Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “TiN”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Controlling structural phases of Sn through lattice engineering

Topology and superconductivity, two distinct phenomena, offer unique insight into quantum properties and their applications in quantum technologies, spintronics, and sustainable energy technologies. Tin (Sn) plays a pivotal role here as an element because of its two structural phases, α-Sn exhibiting topological characteristics and β-Sn showing superconductivity. Here, we demonstrate precise control of these phases in Sn thin films using molecular beam epitaxy with systematically varied lattice parameters of the buffer layer. The Sn films exhibit either β-Sn or α-Sn phases as the buffer layer's lattice constant varies from 6.10 Å to 6.48 Å, spanning the range from GaSb (like InAs) to InSb. Further, the crystal structures of α- and β-Sn films are characterized by x-ray diffraction and confirmed by Raman spectroscopy and scanning transmission electron microscopy. Atomic force microscopy validates the smooth, continuous surface morphology. Electrical transport measurements further verify the phases: resistance drop near 3.7 K for β-Sn superconductivity and Shubnikov-de Haas oscillations for α-Sn topological characteristics. Density functional theory shows that α-Sn is stable under tensile strain and β-Sn under compressive strain, aligning well with experimental findings. Hence, this study introduces a platform controlling Sn phases through lattice engineering, enabling innovative applications in quantum technologies and beyond.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Electronic structure and exchange interactions in altermagnetic MnGeP 2 in the quasiparticle self-consistent G W approach

The quasiparticle self-consistent 𝐺⁡𝑊 method is used to study the electronic band structure, optical dielectric function, and exchange interactions in chalcopyrite, 𝐼⁢ ‾ 4 ⁢2⁢𝑑, structure MnGeP 2 . The material is found to be an antiferromagnetic semiconductor with a lowest direct gap of 2.44 eV at the Γ point and a lower indirect gap of 1.87 eV from Γ to 𝑀. The material is an altermagnet because the two magnetic atoms of opposite spin are related by a twofold rotation operation perpendicular to the main fourfold rotation inversion axis. The spin splittings along a low symmetry line like 𝑃⁢𝑁 is sizable while at k points on the diagonal mirror planes or on the twofold symmetry axes the spin splitting is zero. The exchange interactions are calculated using a linear response approach. The antiferromagnetic exchange interaction between nearest neighbors in the primitive unit cell is dominating and found to be slightly decreasing upon carrier doping but not sufficiently to change the interaction to become ferromagnetic. The bare (noninteracting) and interacting transverse spin susceptibilities, which provide interatomic site exchange interactions after averaging over the muffin-tin spheres, are calculated from the 𝐺⁡𝑊 band structure and wave functions. From these exchange interactions, the spin wave spectra are obtained along the high symmetry lines and the Néel temperature is calculated using the mean-field and Tyablikov estimations. The dielectric function and the optical absorption spectra are calculated including excitonic effects using the Bethe Salpeter equation. The exchange interactions around Mn Ge defect sites is also studied. While we find it can generate ferromagnetic interactions with neighboring spins, we did not find direct evidence of producing an overall ferromagnetic phase. First, if Mn antisites are introduced by exchanging Mn with a nearby Ge, the interactions stay largely antiferromagnetic. Second, when we add additional Mn, in other words in Mn-rich stoichiometry, the Mn Ge antisites produce a strong ferromagnetic interaction primarily with the Mn in the same basal plane but weaker ferromagnetic interaction with adjacent plane Mn. The interactions between regular lattice Mn stay antiferromagnetic as before and thus favor keeping the antiferromagnetic order along the [001] direction. Adding Mn antisites, however, does lead to a metallic band structure.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Optimization of Structurally Enhanced Solder Transient Liquid Phase Bonding

High temperature packaging technologies are a necessity for high temperature capable devices. SAC305 solder has an operational limit of 174°C imposed by creep effects which aligns well with current junction temperature limits of 175°C. Wide band gap semiconductor materials have the potential to reach junction temperatures of up to 800°C that are not currently attainable with significant reliability. Capitalizing on this potential will requires substrates and attachments that can operate well beyond the current 175°C standard. Silver sintering pastes have received widespread interest as a high temperature attachment alternative. However, the process requires high pressure bonding in an inert environment to achieve acceptable bond quality. Transient liquid phase (TLP) sintering is capable of good bond quality without pressure requirements but suffers from low thermal conductivity and only slightly reduced cost compared to silver sintering. SAC305 solder contains the same constituent materials for TLP as available copper-tin TLP sintering paste. By introducing engineered surface structures into the bond, intermetallic formation can be accelerated producing a bond similar to TLP sintering but in an ambient environment and for reduced cost. While this process has been demonstrated, it has not yet been optimized. Currently bonds are formed using a 75 μm stencil on substrate surface structures 24 μm tall, covering 19% of the bonding area. The process takes about 4 hours not including the formation of surface structures. Here, this study will center on the effects of stencil thickness and coating methods. Samples will be analyzed by scanning acoustic microscopy, die shear testing and cross sectional scanning acoustic microscopy.

42 ENGINEERING↗
DOE OSTI2022

How Optical and Electrical Properties of ITO Coated Willow Glass Affect Photonic Curing Outcome for Upscaling Perovskite Solar Cell Manufacturing

Indium tin oxide (ITO) coated Willow® glass is an excellent substrate for roll-to-roll manufacturing of perovskite solar cells (PSCs) but can have large variability in its optical and electrical properties. Photonic curing uses intense light pulses instead of heat to process materials and can facilitate faster processing speeds in roll-to-roll manufacturing to upscale the production of PSCs. Since the entire film stack can absorb light and contributes to the photonic curing outcome, the substrate materials’ properties play an integral role. Furthermore, we present the effect of ITO transmittance on the photonic curing of nickel nitrate sol-gel precursors into nickel oxide and consequently the performance of PSCs fabricated with only photonic curing and no thermal annealing. Unexpectedly, ITO samples processed by photonic curing show improved optical and electrical properties.

14 SOLAR ENERGY↗
DOE OSTI2020

Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics

A thin layer of Al 2 O 3 at the back of CdSe x T e1-x /CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p + amorphous silicon layer behind the Al 2 O 3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al 2 O 3 , amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl 2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage.

14 SOLAR ENERGY↗
DOE OSTI2020

Oxidative Segregation of Group V Dopants in CdTe Solar Cells

Transparent conductive oxides are used in many technologies and it is important to understand their interfacial chemical reactions. Here, we use recently developed thermomechanical cleaving and X-ray photoelectron spectroscopy to probe oxidation states at the SnO 2 interface of CdTe solar cells. We show that tin oxide promotes the formation of nanometer-scale oxides of tellurium and sulfur, largely during CdCl 2 /O 2 activation. Surprisingly, in copper-doped devices, relatively low temperature anneals (180-260 degrees C) to diffuse and activate copper acceptors also cause significant oxidation changes at the front interface, providing a heretofore missing aspect of how back contact processes can modify device transport, recombination, and performance. For Group V-doped devices, this same oxidation process causes segregation of the dopants to the SnO 2 interface in their oxidized states, implying that adjacent regions in the absorber have been depleted of dopants. Intriguingly, we demonstrate that because of their layered, van der Walls-bonded crystal structure, spatially segregated Group V oxides may represent a mechanically weak layer in a finished device.

14 SOLAR ENERGY↗
DOE OSTI2021

High-Photovoltage All-Perovskite Tandem Solar Cells for Photovoltaic-Electrolysis Water-Splitting Applications

Monolithic perovskite/perovskite tandem solar cells have attracted substantial attention owing to their promise for high power conversion efficiency (PCE) and low fabrication cost. Conventional all-perovskite tandem solar cells employ a mixed tin (Sn)-lead (Pb) low-bandgap subcell, which suffers from instability issues in the ambient air. Here, we fabricate two-terminal perovskite/perovskite tandem solar cells consisting of two solution-processed perovskite subcells based on the more airstable pure Pb-based perovskites. The champion perovskite tandem cell exhibits a PCE of 19.2% with a high open-circuit voltage of 2.15 V. We further demonstrate photovoltaicelectrolysis (PV-EC) water-splitting applications using these high-photovoltage all-perovskite tandem solar cells.

metal halide perovskite↗
DOE OSTI2021

Proton Radiation Tolerance of Wide and Narrow Band Gap Perovskite Solar Cells

Two different single junction mixed organic-inorganic halide perovskite solar cells (PSCs) were assessed for their tolerance to high energy proton radiation. Both the narrow band gap mixed tin-lead iodide and wide band gap lead iodide-bromide show remarkable tolerance for fluences up to 1x10 11 p/cm 2 . Both materials show a retention of open circuit voltage and decrease in dark current densities indicating minimal effect on SRH recombination that typically plagues traditional III-V based solar cells. Additionally, a control device that was processed without the perovskite absorber layer showed better diode characteristics and lower dark current densities after proton irradiation. The tolerance of these perovskite as a class of materials is promising for multijunction tandem flexible photovoltaic devices.

perovskite↗
DOE OSTI2021

Copper Electrode on Flexible Substrate by Intense Pulsed Light Sintering of Microsized Copper Particles

Metal electrodes deposited in a grid pattern onto flexible polymer substrates have been shown to be a viable alternative to replace indium tin oxide (ITO) as the transparent anode for organic photovoltaics. copper may be a better alternative in terms of cost and stability for large area low-cost solar modules, specifically on roll-to-roll platforms. These customized electrode patterns can be fabricated from copper nanoparticles through various printing techniques applicable to solution phase processing. The Intense Pulsed Light (IPL) technique has been used to sinter copper nanoparticles (~100nm) to fabricate conductive copper electrodes on flexible polymer substrates. However, compared to nanosized (~100 nm) copper particles, microsized (~2 um) copper is much cheaper. In this work, microsized (~2 um) copper is used to produce high conductive copper inks. The conductivity of the print can be adjusted through the use of surfactant. IPL sintering was optimized to obtain high conductivity copper films. In conclusion, several microscopic and electrical spectroscopic characterization techniques such as scanning electron microscopy (SEM), x-ray diffraction (XRD), 4-point probe resistivity measurements were employed to characterize the copper electrodes.

14 SOLAR ENERGY↗
DOE OSTI2020

Photonic Curing Enabling High-Speed Processing for Perovskite Solar Cells

The thermal annealing step is the bottleneck to high-throughput manufacturing of perovskite solar cells. In this work, we investigate photonic curing to replace thermal annealing for the sol gel NiO hole transport layer. Using solar cell device current density-voltage performance as a metric, we compare the effects of thermal annealing and photonic curing on the conversion of sol gel NiO films deposited on top of indium tin oxide coated Willow® glass substrates. The significant reduction in processing time validates photonic curing as the enabling tool for high-speed manufacturing.

Xu, Weijie↗
DOE OSTI2023

SnO2 Buffer Layers for High Efficiency CdSeTe/CdTe Devices

SnO2 buffer layers of different thickness were deposited onto TEC 15 Fluorine doped tin oxide coated glass substrates using rf magnetron sputtering. The buffer layers were then incorporated into Cu-doped CdSeTe/CdTe devices using a range of CdCl 2 activation treatments and CuCl2 annealing temperatures to determine the effects of buffer layer thickness on device performance. Results show that all devices fabricated with thinner buffer layers resulted in much better J - V characteristics than their thicker counterparts. This was mainly due to a reduced open-circuit voltage (Voc) when using thicker buffer layers. The best device produced a conversion efficiency of 16.59%, fill factor of 71.62%, Jsc of 28.44 mA/cm 2 and Voc of 814.23 mV.

buffer layers↗
DOE OSTI2026

Microwave Vortex Motion Characterization of Nb$_{3}$ Sn Coatings for Applications in High Magnetic Fields

In this work, microwave measurements carried out in dielectric-loaded resonators exposed to high magnetic fields are exploited to yield the surface impedance of Nb$_3$ Sn superconducting coatings deposited via two different techniques: vapor tin diffusion, and DC magnetron sputtering. The obtained data lead to qualitative interpretations on both the Nb$_3$ Sn superconducting properties, and vortex-dynamics and pinning, of each coating separately, as well as simple distinctive features when comparing those. When examining the respective surface impedances at varying field, it is expected that the studied films perform at substantially diverse magnitudes of flux-flow resistivity, but also in well-differentiated pinning regimes, yet the obtained surface resistances of both samples are comparable, thus demonstrating that there is room for film optimization at the expense of certain compromise between the parameters involved.

Nb3Sn↗
DOE OSTI2020

Surface plasmon driven near- and midinfrared photoconductivity in ligand-free ITO nanocrystal films

Semiconductor nanocrystals (NCs) offer exciting opportunities to deploy infrared optoelectronic technology in a variety of applications that are off-limits to conventional single-crystalline materials. However, the performance and stability of state-of-the-art NC-based devices strongly depend on the details of the NC surface and its passivating ligands. Here, the authors use indium tin oxide NC films stripped of organic ligands and conformally coated with Al 2 O 3 to show that absorption enabled by infrared localized surface plasmon resonances permit infrared photoconduction. For Au electrodes, these metallic NC films exhibit stable photoconductive performance over months in ambient and under electrical stress.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Low-temperature electrical properties and barrier inhomogeneities in ITO/β-Ga2O3 Schottky diode

This study reports the electronic properties of the indium tin oxide (ITO)/β-Ga2O3 Schottky diode through the temperature (50–320 K)-dependent current density–voltage, capacitance–voltage, and admittance spectroscopy experiments. The room-temperature turn-on voltage of the ITO/β-Ga2O3 diode was observed to be 0.83 V, and it exhibited a slow increase with decreasing temperature. The ITO/β-Ga2O3 diode's ideality factor (n) varied from 3.92 to 1.05, and the zero-bias Schottky barrier height (φbo) varied from 0.31 to 1.28 eV. The temperature-dependent n and φbo indicate the spatial inhomogeneities of the potential barrier at the Ga2O3-ITO interface. We exploit the Gaussian distribution model to explain the Schottky barrier inhomogeneities, which could be associated with the defects observed by the admittance spectroscopy method.

Engineering↗
DOE OSTI2024

Magneto-transport study on Sn-rich Sn 1–x Ge x thin films enabled by CdTe buffer layer

α-Sn, generally known as gray tin, has attracted significant scientific interest due to its potential to host novel topological phases. Studying the transport properties of α-Sn thin films grown on the InSb substrate has been challenging, as the InSb substrate also significantly contributes to the transport properties. In this article, we report a novel approach to epitaxially grow α-Sn thin films on an InSb substrate with a resistive buffer layer of CdTe. Thin films of α–Sn 1–x Ge x (x = 0, 0.025) alloy of 15 nm thickness have been grown using molecular beam epitaxy. The high quality of the samples has been determined through high-resolution x-ray diffraction. The CdTe buffer layer has high resistance and acts as an insulating virtual substrate, which significantly suppresses contribution from InSb. Magnetotransport measurements show clear Shubnikov–de Hass oscillations in α–Sn 1–x Ge x (x = 0, 0.025) thin films. A change in oscillation frequency is observed upon alloying with Ge, implying a modification in the electronic structure and demonstrating the effectiveness of the CdTe buffer layer approach. Furthermore, this work provides a new approach that enables the electronic transport characterization of the α–Sn 1–x Ge x alloy system, which enables the study of the topological quantum states using electronic transport and their device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Ab Initio Transport Calculations: From Normal to Superconducting Current

Applying the Bogoliubov-de Gennes equations with density-functional theory, it is possible to formulate first principles description of current-phase relationships in superconducting/normal (magnetic)/superconducting tri-layers. Such structures are the basis for the superconducting analog of Magnetoresistive random access memory devices (JMRAM). In a recent paper1 we presented results from the first attempt to formulate such a theory, applied to the Nb/Ni/Nb trilayers. In the present work we provide computational details, explaining how to construct key ingredient (scattering matrices SN ) in a framework of linear muffin-tin orbitals (LMTO).

CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS↗
DOE OSTI2025

Scalable fabrication of Chip-integrated 3D-nanostructured electronic devices via DNA-programmable assembly

DNA-based self-assembly methods have demonstrated powerful and unique capabilities to encode nanomaterial structures through the prescribed placement of inorganic and biological nanocomponents. However, the challenge of selectively growing DNA superlattices on specific locations of surfaces and their integration with conventional nanofabrication has hindered the fabrication of three-dimensional (3D) DNA-assembled functional devices. Here, we present a scalable nanofabrication technique that combines bottom-up and top-down approaches for selective growth of 3D DNA superlattices on gold microarrays. This approach allows for the fabrication of self-assembled 3D-nanostructured electronic devices. DNA strands are bound onto the gold arrays, which anchor DNA origami frames and promote ordered framework growth on the specific areas of the surface, enabling control of the lateral placement and orientation of superlattices. DNA frameworks selectively grown on the pads are subsequently templated to nanoscale silica and tin oxide (SnO x ) that follow the architecture, as confirmed by structural and chemical characterizations. The fabricated SnO x superlattices are integrated into devices that demonstrate photocurrent response.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Universal progression of structure and dynamics in colloidal nanocrystal gels during salt-accelerated aging

Controlling the structure and function of colloidal gels requires a detailed understanding of how the various components govern network formation and aging. In particular, molecular additives like salts are widely used to tune interparticle interactions, yet their influence on gelation pathways in complex systems such as colloidal nanocrystal gels remains inadequately understood. Here, we investigate how noncoordinating salts modulate the evolution of gels formed using chemically linked tin-doped indium oxide nanocrystals. Through combined structural, dynamic, and kinetic analyses, we demonstrate that increasing salt concentration accelerates gelation. When rescaled by salt-dependent characteristic times, the evolution collapses onto universal trajectories, revealing a time-salt superposition principle. The universality extends across length scales, suggesting a consistent salt-dependent mechanism that controls both local structuring and macroscopic network formation. This observed salt modulation of structure and dynamics provides a predictive basis for controlling the kinetics of nonequilibrium nanocrystal gel assembly, enhancing the rational design of functional nanomaterials with tunable properties.

36 MATERIALS SCIENCE↗