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Nondestructive synchronous beam current monitor

A fast current transformer is mounted after the deflectors of the Berkeley 88-Inch Cyclotron. The measured signal is amplified and connected to the input of a lock-in amplifier. The lock-in amplifier performs a synchronous detection of the signal at the cyclotron second harmonic frequency. The magnitude of the signal detected is calibrated against a Faraday cup and corresponds to the beam intensity. It has exceptional resolution, long term stability, and can measure the beam current leaving the cyclotron as low as 1 nA.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Ion beam modification of topological insulator bismuth selenide

In this study, we demonstrate chemical doping of a topological insulator Bi 2 Se 3 using ion implantation. Ion beam-induced structural damage was characterized using grazing incidence X-ray diffraction and transmission electron microscopy. Ion damage was reversed using a simple thermal annealing step. Carrier-type conversion was achieved using ion implantation followed by an activation anneal in Bi 2 Se 3 thin films. These two sets of experiments establish the feasibility of ion implantation for chemical modification of Bi 2 Se 3 , a prototypical topological insulator. Ion implantation can, in principle, be used for any topological insulator. The direct implantation of dopants should allow better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation also enables the fabrication of inhomogeneously doped structures, which in turn should make possible new types of device designs.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Comparison of single junction AlGaInP and GaInP solar cells grown by molecular beam epitaxy

We have investigated ∼2.0 eV (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P and ∼1.9 eV Ga{sub 0.51}In{sub 0.49}P single junction solar cells grown on both on-axis and misoriented GaAs substrates by molecular beam epitaxy (MBE). Although lattice-matched (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P solar cells are highly attractive for space and concentrator photovoltaics, there have been few reports on the MBE growth of such cells. In this work, we demonstrate open circuit voltages (V{sub oc}) ranging from 1.29 to 1.30 V for Ga{sub 0.51}In{sub 0.49}P cells, and 1.35–1.37 V for (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P cells. Growth on misoriented substrates enabled the bandgap-voltage offset (W{sub oc} = E{sub g}/q − V{sub oc}) of Ga{sub 0.51}In{sub 0.49}P cells to decrease from ∼575 mV to ∼565 mV, while that of (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P cells remained nearly constant at 620 mV. The constant W{sub oc} as a function of substrate offcut for (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P implies greater losses from non-radiative recombination compared with the Ga{sub 0.51}In{sub 0.49}P devices. In addition to larger W{sub oc} values, the (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P cells exhibited significantly lower internal quantum efficiency (IQE) values than Ga{sub 0.51}In{sub 0.49}P cells due to recombination at the emitter/window layer interface. A thin emitter design is experimentally shown to be highly effective in improving IQE, particularly at short wavelengths. Our work shows that with further optimization of both cell structure and growth conditions, MBE-grown (Al{sub x}Ga{sub 1−x}){sub 0.51}In{sub 0.49}P will be a promising wide-bandgap candidate material for high-efficiency, lattice-matched multi-junction solar cells.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Electron transport in unipolar InGaN/GaN multiple quantum well structures grown by NH{sub 3} molecular beam epitaxy

Unipolar-light emitting diode like structures were grown by NH{sub 3} molecular beam epitaxy on c plane (0001) GaN on sapphire templates. Studies were performed to experimentally examine the effect of random alloy fluctuations on electron transport through quantum well active regions. These unipolar structures served as a test vehicle to test our 2D model of the effect of compositional fluctuations on polarization-induced barriers. Variables that were systematically studied included varying quantum well number from 0 to 5, well thickness of 1.5 nm, 3 nm, and 4.5 nm, and well compositions of In{sub 0.14}Ga{sub 0.86}N and In{sub 0.19}Ga{sub 0.81}N. Diode-like current voltage behavior was clearly observed due to the polarization-induced conduction band barrier in the quantum well region. Increasing quantum well width and number were shown to have a significant impact on increasing the turn-on voltage of each device. Temperature dependent IV measurements clearly revealed the dominant effect of thermionic behavior for temperatures from room temperature and above. Atom probe tomography was used to directly analyze parameters of the alloy fluctuations in the quantum wells including amplitude and length scale of compositional variation. A drift diffusion Schrödinger Poisson method accounting for two dimensional indium fluctuations (both in the growth direction and within the wells) was used to correctly model the turn-on voltages of the devices as compared to traditional 1D simulation models.

77 NANOSCIENCE AND NANOTECHNOLOGY↗