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At least 595 records · Page 33

The thin film microwave iris

Development of waveguide iris for microwave coupling applications using thin film techniques is discussed. Production process and installation of iris are described. Iris improves power transmission properties of waveguide window.

Ramey, R. L.↗

Preparation of thin film silver fluoride electrodes from constituent elements

The feasibility of preparing thin-film metal fluoride electrodes from the elemental constituents has been demonstrated. Silver fluoride cathodes were prepared by deposition of silver on a conducting graphite substrate followed by fluorination under controlled conditions using elemental fluorine. The resulting electrodes were of high purity, and the variables such as size, shape, and thickness were easily controlled.

Odonnell, P. M.↗

Failure analysis of thin-film amorphous-silicon solar-cell modules

A failure analysis of thin film amorphous silicon solar cell modules was conducted. The purpose of this analysis is to provide information and data for appropriate corrective action that could result in improvements in product quality and reliability. Existing techniques were expanded in order to evaluate and characterize degradational performance of a-Si solar cells. Microscopic and macroscopic defects and flaws that significantly contribute to performance degradation were investigated.

Kim, Q.↗

Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition

Thin-film Ge single crystals (approx. 10 microns) have been epitaxially grown on polished NaCl(100) substrates at 450C by using plasma-enhanced chemical vapor deposition. Films on approximately 1 sq cm and larger were separated from the NaCl by either melting the salt or by differential shear stress upon cooling to room temperature. The ordered growth of the Ge was found to be most sensitive to the initial plasma power and to the continuum flow dynamics within the carbon susceptor. The films were visually specular and exhibited a high degree of crysalline order when examined by X-ray diffraction. The films were found to be p-type with a carrier concentration of approximately 3 x 10 to the 16th power/cu cm, a resistivity of 0.11 ohm-cm, and a Hall hole mobility of 1820 sq cm/v/s at room temperature. Vacuum firing minimized the primary contaminant, Na, and corresponding lowered the carrier concentration to 4 x 10 to the 14th power/cu cm.

Outlaw, R. A.↗

Computer simulation of thin-film nucleation and growth - The multilayer mode

The computer simulation of thin-film nucleation and growth, which was previously performed for the case of single monolayer, has been extended to the case of multilayer growth. The simulation results show that the kinetics of multilayer growth is nearly identical to that of monolayer growth. The cluster density resulting from the multilayer mode is similar to that resulting from the monolayer mode at low coverage. At high coverage, multilayer growth results in substantially higher cluster density than that resulting from monolayer growth.

Salik, J.↗

Development of tandem cells consisting of GaAs single crystal and CuInSe2/CdZnS polycrystalline thin films

The tandem cells consisting of GaAs single crystal and CuInSe2 polycrystalline thin films are being developed under the joint program of the Boeing Co. and Kopin Corp. to meet the increasing power needs for future spacecraft. The updated status of this program is presented along with experimental results such as cell performance, and radiation resistance. Other cell characteristics including the specific power of and the interconnect options for this tandem cell approach are also discussed.

Kim, Namsoo P.↗

Proposed acceptance, qualification, and characterization tests for thin-film PV modules

Details of a proposed test program for PV thin-film modules which the Department of Energy has directed the Solar Energy Research Institute (SERI) to prepare are presented. Results of one of the characterization tests that SERI has performed are also presented. The objective is to establish a common approach to testing modules that will be acceptable to both users and manufacturers. The tests include acceptance, qualification, and characterization tests. Acceptance tests verify that randomly selected modules have similar characteristics. Qualification tests are based on accelerated test methods designed to simulate adverse conditions. Characterization tests provide data on performance in a predefined environment.

Waddington, D.↗

Thin film thermocouples for high temperature turbine application

The objective is to develop thin film thermocouples (TFTC) for Space Shuttle Main Engine (SSME) components such as the high pressure fuel turbopump (HPFTP) blades and to test TFTC survivability and durability in the SSME environment. The purpose for developing TFTC's for SSME components is to obtain blade temperatures for computational models developed for fluid mechanics and structures. The TFTC must be able to withstand the presence of high temperature, high pressure hydrogen as well as a severe thermal transient due to a cryogenic to combustion temperature change. The TFTC's will eventually be installed and tested on SSME propulsion system components in the SSME test bed engine. The TFTC's were successfully fabricated on flat coupons of MAR-M 246 (Hf+), which is the superalloy material used for HPFTP turbine blades. The TFTC's fabricated on flat coupons survived thermal shock cycling as well as testing in a heat flux measurement facility which provided a rapid thermal transient. The same fabrication procedure was used to deposit TFTC's on HPFTP first stage rotor blades. Other results from the experiments are presented, and future testing plans are discussed.

Martin, Lisa C.↗

Low temperature phase formation of Tl-based superconducting thin films in reduced oxygen atmosphere

Tl-Ba-Cu-Cu-O superconducting thin films were prepared by magnetron sputtering with postannealing in a reduced oxygen atmosphere. Single-phase Tl2Ba2Ca2Cu3O(x) can form on the MgO substrate at 800 C under P(O2) about 0.1 atm. However the phase formation temperature can be affected by the starting composition of the film. Tl1Ba2Ca2Cu3O(x) phase can be formed by simply lowering the Tl2O pressure. The thermal stability of Tl1Ba2Ca2Cu3O(x) phase was studied by resistivity measurements at high temperatures.

Wu, C. Y.↗

Microwave properties and characterization of co-evaporated BSCCO thin films

An extensive characterization of Bi-Sr-Ca-Cu-O (BSCCO) thin films deposited by co-evaporation on LaAlO3 and SrTiO3 substrates was performed. The films had a T(sub c) (R = O) of approximately 78 K, and were predominantly c-axis oriented, with critical current densities (J(sub c)) at 4.5 K of 1.6 x 10(exp 6) and 1.1 x 10(exp 6) A cm(sup -2), for the samples on SrTiO3 and LaAlO3, respectively. The microwave properties of the films were examined by three techniques. The complex conductivity sigma(sub *) = sigma(sub 1) - j(sigma(sub 2)) and the magnetic penetration depth (A) were measured by power transmission at 30.6 GHz; the surface resistance (R(sub s)) was measured using a cavity resonator at 58.9 GHz, and the transmission line losses were determined by measuring the quality factor (Q) of a linear microstrip resonator at 10.4 and 20.2 GHz. The complex conductivity for the film on LaAlO3 was determined to be (2.0-j10) x 10(exp 5) S/m at 77 K. It was observed that in the superconducting state sigma(sub 1) deviates from both the Bardeen-Cooper-Schrieffer (BCS) theory and the two-fluid model. Values of lambda were found to be approximately 2.0 and 1.1 microns at 77 K and 20 K respectively, and were obtained for the film on LaAlO3. The value of lambda at 20 K was approximately three times larger than that of BSCCO single crystals. R(sub s) values of 865 and 1391 mOmega were obtained for the films on SrTiO3 and LaAlO3, respectively, at 77 K and 58.9 GHz. Unloaded Q factors at 20 K of approximately 1100 and 800 at 10.4 and 20.2 GHz respectively, were measured for the BSCCO resonator. Unloaded Q values of 290 and 405 at 20 K were obtained at 10.4 GHz and 20.2 GHz respectively, for an all gold (Au) resonator.

Miranda, F. A.↗

Thin Film Heat Flux Sensor of Improved Design

A new design for a thin film heat flux sensor is presented. It is easier to fabricate than previous designs, for a given heat flux has an order of magnitude larger signal, and is more easily scalable than previous designs. Transient and steady state data are also presented.

Fralick, Gus↗

Dual Input AND Gate Fabricated From a Single Channel Poly (3-Hexylthiophene) Thin Film Field Effect Transistor

A regio-regular poly (3-hexylthiophene) (RRP3HT) thin film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. This device demonstrates AND logic functionality. The device functionality was controlled by applying either 0 or -10 V to each of the gate electrodes. When -10 V was simultaneously applied to both gates, the device was conductive (ON), while any other combination of gate voltages rendered the device resistive (OFF). The p-type carrier charge mobility was about 5x10(exp -4) per square centimeter per V-sec. The low mobility is attributed to the sharp contours of the RRP3HT film due to substrate non-planarity. A significant advantage of this architecture is that AND logic devices with multiple inputs can be fabricated using a single RRP3HT channel with multiple gates.

Pinto, N. J.↗