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All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Sudden impulses in the geomagnetotail and the vicinity

Explorer 33 magnetic field observations were analyzed to study the propagation of sudden impulses (SI) in the geomagnetic tail and the magnetosheath. Average speed of propagation in these regions is 760 km per sec with a range of 550 to 1230 km per sec. Most of the SI's have propagation speed close to that of the shock wave observed in this region. Positive SI is shown to have a positive change in the tail or magnetosheath and a negative SI has a similar negative change. Nine out of thirteen correlated SI's have their origin in the solar wind continuities, while four SI's possibly originate in the perturbations of the tail or magnetosheath field. It was found that the SI propagation is not confined to the tail region but has correlated effects in the magnetosheath. The propagation region studied was in 2000 to 0200 local time sector.

Patel, V. L.↗
NASA NTRS1982

Polycrystalline silicon availability for photovoltaic and semiconductor industries

Markets, applications, and production techniques for Siemens process-produced polycrystalline silicon are surveyed. It is noted that as of 1982 a total of six Si materials suppliers were servicing a worldwide total of over 1000 manufacturers of Si-based devices. Besides solar cells, the Si wafers are employed for thyristors, rectifiers, bipolar power transistors, and discrete components for control systems. An estimated 3890 metric tons of semiconductor-grade polycrystalline Si will be used in 1982, and 6200 metric tons by 1985. Although the amount is expected to nearly triple between 1982-89, research is being carried out on the formation of thin films and ribbons for solar cells, thereby eliminating the waste produced in slicing Czolchralski-grown crystals. The free-world Si production in 1982 is estimated to be 3050 metric tons. Various new technologies for the formation of polycrystalline Si at lower costs and with less waste are considered. New entries into the industrial Si formation field are projected to produce a 2000 metric ton excess by 1988.

Ferber, R. R.↗
NASA NTRS1985

Investigation of superlattice device structures

This report describes the investigation of growth properties, and the structure of epitaxial multilayer Si(Si(1x)Ge(x)) films grown on bulk Silicon Substrates. It also describes the fabrication and characterization of MOSFET and MESFET devices made on these epitaxial films. Films were grown in a CVD reactor using hydrides of Si and Ge with H2 and He as carrier gases. Growth temperatures were between 900 C and 1050 C with most films grown at 1000 C. Layer thickness was between 300A and 2000A and total film thickness was between 0.25 micro m and 7 micro m. The Ge content (X) in the alloy layers was between .05 and 0.2. N-type multilayer films grown on (100) p-type Si showed Hall mobility in the range 1000 to 1500 sq cm/v for an average carrier concentration of approx. 10 to the 16th power/cu cm. This is up to 50% higher than the Hall mobility observed in epitaxial Si films grown under the same conditions and with the same average carrier concentration. The mobility enhancement occurred in films with average carrier concentration (n) from 0.7 x 10 to the 16th power to 2 x 10 to the 17th power/cu cm, and total film thickness greater than 1.0 micro m. No mobility enhancement was seen in n-type multilayer films grown on (111) Si or in p-type multilayer films. The structure of the films was investigated was using SEM, TEM, AES, SIMS, and X-ray double crystal diffraction techniques. The film composition profile (AES, SIMS) showed that the transition region between layers is of the order of about 100A. The TEM examination revealed a well defined layered structure with fairly sharp interfaces and good crystalline quality. It also showed that the first few layers of the film (closest to the substrate) are uneven, most probably due to the initial growth pattern of the epitaxial film where growth occurs first in isolated islands that eventually growth and coalesce. The X-ray diffraction measurement determined the elastic strain and strain relief in the alloy layers of the film and the elastic strain in the intervening Si layers.

Gergis, I. S.↗
NASA NTRS1991

Distribution of silicon between kamacite and taenite

Meteorites formed under highly reducing conditions can incorporate substantial amounts of Si in solid solution in their metallic phases. In enstatite meteorites, reduced Si appears in shreibersite, perryite and, in variable amounts, in the kamacite, taenite, and tetrataenite. Microprobe bulk analysis of Si in Fe,Ni particles of aubrites show a large variation from grain to grain; this large compositional range has been attributed to local equilibrium conditions in the specific T and/or fO2 environments in which they are formed. Si concentrations are homogeneous in the kamacite; in contrast, the Ni-rich phases (taenite and tetrataenite) show a characteristic Si profile. Concentrations of this element in tetrataenite are substantially higher than in the adjacent kamacite, and decrease smoothly towards the center of the taenite grain, matching very closely the M-shaped profile of Ni. Other elements with similar distribution patterns are Ge and Cu. A satisfactory explanation for this behavior cannot be given in the absence of experimental data for the diffusion of Si between alpha and gamma-Fe alloys. However, two end-member possibilities can be envisioned: the distribution of Si between kamacite and taenite may be controlled by (1) the crystallographic structure or (2) the chemical composition of the host phases. These possibilities are explored.

Casanova, Ignacio↗
NASA NTRS1993

Silicon and carbon abundances in the Orion nebula

We assess the gas-phase abundances of Si and C from our recent measurements of Si(2+), C(2+), and C(+) in the Orion Nebula by expanding on our earlier 'blister' models. The C and Si abundances are derived from new IUE high-dispersion spectra of the C(2+) 1907, 1909 A and Si(2+) 1883, 1892 A lines and archival IUE data. Gas-phase Si/C = 0.016 in the Orion ionized volume and is particularly insensitive to uncertainties in extinction and temperature structure. The solar value is 0.098. Gas-phase C/H = 2.8 x 10 exp -4 and Si/H = 4.5 x 10 exp -6. Compared to solar, Si is depleted by a factor of about 8 in the ionized region, while C is much less depleted (factor of 1.3), if depleted at all. This suggests that most Si resides in dust grains even in the ionized volume. Thus, most of the observed forbidden Si II 34.8-micron emission in Orion does not arise in the H II region.

Rubin, Robert H.↗
NASA NTRS1994

Properties of the highly ionized disk and halo gas toward two distant high-latitude stars

Goddard High Resolution Spectrograph (GHRS) intermediate -resolution observations of S III, Si III, Al III, Si IV, C IV, and N V absorption along the sight lines to HD 18100 (l = 217.9 deg, b = -62.7, d = 3.1 kpc, z = -2.8 kpc) and HD 100340 (l = 258.9 deg, b = +61.2 deg, d = 5.3 kpc, z = 4.6 kpc) are presented. These small science aperture spectra have resolutions ranging from 11 to 20 km/s full width at half maximum (FWHM) and S/N from 30 to 65 per diode substep. Strong absorption by moderately and highly ionized gas is seen in each direction. The absorption in the direction of the south Galactic polar region (HD 18100) is kinematically simple, while the absorption in the direction of north Galactic polar region (HD 100304) is kinematically complex. In each case the absorption by the highly ionized gas lies within the velocity range of absorption by neutral and weakly ionized gas. Along each sight line, the velocity dispersion determined from the unsaturated absorption lines increases with the energy required to create each ion. The logarithmic column densities for Al III, Si IV, C IV, and N V are log N(atoms/sq cm = 12.71, 13.10, 13.58, and 12.75 toward HD 18100 and log N = 12.88, 13.31, 13.83, and 13.04 toward HD 100340. Average ionic ratios among these species are very similar along the two sight lines. Differences in profile shape between the absorption for AL II, Si IV, C IV, and N V provide additional support for the claim of Savage, Sembach, & Cardelli (1994) that there exists two types of highly ionized gas in the interstellar medium. One type of highly ionized gas is responsible for the structured Si IV absorption and part of the C IV absorption. In this gas N(C IV)/N(Si IV) approximately 3.0 and N(C IV)/N(N V) greater than 6. The absorption by this gas seems to be associated with some type of self-regulating interface or mixing layer between the warm and hot interstellar medium. The other type of highly ionized gas is responsible for most of the N V absorption, part of the C IV absorption, and has very little associated Si IV absorption. In this gas N(C IV)/N(N V) is approximately 1 to 3. This gas is hot (T greater than 2 x 10(exp 5) K) and may be tracing the cooling gas of supernova (SN) bubbles or a Galactic fountain. The relative mixture of these two types of highly ionized gas varies from one sight line to the next. The two sight lines in this study sample halo gas in the solar neighborhood and have a smaller percentage of the more highly ionized gas than inner Galaxy sight lines.

Savage, Blair D.↗
NASA NTRS1994

Highly ionized gas in the Galactic disk: The l = 295 deg, b,= 0 deg interarm direction

I present new high-resolution measurements of ultraviolet interstellar absorption lines toward three distant stars in the Galactic disk in the general direction l = 295 deg, b = 0 deg. The high ionization lines of Si IV and C IV toward HD 100276, HD 103779, and HD 104705 show substantial variations on angular scales of less than 1 deg, or about 50-100 pc at the distance of the stars. The Si IV and C IV midplane densities derived for HD 100276 and HD 103779 are N(sub o) (Si IV) approximately = 1.3 x 10(exp -9) cm(exp -3) and n(sub o)(C IV) approximately = 4.5 x 10(exp -9) cvm(exp -3), approximately a factor of 2-3 lower than the Galactic averages. Toward HD 104705, the Si IV midplane density is near the average value, but the C IV midplane density is a factor of 3 higher than average. The integrated C IV and Si IV ratios along the HD 100276 and HD 100379 sight lines are similar to the N(C IV)/N(Si IV) = 3.6 +/- 1.3 ratio for a sample of halo stars. For the HD 104705 sight line, N(C IV)/N(Si IV) = 11 and N(C IV)/N(N V) greater than 10. Turbulent mixing layers provide a possible source for the observed absorption along the three sight lines as does gas associated with cooling flows. If mixing layers are the primary source of the absorption along the disk sight lines, then the entrainment velocity of the hot gas is approximately 100 km/s and the post mixed gas temperature is approximately 2 x 10(exp 5) K; same differences may exist for these mixing layers compared to those inferred for gas toward the Galactic poles. Current models of cooling, hot gas in supernova remnants, and magnetized conduction fronts do not accurately describe the high ion properties toward the disk stars in this study.

Sembach, Kenneth R.↗
NASA NTRS1995

The circumstellar nature of the metallic features in a hot DA white dwarf

A new co-added IUE echelle spectrum of the bright DA white dwarf CD -38 deg 10980, together with a newly determined radial velocity for this star, indicate that the sharp lined Si and C absorption features seen in the UV are clearly circumstellar in origin. Absorption in both excited and ground state transitions occurs at a velocity displaced by -12.1 +/- 2.0 km.s with respect to the photospheric velocity. Weak features due to the Si IV doublet are seen at a velocity intermediate between that of the circumstellar features and the photosphere. First time estimates of column densities for excited and ground states of C II, Si II, and Si III are derived. These quantities are used with electron density estimates derived from these species to determine the location and physical conditions of the circumstellar gas in the vicinity of CD -38 deg 10980. If collisional excitation alone is responsible for the excited levels of Si III observed in CD -38 deg 10980, then electron densities in the circumstellar gas must exceed 10(exp 9)/cu cm. Substantially lower electron densities are possible if the circumstellar gas is located near enough to the star so that photoexcitation is the dominant process responsible for the excited lines seen in the UV. Strong limits are placed on the photospheric abundance of Si and C in the star itself. These limits are in sharp contrast to the theoretical predictions of radiative levitation in which Si, but not C, is expected in the photosphere of a white dwarf such as CD -38 deg 10980. The interstellar line of sight to CD -38 deg 10980 is also investigated.

Holberg, J. B.↗
NASA NTRS2001

Thermodynamics of Silicon-Hydroxide Formation in H2O Containing Atmospheres

The formation of volatile silicon-hydroxide species from SiO2 in water containing atmospheres has been identified as a potentially important mode of degradation of Si-based ceramics. Availability of thermodynamic data for these species is a major problem. This study is part of an ongoing effort to obtain reliable, experimentally determined thermodynamic data for these species. The transpiration method was used to measure the pressure of Si-containing vapor in equilibrium with SiO2 (cristobalite) and Ar + H2O(g) with various mole fractions of water vapor, X(sub H2O), at temperatures ranging from 1000 to 1780 K. Enthalpies and entropies for the reaction, SiO2(s) + 2H2O(g) = Si(OH)4(g), were obtained, at X(sub H2O) = 0.15 and 0.37, from the variation of lnK with 1/T according to the 'second law method'. The following data were obtained: delta(H)deg = 52.9 +/- 3.7 kJ/mole and delta(S)deg = -68.6 +/- 2.5 J/mole K at an average temperature of 1550 K, and delta(H)deg = 52.5+/-2.0 kJ/mole and delta(S)deg= -69.7 +/- 1.5 J/moleK at an average temperature of 1384 K, for X(sub H2O)= 0.15 and 0.37, respectively. These data agree with results from the literature obtained at an average temperature of 1600 K, and strongly suggest Si(OH)4(g) is the dominant vapor species. Contradictory results were obtained with the determination of the dependence of Si-containing vapor pressure on the partial pressure of water vapor at 1187 and 1722 K. These results suggested the Si-containing vapor could be a mixture of Si(OH)4 + SiO(OH)2. Further pressure dependent studies are in progress to resolve these issues.

Copland, Evan↗
NASA NTRS1996

Dissolution kinetics of a lunar glass simulant at 25 degrees C: the effect of pH and organic acids

The dissolution kinetics of a simulated lunar glass were examined at pH 3, 5, and 7. Additionally, the pH 7 experiments were conducted in the presence of citric and oxalic acid at concentrations of 2 and 20 mM. The organic acids were buffered at pH 7 to examine the effect of each molecule in their dissociated form. At pH 3, 5, and 7, the dissolution of the synthetic lunar glass was observed to proceed via a two-stage process. The first stage involved the parabolic release of Ca, Mg, Al, and Fe, and the linear release of Si. Dissolution was incongruent, creating a leached layer rich in Si and Ti which was verified by transmission electron microscopy (TEM). During the second stage the release of Ca, Mg, Al, and Fe was linear. A coupled diffusion/surface dissolution model was proposed for dissolution of the simulated lunar glass at pH 3, 5, and 7. During the first stage the initial release of mobile cations (i.e., Ca, Mg, Al, Fe) was limited by diffusion through the surface leached layer of the glass (parabolic release), while Si release was controlled by the hydrolysis of the Si-O-Al bonds at the glass surface (linear release). As dissolution continued, the mobile cations diffused from greater depths within the glass surface. A steady-state was then reached where the diffusion rate across the increased path lengths equalled the Si release rate from the surface. In the presence of the organic acids, the dissolution of the synthetic lunar glass proceeded by a one stage process. The release of Ca, Mg, Al, and Fe followed a parabolic relationship, while the release of Si was linear. The relative reactivity of the organic acids used in the experiments was citrate > oxalate. A thinner leached layer rich in Si/Ti, as compared to the pH experiments, was observed using TEM. Rate data suggest that the chemisorption of the organic anion to the surface silanol groups was responsible for enhanced dissolution in the presence of the organic acids. It is proposed that the increased rate of Si release is responsible for the one stage parabolic release of mobile cations and the relatively thin leached layer compared to experiments at pH 3 and 5.

NASA Discipline Life Support Systems↗
NASA NTRS2004

Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.

Lebron-Velilla, Ramon C.↗
NASA NTRS2008

Polymer Coats Leads on Implantable Medical Device

Langley Research Center s Soluble Imide (LaRC-SI) was discovered by accident. While researching resins and adhesives for advanced composites for high-speed aircraft, Robert Bryant, a Langley engineer, noticed that one of the polymers he was working with did not behave as predicted. After putting the compound through a two-stage controlled chemical reaction, expecting it to precipitate as a powder after the second stage, he was surprised to see that the compound remained soluble. This novel characteristic ended up making this polymer a very significant finding, eventually leading Bryant and his team to win several NASA technology awards, and an "R&D 100" award. The unique feature of this compound is the way that it lends itself to easy processing. Most polyimides (members of a group of remarkably strong and incredibly heat- and chemical-resistant polymers) require complex curing cycles before they are usable. LaRC-SI remains soluble in its final form, so no further chemical processing is required to produce final materials, like thin films and varnishes. Since producing LaRC-SI does not require complex manufacturing techniques, it has been processed into useful forms for a variety of applications, including mechanical parts, magnetic components, ceramics, adhesives, composites, flexible circuits, multilayer printed circuits, and coatings on fiber optics, wires, and metals. Bryant s team was, at the time, heavily involved with the aircraft polymer project and could not afford to further develop the polymer resin. Believing it was worth further exploration, though, he developed a plan for funding development and submitted it to Langley s chief scientist, who endorsed the experimentation. Bryant then left the high-speed civil transport project to develop LaRC-SI. The result is an extremely tough, lightweight thermoplastic that is not only solvent-resistant, but also has the ability to withstand temperature ranges from cryogenic levels to above 200 C. The thermoplastic s unique characteristics lend it to many commercial applications; uses that Bryant believed would ultimately benefit industry and the Nation. "LaRC-SI," he explains, "is a product created in a government laboratory, funded with money from the tax-paying public. What we discovered helps further the economic competitiveness of the United States, and it was our goal to initiate the technology transfer process to ensure that our work benefited the widest range of people." Several NASA centers, including Langley, have explored methods for using LaRC-SI in a number of applications from radiation shielding and as an adhesive to uses involving replacement of conventional rigid circuit boards. In the commercial realm, LaRC-SI can now be found in several commercial products, including the thin-layer composite unimorph ferroelectric driver and sensor (THUNDER) piezoelectric actuator, another "R&D 100" award winner (Spinoff 2005).

Source record↗
NASA NTRS2007

Lightweight, Flexible Solar Cells on Stainless Steel Foil and Polymer for Space and Stratospheric Applications

The availability of low-cost, lightweight and reliable photovoltaic (PV) modules is an important component in reducing the cost of satellites and spacecraft. In addition, future high-power spacecraft will require lightweight PV arrays with reduced stowage volume. In terms of the requirements for low mass, reduced stowage volume, and the harsh space environment, thin film amorphous silicon (a-Si) alloy cells have several advantages over other material technologies (1). The deposition process is relatively simple, inexpensive, and applicable to large area, lightweight, flexible substrates. The temperature coefficient has been found to be between -0.2 and -0.3 %/degC for high-efficiency triple-junction a-Si alloy cells, which is superior for high temperature operation compared to crystalline Si and triple-junction GaAs/InGaP/Ge devices at 0.53 %/degC and 0.45 %/degC, respectively (2). As a result, the reduction in efficiency at high temperature typical in space conditions is less for a-Si alloy cells than for their crystalline counterparts. Additionally, the a-Si alloy cells are relatively insensitive to electron and proton bombardment. We have shown that defects that are created by electrons with energies between 0.2 to 2 MeV with fluence up to 1x10(exp 15) e/sq cm and by protons with energy in the range 0.3 MeV to 5 MeV with fluence up to 1x10(exp 13) p/sq cm can be annealed out at 70 C in less than 50 hours (1). Further, modules incorporating United Solar s a-Si alloy cells have been tested on the MIR space station for 19 months with only minimal degradation (3). For stratospheric applications, such as the high altitude airship, the required PV arrays are typically of considerably higher power than current space arrays. Airships typically have a large area available for the PV, but weight is of critical importance. As a result, low cost and high specific power (W/kg) are key factors for airship PV arrays. Again, thin-film a-Si alloy solar cell technology is well suited to such applications.

Beernink, Kevin↗
NASA NTRS2011

The Biological Effectiveness of Different Radiation Qualities for the Induction of Chromosome Damage in Human Lymphocytes

Chromosome aberrations were measured in human peripheral blood lymphocytes after in vitro exposure to Si-28-ions with energies ranging from 90 to 600 MeV/u, Ti-48-ions with energies ranging from 240 to 1000 MeV/u, or to Fe-56-ions with energies ranging from 200 to 5,000 MeV/u. The LET of the various Si beams in this study ranged from 48 to 158 keV/ m, the LET of the Ti ions ranged from 107 to 240 keV/micron, and the LET of the Fe-ions ranged from 145 to 440 keV/ m. Doses delivered were in the 10- to 200-cGy range. Dose-response curves for chromosome exchanges in cells at first division after exposure, measured using fluorescence in situ hybridization (FISH) with whole-chromosome probes, were fitted with linear or linear-quadratic functions. The relative biological effectiveness (RBE) was estimated from the initial slope of the dose-response curve for chromosome damage with respect to gamma-rays. The estimates of RBEmax values for total chromosome exchanges ranged from 4.4+/-0.4 to 31.5+/-2.6 for Fe ions, 21.4+/-1.7 to 28.3+/-2.4 for Ti ions, and 11.8+/-1.0 to 42.2+/-3.3 for Si ions. The highest RBEmax value for Fe ions was obtained with the 600 MeV/u beam, the highest RBEmax value for Ti ions was obtained 1000 MeV/u beam, and the highest RBEmax value for Si ions was obtained with the 170 MeV/u beam. For Si and Fe ions the RBEmax values increased with LET, reaching a maximum at about 180 keV/micron for Fe and about 100 keV/micron for Si, and decreasing with further increase in LET. Additional studies for low doses Si-28-ions down to 0.02 Gy will be discussed.

Hada, M.↗
NASA NTRS2010

ELDRS Characterization for a Very High Dose Mission

Evaluation of bipolar linear parts which may have Enhanced Low Dose Rate Sensitivity (ELDRS) is problematic for missions that have very high dose radiation requirements. The accepted standards for evaluating parts that display ELDRS require testing at a very low dose rate which could be prohibitively long for very high dose missions. In this work, a methodology for ELDRS characterization of bipolar parts for mission doses up to 1 Mrad(Si) is evaluated. The procedure employs an initial dose rate of 0.01 rad(Si)/s to a total dose of 50 krad(Si) and then changes to 0.04 rad(Si)/s to a total dose of 1 Mrad(Si). This procedure appears to work well. No change in rate of degradation with dose has been observed when the dose rate is changed from 0.01 to 0.04 rad(Si)/s. This is taken as an indication that the degradation due to the higher dose rate is equivalent to that at the lower dose rate at the higher dose levels, at least for the parts studied to date. In several cases, significant parameter degradation or functional failure not observed at HDR was observed at fairly high total doses (50 to 250 krad(Si)) at LDR. This behavior calls into question the use of dose rate trend data and enhancement factors to predict LDR performance.

Radiation Damage↗
NASA NTRS2021

Climate Drivers of Arctic Tundra Variability and Change Using an Indicators Framework

This study applies an indicators framework to investigate climate drivers of tundra vegetation trends and variability over the 1982–2019 period. Previously known indicators relevant for tundra productivity (summer warmth index (SWI), coastal spring sea-ice (SI) area, coastal summer open-water (OW)) and three additional indicators (continentality, summer precipitation, and the Arctic Dipole (AD): second mode of sea level pressure variability) are analyzed with maximum annual Normalized Difference Vegetation Index (MaxNDVI) and the sum of summer bi-weekly (time-integrated) NDVI (TI-NDVI) from the Advanced Very High Resolution Radiometer time-series. Climatological mean, trends, and correlations between variables are presented. Changes in SI continue to drive variations in the other indicators. As spring SI has decreased, summer OW, summer warmth, MaxNDVI, and TI-NDVI have increased. However, the initial very strong upward trends in previous studies for MaxNDVI and TI-NDVI are weakening and becoming spatially and temporally more variable as the ice retreats from the coastal areas. TI-NDVI has declined over the last decade particularly over High Arctic regions and southwest Alaska. The continentality index (CI) (maximum minus minimum monthly temperatures) is decreasing across the tundra, more so over North America than Eurasia. The relationship has weakened between SI and SWI and TI-NDVI, as the maritime influence of OW has increased along with total precipitation. The winter AD is correlated in Eurasia with spring SI, summer OW, MaxNDVI, TI-NDVI, the CI and total summer precipitation. This winter connection to tundra emphasizes the role of SI in driving the summer indicators. The winter (DJF) AD drives SI variations which in turn shape summer OW, the atmospheric SWI and NDVI anomalies. The winter and spring indicators represent potential predictors of tundra vegetation productivity a season or two in advance of the growing season.

Uma S. Bhatt↗
NASA NTRS2023

Can the Streaming Instability Form the First Planetesimals in Globally Turbulent Protoplanetary Disks?

Understanding the formation of the first planetesimals remains key to deciphering the history of planet formation within our own solar system and beyond. Evidence from the vast meteorite record [e.g., 1] as well as observations [e.g., 2] strongly suggest that the first planetesimals, and perhaps giant planet core accretion occurred well within the first million years of disk evolution. Moreover, chemical and lithological mixing as well as observations of line-broadening in protoplanetary disks (PPDs) [e.g., 3-6] suggest that the solar system nebula in this epoch was weakly-to-moderately turbulent in the regions where particle growth is of the greatest interest [7-8]. It is a well-known though that global hydrodynamic turbulence complicates particle growth due to a slew of barriers that can slow or even stall particle or aggregate growth at pebble sizes (with corresponding small particle Stokes numbers St) that can lead to loss to the central star via radial drift before planetesimals can ever form [9,10], requiring that some other mechanism come into play that collects growth-frustrated pebbles into gravitationally bound multi-km bodies – objects that are “born big” [11]. The current leading candidate for such a “leap-frog” mechanism is the so-called Streaming Instability (SI), a gas-drag mediated momentum exchange resonance in which the relative velocity between the particle component and a rotating gaseous fluid can lead to high densities in the particle field [12], which has been invoked in a number of recent PPD models that include a turbulent intensity α [e.g., 13-14] as the defacto mechanism for planetesimal formation if conditions for the SI (depending on particle St and the solids-to-gas mass ratio) are satisfied. However, these previous works use conditions established from occurrence studies for the onset of SI in laminar disks [15-17] in which the only source of turbulence is that self-generated by the settling particle layer, and not externally driven global turbulence. Recent analytical theories of the SI subject to global turbulence predict much more stringent conditions for the effectiveness of the SI than the laminar case [18-19]. Thus, whether the efficient operation of the SI can be attained in realistic models of the solar nebula have yet to be established. In this work, we ask whether the conditions under which the SI can produce gravitationally bound particle overdensities can actually be met in the first million years of evolution in globally turbulent PPDs.

P R Estrada↗
NASA NTRS1972

Sudden impulses in the geomagnetotail and the vicinity.

Explorer 33 magnetic field observations have been analyzed to study the propagation of sudden impulses (si) in the geomagnetic tail and the magnetosheath. Average speed of propagation in these regions is 760 km per sec with a range of 550-1230 km per sec. Most of the si's have a propagation speed which is close to that of the shock wave observed in this region. Positive si is shown to have a positive change in the tail or magnetosheath and a negative si has a similar negative change. Nine out of thirteen correlated si's have their origin in the solar wind continuities, while four si's have possible origin in the perturbations of tail or magnetosheath field.

Patel, V. L.↗