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At least 595 records · Page 33

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DOE OSTI2017

Multi-planed unified switching topologies

An apparatus and method for extending the scalability and improving the partitionability of networks that contain all-to-all links for transporting packet traffic from a source endpoint to a destination endpoint with low per-endpoint (per-server) cost and a small number of hops. An all-to-all wiring in the baseline topology is decomposed into smaller all-to-all components in which each smaller all-to-all connection is replaced with star topology by using global switches. Stacking multiple copies of the star topology baseline network creates a multi-planed switching topology for transporting packet traffic. Point-to-point unified stacking method using global switch wiring methods connects multiple planes of a baseline topology by using the global switches to create a large network size with a low number of hops, i.e., low network latency. Grouped unified stacking method increases the scalability (network size) of a stacked topology.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2018

Triaxial photoconductive switch module

Methods, systems, and devices describe triaxial photoconductive switch modules that include a center conductor, an inner conductor, an outer conductor, a high voltage capacitor that is formed between the center conductor and the inner conductor, and a photoconductive switch that is formed between the center conductor and a section of the outer conductor. The disclosed triaxial photoconductive switch modules include low inductance current paths that lead to high current efficiencies. Furthermore, the disclosed triaxial photoconductive switch modules eliminate or reduce parasitic capacitance problems of existing systems.

42 ENGINEERING↗

DOE OSTI2019

Ferroelectric opening switch

A ferroelectric opening switch is enabled by controlled polarization switching via nucleation in a ferroelectric material, such as BaTiO3, Pb(Zr,Ti)O3, LiNbO3, LiTaO3, or variants thereof. For example, nucleation sites can be provided by mechanical seeding, grain boundaries, or optical illumination. The invention can be used as an opening switch in large scale pulsed-power systems. However, the switch can also be used in compact pulsed-power systems (e.g., as drivers for high power microwave systems), as passive fault limiters for high voltage dc (HVDC) systems, and/or in other high power applications.

30 DIRECT ENERGY CONVERSION↗

DOE OSTI2019

Triaxial photoconductive switch module

Nelson, Scott D.↗

DOE OSTI2021

Smart controller with phantom inductor current sensing for switched mode power supplies

Voltage on the output terminal of an inductor is obtained as a first input signal to a control block (CB); the inductor has an input terminal connected to a power switch and driver block at a switching node. A sense input voltage is obtained on an output terminal of a sensing circuit that is not directly connected to the switching node, as a second input signal to the CB. A voltage is generated on a first output terminal of the CB and is selected such that the CB can use its first and second input signals to infer the current through the inductor. A pulse width modulation (PWM) signal is generated on a second output terminal of the CB, based on the inferred current through the inductor; the second output signal from the CB is provided to a PWM input terminal of the power switch and driver block.

Zhang, Xin↗

DOE OSTI2024

High-power electrically tunable switch

A high-voltage switch, whose operation leverages the speed of electrons to generate the “on” time of the pulse in combination with the speed of light to generate the “off” time of the pulse, is described. In one example, the high-voltage switch includes a first electrode, a second electrode spaced apart from the first electrode, a region of non-absorbing material occupying a portion of the space between the first and second electrodes and allowing a laser pulse to propagate therethrough without substantial absorption, and a region of absorbing material occupying another portion of the space and producing a charged particle cloud upon receiving the laser pulse. The high-voltage switch remains “on” upon the charged particle cloud reaching an electrode and until it has been collected by the electrode, and where the high-voltage switch remains “off” subsequent to the collection and until another generated charged particle cloud reaches the electrode.

Voss, Lars↗

DOE OSTI2024

Thermal diode and thermal switch for bi-directional heat transfer in building envelopes

The present disclosure relates to a directional heat transfer using thermal control devices, including a dual phase change thermal diode and an active contact-based thermal switch. The thermal diode includes a positive temperature coefficient switching material and a negative temperature coefficient switching material arranged in series. The thermal switch includes two thermally conducting surfaces which may be moved to contact (i.e., having a distance between them of substantially zero) creating minimal thermal contact resistance. Both thermal control devices may be used to control heat flow into and/or out of a building.

Kishore, Ravi Anant↗

DOE OSTI2014

A new time calibration method for switched-capacitor-array-based waveform samplers

Here we have developed a new time calibration method for the DRS4 waveform sampler that enables us to precisely measure the non-uniform sampling interval inherent in the switched-capacitor cells of the DRS4. The method uses the proportionality between the differential amplitude and sampling interval of adjacent switched-capacitor cells responding to a sawtooth-shape pulse. In the experiment, a sawtooth-shape pulse with a 40 ns period generated by a Tektronix AWG7102 is fed to a DRS4 evaluation board for calibrating the sampling intervals of all 1024 cells individually. The electronic time resolution of the DRS4 evaluation board with the new time calibration is measured to be ~2.4 ps RMS by using two simultaneous Gaussian pulses with 2.35 ns full-width at half-maximum and applying a Gaussian fit. The time resolution dependencies on the time difference with the new time calibration are measured and compared to results obtained by another method. Ultimately, the new method could be applicable for other switched-capacitor-array technology-based waveform samplers for precise time calibration.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2019

Simultaneous mode locking and Q-switching in a solid-state laser with a travelling-wave acousto-optic modulator and retroreflector

This paper presents a numerical study of the dynamics of a mode-locked, Q-switched laser whose cavity contains a travelling-wave acousto-optic modulator (AOM) and a retroreflector which returns the zeroth- and first-order diffracted waves to the AOM. The reflectivity of the retroreflector depends on the order of diffraction. If the AOM is switched on once or periodically, lasing is characterised by a pulse train frequency sweep. Keeping the AOM constantly switched on leads to self-oscillations. Their characteristics can be controlled by varying the detuning of the operating frequency of the modulator from resonance. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2020

Soft Switching Over the Entire Line Cycle for a Quadruple Active Bridge DCX in a DC to Three-Phase AC Module

This paper is focused on a transformer-isolated quadruple active bridge (QAB) dc-dc converter loaded by three full-bridge dc-ac inverters. The QAB functions as a "DC trans-former" (DCX) in the dc-to-three-phase ac module. The QAB outputs provide time-varying power at twice the line frequency, which presents challenges in maintaining zero voltage switching (ZVS) on the secondary sides during low-power portions of the line cycle. It is shown how ZVS can be achieved in a phase, even at zero-power transfer, using a relatively small circulating current provided by the magnetizing inductance of the high-frequency transformer. The approach is particularly effective in high-voltage applications using SiC MOSFETs, where reductions in switching loss outweigh additional conduction losses due to the circulating currents. A detailed analysis of ZVS switching waveforms at the zero power transfer is presented, including effects of nonlinear device capacitances. Analytical expressions are given for the optimal values of the magnetizing inductance and dead times of the QAB primary and secondary bridges. The approach is verified by experimental results on a 600 V, 4 kW prototype, demonstrating greater than 98.5% efficiency from 1 kW to 4 kW, with a peak efficiency of 99.0%. Compared to conventionally operated prototype, a 54% reduction in total loss is achieved at rated power.

41 EE - Solar Energy Technologies Office (EE-4S)↗

DOE OSTI2022

High-Speed and High-Power Ferroelectric Switching Current Measurement Instrument for Materials with Large Coercive Voltage and Remanent Polarization

A high-speed and high-power current measurement instrument is described for measuring rapid switching of ferroelectric samples with large spontaneous polarization and coercive field. Instrument capabilities (±200 V, 200 mA, and 200 ns order response) are validated with a LiTaO 3 single crystal whose switching kinetics are well known. The new instrument described here enables measurements that are not possible using existing commercial measurement systems, including the observation of ferroelectric switching in large coercive field and large spontaneous polarization Al 0.7 Sc 0.3 N thin films.

30 DIRECT ENERGY CONVERSION↗

DOE OSTI2023

Tailoring Mid–Gap States of Chalcogenide Glass by Pressure–Induced Hypervalent Bonding Towards the Design of Electrical Switching Materials

Phase change memory (PCM) and ovonic threshold switching (OTS) materials using chalcogenide glass are essential elements in advanced 3D memory chips. The mid–gap states, induced by the disorder and defects in the glass, are the physical mechanisms of the electrical switching behavior, while the origin of these trap states is still under debate and the medium–range clusters that break the global octet rule, such as over–coordinated atoms, are known to be responsible in various glass. Here, it is discovered that a large fraction of over–coordinated clusters fails to generate mid–gap states, which are probably caused by hypervalent bonding, a multi–centered covalent bond participated by delocalized lone–pair electrons. This is confirmed by the pressure–driven simulations of amorphous GeSe models, in which it is found that octahedral motifs and hypervalent bonds prevent the over–coordinated medium–range clusters from providing excessive electrons. In practical applications, compatible dopants can be used to change the number of hypervalent bonds, thus controlling the number of mid–gap states and consequently the performance of PCM and OTS materials. Finally, these results reveal the origin of mid–gap states in chalcogenide glasses, enabling extensive control in the development of pioneering electrical switching materials.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Ultra-Fast Non-Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing

Low-current multilevel programmability with inherent non-volatility and high stability of resistance states is required for both multi-bit memory storage and deep learning accelerators but is difficult to achieve. Here, in a resistive switching system, this work realizes >512 (>9 bits) distinct non-volatile conductance levels with stable retention for each state with current levels down to the nanoampere range, highly promising for potential integration with small processing nodes with ultra-low power consumption requirements. This is achieved by demonstrating a new thin film design concept that encompasses three key features: an ultra-thin epitaxial oxygen ionic switching layer that provides a tunable energy barrier at the bottom electrode, an overcoat amorphous layer that acts as an ion migration barrier for stable state retention, and a partial conductive filament as a localized electronic transport channel to the epitaxial switching layer. A large dynamic resistance range of up to seven orders of magnitude is achieved with reset-free transitions among intermediate states, and programmability is demonstrated with ultra-fast (20 ns) pulses. Artificial neural network (ANN) simulations, based on the experimental performance and its non-idealities, demonstrate close-to-ideal inference accuracies for various Modified National Institute of Standards and Technology (MNIST) data sets.

36 MATERIALS SCIENCE↗

DOE OSTI2019

Stable Metallic Enrichment in Conductive Filaments in TaO x –Based Resistive Switches Arising from Competing Diffusive Fluxes

Oxide–based resistive–switching devices hold promise for solid–state memory technology. Information encoding is accomplished by electrically switching the device between two nonvolatile states with low and high resistance states (LRS/HRS). It is generally accepted that the change between these states is due to the motion of oxygen vacancies forming a continuous (LRS) or gapped (HRS) filament between the electrodes. Direct assessments of filaments are rare due to their small size and the difficulty of locating the filament. Electron microscopy experiments reveal the filament structure and chemistry in TaO 2.0 ± 0.2 –based 150 × 150 nm 2 devices with cross–sectional geometry after forming with power dissipation lower than 1 mW. The filaments appear to be roughly hourglass–shaped with a diameter of less than 10 nm and are composed of Ta–rich and O–poor mostly amorphous material with local compositions as Ta–rich as TaO 0.4 . The as–formed HRS has a gap up to 10 nm wide located next to the anode and composed of nearly stoichiometric TaO 2.5 . The tantalum and oxygen distribution is consistent with filaments formed by the motion of both Ta and O driven by temperature gradients (Soret effect) and an electric field. As a result, this interpretation points towards a new compact model of resistive–switching devices.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Rational Control of Off‐State Heterogeneity in a Photoswitchable Fluorescent Protein Provides Switching Contrast Enhancement**

Abstract Reversibly photoswitchable fluorescent proteins are essential markers for advanced biological imaging, and optimization of their photophysical properties underlies improved performance and novel applications. Here we establish a link between photoswitching contrast, one of the key parameters that dictate the achievable resolution in nanoscopy applications, and chromophore conformation in the non‐fluorescent state of rsEGFP2, a widely employed label in REversible Saturable OpticaL Fluorescence Transitions (RESOLFT) microscopy. Upon illumination, the cis chromophore of rsEGFP2 isomerizes to two distinct off ‐state conformations, trans1 and trans2 , located on either side of the V151 side chain. Reducing or enlarging the side chain at this position (V151A and V151L variants) leads to single off ‐state conformations that exhibit higher and lower switching contrast, respectively, compared to the rsEGFP2 parent. The combination of structural information obtained by serial femtosecond crystallography with high‐level quantum chemical calculations and with spectroscopic and photophysical data determined in vitro suggests that the changes in switching contrast arise from blue‐ and red‐shifts of the absorption bands associated to trans1 and trans2 , respectively. Thus, due to elimination of trans2 , the V151A variants of rsEGFP2 and its superfolding variant rsFolder2 display a more than two‐fold higher switching contrast than their respective parent proteins, both in vitro and in E. coli cells. The application of the rsFolder2‐V151A variant is demonstrated in RESOLFT nanoscopy. Our study rationalizes the connection between structural and photophysical chromophore properties and suggests a means to rationally improve fluorescent proteins for nanoscopy applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Nanoscale Imaging and Control of Volatile and Non-Volatile Resistive Switching in VO 2

Control of the metal-insulator phase transition is vital for emerging neuromorphic and memristive technologies. The ability to alter the electrically driven transition between volatile and non-volatile states is particularly important for quantum-materials-based emulation of neurons and synapses. The major challenge of this implementation is to understand and control the nanoscale mechanisms behind these two fundamental switching modalities. In this study, in situ X-ray nanoimaging is used to follow the evolution of the nanostructure and disorder in the archetypal Mott insulator VO 2 during an electrically driven transition. Our findings demonstrate selective and reversible stabilization of either the insulating or metallic phases achieved by manipulating the defect concentration. This mechanism enables us to alter the local switching response between volatile and persistent regimes and demonstrates a new possibility for nanoscale control of the resistive switching in Mott materials.

36 MATERIALS SCIENCE↗

DOE OSTI2017

Frequency Limitation Due to Switching Transition of the Bias Current in Bidirectional RSFQ Logic

Switching time limitations of the ac bias current of Josephson junctions in bidirectional rapid single flux quantum (RSFQ) logic circuits are investigated in order to determine the limits to the maximum possible operating frequency. We introduce a new approach based on modifying the bias current parameters and determining the inductance values in the circuit for reducing the switching transition time of the bias current through the junctions. We have simulated and optimized the timing and the operation of the bidirectional nondestructive readout and Josephson transmission line cells in this respect to demonstrate the results of utilizing the proposed approach. We successfully reduced the unwanted spike-type signals across the inductances which are made through the transitions during the fast switching times limiting the operation frequency. This is while we have also removed the consequent destructive spikes at the output. We have included the effects of other determining parameters of the circuit in this investigation and found their relatively optimal values to improve the temporal behavior of the bidirectional RSFQ cells. The results of the proposed approach leading to the fastest possible operation of the considered gates obtained in this work are thoroughly reported.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2019

Reconfigurable metamaterial absorber as an optical switch based on organic-graphene control

In this paper, we have suggested an effective optical switch with the cross fractal shape. It contains the main cross element that connected to four parasitic elements by four organic’s material junctions. This absorber is modified as a tunable element by using the graphene layer which can be considered for compensating the physical distortion. Each organic and parasitic load is placed over a graphene layer. These graphene layers separated with a SiO{sub 2} thin film. We have implemented a SiO{sub 2} layer as a spacer between the graphene and metal ground layer. The organic materials are popular for their various resistances value. We have applied a bulky dielectric slab with two different conductivity values for high and low resistance (HRS and LRS). This absorber works at the range of 90–100 THz for mid-infrared spectrum and the bandwidth of 4%. In the HRS mode the reflection value is about − 35 up to − 25 dB. When the organic material switched to LRS mode, this value drastically increased to − 5 dB. The designed absorber has both the tunable and switchable attributes. We have simulated this switch by the finite integral technique method with CST microwave studio.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗