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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Novel duplex vapor electrochemical method for silicon solar cells

Progress in the development of low-cost solar arrays is reported. Topics covered include: (1) development of a simplified feed system for the Na used in the Na-SiF4 reactor; (2) production of high purity silicon through the reduction of sodium fluosilicate with sodium metal; (3) the leaching process for recovering silicon from the reaction products of the SiF4-Na reaction; and (4) silicon separation by the melting of the reaction product.

Kapur, V.↗
NASA NTRS1978

Silicon Sheet Growth Development for the Large Area Sheet Task of the Low Cost Solar Array Project. Heat Exchanger Method - Ingot Casting Fixed Abrasive Method - Multi-Wire Slicing

Solar cells fabricated from HEM cast silicon yielded up to 15% conversion efficiencies. This was achieved in spite of using unpurified graphite parts in the HEM furnace and without optimization of material or cell processing parameters. Molybdenum retainers prevented SiC formation and reduced carbon content by 50%. The oxygen content of vacuum cast HEM silicon is lower than typical Czochralski grown silicon. Impregnation of 45 micrometers diamonds into 7.5 micrometers copper sheath showed distortion of the copper layer. However, 12.5 micrometers and 15 micrometers copper sheath can be impregnated with 45 micrometers diamonds to a high concentration. Electroless nickel plating of wires impregnated only in the cutting edge showed nickel concentration around the diamonds. This has the possibility of reducing kerf. The high speed slicer fabricated can achieve higher speed and longer stroke with vibration isolation.

Schmid, F.↗
NASA NTRS1978

LSSA large area silicon sheet task continuous Czochralski process development

A Czochralski crystal growing furnace was converted to a continuous growth facility by installation of a premelter to provide molten silicon flow into the primary crucible. The basic furnace is operational and several trial crystals were grown in the batch mode. Numerous premelter configurations were tested both in laboratory-scale equipment as well as in the actual furnace. The best arrangement tested to date is a vertical, cylindrical graphite heater containing small fused silicon test tube liner in which the incoming silicon is melted and flows into the primary crucible. Economic modeling of the continuous Czochralski process indicates that for 10 cm diameter crystal, 100 kg furnace runs of four or five crystals each are near-optimal. Costs tend to asymptote at the 100 kg level so little additional cost improvement occurs at larger runs. For these conditions, crystal cost in equivalent wafer area of around $20/sq m exclusive of polysilicon and slicing was obtained.

Rea, S. N.↗
NASA NTRS1978

Synthesis of Silane and Silicon in a Non-equilibrium Plasma Jet

The original objective of this program was to determine the feasibility of high volume, low-cost production of high purity silane or solar cell grade silicon using a non equilibrium plasma jet. The emphasis was changed near the end of the program to determine the feasibility of preparing photovoltaic amorphous silicon films directly using this method. The non equilibrium plasma jet should be further evaluated as a technique for producing high efficiency photovoltaic amorphous silicon films.

Calcote, H. F.↗
NASA NTRS1979

Development of a model and computer code to describe solar grade silicon production processes

Mathematical models, and computer codes based on these models were developed which allow prediction of the product distribution in chemical reactors in which gaseous silicon compounds are converted to condensed phase silicon. The reactors to be modeled are flow reactors in which silane or one of the halogenated silanes is thermally decomposed or reacted with an alkali metal, H2 or H atoms. Because the product of interest is particulate silicon, processes which must be modeled, in addition to mixing and reaction of gas-phase reactants, include the nucleation and growth of condensed Si via coagulation, condensation, and heterogeneous reaction.

Srivastava, R.↗
NASA NTRS1979

Development of a Model and Computer Code to Describe Solar Grade Silicon Production Processes

Mathematical models and computer codes based on these models, which allow prediction of the product distribution in chemical reactors for converting gaseous silicon compounds to condensed-phase silicon were developed. The following tasks were accomplished: (1) formulation of a model for silicon vapor separation/collection from the developing turbulent flow stream within reactors of the Westinghouse (2) modification of an available general parabolic code to achieve solutions to the governing partial differential equations (boundary layer type) which describe migration of the vapor to the reactor walls, (3) a parametric study using the boundary layer code to optimize the performance characteristics of the Westinghouse reactor, (4) calculations relating to the collection efficiency of the new AeroChem reactor, and (5) final testing of the modified LAPP code for use as a method of predicting Si(1) droplet sizes in these reactors.

Srivastava, R.↗
NASA NTRS1979

LSA silicon material task closed-cycle process development

The initial effort on feasibility of the closed cycle process was begun with the design of the two major items of untested equipment, the silicon tetrachloride by product converter and the rotary drum reactor for deposition of silicon from trichlorosilane. The design criteria of the initial laboratory equipment included consideration of the reaction chemistry, thermodynamics, and other technical factors. Design and construction of the laboratory equipment was completed. Preliminary silicon tetrachloride conversion experiments confirmed the expected high yield of trichlorosilane, up to 98 percent of theoretical conversion. A preliminary solar-grade polysilicon cost estimate, including capital costs considered extremely conservative, of $6.91/kg supports the potential of this approach to achieve the cost goal. The closed cycle process appears to have a very likely potential to achieve LSA goals.

Roques, R. A.↗
NASA NTRS1978

Silicon solar cell process development, fabrication and analysis

A program plan, baseline process, measurement program and quality control plan were generated. Cutting operations were completed on the silicon sheet material. The first fabrication run of polycrystalline silicon into solar cells by baseline process was completed. Average conversion efficiency for solar cells fabricated by the baseline process from sheet and measured at air mass zero was 10.4%, compared with the control cells, fabricated from single crystal CZ silicon, whose average conversion efficiency was 12.2%.

Source record↗
NASA NTRS1979

Silicon Solar Cell Process Development, Fabrication and Analysis

The standard solar cells (2x2 cm) from the cast silicon heatexchanger method) showed a maximum AMO efficiency of 10.1%. Cells from low resistivity material (0.5 ohm-cm) showed lower performance than those of the high resistivity cast silicon (3 ohm-cm), an average efficiency 9.5% versus 7.6% Maximum AMO efficiency of the standard solar cells (2x2 cm) from the EFG (RH) ribbons was about 7.5%. The solar cells from controlled SiC, using the displaced die, showed more consistent and better performance than those of the uncontrolled SiC ribbons, an average efficiency of 6.6% versus 5.4% The average AMO efficiency of the standard silicon ceramic (soc) solar calls were about 6%. These were large area solar cells (an average area of 15 sq cm). A maximum efficiency of 7.3% was obtained. The SOC solar cells showed both leakage and series resistance problems, leading to an average curve fill factor of about 60%.

Yoo, H. I.↗
NASA NTRS1979

Development of a Process for a High Capacity Arc Heater Production of Silicon for Solar Arrays

A program was established to develop a high temperature silicon production process using existing electric arc heater technology. Silicon tetrachloride and a reductant (sodium) are injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction is expected to occur and proceed essentially to completion, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection were developed. Included in this report are: test system preparation; testing; injection techniques; kinetics; reaction demonstration; conclusions; and the project status.

Reed, W. H.↗
NASA NTRS1979

Silicon web process development

Silicon dendritic web, a single crystal ribbon shaped during growth by crystallographic forces and surface tension (rather than dies), is a highly promising base material for efficient low cost solar cells. The form of the product smooth, flexible strips 100 to 200 microns thick, conserves expensive silicon and facilitates automation of crystal growth and the subsequent manufacturing of solar cells. These characteristics, coupled with the highest demonstrated ribbon solar cell efficiency-15.5%-make silicon web a leading candidate to achieve, or better, the 1986 Low Cost Solar Array (LSA) Project cost objective of 50 cents per peak watt of photovoltaic output power. The main objective of the Web Program, technology development to significantly increase web output rate, and to show the feasibility for simultaneous melt replenishment and growth, have largely been accomplished. Recently, web output rates of 23.6 sq cm/min, nearly three times the 8 sq cm/min maximum rate of a year ago, were achieved. Webs 4 cm wide or greater were grown on a number of occassions.

Duncan, C. S.↗
NASA NTRS1979

Anisotropic friction, deformation, and fracture of single-crystal silicon carbide at room temperature

Anisotropic friction, deformation, and fracture studies were conducted with /0001/, /10(-1)0/, and /11(-2)0/ silicon carbide surfaces in sliding contact with diamond. The experiments were conducted with loads of 0.1, 0.2, and 0.3 N at a sliding velocity of 3 mm/min in mineral oil or in dry argon at room temperature. The 1010 direction on the basal /0001/ plane exhibits the lowest coefficient of friction and the greatest resistance to abrasion for silicon carbide. Anisotropic friction and deformation of the /0001/, /10(-1)0/, and /11(-2)0/ silicon carbide surfaces are primarily controlled by the slip system /10(-1)0/ 11(-2)0. The anisotropic fracture during sliding on the basal plane is due to surface cracking along /10(-1)0/ and subsurface cracking along /0001/. The fracture during sliding on the /11(-2)0/ or /10(-1)0/ surfaces is due to surface cracking along /0001/ and /11(-2)0/ or /10(-1)-1 and to subsurface cracking along /10(-1)0/.

Miyoshi, K.↗
NASA NTRS1979

Epitaxial silicon growth for solar cells

The epitaxial procedures, solar cell fabrication, and evaluation techniques are described. The development of baseline epitaxial solar cell structures grown on high quality conventional silicon substrates is discussed. Diagnostic layers and solar cells grown on four potentially low cost silicon substrates are considered. The crystallographic properties of such layers and the performance of epitaxially grown solar cells fabricated on these materials are described. An advanced epitaxial reactor, the rotary disc, is described along with the results of growing solar cell structures of the baseline type on low cost substrates. The add on cost for the epitaxial process is assessed and the economic advantages of the epitaxial process as they relate to silicon substrate selection are examined.

Daiello, R. V.↗
NASA NTRS1979

Development of a Model and Computer Code to Describe Solar Grade Silicon Production Processes

The program aims at developing mathematical models and computer codes based on these models, which allow prediction of the product distribution in chemical reactors for converting gaseous silicon compounds to condensed-phase silicon. The major interest is in collecting silicon as a liquid on the reactor walls and other collection surfaces. Two reactor systems are of major interest, a SiCl4/Na reactor in which Si(l) is collected on the flow tube reactor walls and a reactor in which Si(l) droplets formed by the SiCl4/Na reaction are collected by a jet impingement method. During this quarter the following tasks were accomplished: (1) particle deposition routines were added to the boundary layer code; and (2) Si droplet sizes in SiCl4/Na reactors at temperatures below the dew point of Si are being calculated.

Srivastava, R.↗
NASA NTRS1979

Vacuum Die Casting of Silicon Sheet for Photovoltaic Applications

The development of a vacuum die-casting process for producing silicon sheet suitable for photovoltaic cells with a terrestrial efficiency greater than 12 percent and having the potential to be scaled for large quantity production is considered. The initial approach includes: (1) obtaining mechanical design parameters by using boron nitride, which has been shown to non-wetting to silicon; (2) optimizing silicon nitride material composition and coatings by sessile drop experiments; (3) testing effectiveness of fluoride salt interfacial media with a graphite mold; and (4) testing the effect of surface finish using both boron nitride and graphite. When the material and mechanical boundary conditions are established, a finalized version of the prototype assembly will be constructed and the casting variables determined.

Source record↗
NASA NTRS1978

Recent developments in low cost silicon solar cells for terrestrial applications

A variety of techniques may be used for photovoltaic energy systems. Concentrated or not concentrated sunlight may be employed, and a number of materials can be used, including silicon, gallium arsenide, cadmium sulfide, and cadmium telluride. Most of the experience, however, has been obtained with silicon cells employed without sunlight concentration. An industrial base exists at present for producing solar cells at a price in the range from $15 to $30 per peak watt. A major federal program has the objective to reduce the price of power provided by silicon solar systems to approximately $1 per peak watt in the early 1980's and $0.50 per watt by 1986. The approaches considered for achieving this objective are discussed.

Leipold, M. H.↗
NASA NTRS1979

The 8 micron band of silicon monoxide in the expanding cloud around VY Canis Majoris

Observations of vibration-rotation transitions of silicon monoxide in VY CMa show that the lines originate in accelerating, expanding, and cool (about 600 K) layers of a circumstellar cloud at a distance of approximately 0.15 arcsec from the central star. The central stellar velocity, as estimated from observed SiO P Cygni line profiles, is somewhat redshifted from the midpoint of the maser emission features. Most of the silicon is probably in the form of dust grains. The isotopic ratios of silicon are nearly terrestrial.

Geballe, T. R.↗
NASA NTRS1978

Advances in the Dow Corning process for solar-grade silicon

The Dow Corning process consists of the carbothermic reduction of silica to produce silicon that is then purified by unidirectional solidification. The process has produced silicon of semiconductor quality with respect to all elements except boron and phosphorus at about 10 ppma and aluminum at 0.1 ppma. Solar cells produced from this silicon gave AM0 conversion efficiencies of 11%. A process cost analysis is presented.

Hunt, L. P.↗