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At least 595 records · Page 33

High-resolution electron microscope observation of voids in amorphous Ge.

Electron micrographs have been obtained which clearly show the existence of a void network in amorphous Ge films formed at substrate temperatures of 25 and 150 C, and the absence of a void network in films formed at higher substrate temperatures of 200 and 250 C. These results correlate quite well with density measurements and predictions of void densities by indirect methods.

Donovan, T. M.↗

Search for anisotropic electrical properties in amorphous germanium.

Measurement of low-field and high-field resistivity in amorphous Ge in both the planar and transverse directions on the same samples, whose thickness ranged from 0.4 to 4 microns. No anisotropy was found, suggesting that the voids recently described by Galeener (1971) may not play a significant role in these transport processes.

Clark, A. H.↗

Reflection spectra of lunar dust grains with amorphous coatings.

The suggestion of Bibring et al. (1971) that the low albedos and reddish spectra observed in some lunar fines are caused by a low density amorphous substance which coats the fines is disputed. It is shown that these coatings have only a marginal effect on lunar reflectivity.

Hapke, B.↗