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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

State Estimation-Based Distributed Energy Resource Optimization for Distribution Voltage Regulation in Telemetry-Sparse Environments Using a Real-Time Digital Twin

Real-time state estimation using a digital twin can overcome the lack of in-field measurements inside an electric feeder to optimize grid services provided by distributed energy resources (DERs). Optimal reactive power control of DERs can be used to mitigate distribution system voltage violations caused by increased penetrations of photovoltaic (PV) systems. In this work, a new technology called the Programmable Distribution Resource Open Management Optimization System (ProDROMOS) issued optimized DER reactive power setpoints based-on results from a particle swarm optimization (PSO) algorithm wrapped around OpenDSS time-series feeder simulations. This paper demonstrates the use of the ProDROMOS in a RT simulated environment using a power hardware-in-the-loop PV inverter and in a field demonstration, using a 678 kW PV system in Grafton (MA, USA). The primary contribution of the work is demonstrating a RT digital twin effectively provides state estimation pseudo-measurements that can be used to optimize DER operations for distribution voltage regulation.

Darbali-Zamora, Rachid↗
DOE OSTI2021

Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs

Ultra-low voltage drop tunnel junctions (TJs) were utilized to enable multi-active region blue light emitting diodes (LEDs) with up to three active regions in a single device. The multi-active region blue LEDs were grown monolithically by metal-organic chemical vapor deposition (MOCVD) without growth interruption. This is the first demonstration of a MOCVD grown triple-junction LED. Optimized TJ design enabled near-ideal voltage and EQE scaling close to the number of junctions. Furthermore, this work demonstrates that with proper TJ design, improvements in wall-plug efficiency at high output power operation are possible by cascading multiple III-nitride based LEDs.

42 ENGINEERING↗
DOE OSTI2024

High-voltage AlN Schottky barrier diodes on bulk AlN substrates by MOCVD

Abstract This letter reports the demonstration of Aluminum nitride (AIN) Schottky barrier diodes on bulk AlN substrates by metalorganic chemical vapor phase deposition with breakdown voltages exceeding 3 kV. The devices exhibited good rectifying characteristics with ON/OFF ratios of 10 6 –10 8 and excellent thermal stability from 298 to 623 K. The device Schottky barrier height increased from 0.89 to 1.85 eV, and the ideality factor decreased from 4.29 to 1.95 with increasing temperature, ascribed to the inhomogeneous metal/AlN interface. This work demonstrates the potential of AlN as an ultra-wide bandgap semiconductor for developing multi-kV AlN high-voltage and high-power devices.

Physics↗
DOE OSTI2024

High-current, high-voltage AlN Schottky barrier diodes

AlN Schottky barrier diodes with low ideality factor (<1.2), low differential ON-resistance (<0.6 mΩ cm 2 ), high current density (>5 kA cm −2 ), and high breakdown voltage (680 V) are reported. The device structure consisted of a two-layer, quasi-vertical design with a lightly doped AlN drift layer and a highly doped Al 0.75 Ga 0.25 N ohmic contact layer grown on AlN substrates. A combination of simulation, current–voltage measurements, and impedance spectroscopy analysis revealed that the AlN/AlGaN interface introduces a parasitic electron barrier due to the conduction band offset between the two materials. This barrier was found to limit the forward current in fabricated diodes. Further, we show that introducing a compositionally-graded layer between the AlN and the AlGaN reduces the interfacial barrier and increases the forward current density of fabricated diodes by a factor of 10 4 .

Quiñones, C. E. (ORCID:0000000192703747)↗
DOE OSTI2024

Stable and high voltage and power output of CEA-MFCs internally connected in series (iCiS-MFC)

The voltage output of a single MFC is normally less than 0.8 V, often less than 0.3 V at maximum power output, which greatly limits the application of MFCs. When MFCs are scaled up, however, increasing reactor size has typically resulted in decreased power density. In this study, we developed a novel MFC configuration that contains multiple cloth electrode assemblies in which the MFCs were internally connected in series (iCiS-MFC). The iCiS-MFC, equivalent to 3 CEA-MFCs, produced a high voltage output over 1.8 V and a maximum power density of 3.5 W m -2 using carbon cloth cathodes containing activated carbon as the catalyst. This power density is 6% higher than that reported for a similar smaller CEA-MFC, indicating that power can be maintained during scale-up with a greater than 33-fold increase in total cathode surface area and greater than 20-fold increase in reactor volume. High stability was also demonstrated based on the performance of the iCiS-MFC over a period of one year of operation. The high power and stability is likely due, in part, to a more efficient means of current collection through the internal series connection, which also avoids the use of expensive current collectors. These results clearly demonstrate the great potential of this MFC design for further scaling-up.

25 ENERGY STORAGE↗
DOE OSTI2024

CryoEM structures of the human CLC-2 voltage-gated chloride channel reveal a ball-and-chain gating mechanism

CLC-2 is a voltage-gated chloride channel that contributes to electrical excitability and ion homeostasis in many different tissues. Among the nine mammalian CLC homologs, CLC-2 is uniquely activated by hyperpolarization, rather than depolarization, of the plasma membrane. The molecular basis for the divergence in polarity of voltage gating among closely related homologs has been a long-standing mystery, in part because few CLC channel structures are available. Here, we report cryoEM structures of human CLC-2 at 2.46 – 2.76 Å, in the presence and absence of the selective inhibitor AK-42. AK-42 binds within the extracellular entryway of the Cl – -permeation pathway, occupying a pocket previously proposed through computational docking studies. In the apo structure, we observed two distinct conformations involving rotation of one of the cytoplasmic C-terminal domains (CTDs). In the absence of CTD rotation, an intracellular N-terminal 15-residue hairpin peptide nestles against the TM domain to physically occlude the Cl – -permeation pathway. This peptide is highly conserved among species variants of CLC-2 but is not present in other CLC homologs. Previous studies suggested that the N-terminal domain of CLC-2 influences channel properties via a “ball-and-chain” gating mechanism, but conflicting data cast doubt on such a mechanism, and thus the structure of the N-terminal domain and its interaction with the channel has been uncertain. Through electrophysiological studies of an N-terminal deletion mutant lacking the 15-residue hairpin peptide, we support a model in which the N-terminal hairpin of CLC-2 stabilizes a closed state of the channel by blocking the cytoplasmic Cl – -permeation pathway.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2020

Sampling Rate Comparison for Distribution System Voltage Measurements

Measurement of the voltage delivered by an electric distribution is a relatively straight forward task. When determining the harmonic distortion in the voltage, matters associated with what orders of the 50/60 Hz harmonics to be analyzed dictate the sampling rate. A study addressing this matter is presented.

42 ENGINEERING↗
DOE OSTI2021

Evaluation of Low-Pressure-Sintered Multi-Layer Substrates for Medium-Voltage SiC Power Modules: Preprint

Direct-bonded aluminum (DBA) multi-layer substrates have been fabricated using low-pressure silver sintering. These multi-layer substrates can be used to reduce the peak electric field strength inside power modules. This benefit is particularly important for medium-voltage silicon carbide (SiC) MOSFETs due to their higher operating voltages. The voiding content and defect density of the bond used to create the multi-layer substrate stackup is critical to the thermal performance and reliability of the power module. This work two low-pressure-assisted sintering techniques; one using nano-silver preform and the other using nano-silver paste to bond 23 mm by 49 mm DBA substrates. Scanning acoustic microscopy (C-SAM) is used to evaluate the bond quality after sintering. To evaluate the reliability of the sintered multi-layer substrates, passive thermal cycling from –40 °C to 200 °C was performed. Cross-sections were cut at pre-determined intervals and imaged with Scanning Electron Microscopy (SEM). After 1,000 thermal cycles, minor cracking was observed, but no failures have occurred.

28 EE - Advanced Manufacturing Office (EE-5A)↗
DOE OSTI2021

High efficiency electrolytes for high voltage battery systems

Disclosed herein are embodiments of an electrolyte that is stable and efficient at high voltages. The electrolyte can be used in combination with certain cathodes that exhibit poor activity at such high voltages with other types of electrolytes and can further be used in combination with a variety of anodes. In some embodiments, the electrolyte can be used in battery systems comprising a lithium cobalt oxide cathode and lithium metal anodes, silicon anodes, silicon/graphite composite anodes, graphite anodes, and the like.

Ren, Xiaodi↗
DOE OSTI2021

Fault location in High Voltage Multi-terminal dc Networks Using Ensemble Learning

Precise location of faults for large distance power transmission networks is essential for faster repair and restoration process. High Voltage direct current (HVdc) networks using modular multi-level converter (MMC) technology has found its prominence for interconnected multi-terminal networks. This allows for large distance bulk power transmission at lower costs. However, they cope with the challenge of dc faults. Fast and efficient methods to isolate the network under dc faults have been widely studied and investigated. After successful isolation, it is essential to precisely locate the fault. The post-fault voltage and current signatures are a function of multiple factors and thus accurately locating faults on a multi-terminal network is challenging. In this paper, we discuss a novel data-driven ensemble learning based approach for accurate fault location. Here we utilize the eXtreme Gradient Boosting (XGB) method for accurate fault location. The sensitivity of the proposed algorithm to measurement noise, fault location, resistance and current limiting inductance are performed on a radial three-terminal MTdc network designed in Power System Computer Aided Design (PSCAD)/Electromagnetic Transients including dc (EMTdc).

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

An Inner-Loop Control Method for the Filter-less, Voltage Sensor-less, and PLL-less Grid-Following Inverter-Based Resource

This paper presents a novel inner-loop control method for the inverter-based resource (IBR). The innovative concepts include removing the voltage sensors at the point of common coupling (PCC), removing the inverter interface inductance, and removing the traditional phase-locked loop (PLL) circuits. Simulation is conducted to verify the feasibility of the method. Furthermore, the virtual impedance is applied to the control loop to improve the current THD and dynamics. Compared to the traditional control, the proposed one helps offload the system by reducing the bulky inductors and voltage sensors without compromising the control performance.

grid-forming inverter, inner-loop control, filterl↗
DOE OSTI2021

Methods and devices configured to operated scanning tunneling microscopes using out-of-bandwidth frequency components added to bias voltage and related software

In the system and method disclosed, an ultrahigh vacuum (UHV) scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from the Si(100)-2X1:H surface by injecting electrons at a negative sample bias voltage. A new lithography method is disclosed that allows the STM to operate under imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative sample bias voltage to deliver the required energy for hydrogen removal. The resulted current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM's feedback loop. This approach offers a significant potential for controlled and precise removal of hydrogen atoms from a hydrogen-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

Moheimani, Seyed Omid Reza↗
DOE OSTI2022

DERMS Online: A New Voltage Sensitivity-Enabled Feedback Optimization Framework: Preprint

This paper proposes a distributed energy resource management system (DERMS) solution by developing a new voltage sensitivity enabled feedback optimization framework. The key idea is to adopt a measurement feedback scheme to reformulate the original nonlinear optimization into a linear programming (LP) problem via perturb and observe-based voltage sensitivity analysis. The proposed solution eliminates the dependence on load knowledge and can be implemented online thanks to an efficient open-source solver for LP problems. The proposed DERMS online platform is generalizable to deal with various types of distributed energy resources (DERs), including distributed photovoltaics (PVs), energy storage, electric vehicles, demand response, etc. Comparison results with other control methods on a realistic distribution feeder in Southern California highlight the feasibility as well as benefits for the proposed framework.

distributed energy resources management↗
DOE OSTI2022

Coordinated voltage control and reactive power regulation between transmission and distribution systems

Systems and methods are described for coordinating volt-var control between sub-transmission and distribution systems. Distributed energy resources of a distribution system are aggregated into virtual power plants from which reactive power can optimally be dispatched to the sub-transmission system. A sub-transmission controller executes a volt-var AC optimal power flow optimisation function to minimize voltage fluctuations that might otherwise occur when coordinating with a distribution system having distributed energy resources. The distribution system can use a sensitivity matrix for regulating voltage at distribution feeders while fulfilling a transmission or sub-transmission system's demand requests.

Samaan, Nader A.↗
DOE OSTI2023

GUI Control System for the Mu2e Electrostatic Septum High Voltage at Fermilab

The Mu2e Experiment has stringent beam structure requirements; namely, its proton bunches with a time structure of 1.7 $\mu$s in the Fermilab Delivery Ring. This beam structure will be delivered using the Fermilab 8-GeV Booster, the 8-GeV Recycler Ring, and the Delivery Ring. The 1.7-$\mu$s period of the Delivery Ring will generate the required beam structure by means of a third order resonant extraction system operating on a single circulating bunch. The electrostatic septum (ESS) for this system is particularly challenging, requiring mechanical precision in a ultra high vacuum of 1 x 10$^-8$ Torr to generate 100 kV across 15 mm. This paper describes a graphical user interface that has been developed to automate the conditioning and commissioning process for the electrostatic septa. It is based on an interface to the Fermilab ACNET system using the ACSys Python Data Pool Manager (DPM) Client produced and maintained by Fermilab Accelerator Controls. Network interfacing between data pool managers made by the application and ACNET devices introduce an inherent (approximately 1 s) latency in throughput of the readouts. This delay is utilized to process and graph incoming data events of devices crucial to conditioning of a electrostatic septum (ESS). 'Ramping' and 'Monitoring' modes adjust settings of the power supply based on internal logic to efficaciously increase and maintain the high voltage (HV) in the ESS, easing the voltage setting on incidence of sparking or other possibly damaging events. A timestamped log file is produced as the application runs.

43 PARTICLE ACCELERATORS↗
DOE OSTI2023

Methods and devices configured to operated scanning tunneling microscopes using out-of-bandwidth frequency components added to bias voltage and related software

In the system and method disclosed, an ultrahigh vacuum (UHV) scanning tunneling microscope (STM) tip is used to selectively desorb hydrogen atoms from the Si(100)-2X1:H surface by injecting electrons at a negative sample bias voltage. A new lithography method is disclosed that allows the STM to operate under imaging conditions and simultaneously desorb H atoms as required. A high frequency signal is added to the negative sample bias voltage to deliver the required energy for hydrogen removal. The resulted current at this frequency and its harmonics are filtered to minimize their effect on the operation of the STM's feedback loop. This approach offers a significant potential for controlled and precise removal of hydrogen atoms from a hydrogen-terminated silicon surface and thus may be used for the fabrication of practical silicon-based atomic-scale devices.

Moheimani, Seyed Omid Reza↗
DOE OSTI2023

High voltage switch with cascaded transistor topology

A switching apparatus includes three or more series-connected transistors, and it further includes a balancing network. The balancing network includes a resistor network configured to divide a voltage from a voltage source across the series-connected transistors. The resistor network includes at least two resistive legs connected in parallel. In each resistive leg, two or more resistors are connected in series. The balancing network may further comprise at least one capacitive leg of series-connected capacitors connected across the series-connected transistors, and it may further comprise at least one leg of series-connected avalanche diodes connected across the series-connected transistors for overvoltage protection. In example embodiments, the series-connected transistors are JFETs. In other example embodiments, the series-connected transistors may be HEMTs or GaN transistors.

Gill, Lee↗
DOE OSTI2024

System and method for power converter interfacing with multiple series-stacked voltage domains

According to various embodiments, a power conversion circuit is disclosed. The power conversion circuit includes at least one DC bus. The power conversion circuit further includes a plurality of DC-AC conversion units coupled to the DC bus and configured to convert a DC voltage into an AC voltage. The power conversion circuit also includes a multi-winding transformer comprising a magnetic core and a plurality of windings, where each DC-AC conversion unit is coupled to a corresponding winding of the multi-winding transformer.

Chen, Minjie↗