Crystallization of polyethylene terephthalate from the glassy amorphous state.
Morphology of polyethylene terephthalate crystallized from glassy amorphous state by annealing, noting spherulite growth
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Morphology of polyethylene terephthalate crystallized from glassy amorphous state by annealing, noting spherulite growth
Negative resistance and switching in amorphous B thin films observed in Ti electrodes, noting volt-ampere characteristics
Thermal conductivity and specific heat of amorphous polymers between 0.4 and 4 deg K
Amorphous semiconducting alloys single band model characteristics
Heat conduction orientation anisotropy in linear amorphous high polymers due to uniaxial stretching, noting molecular weight distribution and temperature effects
Phenomenology theory on conduction and switching behavior of amorphous semiconductor diodes
Amorphous polymers thermal conductivity measured at 0.4-4 K, observing similar temperature dependences
Amorphous boron arsenide films deposited on Si substrates, measuring current voltage characteristics
Amorphous film formation and crystallization, discussing thermal stability
Optical properties of amorphous polymers, considering one state calculations for flexible polypeptides in solution and disordered regions of films or proteins
Specific heat of amorphous polymethyl methacrylate and polystyrene by pulse method below 4 K, comparing Debye and acoustic values
Electrical properties of metallic layers implanted in amorphous oxide glass
Electron and hole drift mobilities in photoconducting amorphous selenium
Measuring instrument for amorphous and polycrystalline materials resistivity and Seebeck coefficient as function of temperature and pressure
Coulomb interaction effect between charged traps in amorphous semiconductor, noting state density reduction at Fermi energy
Electron micrographs have been obtained which clearly show the existence of a void network in amorphous Ge films formed at substrate temperatures of 25 and 150 C, and the absence of a void network in films formed at higher substrate temperatures of 200 and 250 C. These results correlate quite well with density measurements and predictions of void densities by indirect methods.
Measurement of low-field and high-field resistivity in amorphous Ge in both the planar and transverse directions on the same samples, whose thickness ranged from 0.4 to 4 microns. No anisotropy was found, suggesting that the voids recently described by Galeener (1971) may not play a significant role in these transport processes.
The suggestion of Bibring et al. (1971) that the low albedos and reddish spectra observed in some lunar fines are caused by a low density amorphous substance which coats the fines is disputed. It is shown that these coatings have only a marginal effect on lunar reflectivity.